MCC200-18IO1 [IXYS]

Silicon Controlled Rectifier, 340A I(T)RMS, 216000mA I(T), 1800V V(DRM), 1800V V(RRM), 2 Element, MODULE-7;


型号：	MCC200-18IO1
厂家：	IXYS CORPORATION
描述：	Silicon Controlled Rectifier, 340A I(T)RMS, 216000mA I(T), 1800V V(DRM), 1800V V(RRM), 2 Element, MODULE-7 局域网栅栅极
文件：	总6页 (文件大小：232K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MCC200-18io1

V_RRM

I_TAV

V_T

2x1800V

216A

Thyristor Module

1.1V

Phase leg

Part number

MCC200-18io1

Backside: isolated

Features / Advantages:

Applications:

Package:

● Thyristor for line frequency

● Planar passivated chip

● Long-term stability

● Line rectifying 50/60 Hz

● Softstart AC motor control

● DC Motor control

● Isolation Voltage:

● Industry standard outline

● RoHS compliant

3600

● Direct Copper Bonded Al2O3-ceramic

● Power converter

● AC power control

● Lighting and temperature control

● Soldering pins for PCB mounting

● Base plate: DCB ceramic

● Reduced weight

● Advanced power cycling

Terms Conditions of usage:

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and

the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The

information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns

the specific application of your product, please contact your local sales office.

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.

Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend

- to perform joint risk and quality assessments;

- the conclusion of quality agreements;

- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20160408b

MCC200-18io1

Ratings

Thyristor

Symbol

V_RSM/DSM

Definition

Conditions

min. typ. max. Unit

T_VJ= 25°C

T_VJ= 125°C

T_VJ= 25°C

1900

1800

400

max. non-repetitive reverse/forward blocking voltage

max. repetitive reverse/forward blocking voltage

V_RRM/DRM

I_R/D

V_R/D=1800 V

I_T= 200 A

I_T= 400 A

I_T= 200 A

I_T= 400 A

T_C= 85°C

180° sine

µA

reverse current, drain current

15 mA

forward voltage drop

1.20

V_T

1.52

1.10

1.50

216

T_VJ

°C

125

average forward current

RMS forward current

T_VJ= 125°C

I_TAV

I_T(RMS)

V_T0

340

0.80

threshold voltage

for power loss calculation only

slope resistance

1.4 mΩ

0.13 K/W

K/W

r_T

R_thJC

R_thCH

P_tot

thermal resistance junction to case

thermal resistance case to heatsink

0.050

T_C= 25°C

T_VJ= 45°C

V_R= 0 V

770

8.00

8.64

6.80

7.35

total power dissipation

max. forward surge current

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

V_R= 400V f = 1 MHz

t_P= 30 µs

I_TSM

T_VJ= 125°C

V_R= 0 V

value for fusing

T_VJ= 45°C

V_R= 0 V

I²t

320.0 kA²s

310.5 kA²s

231.2 kA²s

224.4 kA²s

T_VJ= 125°C

V_R= 0 V

junction capacitance

T_VJ= 25°C

T_C= 125°C

366

C_J

120

P_GM

max. gate power dissipation

t_P= 500 µs

P_GAV

average gate power dissipation

critical rate of rise of current

T_VJ= 125°C; f = 50 Hz

repetitive, I_T= 600 A

100 A/µs

(di/dt)_cr

0.5

t_P= 200 µs;di_G/dt =

A/µs;

I_G= 0.5A; V = ⅔ V_DRM

V = ⅔ V_DRM

non-repet., I_T= 200 A

T_VJ= 125°C

500 A/µs

critical rate of rise of voltage

gate trigger voltage

1000 V/µs

(dv/dt)_cr

V_GT

R_GK= ∞; method 1 (linear voltage rise)

V_D= 6 V

T_VJ= 25°C

T_VJ= -40°C

T_VJ= 25°C

T_VJ= -40°C

T_VJ= 125°C

gate trigger current

V_D= 6 V

150 mA

220 mA

I_GT

gate non-trigger voltage

gate non-trigger current

latching current

V_D= ⅔ V_DRM

t_p= 30 µs

0.25

V_GD

I_GD

I_L

10 mA

T_VJ= 25°C

200 mA

I_G

0.5A; di_G/dt = 0.5 A/µs

holding current

V_D= 6 V R_GK= ∞

T_VJ= 25°C

150 mA

I_H

gate controlled delay time

V_D= ½ V

µs

t_gd

DRM

I_G

V_R= 100 V; I_T= 300 A; V = ⅔ V_DRMT_VJ=100 °C

di/dt = 10 A/µs dv/dt = 50 V/µs µs

0.5A; di_G/dt = 0.5 A/µs

turn-off time

200

µs

t_q

t_p= 200

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20160408b

MCC200-18io1

Ratings

Package Y4

Symbol

I_RMS

Definition

Conditions

min. typ. max. Unit

per terminal

300

125

100

125

°C

RMS current

-40

T_VJ

virtual junction temperature

operation temperature

storage temperature

T_op

T_stg

150

Weight

2.25

4.5

2.75 Nm

M_D

mounting torque

terminal torque

5.5 Nm

terminal to terminal

terminal to backside

14.0 10.0

16.0 16.0

3600

d_Spp/App

d_Spb/Apb

creepage distance on surface | striking distance through air

t = 1 second

isolation voltage

ISOL

50/60 Hz, RMS; I_ISOL≤ 1 mA

t = 1 minute

3000

Circuit

Date Code (DC)

yywwAA

Production

Index (PI)

