M1583VC440 [IXYS]
Rectifier Diode, 1 Phase, 1 Element, 1583A, 4400V V(RRM), Silicon,;
| 型号： | M1583VC440 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1583A, 4400V V(RRM), Silicon, 快速恢复二极管 |
| 文件： | 总11页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Date:- 2 Nov, 2001
Data Sheet Issue:- 1
WESTCODE
Fast Recovery Diode
Types M1583VC400 to M1583VC450
Absolute Maximum Ratings
MAXIMUM
LIMITS
VOLTAGE RATINGS
UNITS
VRRM
VRSM
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
4000-4500
V
V
4100-4600
MAXIMUM
LIMITS
1583
OTHER RATINGS
UNITS
(note 6)
IF(AV)
IF(AV)
IF(AV)
IF(RMS)
IF(d.c.)
IFSM
IFSM2
I2t
Mean forward current, Tsink=55°C, (note 2)
A
A
Mean forward current. Tsink=100°C, (note 2)
Mean forward current. Tsink=100°C, (note 3)
Nominal RMS forward current, Tsink=25°C, (note 2)
D.C. forward current, Tsink=25°C, (note 4)
1030
624
A
2963
A
2569
A
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
24.8
kA
kA
A2s
A2s
°C
°C
≤
27.3
Peak non-repetitive surge tp=10ms, VRM 10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM 10V, (note 5)
3.08×106
3.73×106
-40 to +150
-40 to +150
I2t
≤
THS
Operating temperature range
Storage temperature range
Tstg
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 150°C Tj initial.
Data Sheet. Types M1583VC400 to M1583VC450 Issue 1
Page 1 of 11
November, 2001
WESTCODE Positive development in power electronics
M1583VC400 to M1583VC450
Characteristics
PARAMETER
MIN.
TYP. MAX. TEST CONDITIONS
UNITS
(Note 1)
VFM
V0
Maximum peak forward voltage
Threshold voltage
-
-
-
2.8
IFM=2000A
V
V
-
1.693
0.525
rS
Slope resistance
-
-
Ω
m
-
-
110 di/dt = 1000A/µs
VFRM
Maximum forward recovery voltage
V
-
-
-
70
di/dt = 1000A/µs, Tj=25°C
IRRM
Qrr
Qra
Irm
Peak reverse current
-
150 Rated VRRM
-
mA
µC
µC
A
Reverse Recovery Charge
Recovered charge, 50% Chord
Reverse Recovery Current
Reverse recovery time, 50% Chord
-
2000
1100
500
5.0
-
-
1500
I
FM=1000A, tp=500µs, di/dt=200A/µs,
Vr=50V, 50% Chord.
-
-
-
trr
-
µs
-
0.016 Double side cooled
Rth(j-hs)
Thermal resistance, junction to heatsink
K/W
-
-
0.032 Single side cooled
F
Mounting force
Weight
27
-
-
34
-
kN
g
Wt
1000
Notes:-
1) Unless otherwise indicated Tj=150°C.
Introduction
The M1583VC400-450 fast recovery diode range has controlled reverse recovery characteristics.
Devices with a suffix code (2 letter or letter/digit/letter combination) added to their generic code are not
necessarily subject to the conditions and limits contained in this report.
Data Sheet. Types M1583VC400 to M1583VC450 Issue 1
Page 2 of 11
November, 2001
WESTCODE Positive development in power electronics
M1583VC400 to M1583VC450
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
VRRM
(V)
VRSM
(V)
VR dc
(V)
40
42
44
45
4000
4200
4400
4500
4100
4300
4500
4600
2000
2040
2080
2100
2.0 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.
3.0 ABCD Constants
These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients of
the expression for the forward characteristic given below:
VF = A + B
I + C I + D I
ln( )
F
F
F
where IF = instantaneous forward current.
4.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.
µ
(ii) Qrr is based on a 150 s integration time.
150µs
Q = i dt
.
rr
rr
∫
I.e.
