IXZ318N50 [IXYS]
Z-MOS RF Power MOSFET; Z- MOS RF功率MOSFET型号: | IXZ318N50 |
厂家: | IXYS CORPORATION |
描述: | Z-MOS RF Power MOSFET |
文件: | 总4页 (文件大小:143K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IXZ318N50
ZꢀMOSꢁRFꢁPowerꢁMOSFETꢁ
NꢁChannelꢀEnhancementꢀModeꢀSwitchꢀModeꢀRFꢀMOSFETꢀ
LowꢀCapacitanceꢀZꢁMOSTMꢀMOSFETꢀProcessꢀ
OptimizedꢀforꢀRFꢀOperationꢀ
VDSS
ꢀ
=ꢁ 500ꢁVꢁ
IdealꢀforꢀClassꢀC,ꢀD,ꢀ&ꢀEꢀApplicationsꢀ
ID25ꢀ
=ꢁ
19ꢁAꢁ
RDS(on)ꢀ ≤ꢁ
0.34ꢁꢀꢁ
Symbolꢁ
VDSS
VDGR
VGS
VGSM
ID25
IDM
ARꢀ
TestꢁConditionsꢁ
TJꢀ=ꢀ25°Cꢀtoꢀ150°Cꢀꢀ
TJꢀ=ꢀ25°Cꢀtoꢀ150°C;ꢀRGSꢀ=ꢀ1ꢀMꢀꢀꢀ
Continuousꢀ
MaximumꢁRatingsꢁꢁ
ꢀ
500ꢀꢀ
500ꢀꢀ
Vꢀ
V
PDCꢀ
=ꢁ 880ꢁWꢁ
ꢀ
ꢀ
±20ꢀꢀ
±30ꢀꢀ
19ꢀꢀ
Vꢀ
Vꢀ
Aꢀ
Aꢀ
Aꢀ
Transientꢀ
ꢀ
Tcꢀ=ꢀ25°Cꢀꢀ
ꢀ
Tcꢀ=ꢀ25°C,ꢀpulseꢀwidthꢀlimitedꢀbyꢀTJMꢀꢀ
Tcꢀ=ꢀ25°Cꢀꢀ
ꢀ
95ꢀꢀ
I
19ꢀꢀ
Tcꢀ=ꢀ25°Cꢀꢀ
EAR
ꢁ
ꢀ
TBDꢀꢀ mJꢀ
5ꢀꢀꢀ V/nsꢀ
ISꢀ≤ꢁIDM,ꢀdi/dtꢀ≤ꢁ100A/ꢂs,ꢀVDDꢀ≤ꢀVDSS,ꢀꢀ
Tjꢀ≤ꢀ150°C,ꢀRGꢀ=ꢀ0.2ꢀꢀꢀ
dv/dtꢁꢁ
ISꢀ=ꢀ0ꢀ
>200ꢀꢀ V/nsꢀ
ꢀ
P
DCꢀ
PDHS
DAMBꢀ
RthJC
RthJHS
880ꢀꢀ
440ꢀꢀ
3.0ꢀ
Wꢀ
Wꢀ
Wꢀ
DRAIN
Tcꢀ=ꢀ25°Cꢀ
GATE
ꢀ
Tambꢀ=ꢀ25°Cꢀ
P
ꢀ
ꢀ
ꢀ
0.17ꢀ C/Wꢀ
0.34ꢀꢀ C/Wꢀ
SG1
SG2
SD1
SD2
ꢀ
Featuresꢁ
Symbolꢁ
TestꢁConditions
CharacteristicꢁValuesꢀ
•ꢁ IsolatedꢀSubstrateꢀ
(
TJꢀ=ꢀ25°Cꢀunlessꢀotherwiseꢀspecified)ꢀꢀ
−ꢁ highꢀisolationꢀvoltageꢀ(>2500V)ꢀ
−ꢁ excellentꢀthermalꢀtransferꢀ
ꢀ
ꢀ
min.ꢁ
500ꢀꢀ
typ.ꢁ
max.ꢁ ꢀ
−ꢁ Increasedꢀtemperatureꢀandꢀpowerꢀ
VGSꢀ=ꢀ0ꢀV,ꢀIDꢀ=ꢀ4ꢀmaꢀ
VDSS
VGS(th)
GSSꢀ
IDSS
ꢀ
ꢀ
ꢀ
Vꢀ
Vꢀ
cyclingꢀcapabilityꢀꢀꢀ
VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ250ꢂΑꢀ
ꢀ
3.5ꢀ
4.9ꢀꢀ
6.5ꢀ
•ꢁ IXYSꢀadvancedꢀZꢁMOSꢀprocessꢀ
•ꢁ Lowꢀgateꢀchargeꢀandꢀcapacitancesꢀ
−ꢁ easierꢀtoꢀdriveꢀ
VGSꢀ=ꢀ±20ꢀVDC,ꢀVDSꢀ=ꢀ0ꢀ
I
ꢀ
ꢀ
ꢀ
ꢀ
±100ꢀꢀ
nAꢀ
VDSꢀ=ꢀ0.8VDSSꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀTJꢀ=ꢀ25Cꢀ
VGS=0ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀTJꢀ=125Cꢀ
ꢀ
50ꢀ
1ꢀ
ꢂAꢀ
mAꢀ
−ꢁ fasterꢀswitchingꢀ
•ꢁ LowꢀRDS(on)
ꢀ
