IXYH80N90C3 [IXYS]
XPTTM 900V IGBT;
| 型号： | IXYH80N90C3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | XPTTM 900V IGBT 双极性晶体管 |
| 文件： | 总6页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
XPTTM 900V IGBT
GenX3TM
VCES = 900V
IC110 = 80A
VCE(sat) 2.7V
tfi(typ) = 86ns
IXYT80N90C3
IXYH80N90C3
High-Speed IGBT
for 20-50 kHz Switching
TO-268 (IXYT)
G
E
Symbol
Test Conditions
Maximum Ratings
C (Tab)
VCES
VCGR
TJ = 25°C to 175°C
900
900
V
V
TJ = 25°C to 175°C, RGE = 1M
TO-247 (IXYH)
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
ILRMS
IC110
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
165
160
80
A
A
A
G
C
C (Tab)
ICM
TC = 25°C, 1ms
360
A
E
SSOA
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
ICM = 160
A
G = Gate
E = Emiiter
C
= Collector
(RBSOA)
@VCE VCES
Tab = Collector
PC
TC = 25°C
830
W
TJ
TJM
Tstg
-55 ... +175
175
°C
°C
°C
-55 ... +175
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Md
Mounting Torque (TO-247)
1.13/10
Nm/lb.in.
Weight
TO-268
TO-247
4
6
g
g
International Standard Packages
Advantages
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
950
3.5
Typ.
Max.
High Power Density
Low Gate Drive Requirement
BVCES
VGE(th)
ICES
IC = 250A, VGE = 0V
IC = 250A, VCE = VGE
VCE = VCES, VGE = 0V
V
V
5.5
Applications
25 A
TJ = 150C
TJ = 150C
750 A
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
IGES
VCE = 0V, VGE = 20V
100 nA
VCE(sat)
IC = 60A, VGE = 15V, Note 1
2.3
2.9
2.7
V
V
© 2015 IXYS CORPORATION, All Rights Reserved
DS100446B(12/15)
IXYT80N90C3
IXYH80N90C3
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-268 Outline
Min.
Typ.
Max.
gfs
IC = 60A, VCE = 10V, Note 1
23
38
S
Cies
Coes
Cres
4550
243
77
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
145
42
nC
nC
nC
IC = 80A, VGE = 15V, VCE = 0.5 • VCES
65
Terminals: 1 - Gate
3 - Emitter
2,4 - Collector
td(on)
tri
Eon
td(off)
tfi
34
103
4.3
90
ns
ns
Inductive load, TJ = 25°C
IC = 80A, VGE = 15V
mJ
ns
VCE = 0.5 • VCES, RG = 2
86
ns
Note 2
Eof
1.9
2.7
mJ
f
td(on)
tri
Eon
td(off)
tfi
34
100
5.7
103
98
ns
ns
Inductive load, TJ = 150°C
IC = 80A, VGE = 15V
mJ
ns
VCE = 0.5 • VCES, RG = 2
ns
Note 2
Eoff
2.5
mJ
RthJC
RthCS
0.18 °C/W
°C/W
TO-247
0.21
TO-247 Outline
P
1
2
3
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
e
Terminals: 1 - Gate
2 - Collector
3 - Emitter
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXYT80N90C3
IXYH80N90C3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
160
140
120
100
80
V
= 15V
GE
V
= 15V
300
250
200
150
100
50
14V
GE
14V
13V
12V
13V
11V
10V
12V
60
11V
9V
40
10V
20
8V
7V
9V
7V
0
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
160
140
120
100
80
V
= 15V
GE
V
= 15V
GE
13V
12V
I
= 160A
C
11V
I
= 80A
C
10V
9V
60
40
8V
6V
I = 40A
C
20
0
-50
-25
0
25
50
75
100
125
150
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
200
180
160
140
120
100
80
7
6
5
4
3
2
1
T
= 25ºC
J
I
= 160A
C
T
= 150ºC
25ºC
J
- 40ºC
