MCC26 [IXYS]
Thyristor Modules Thyristor/Diode Modules; 晶闸管模块可控硅/二极管模块
| 型号： | MCC26 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Thyristor Modules Thyristor/Diode Modules |
| 文件： | 总4页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCC 26
MCD 26
ITRMS = 2x50 A
ITAVM = 2x32 A
VRRM = 800-1600 V
Thyristor Modules
Thyristor/Diode Modules
6
TO-240 AA
3
VRSM
VDSM
VRRM
VDRM
Type
7
4
2
5
1
V
V
Version
1 B
8 B
Version
1 B
8 B
900
1300
1500
1700
800
1200
1400
1600
MCC 26-08 io1 B / io8 B
MCC 26-12 io1 B / io8 B
MCC 26-14 io1 B / io8 B
MCC 26-16 io1 B / io8 B
MCD 26-08 io1 B / io8 B
MCD 26-12 io1 B / io8 B
MCD 26-14 io1 B / io8 B
MCD 26-16 io1 B / io8 B
3
3
6 7 1
5 4 2
MCC
Version 1 B
1
5 4 2
Symbol
Conditions
Maximum Ratings
ITRMS, IFRMS
ITAVM, IFAVM
TVJ = TVJM
TC = 75°C; 180° sine
TC = 85°C; 180° sine
50
32
27
A
A
A
MCD
Version 1 B
ITSM, IFSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
520
560
A
A
3
3
6
1
1
5
5
2
2
MCC
Version 8 B
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
460
500
A
A
A2s
A2s
∫i2dt
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1350
1300
A2s
A2s
MCD
Version 8 B
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1050
1030
(di/dt)cr
TVJ = TVJM
repetitive, IT = 45 A
150
A/µs
f =50 Hz, tP = 200 µs
Features
VD = 2/3 VDRM
• International standard package,
JEDEC TO-240 AA
• Direct copper bonded Al2O3 -ceramic
base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered, E 72873
IG = 0.45 A
diG/dt = 0.45 A/µs
non repetitive, IT = ITAVM
VDR = 2/3 VDRM
500
A/µs
V/µs
(dv/dt)cr
PGM
TVJ = TVJM
;
1000
RGK = ∞; method 1 (linear voltage rise)
TVJ = TVJM
IT = ITAVM
tP = 30 µs
tP = 300 µs
10
5
W
W
• Gate-cathode twin pins for version 1B
PGAV
VRGM
0.5
10
W
V
Applications
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
°C
°C
°C
• DC motor control
• Softstart AC motor controller
• Light, heat and temperature control
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t = 1 s
3000
3600
V~
V~
Advantages
• Space and weight savings
Md
Mounting torque (M5)
Terminal connection torque (M5)
2.5-4.0/22-35 Nm/lb.in.
2.5-4.0/22-35 Nm/lb.in.
• Simple mounting with two screws
• Improvedtemperatureandpowercycling
• Reduced protection circuits
Weight
Typical including screws
90
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
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MCC 26
MCD 26
Symbol
IRRM, IDRM
VT, VF
Conditions
Characteristic Values
10
V
1: IGT, TVJ = 125°C
2: IGT, TVJ 25°C
3: IGT, TVJ = -40°C
TVJ = TVJM; VR = VRRM; VD = VDRM
IT, IF = 80 A; TVJ = 25°C
3
1.64
0.85
mA
V
=
VG
VT0
rT
For power-loss calculations only (TVJ = 125°C)
V
11.0 mΩ
VGT
VD = 6 V;
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
1.5
1.6
100 mA
200 mA
V
V
3
2
6
5
1
IGT
1
4
VGD
IGD
TVJ = TVJM
;
VD = 2/3 VDRM
0.2
10 mA
V
IL
TVJ = 25°C; tP = 10 µs; VD = 6 V
IG = 0.45 A; diG/dt = 0.45 A/µs
450 mA
4: PGAV = 0.5 W
5: PGM
=
5 W
IGD, TVJ = 125°C
IH
TVJ = 25°C; VD = 6 V; RGK = ∞
200 mA
6: PGM = 10 W
0.1
100
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 0.45 A; diG/dt = 0.45 A/µs
2
µs
101
102
103
IG
104
mA
Fig. 1 Gate trigger characteristics
tq
TVJ = TVJM; IT = 20 A, tP = 200 µs; -di/dt = 10 A/µs
VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM
typ. 150
µs
1000
QS
IRM
TVJ = TVJM; IT, IF = 25 A, -di/dt = 0.64 A/µs
50
6
µC
A
TVJ = 25°C
µs
RthJC
per thyristor/diode; DC current
per module
per thyristor/diode; DC current
per module
0.88 K/W
0.44 K/W
1.08 K/W
0.54 K/W
other values
see Fig. 8/9
tgd
RthJK
typ.
Limit
100
dS
dA
a
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
12.7 mm
9.6 mm
50 m/s2
Optional accessories for module-type MCC 26 version 1 B
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode
= red
10
Type ZY 200L (L = Left for pin pair 4/5)
UL 758, style 1385,
Type ZY 200R(R = right for pin pair 6/7) CSA class 5851, guide 460-1-1
1
10
mA
100
1000
IG
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
MCC Version 1 B
MCC Version 8 B
MCD Version 8 B
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
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MCC 26
MCD 26
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
3 - 4
MCC 26
MCD 26
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
RthJC for various conduction angles d:
d
RthJC (K/W)
DC
180°
120°
60°
0.88
0.92
0.95
0.98
1.01
30°
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
0.019
0.029
0.832
0.0031
0.0216
0.191
Fig. 9 Transient thermal impedance
junction toheatsink(perthyristor
or diode)
RthJK for various conduction angles d:
d
RthJK (K/W)
DC
180°
120°
60°
1.08
1.12
1.15
1.18
1.21
30°
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.019
0.029
0.832
0.2
0.0031
0.0216
0.191
0.45
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
4 - 4
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