•ꢁ Veryꢀlowꢀinsertionꢀinductanceꢀ(<2nH)ꢀ
VGSꢀ=ꢀ20ꢀV,ꢀIDꢀ=ꢀ0.5ID25
Pulseꢀtest,ꢀtꢀ≤ꢀ300ꢂS,ꢀdutyꢀcycleꢀdꢀ≤ꢀ2%ꢀꢀ
ꢀ
RDS(on)
ꢀ
.32ꢀ
.34ꢀ
ꢀꢀ
•ꢁ Noꢀberylliumꢀoxideꢀ(BeO)ꢀorꢀotherꢀ
hazardousꢀmaterialsꢀꢀ
VDSꢀ=ꢀ50ꢀV,ꢀIDꢀ=ꢀ0.5ID25,ꢀpulseꢀtestꢀ
ꢀ
gfsꢀ
TJꢀ
5.0ꢀ
5.4ꢀ
ꢀ
6.0ꢀ
Sꢀ
Advantagesꢁ
ꢀ
ꢁ55ꢀ
+175ꢀꢀ
°Cꢀꢀꢀ
°Cꢀꢀꢀꢀ
°Cꢀꢀꢀꢀꢀ
°Cꢀꢀꢀꢀꢀꢀ
gꢀ
•ꢁ OptimizedꢀforꢀRFꢀandꢀhighꢀspeedꢀ
•ꢁ Easyꢀtoꢀmount—noꢀinsulatorsꢀneededꢀ
•ꢁ Highꢀpowerꢀdensityꢀ
ꢀ
TJMꢀ
ꢀ
ꢀ
175ꢀꢀ
ꢀ
ꢀ
ꢀ
Tstg
ꢀ
ꢁ55ꢀ
+ꢀ175ꢀ
1.6mm(0.063ꢀin)ꢀfromꢀcaseꢀforꢀ10ꢀsꢀ
ꢀ
TLꢀ
ꢀ
ꢀ
300ꢀꢀ
3.5ꢀꢀ
ꢀ
ꢀ
Weightꢀ
IXZ318N50
ZꢀMOSꢁRFꢁPowerꢁMOSFETꢁ
Symbolꢁ
TestꢁConditions
CharacteristicꢁValuesꢀ
(
TJꢀ=ꢀ25°Cꢀunlessꢀotherwiseꢀspecified)ꢀꢀ
ꢀ
ꢀ
ꢀ
ꢀ
min.ꢁ
typ.ꢁ
max.ꢁ
ꢀ
RGꢀ
Cissꢀ
ꢀ
ꢀ
ꢀ
ꢀ
1ꢀ
ꢀ
ꢀꢀ
pFꢀ
pFꢀ
1950ꢀ
175ꢀ
VGSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ0.8ꢀVDSS(max),ꢀꢀ
fꢀ=ꢀ1ꢀMHzꢀ
Coss
Crss
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
17ꢀ
33ꢀꢀ
4ꢀꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
pFꢀ
pFꢀ
nsꢀ
nsꢀ
nsꢀ
nsꢀ
BackꢀꢀMetalꢀtoꢀanyꢀPinꢀ
ꢀ
Cstray
Td(on)
Tonꢀ
ꢀ
ꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
VGSꢀ=ꢀ15ꢀV,ꢀVDSꢀ=ꢀ0.8ꢀVDSSꢀꢀꢀ
IDꢀ=ꢀ0.5ꢀIDMꢀꢀ
RGꢀ=ꢀ1ꢀꢀꢀ(External)ꢀꢀ
4ꢀꢀ
Td(off)
Toffꢀ
ꢀ
5ꢀꢀ
ꢀ
6ꢀꢀ
SourceꢀDrainꢁDiode
CharacteristicꢁValuesꢀ
(
TJꢀ=ꢀ25°Cꢀunlessꢀotherwiseꢀspecified)ꢀꢀ
Symbolꢁ
TestꢁConditionsꢀ
min.ꢁ
typ.ꢁ
max.ꢁ
ꢀ
VGSꢀ=ꢀ0ꢀV
ꢀ
ISꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
19ꢀ
Aꢀ
Aꢀ
Vꢀ
Repetitive;ꢀpulseꢀwidthꢀlimitedꢀbyꢀTJM
ꢀ
ISM
ꢀ
114ꢀ
1.5ꢀ
IFꢀ=ꢀIs,ꢀVGS=0ꢀV,ꢀPulseꢀtest,ꢀtꢀ≤ꢀ300ꢂs,ꢀdutyꢀcycleꢀ
≤2%ꢀ
VSD
ꢀ
ꢀ
Trrꢀ
ꢀ
200ꢀ
ꢀ
nsꢀ
CAUTION:ꢀOperationꢀatꢀorꢀaboveꢀtheꢀMaximumꢀRatingsꢀvaluesꢀmayꢀimpactꢀdeviceꢀreliabilityꢀorꢀcauseꢀpermanentꢀdamageꢀtoꢀtheꢀdevice.ꢀ
ꢀ
Informationꢀinꢀthisꢀdocumentꢀisꢀbelievedꢀtoꢀbeꢀaccurateꢀandꢀreliable. IXYSRFꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀchangesꢀtoꢀinformationꢀpubꢁ
