MDK810-16N1 [IXYS]

Rectifier Diode, 1 Phase, 2 Element, 1342A, 1600V V(RRM), Silicon,;
MDK810-16N1
型号: MDK810-16N1
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Rectifier Diode, 1 Phase, 2 Element, 1342A, 1600V V(RRM), Silicon,

文件: 总9页 (文件大小:332K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Date: 2 May 2008  
IXYS  
Data Sheet Issue: 1  
Dual Diode Modules MD#810-12N1-18N1  
Absolute Maximum Ratings  
VRRM  
VDRM  
[V]  
MDA  
MDK  
MDD  
1200  
1400  
1600  
1800  
810-12N1  
810-14N1  
810-16N1  
810-18N1  
810-12N1  
810-14N1  
810-16N1  
810-18N1  
810-12N1  
810-14N1  
810-16N1  
810-18N1  
MAXIMUM  
VOLTAGE RATINGS  
UNITS  
LIMITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage 1)  
Non-repetitive peak off-state voltage 1)  
Repetitive peak reverse voltage 1)  
Non-repetitive peak reverse voltage 1)  
1200-1800  
1300-1900  
1200-1800  
1300-1900  
V
V
V
V
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IF(AV)M  
IF(AV)M  
Maximum average on-state current, TC = 85°C 2)  
Maximum average on-state current. TC = 100°C 2)  
807  
A
A
664  
IF(RMS)M Nominal RMS on-state current, TC = 55°C 2)  
1661  
A
IF(d.c.)  
IFSM  
IFSM2  
I2t  
D.C. on-state current, TC = 55°C  
1342  
A
3)  
Peak non-repetitive surge tp = 10 ms, VRM = 60%VRRM  
17.3  
kA  
kA  
A2s  
A2s  
V
Peak non-repetitive surge tp = 10 ms, VRM 10V 3)  
19  
I2t capacity for fusing tp = 10 ms, VRM = 60%VRRM  
1.48×106  
1.81×106  
3000  
3)  
I2t  
I2t capacity for fusing tp = 10 ms, VRM 10 V 3)  
Isolation Voltage 4)  
VISOL  
Tvj op  
Tstg  
Operating temperature range  
Storage temperature range  
-40 to +150  
-40 to +150  
°C  
°C  
Notes:  
1) De-rating factor of 0.13% per °C is applicable for Tvj below 25°C.  
2) Single phase; 50 Hz, 180° half-sinewave.  
3) Half-sinewave, 150°C Tvj initial.  
4) AC RMS voltage, 50 Hz, 1min test  
Rating Report. Types MD#810-12N1 to MD#810-18N1 Issue 1  
Page 1 of 9  
May, 2008  
IXYS  
Dual Diode Module Types MD#810-12N1 to MD#810-18N1  
Characteristics  
PARAMETER  
MIN. TYP. MAX. TEST CONDITIONS 1)  
UNITS  
VFM  
VT0  
rT  
Maximum peak on-state voltage  
Threshold voltage  
-
-
1.24 IFM = 2000 A  
V
V
-
-
0.78  
0.23  
Slope resistance  
-
-
mΩ  
mA  
µC  
µC  
A
IRRM  
Qrr  
Qra  
Irm  
Peak reverse current  
-
-
50  
Rated VRRM  
Recovered Charge  
-
1250  
1400  
Recovered Charge, 50% chord  
Reverse recovery current  
Reverse recovery time, 50% chord  
-
1000  
-
-
-
I
TM = 1260 A, tp =1ms, di/dt =10A/µs,  
VR =100 V  
-
115  
trr  
-
16.5  
µs  
-
-
0.062 Single Thyristor  
K/W  
K/W  
K/W  
K/W  
Nm  
Nm  
kg  
RthJC  
Thermal resistance, junction to case  
-
-
0.031 Whole Module  
-
-
-
0.02 Single Thyristor  
RthCH  
Thermal resistance, case to heatsink  
-
-
0.01 Whole Module  
F1  
F2  
Wt  
Mounting force (to heatsink) 2)  
Mounting force (to terminals) 2)  
Weight  
5.1  
10.8  
-
6.9  
13.2  
-
-
1.5  
Notes:  
1) Unless otherwise indicated Tvj=150°C.  
2) Screws must be lubricated.  
Rating Report. Types MD#810-12N1 to MD#810-18N1 Issue 1  
Page 2 of 9  
May, 2008  
IXYS  
Dual Diode Module Types MD#810-12N1 to MD#810-18N1  
Notes on Ratings and Characteristics  
1.0 Voltage Grade Table  
VRRM  
VRSM  
V
VR  
Voltage Grade  
V
DC V  
900  
1200  
1400  
1600  
1800  
1200  
1400  
1600  
1800  
1300  
1500  
1700  
1900  
1050  
1200  
1350  
2.0 Extension of Voltage Grades  
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.  
