MDD312-14N1 [IXYS]
High Power Diode Modules; 大功率二极管模块
| 型号： | MDD312-14N1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Power Diode Modules |
| 文件： | 总3页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDD 312
IFRMS = 2x520 A
IFAVM = 2x310 A
VRRM = 1200-2200 V
High Power
Diode Modules
3
1
2
3
VRSM
VDSM
V
VRRM
VDRM
V
Type
2
1300
1500
1700
1900
2100
2300
1200
1400
1600
1800
2000
2200
MDD 312-12N1
MDD 312-14N1
MDD 312-16N1
MDD 312-18N1
MDD 312-20N1
MDD 312-22N1
1
Symbol
Conditions
Maximum Ratings
IFRMS
IFAVM
TVJ = TVJM
TC = 100°C; 180° sine
520
310
A
A
Features
IFSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
10500
11200
A
A
• International standard package
• Direct copper bonded Al2O3-ceramic
with copper base plate
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
9200
9800
A
A
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered E 72873
∫i2dt
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
551000
527000
A2s
A2s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
423 000
403 000
A2s
A2s
Applications
• Supplies for DC power equipment
• DC supply for PWM inverter
• Field supply for DC motors
• Battery DC power supplies
TVJ
TVJM
Tstg
-40...+150
150
-40...+125
°C
°C
°C
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t = 1 s
3000
3600
V~
V~
Advantages
• Simple mounting
• Improvedtemperatureandpowercycling
• Reduced protection circuits
Md
Mounting torque (M6)
Terminal connection torque (M8)
Typical including screws
4.5-7/40-62 Nm/lb.in.
11-13/97-115 Nm/lb.in.
Weight
750
g
Symbol
IRRM
Conditions
Characteristic Values
Dimensions in mm (1 mm = 0.0394")
TVJ = TVJM; VR = VRRM
IF = 600 A; TVJ = 25°C
30
mA
V
M8x20
VF
1.32
VT0
rT
For power-loss calculations only
TVJ = TVJM
0.8
0.6
V
mΩ
RthJC
per diode; DC current
per module
per diode; DC current
per module
0.12
0.06
0.16
0.08
K/W
K/W
K/W
K/W
RthJK
QS
IRM
TVJ = 125°C; IF = 400 A; -di/dt = 50 A/µs
700
260
µC
A
dS
dA
a
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
12.7
9.6
50
mm
mm
m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1 - 3
MDD 312
10000
106
A2s
550
A
VR = 0 V
IFSM
I2t
DC
500
450
400
350
300
250
200
150
100
50
A
180° sin
120°
60°
IFAVM
50 Hz
8000
80 % VRRM
TVJ
= 45°C
30°
TVJ = 150°C
6000
4000
2000
0
TVJ = 45°C
TVJ = 150°C
105
0
0.001
0.01
0.1
s
1
1
10
0
25
50
75
100 125 150
TC
ms
t
t
Fig. 1 Surge overload current
Fig. 2 I2t versus time (1-10 ms)
Fig. 3 Maximum forward current
at case temperature
IFSM: Crest value, t: duration
600
600
A
Ptot
TVJ = 125°C
RthKA K/W
W
V
R = 600 V
0.06
0.1
0.2
0.3
0.4
0.6
0.8
500
500
IRM
400
300
200
100
0
400
300
200
100
0
DC
I
= 400 A
180° sin
120°
60°
F
30°
0
100
200 300
400
500 A
IFAVM
0
25
50
75
100
TA
150
A/µs
0
50
100
200
diF/dt
Fig. 5 Typ. peak reverse current
Fig. 4 Power dissipation vs. forward current and ambient temperature (per diode)
I
RM versus -diF/dt
1750
Ptot
25
TVJ = 125°C
R = 600 V
W
RthKA K/W
µs
V
1500
0.04
0.06
0.08
0.12
0.2
0.3
0.5
20
R
L
trr
1250
1000
750
500
250
0
15
10
5
I
= 400 A
F
Circuit
B2U
2 x MDD312
0
0
100 200 300 400 500 600
0
25
50
75
100
TA
150
A
A/µs
1
0
50
100
200
IdAVM
diF/dt
Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current
and ambient temperature R = resistive load, L = inductive load
Fig. 7 Typ. recovery time trr
versus -diF/dt
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
2 - 3
MDD 312
3000
W
RthKA K/W
0.03
0.06
0.1
2500
Ptot
0.15
0.2
0.3
2000
1500
1000
500
0
0.4
Circuit
B6U
3 x MDD312
0
200
400
600
800
IdAVM
0
25
50
75
100
125
TA
150
A
Fig. 8 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
0.20
K/W
RthJC for various conduction angles d:
d
RthJC (K/W)
DC
0.120
0.128
0.135
0.153
0.185
0.15
0.10
0.05
0.00
180°C
120°C
60°C
30°C
ZthJC
30°
60°
120°
180°
DC
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.0058
0.031
0.072
0.00054
0.098
0.54
0.0112
12
10-3
10-2
10-1
100
101
102
s
t
Fig. 9 Transient thermal impedance junction to case (per diode)
RthJK for various conduction angles d:
0.25
K/W
0.20
d
RthJK (K/W)
DC
0.160
0.168
0.175
0.193
0.225
180°C
120°C
60°C
30°C
ZthJK
0.15
0.10
0.05
0.00
Constants for ZthJK calculation:
30°
60°
120°
180°
DC
i
Rthi (K/W)
ti (s)
1
2
3
4
5
0.0058
0.031
0.072
0.0112
0.04
0.00054
0.098
0.54
12
12
10-3
10-2
10-1
100
101
102
s
t
Fig. 10Transient thermal impedance junction toheatsink(perdiode)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
3 - 3
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