M2698ZY280 [IXYS]
Rectifier Diode, 1 Phase, 1 Element, 2698A, 2800V V(RRM), Silicon,;型号: | M2698ZY280 |
厂家: | IXYS CORPORATION |
描述: | Rectifier Diode, 1 Phase, 1 Element, 2698A, 2800V V(RRM), Silicon, 快速恢复二极管 |
文件: | 总11页 (文件大小:362K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Date:- 12 Jul, 2004
Data Sheet Issue:- 1
WESTCODE
An IXYS Company
Fast Recovery Diode
Type M2698Z#250 to M2698Z#350
Old Type No.: SM25-36CXC964
Absolute Maximum Ratings
MAXIMUM
LIMITS
VOLTAGE RATINGS
UNITS
VRRM
VRSM
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
2500-3500
V
V
2600-3600
MAXIMUM
LIMITS
OTHER RATINGS
UNITS
IF(AV)M
IF(AV)M
IF(AV)M
IF(RMS)
IF(d.c.)
IFSM
Maximum average forward current, Tsink=55°C, (note 2)
Maximum average forward current. Tsink=100°C, (note 2)
Maximum average forward. Tsink=100°C, (note 3)
Nominal RMS forward current, Tsink=25°C, (note 2)
D.C. forward current, Tsink=25°C, (note 4)
2698
A
A
1825
1165
A
4979
A
4545
A
Peak non-repetitive surge tp=10ms, VRM=60% VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=60% VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM≤10V, (note 5)
Operating temperature range
27.8
kA
kA
A2s
A2s
°C
°C
IFSM2
I2t
I2t
30.6
3.86×106
4.68×106
-40 to +150
-40 to +150
Tj op
Tstg
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 150°C Tj initial.
Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1
Page 1 of 11
July, 2004
WESTCODE An IXYS Company
Fast Recovery Diode Types M2698Z#250-350
Characteristics
PARAMETER
MIN.
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
-
-
-
3.0
2.9
IFM=6000A
FM=5400A
VFM
Maximum peak forward voltage
V
-
I
VT0
rT
Threshold voltage
Slope resistance
-
-
1.00
0.33
20
V
mΩ
V
-
-
-
-
-
di/dt = 1000A/µs, Tj=25°C
di/dt = 1000A/µs
VFRM
Maximum forward recovery voltage
-
45
V
IRRM
Qrr
Qra
Irm
Peak reverse current
-
-
150 Rated VRRM
mA
µC
µC
A
Recovered charge
-
1200
620
200
6.2
-
-
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time, 50% Chord
-
800
I
FM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, 50% Chord.
-
-
-
trr
-
µs
-
0.011 Double side cooled
0.022 Single side cooled
47
RthJK
Thermal resistance, junction to heatsink
K/W
kN
-
-
F
Mounting force
Weight
37
-
-
1.7
1.2
-
-
Outline option ZC, ZT and ZY
Outline option ZD and ZV
Wt
kg
-
Notes:-
1) Unless otherwise indicated Tj=150°C.
Notes on rupture rated packages.
This product is available with a non-rupture rated package.
For additional details on these products, please consult factory.
Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1
Page 2 of 11
July, 2004
WESTCODE An IXYS Company
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Fast Recovery Diode Types M2698Z#250-350
Voltage Grade
VRRM
(V)
VRSM
(V)
VR dc
(V)
25
26
28
30
32
34
35
2500
2600
2800
3000
3200
3400
3500
2600
2700
2900
3100
3300
3500
3600
1600
1650
1700
1750
1800
1850
1900
2.0 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.
3.0 ABCD Constants
These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients of
the expression for the forward characteristic given below:
VF = A + B ln(IF ) + C IF + D IF
where IF = instantaneous forward current.
4.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.
(ii) Qrr is based on a 150µs integration time.
150µs
Qrr = irr .dt
I.e.
∫
0
t1
K Factor =
(iii)
t2
Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1
Page 3 of 11
July, 2004
WESTCODE An IXYS Company
Fast Recovery Diode Types M2698Z#250-350
5.0 Reverse Recovery Loss
The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:
TSINK = Tj(MAX ) − E
[
k + f Rth(JK )
]
Where k = 0.2314 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = Rated frequency in Hz at the original sink temperature.
