MCD224-22IO1 [IXYS]
Thyristor Modules Thyristor/Diode Modules; 晶闸管模块可控硅/二极管模块
| 型号： | MCD224-22IO1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Thyristor Modules Thyristor/Diode Modules |
| 文件： | 总4页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCC 224
MCD 224
ITRMS = 2x 400 A
ITAVM = 2x 240 A
VRRM = 2000-2200 V
Thyristor Modules
Thyristor/Diode Modules
3
7
6
5
2
4
VRSM
VDSM
V
VRRM
VDRM
V
Type
1
2100
2300
2000
2200
MCC 224-20io1
MCC 224-22io1
MCD 224-20io1
MCD 224-22io1
3
3
6 7 1
5 4 2
Symbol
Test Conditions
Maximum Ratings
MCC
MCD
400
240
ITRMS
ITAVM
TVJ = TVJM
TC = 85°C; 180° sine
A
A
1
5 4 2
ITSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
8000
8500
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
A
A
7000
7500
òi2dt
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
A2s
A2s
320000
303000
Features
A2s
A2s
245000
240000
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
●
International standard package
Direct Copper Bonded Al2O3-ceramic
with copper base plate
●
(di/dt)cr
TVJ = TVJM
f = 50 Hz, tP = 200 ms
VD = 2/3 VDRM
IG = 1 A
repetitive,
IT = 750 A
100
A/ms
●
●
●
●
Planar passivated chips
Isolation voltage 3600 V~
UL registered E 72873
non repetitive, IT = ITAVM
500
A/ms
V/ms
diG/dt = 1 A/ms
Keyed gate/cathode twin pins
1000
(dv/dt)cr
PGM
TVJ = TVJM; VDR = 2/3 VDRM
RGK = ¥; method 1 (linear voltage rise)
Applications
TVJ = TVJM
IT = ITAVM
tP = 30 ms
tP = 500 ms
W
W
W
120
60
20
●
Motor control, softstarter
Power converter
Heat and temperature control for
PGAV
VRGM
●
10
V
●
-40 ...130
130
-40 ...125
TVJ
TVJM
Tstg
°C
°C
°C
industrial furnaces and chemical
processes
Lighting control
●
●
Solid state switches
3000
3600
VISOL
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA t = 1 s
V~
V~
4.5-7/40-62
11-13/97-115
750
Md
Mounting torque (M6)
Terminal connection torque (M8)
Typical including screws
Nm/lb.in.
Nm/lb.in.
g
Advantages
Weight
●
Simple mounting
●
Improved temperature and power
cycling
Reduced protection circuits
●
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1 - 4
MCC 224
MCD 224
10
V
Symbol
IRRM, IDRM
VT
Test Conditions
Characteristic Values
1: IGT, TVJ = 130 C
2: IGT, TVJ 25 C
TVJ = TVJM; VR = VRRM
mA
V
40
=
3: IGT, TVJ = -40 C
IT
=
600 A; TVJ = 25°C
1.4
VG
0.8
0.76
VT0
rT
For power-loss calculations only (TVJ = TVJM
)
V
mW
3
6
5
2
VGT
IGT
VD = 6 V; TVJ = 25°C
TVJ = -40°C
VD = 6 V; TVJ = 25°C
2
3
150
220
V
V
mA
mA
1
4
1
TVJ = -40°C
VGD
IGD
TVJ = TVJM; VD = 2/3 VDRM
TVJ = TVJM; VD = 2/3 VDRM
V
mA
0.25
10
4: PGM
5: PGM
=
=
20 W
60 W
IL
TVJ = 25°C; VD = 6 V; tP = 30 ms
diG/dt = 0.45 A/ms; IG = 0.45 A
200
mA
IGD, TVJ = 130 C
6: PGM = 120 W
0.1
10-3
150
2
IH
TVJ = 25°C; VD = 6 V; RGK = ¥
mA
10-2
10-1
100
101
102
A
IG
tgd
TVJ = 25°C; VD = 1/2 VDRM
diG/dt = 1 A/ms; IG = 1 A
ms
Fig. 1 Gate trigger characteristics
tq
TVJ = TVJM; VR = 100 V; VD = 2/3 VDRM; tP = 200 ms
dv/dt = 50 V/ms; IT = 300 A; -di/dt = 10 A/ms
typ. 200
ms
100
TVJ = 25 C
QS
IRM
TVJ = TVJM
-di/dt = 50 A/ms; IT = 400 A
760
275
mC
A
µs
tgd
RthJC
RthJK
per thyristor; DC current
per module
per thyristor; DC current
per module
0.139
0.069
0.179
0.089
K/W
K/W
K/W
K/W
typ.