(iii)
0
t1
K Factor =
t2
Data Sheet. Types M1583VC400 to M1583VC450 Issue 1
Page 3 of 11
November, 2001
WESTCODE Positive development in power electronics
M1583VC400 to M1583VC450
5.0 Reverse Recovery Loss
The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:
TSINK TJ (MAX ) E k f Rth(J Hs)
=
−
[
+
]
−
Where k = 0.2314 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = Rated frequency in Hz at the original sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W)
The total dissipation is now given by:
W(tot) = W(original ) + E f
NOTE 1 - Reverse Recovery Loss by Measurement
This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:
Vr
R2 =
4
di
CS
dt
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R = Snubber resistance
Data Sheet. Types M1583VC400 to M1583VC450 Issue 1
Page 4 of 11
November, 2001
WESTCODE Positive development in power electronics
M1583VC400 to M1583VC450
6.0 Computer Modelling Parameters
6.1 Device Dissipation Calculations
−Vo + Vo + 4 ff 2 rs WAV
2
IAV =
ff 2 rs
2
Ω
Where Vo = 1.693V, rs = 0.525m
ff = form factor (normally unity for fast diode applications)
∆T
WAV =
R
th
∆T = Tj(MAX ) −THs
6.2 Calculation of VF using ABCD Coefficients
The forward characteristic IF Vs VF, on Fig. 1 is represented in two ways;
(i)
the well established V0 and rs tangent used for rating purposes and
(ii)
a set of constants A, B, C, and D forming the coefficients of the representative equation for VF in
terms of IF given below:
VF = A + B
I + C I + D I
ln( )
F
F
F
The constants, derived by curve fitting software, are given in this report for hot characteristics. The
resulting values for VF agree with the true device characteristic over a current range, which is limited to
that plotted.
125°C Coefficients
0.734962026
0.04937503
0.162339×10-3
0.03052379
A
B
C
D
Data Sheet. Types M1583VC400 to M1583VC450 Issue 1
Page 5 of 11
November, 2001
WESTCODE Positive development in power electronics
M1583VC400 to M1583VC450
Curves
Figure 1 – Forward characteristics of Limit device
Figure 2 – Maximum forward recovery voltage
10000
1000
150°C
150°C
25°C
100
1000
10
M1583VC400-450
Issue 1
M1583VC400-450
Issue 1
100
1
0
1
2
3
4
5
6
10
100
1000
10000
Maximum instantaneous forward voltage - VFM (V)
Rate of rise of forward current - di/dt (A/µs)
Figure 3 - Recovered charge, Qrr
Figure 4 - Recovered charge, Qra (50% chord)
10000
10000
M1583VC400-450
M1583VC400-450
Issue 1
Issue 1
2000A
2000A
Tj = 150°C
Tj = 150°C
1500A
1000A
500A
1500A
1000A
500A
1000
1000
100
100
10
100
1000
10000
10
100
1000
10000
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)
Data Sheet. Types M1583VC400 to M1583VC450 Issue 1
Page 6 of 11
November, 2001
WESTCODE Positive development in power electronics
M1583VC400 to M1583VC450
Figure 5 - Maximum reverse current, Irm
Figure 6 - Maximum recovery time, trr (50% chord)
10000
10
2000A
1500A
1000A
500A
2000A
1500A
1000
1000A
500A
Tj = 150°C
Tj = 150°C
M1583VC400-450
Issue 1
M1583VC400-450
Issue 1
100
1
10
100
1000
10000
10
100
1000
10000
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)
Figure 7 – Reverse recovery energy per pulse
Figure 8 - Sine wave energy per pulse
10
1.00E+03
M1583VC400-450
Issue 1
Tj = 150°C
VRM = 67% VRRM
Snubber value
Ω
0.5µF
6.8
4kA
3kA
1.00E+02
1.00E+01
1.00E+00
1.00E-01
2kA
1kA
500A
2000A
1500A
1000A
500A
Tj = 150°C
M1583VC400-450
Issue 1
1
1.00E-05
1.00E-04
1.00E-03
1.00E-02
10
100
1000
10000
Pulse width (s)
Commutation rate - di/dt (A/µs)
Data Sheet. Types M1583VC400 to M1583VC450 Issue 1
Page 7 of 11