Rth(JK) = d.c. thermal resistance (°C/W)
The total dissipation is now given by:
W(tot) = W(original ) + E f
NOTE 1 - Reverse Recovery Loss by Measurement
This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:
Vr
R2 = 4
di
CS
dt
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R = Snubber resistance
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1
Page 4 of 11
July, 2004
WESTCODE An IXYS Company
7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
Fast Recovery Diode Types M2698Z#250-350
−VT 0 + V + 4 ff 2 r WAV
T 0
T
IAV =
2 ff 2 r
T
Where VT0 = 1.0V, rT = 0.33mΩ
ff = form factor (normally unity for fast diode applications)
∆T
WAV =
R
th
∆T = Tj(MAX ) −TK
7.2 Calculation of VF using ABCD Coefficients
The forward characteristic IF Vs VF, on page 6 is represented in two ways;
(i)
(ii)
the well established VT0 and rT tangent used for rating purposes and
a set of constants A, B, C, and D forming the coefficients of the representative equation for VF in
terms of IF given below:
VF = A + B ln(IF ) + C IF + D IF
The constants, derived by curve fitting software, are given in this report for both hot and cold
characteristics. The resulting values for VF agree with the true device characteristic over a current range,
which is limited to that plotted.
25°C Coefficients
1.081517086
0.113765
8.42315×10-5
4.433191×10-3
150°C Coefficients
0.918605586
0.07445095
A
B
C
D
6.88963×10-5
0.0131724
8.0 Frequency Ratings
The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maximum ratings
shown on page 1.
9.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
10.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1
Page 5 of 11
July, 2004
WESTCODE An IXYS Company
Curves
Fast Recovery Diode Types M2698Z#250-350
Figure 1 – Forward characteristics of Limit device
Figure 2 – Maximum forward recovery voltage
10000
100
M2698Z#250-350
150°C
M2698Z#250-350
Issue 1
Issue 1
25°C
150°C
25°C
1000
10
100
1
0.5
1
1.5
2
2.5
3
3.5
10
100
1000
10000
Maximum instantaneous forward voltage - VFM (V)
Rate of rise of forward current - di/dt (A/µs)
Figure 3 - Recovered charge, Qrr
Figure 4 - Recovered charge, Qra (50% chord)
10000
10000
M2698Z#250-350
M2698Z#250-350
Issue 1
Issue 1
Tj = 150°C
Tj = 150°C
4000A
3000A
2000A
1000A
4000A
3000A
2000A
1000A
1000
1000
100
100
1
10
100
1000
1
10
100
1000
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)
Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1
Page 6 of 11
July, 2004
WESTCODE An IXYS Company
Fast Recovery Diode Types M2698Z#250-350
Figure 5 - Maximum reverse current, Irm
Figure 6 - Maximum recovery time, trr (50% chord)
1000
100
M2698Z#250-350
4000A
3000A
2000A
1000A
M2698Z#250-350
Issue 1
Issue 1
Tj = 150°C
Tj = 150°C
100
10
4000A
3000A
2000A
1000A
10
1
1
10
100
1000
1
10
100
1000
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)
Figure 7 – Reverse recovery energy per pulse
Figure 8 - Sine wave energy per pulse
100
1.00E+03
M2698Z#250-350
M2698Z#250-350
Issue 1
Issue 1
Tj = 150°C
Tj = 150°C
VR = 67%VRRM
Cs = 0.25µF
6000A
4000A
1.00E+02
3000A
2000A
1000A
3000A
1500A
750A
1.00E+01
1.00E+00
1.00E-01
10
375A
1
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1
10
100
1000
Pulse width (s)
Commutation rate - di/dt (A/µs)
Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1
Page 7 of 11
July, 2004
WESTCODE An IXYS Company
Fast Recovery Diode Types M2698Z#250-350
Figure 9 - Sine wave frequency vs. pulse width
Figure 10 - Sine wave frequency vs. pulse width