Limit
10
dS
dA
a
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
12.7
9.6
50
mm
mm
m/s2
Optional accessories for modules
Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180 L (L = Left for pin pair 4/5)
Type ZY 180 R (R = Right for pin pair 6/7)
UL 758, style 1385,
CSA class 5851, guide 460-1-1
1
0.01
A
0.1
1
10
IG
Dimensions in mm (1 mm = 0.0394")
Fig. 2 Gate trigger delay time
MCC
MCD
M8x20
M8x20
© 2000 IXYS All rights reserved
2 - 4
MCC 224
MCD 224
8000
106
A2s
400
A
ITSM
I2t
VR = 0V
A
350
300
250
200
150
100
50
50 Hz
ITAVM
DC
80 % VRRM
TVJ = 45°C
TVJ = 130°C
180° sin
120°
60°
6000
30°
TVJ = 45°C
TVJ = 130°C
4000
2000
0
105
104
0
0.001
0.01
0.1
s
1
0
0
1
10
0
25
50
75
100
TC
125 °C150
ms
t
t
Fig. 3 Surge overload current
Fig. 4 I2t versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
ITSM: Crest value, t: duration
500
W
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Ptot
RthKA K/W
0.1
0.2
0.3
0.4
0.6
0.8
1
400
300
200
100
0
DC
180° sin
120°
60°
30°
0
100
200
300
ITAVM
25
50
75
100
°C
TA
150
A
2000
Ptot
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
RthKA K/W
W
0.03
0.05
0.08
0.1
0.15
0.2
1500
0.3
1000
500
0
Circuit
B6
3xMCC224
°C
0
200
400
600
A
25
50
75
100
150
TA
IdAVM
745
© 2000 IXYS All rights reserved
3 - 4
MCC 224
MCD 224
2000
Fig. 7 Three phase AC-controller:
RthKA K/W
W
Power dissipation versus RMS
output current and ambient
temperature
0.03
0.05
0.08
0.1
0.15
0.2
Ptot
1500
1000
500
0
0.3
Circuit
W3
3xMCC224
0
100
200
300
400
500
IRMS
A
0
25
50
75
100
125
TA
150
102
102
°C
0.25
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
K/W
0.20
RthJC for various conduction angles d:
d
RthJC (K/W)
ZthJC
0.15
0.10
0.05
0.00
DC
180°
120°
60°
0.139
0.148
0.156
0.176
0.214
30°
60°
120°
180°
DC
30°
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.0067
0.0358
0.0832
0.0129
0.00054
0.098
0.54
10-3
10-2
10-1
100
101
s
t
12
0.30
Fig. 9 Transient thermal impedance
junction toheatsink(perthyristor
or diode)
K/W
0.25
RthJK for various conduction angles d:
ZthJK
0.20
0.15
0.10
0.05
0.00
d
RthJK (K/W)
DC
180°
120°
60°
0.179
0.188
0.196
0.216
0.256
30°
60°
120°
180°
DC
30°
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
10-3
10-2
10-1
100
101
1
2
3
4
5
0.0067
0.0358
0.0832
0.0129
0.04
0.00054
0.098
0.54
12
s
t
12
745
© 2000 IXYS All rights reserved
4 - 4
相关型号：
MCD250-06IO1
Silicon Controlled Rectifier, 450A I(T)RMS, 287000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element
IXYS
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