80A
40A
60
40
20
0
8
9
10
11
12
13
14
15
4
5
6
7
8
9
10
11
12
VGE - Volts
VGE - Volts
© 2015 IXYS CORPORATION, All Rights Reserved
IXYT80N90C3
IXYH80N90C3
Fig. 7. Transconductance
Fig. 8. Gate Charge
80
70
60
50
40
30
20
10
0
16
14
12
10
8
T
J
= - 40ºC
VCE = 450V
IC = 80A
I
G = 10mA
25ºC
150ºC
6
4
2
0
0
20
40
60
80
100
120
140
160
180
200
220
0
20
40
60
80
100
120
140
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
180
160
140
120
100
80
10,000
1,000
100
C
ies
C
oes
60
T
= 150ºC
40
J
C
res
R
= 2
Ω
G
20
dv / dt < 10V / ns
= 1 MHz
5
f
0
10
100
200
300
400
500
600
700
800
900
0
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Forward-Bias Safe Operating Area
Fig. 12. Maximum Transient Thermal Impedance
1000
100
10
1
V
Limit
CE(sat)
0.1
25µs
100µs
1ms
0.01
1
T
= 175ºC
= 25ºC
J
T
C
10ms
DC
Single Pulse
0.1
0.001
0.00001
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Pulse Width - Seconds
IXYT80N90C3
IXYH80N90C3
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
3.4
3.0
2.6
2.2
1.8
1.4
1.0
12
10
8
5
4
3
2
1
0
10
8
E
T
E
on - - - -
E
R
E
on - - - -
off
off
= 150ºC , V = 15V
GE
= 2
V
Ω
= 15V
GE
J
G
V
= 450V
V
= 450V
CE
CE
6
I
= 80A
C
6
T
J
= 150ºC
4
4
T
J
= 25ºC
2
2
I
= 40A
C
0
0
40
50
60
70
80
90
100
2
3
4
5
6
7
8
9
10
11
12
13
14
15
RG - Ohms
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
250
225
200
175
150
125
100
75
360
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
7
6
5
4
3
2
1
0
E
R
E
on - - - -
t f i
t
d(off) - - - -
off
320
280
240
200
160
120
80
= 2
V
Ω
GE = 15V
T
J
= 150ºC, V = 15V
GE
G
VCE = 450V
V
= 450V
CE
IC = 80A
I
= 40A
C
I
= 80A
C
IC = 40A
50
40
2
3
4
5
6
7
8
9
10 11 12 13 14 15
25
50
75
100
125
150
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
200
175
150
125
100
75
180
160
140
120
100
80
225
200
175
150
125
100
75
150
140
130
120
110
100
90
t f i
t
d(off) - - - -
t f i
t
d(off) - - - -
R
G
= 2 , V = 15V
Ω
GE
R
G
= 2 , V = 15V
Ω
GE
V
= 450V
CE
V
= 450V
CE
I
= 40A
C
T = 150ºC
J
T = 25ºC
J
I
= 80A
C
50
80
25
70
50
60
40
50
60
70
80
90
100
25
50
75
100
125
150
IC - Amperes
TJ - Degrees Centigrade
© 2015 IXYS CORPORATION, All Rights Reserved
IXYT80N90C3
IXYH80N90C3
Fig. 19. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
Collector Current
td(on)
- - - -
160
140
120
100
80
40
38
36
34
32
30
28
26
180
160
140
120
100
80
84
76
68
60
52
44
36
28
20
t r i
t r i
t
d(on) - - - -
R
G
= 2 , V = 15V
Ω
GE
T
= 150ºC, V = 15V
GE
J
T
J
= 25ºC, 150ºC
V
= 450V
CE
V
= 450V
CE
I
= 80A
C
I
= 40A
C
60
60
40
40
20
20
40
50
60
70
80
90
100
2
3
4
5
6
7
8
9
10
11 12
13 14
15
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
180
160
140
120
100
80
37
36
35
34
33
32
31
30
29
28
t r i
t
d(on) - - - -
R
G
= 2 , V = 15V
Ω
GE
V
= 450V
CE
I
= 80A
C
60
40
I
= 40A
C
20
0
25
50
75
100
125
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_80N90C3(7D) 02-16-12
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