1.00E+05
1.00E+05
M2698Z#250-350
Issue 1
M2698Z#250-350
Issue 1
TK = 55°C
TK = 85°C
1kA
100% Duty Cycle
1kA
100% Duty Cycle
1.00E+04
1.00E+04
2kA
3kA
2kA
4kA
1.00E+03
1.00E+03
3kA
4kA
6kA
6kA
1.00E+02
1.00E+02
1.00E+01
1.00E+01
1.00E-05
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 11 - Square wave energy per pulse
Figure 12 - Square wave energy per pulse
1.00E+03
1.00E+03
M2698Z#250-350
M2698Z#250-350
Issue 1
di/dt =100A/µs
Tj = 150°C
Issue 1
di/dt =500A/µs
Tj = 150°C
6000A
4000A
3000A
2000A
1000A
1.00E+02
1.00E+02
1.00E+01
1.00E+00
1.00E-01
6kA
1.00E+01
4kA
3kA
2kA
1.00E+00
1kA
1.00E-01
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1
Page 8 of 11
July, 2004
WESTCODE An IXYS Company
Fast Recovery Diode Types M2698Z#250-350
Figure 13 - Square wave frequency vs. pulse width
Figure 14 - Square wave frequency vs. pulse width
1.00E+05
1.00E+05
M2698Z#250-350
M2698Z#250-350
Issue 1
Issue 1
di/dt =100A/µs
di/dt =500A/µs
TK = 55°C
TK=55°C
1kA
100% Duty Cycle
1kA
100% Duty Cycle
1.00E+04
1.00E+04
2kA
3kA
2kA
3kA
4kA
1.00E+03
1.00E+03
4kA
6kA
6kA
1.00E+02
1.00E+02
1.00E+01
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 15 - Square wave frequency vs. pulse width
Figure 16 - Square wave frequency vs. pulse width
1.00E+05
1.00E+05
M2698Z#250-350
M2698Z#250-350
Issue 1
Issue 1
di/dt =100A/µs
TK = 85°C
di/dt =500A/µs
TK = 85°C
1kA
1.00E+04
1.00E+04
1kA
100% Duty Cycle
100% Duty Cycle
2kA
3kA
2kA
3kA
1.00E+03
4kA
1.00E+03
4kA
6kA
6kA
1.00E+02
1.00E+02
1.00E+01
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1
Page 9 of 11
July, 2004
WESTCODE An IXYS Company
Fast Recovery Diode Types M2698Z#250-350
Figure 17 – Maximum surge and I2t ratings
100000
1.00E+08
I2t: VRRM≤10V
I2t: VR=60% VRRM
IFSM: VRRM≤10V
10000
1.00E+07
IFSM: VR=60% VRRM
Tj (initial) = 150°C
M2698Z#250-350
Issue 1
1000
1.00E+06
1
3
5
10
1
5
10
50 100
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Figure 18 – Transient thermal impedance
0.1
M2698Z#250-350
Issue 1
SSC 0.022K/W
DSC 0.011K/W
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
Time (s)
Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1
Page 10 of 11
July, 2004
WESTCODE An IXYS Company
Fast Recovery Diode Types M2698Z#250-350
Outline Drawing & Ordering Information
100A310
Outline options ZC, ZT and ZY
Outline options ZD and ZV
ORDERING INFORMATION
(Please quote 10 digit code as below)
ꢀꢀ
ꢀꢀ
M2698
0
Outline code
Voltage code
VDRM/100
25-35
Fixed
Type Code
ZC = 37.7mm Clamp height, ZT = 37.7mm clamp height, rupture rated capsule,
ZY = 37.7mm Clamp height, extended rupture rated capsule
ZD = 26mm Clamp height, ZV = 26mm clamp height, rupture rated capsule
Fixed code
Typical order code: M2698ZC340 – 3400V VRRM, 37.7mm clamp height capsule.
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: WSL.sales@westcode,com
WESTCODE
An IXYS Company
IXYS Corporation
3540 Bassett Street
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
Westcode Semiconductors Inc
3270 Cherry Avenue
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
E-mail: WSI.sales@westcode.com
www.westcode.com
www.ixys.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with
the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
© Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to
the conditions and limits contained in this report.
Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1
Page 11 of 11
July, 2004
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