Part Number

Lot.No: xxxxxx

Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31),

blank (32), serial no.# (33-36)

Ordering

Ordering Number

Marking on Product

MCC200-18io1

Delivery Mode

Quantity Code No.

497479

Standard

MCC200-18io1

Box

T_VJ= 125°C

Equivalent Circuits for Simulation

* on die level

Thyristor

V₀

R₀

threshold voltage

slope resistance *

0.8

0.7

V_{0 max}

R_{0 max}

mΩ

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20160408b

MCC200-18io1

Outlines Y4

MIN

MAX

[mm]

MIN

MAX

2.8/0.8

Dim.

[mm]

[inch]

30.0

30.6

1.181

1.205

typ. 0.25

typ. 0.010

64.0

6.5

65.0

7.0

2.520

0.256

0.193

1.126

0.287

3.681

3.130

0.189

1.315

0.657

0.894

0.551

2.559

0.275

0.201

1.150

0.303

3.720

3.169

0.205

1.339

0.681

0.917

0.591

4.9

5.1

28.6

7.3

29.2

7.7

93.5

79.5

4.8

94.5

80.5

5.2

33.4

16.7

22.7

14.0

34.0

17.3

23.3

15.0

typ. 10.5

typ. 0.413

22.8

1.8

23.3

2.4

0.898

0.071

0.917

0.041

A (3:1)

B-B (1:1)

C-C (1:1)

DCB

6 7

5 4

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20160408b

MCC200-18io1

Thyristor

8000

10⁶

400

300

200

100

50 Hz

180° sin

120°

60°

80% V_RRM

6000

T_VJ

= 45°C

T_VJ= 45°C

30°

_VJ= 125°C

I_TSM

I²dt

10⁵

I_TAVM

[A]

T_VJ= 125°C

4000

[A²s]

[A]

2000

0.001

10⁴

0.01

0.1

25 50 75 100 125 150

T_C[°C]

t [s]

Fig. 1 Surge overload current I_TSM

t [ms]

Fig. 2 I²t versus time (1-10 ms)

Fig. 3 Max. forward current

at case temperature

I_FSM: Crest value, t: duration

400

300

200

100

1: I_GT, T_VJ= 125°C

2: I_GT, T_VJ= 25°C

3: I_GT, T_VJ= -40°C

R_thKAK/W

0.1

0.2

0.3

0.4

0.6

0.8

1.0

P_tot

[W]

V_G

[V]

180° sin

120°

60°

30°

4: P_GM= 20 W

5: P_GM= 60 W

6: P_GM= 120 W

I_GD, T_VJ= 130°C

0.1

10^-310^-210^-110⁰10¹10²

100

125

150

100

200

300

I_TAVM[A]

T_a[°C]

I_G[A]

Fig. 4 Power dissipation vs. on-state current & ambient temperature

(per thyristor or diode)

Fig. 5 Gate trigger characteristics

2000

1600

1200

800

400

100

T_VJ= 25°C

R_thKAK/W

0.02

0.04

0.06

0.10

0.15

0.20

0.30

t_gd

[ s]

P_tot

[W]

limit

typ.

200

400

600

100

125

150

0.01

0.1

I_G[A]

I_dAVM[A]

T_a[°C]

Fig. 7 Gate trigger delay time

Fig. 6 Three phase rectifier bridge: Power dissipation versus direct

output current and ambient temperature

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20160408b

MCC200-18io1

Thyristor

500

400

300

I_T/F

[A]

200

100

0.0

0.4

0.8

1.2

1.6

2.0

V_T/F[V]

Fig. 8 Forward current versus

voltage drop

0.3

0.2

0.1

0.0

Constants for Z_thJCcalculation:

R_thi[K/W]

t_i[s]

0.0100

0.0065

0.0250

0.0615

0.0270

0.00014

0.019

0.180

0.520

1.600

Z_thJC

[K/W]

30°

60°

120°

180°

10^-3

10^-2

10^-1

10⁰

10¹

10²

t [s]

Fig. 9 Transient thermal impedance junction to case at various conduction angles

0.4

0.3

0.2

0.1

0.0

Z_thJK

[K/W]

30°

60°

120°

180°

10^-3

10^-2

10^-1

10⁰

10¹

10²

t [s]

Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode)

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20160408b

MCC200-18IO1 [IXYS]

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