November, 2001
WESTCODE Positive development in power electronics
M1583VC400 to M1583VC450
Figure 9 - Sine wave frequency vs. pulse width
Figure 10 - Sine wave frequency vs. pulse width
1.00E+05
1.00E+05
M1583VC400-450
Issue 1
500A
M1583VC400-450
Issue 1
THs = 85°C
THs = 55°C
500A
100% Duty Cycle
100% Duty Cycle
1kA
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+04
1kA
2kA
3kA
2kA
1.00E+03
3kA
4kA
4kA
1.00E+02
1.00E+01
1.00E-05
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 11 - Square wave frequency vs pulse
width
Figure 12 - Square wave frequency vs pulse width
1.00E+05
1.00E+05
M1583VC400-450
Issue 1
M1583VC400-450
Issue 1
di/dt =100A/µs
THs=55°C
di/dt =500A/µs
THs = 55°C
500A
100% Duty Cycle
1kA
100% Duty Cycle
1.00E+04
1.00E+04
1kA
2kA
2kA
3kA
3kA
1.00E+03
4kA
1.00E+03
4kA
1.00E+02
1.00E+02
1.00E+01
1.00E-05
1.00E+01
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Data Sheet. Types M1583VC400 to M1583VC450 Issue 1
Page 8 of 11
November, 2001
WESTCODE Positive development in power electronics
M1583VC400 to M1583VC450
Figure 13 - Square wave frequency vs pulse width
Figure 14 - Square wave frequency vs pulse width
1.00E+05
1.00E+05
M1583VC400-450
M1583VC400-450
Issue 1
Issue 1
di/dt =100A/µs
THs = 85°C
di/dt =500A/µs
THs = 85°C
1kA
500A
1kA
1.00E+04
1.00E+04
100% Duty Cycle
2kA
100% Duty Cycle
2kA
3kA
3kA
1.00E+03
1.00E+03
4kA
4kA
1.00E+02
1.00E+02
1.00E+01
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 15 - Square wave energy per pulse
Figure 16 - Square wave energy per pulse
1.00E+03
1.00E+03
4000A
3000A
2000A
1000A
500A
1.00E+02
1.00E+02
1.00E+01
1.00E+00
1.00E+01
4kA
3kA
2kA
1.00E+00
1kA
Tj = 150°C
di/dt =100A/µs
Tj = 150°C
500A
di/dt =500A/µs
M1583VC400-450
Issue 1
M1583VC400-450
Issue 1
1.00E-01
1.00E-05
1.00E-01
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Data Sheet. Types M1583VC400 to M1583VC450 Issue 1
Page 9 of 11
November, 2001
WESTCODE Positive development in power electronics
M1583VC400 to M1583VC450
Figure 17 – Maximum surge and I2t ratings
100000
1.00E+08
M1583VC400-450
Issue 1
Tj (initial) = 150°C
I2t: VRRM 10V
≤
IFSM: VR=60% VRRM
I2t: VR=60% VRRM
10000
1.00E+07
≤
IFSM: VRRM 10V
1000
1.00E+06
1
3
5
10
1
5
10
50 100
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Figure 18 – Transient thermal impedance
0.1
M1583VC400-450
Issue 1
SSC 0.032K/W
DSC 0.016K/W
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
Time (s)
Data Sheet. Types M1583VC400 to M1583VC450 Issue 1
Page 10 of 11
November, 2001
WESTCODE Positive development in power electronics
M1583VC400 to M1583VC450
Outline Drawing & Ordering Information
ORDERING INFORMATION
(Please quote 10 digit code as below)
M
1583
VC
0
♦ ♦
Fixed
Type Code
Fixed
Type code
Fixed
outline code
Voltage code
40-45
Fixed code
Typical order code: M1583VC420 – 4200V VRRM, 33.1mm clamp height capsule.
UK: Westcode Semiconductors Ltd.
P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL.
Tel: +44 (0) 1249 444524 Fax: +44 (0) 1249 659448
E-Mail: WSL.sales@westcode.com
WESTCODE
USA: Westcode Semiconductors Inc.
3270 Cherry Avenue, Long Beach, California 90807
Tel: +1 (562) 595 6971 Fax: +1 (562) 595 8182
E-Mail: WSI.sales@westcode.com
Internet: http://www.westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
© Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to
the conditions and limits contained in this report.
Data Sheet. Types M1583VC400 to M1583VC450 Issue 1
Page 11 of 11
November, 2001
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