lishedꢀinꢀthisꢀdocumentꢀatꢀanyꢀtimeꢀandꢀwithoutꢀnotice.ꢀ
Forꢀdetailedꢀdeviceꢀmountingꢀandꢀinstallationꢀinstructions,ꢀseeꢀtheꢀ“Device Installation & Mounting Instructions”ꢀtechnicalꢀnoteꢀonꢀtheꢀ
IXYSRFꢀwebꢀsiteꢀat;ꢀꢀ
ꢀ
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdfꢀ
IXYSꢀRFꢀreservesꢀtheꢀrightꢀtoꢀchangeꢀlimits,ꢀtestꢀconditionsꢀandꢀdimensions.ꢀ
IXYSꢀRFꢀꢀMOSFETSꢀareꢀcoveredꢀbyꢀoneꢀorꢀmoreꢀofꢀtheꢀfollowingꢀU.S.ꢀpatents:ꢀ
4,835,592ꢀ
5,034,796ꢀ
5,381,025ꢀ
4,860,072ꢀ
5,049,961ꢀ
5,640,045ꢀ
4,881,106ꢀ
5,063,307ꢀ
ꢀ
4,891,686ꢀ
5,187,117ꢀ
ꢀ
4,931,844ꢀ
5,237,481ꢀ
ꢀ
5,017,508ꢀ
5,486,715ꢀ
ꢀ
IXZ318N50
ZꢀMOSꢁRFꢁPowerꢁMOSFETꢁ
Fig.ꢀ2ꢀ
Fig.ꢀ1ꢀ
TypicalꢁTransferꢁCharacteristics
DSꢁ=ꢁ50V,ꢁP.W.ꢁ=ꢁ20ꢂS
TypicalꢁOutputꢁCharacteristics
V
35
70
8.5Vꢀ
9Vꢀꢁꢀ15Vꢀ
30
25
20
15
10
5
60
50
40
30
20
10
0
8Vꢀ
7.5Vꢀ
7Vꢀ
6.5Vꢀ
0
0
25
50
75
100
125
5
6
7
8
9
10
11
12
13
14
15
VDS,ꢀDrainꢁtoꢁSourceꢀVoltageꢀ(V)
VGS,ꢀGateꢁtoꢀSourceꢀVoltageꢀ(V)
Fig.ꢀ4ꢀ
Fig.ꢀ3ꢀ
GateꢁChargeꢁvs.ꢁGateꢀtoꢀSourceꢁVoltage
VDSꢁ=ꢁ250V,ꢁIDꢁ=ꢁ9.5A,ꢁIGꢁ=ꢁ3mA
ExtendedꢁTypicalꢁOutputꢁCharacteristics
16
100
80
60
40
20
Topꢁꢁꢁꢁꢁꢁꢁꢁꢁ
ꢁ
12Vꢁꢀꢁ15Vꢁ
10Vꢁ
14
12
10
8
ꢁ
9Vꢁ
ꢁ
ꢁ
8.5Vꢁ
8Vꢁ
ꢁ
ꢁ
7.5Vꢁ
7Vꢁ
Bottomꢁ
6.5Vꢁ
6
4
2
0
0
0
0
20
40
60
80
20
40
60
80
100
120
GateꢀChargeꢀ(nC)
VDS,ꢀDrainꢁtoꢁSourceꢀVoltageꢀ(V)
Fig.ꢀ5ꢀ
VDSꢀvs.ꢀCapacitance
10000
1000
100
10
C
issꢀ
Cossꢀ
Crssꢀ
1
0
50
100
150
200
250
300
350
400
VDSꢀVoltageꢀ(V)
IXZ318N50
ZꢀMOSꢁRFꢁPowerꢁMOSFETꢁ
Fig.ꢀ6ꢀPackageꢀDrawingꢀ
Sourceꢀ
Sourceꢀ
Drainꢀ
Gateꢀ
Sourceꢀ
Sourceꢀ
Docꢀ#dsIXZ318N50ꢀREVꢀ07/09ꢀ
©ꢀ2009ꢀIXYSꢀRFꢀꢀ
AnꢀꢀꢀꢀꢀꢀIXYS Companyꢀ
2401ꢀResearchꢀBlvd.,ꢀSuiteꢀ108ꢀ
FortꢀCollins,ꢀCOꢀꢀUSAꢀ80526ꢀ
970ꢁ493ꢁ1901ꢀFax:ꢀ970ꢁ493ꢁ1903ꢀ
Email:ꢀsales@ixyscolorado.comꢀ
Web:ꢀhttp://www.ixyscolorado.com
ꢀ
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