3.0 De-rating Factor  
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tvj below 25°C.  
4.0 Snubber Components  
When selecting snubber components, care must be taken not to use excessively large values of snubber  
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to  
device damage due to the large resultant values of snubber discharge current. If required, please consult  
the factory for assistance.  
5.0 Computer Modelling Parameters  
5.1 Thyristor Dissipation Calculations  
T  
2
VT 0 + VT 0 + 4ff 2 r WAV  
WAV =  
T
Rth  
T = Tj max TK  
IAV =  
and:  
2ff 2 r  
T
Where VT0 = 0.78 V, rT = 0.23 m.  
Rth = Supplementary thermal impedance, see table below and  
ff = Form factor, see table below.  
Supplementary Thermal Impedance  
Conduction Angle  
Square wave  
Sine wave  
30°  
0.0702  
0.0677  
60°  
0.0685  
0.0673  
90°  
0.0679  
0.0664  
120°  
0.0668  
0.0655  
180°  
0.0658  
0.0650  
270°  
0.0637  
d.c.  
0.0620  
Form Factors  
90°  
Conduction Angle  
Square wave  
Sine wave  
30°  
3.464  
3.98  
60°  
120°  
1.732  
1.879  
180°  
1.414  
1.57  
270°  
1.149  
d.c.  
1
2.449  
2.778  
2
2.22  
Rating Report. Types MD#810-12N1 to MD#810-18N1 Issue 1  
Page 3 of 9  
May, 2008  
IXYS  
Dual Diode Module Types MD#810-12N1 to MD#810-18N1  
5.2 Calculating thyristor VF using ABCD Coefficients  
The on-state characteristic IF vs. VF, on page 6 is represented by a set of constants A, B, C, D, forming  
the coefficients of the representative equation for VF in terms of IF given below:  
VF = A+ B ln  
(
IF + C IF + D IF  
)
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The  
resulting values for VF agree with the true device characteristic over a current range, which is limited to  
that plotted.  
25°C Coefficients  
150°C Coefficients  
A
B
C
D
1.007759  
6.648416e-3  
1.01095e-4  
3.204619e-3  
A
B
C
D
0.4900846  
0.04757313  
2.158905e-4  
-1.076607e-3  
Rating Report. Types MD#810-12N1 to MD#810-18N1 Issue 1  
Page 4 of 9  
May, 2008  
IXYS  
Dual Diode Module Types MD#810-12N1 to MD#810-18N1  
5.3 D.C. Thermal Impedance Calculation  
t  
τ p  
p=n  
r = r 1e  
t
p
p=1  
Where p = 1 to n and:  
n = number of terms in the series  
t = Duration of heating pulse in seconds  
rt = Thermal resistance at time t  
rp = Amplitude of pth term  
= Time Constant of rth term  
τp  
The coefficients for this device are shown in the table below:  
D.C.  
Term  
1
2
3
4
5
1.37×10-3  
7.6×10-4  
4.86×10-3  
8.6×10-3  
0.0114  
0.101  
0.0223  
0.56  
0.0221  
3.12  
rp  
τp  
6.0 Reverse recovery ratings  
(i) Qra is based on 50% IRM chord as shown in Fig. 1  
Fig. 1  
(ii) Qrr is based on a 150 µs integration time i.e.  
150µs  
Qrr = irr .dt  
0
(iii)  
t1  
t2  
K Factor =  
Rating Report. Types MD#810-12N1 to MD#810-18N1 Issue 1  
Page 5 of 9  
May, 2008  
IXYS  
Dual Diode Module Types MD#810-12N1 to MD#810-18N1  
Curves  
Figure 1 – On-state characteristics of Limit device  
10000  
MD#810-12N1-18N1  
Issue 1  
Tj = 25°C  
Tj = 150°C  
1000  
100  
0
0.5  
1
1.5  
2
2.5  
Instantaneous Forward voltage - VFM (V)  
Figure 2 – Maximum surge and I2t Ratings  
Gate may temporarily lose control of conduction angle  
100000  
10000  
1000  
1.00E+07  
MD#810-12N1-18N1  
I2t: VRRM 10V  
Issue 1  
Tj (initial) = 150°C  
I2t: 60% VRRM  
1.00E+06  
ITSM: VRRM 10V  
ITSM: 60% VRRM  
1.00E+05  
1
3
5
10  
1
5
10  
50 100  
Duration of surge (ms)  
Duration of surge (cycles @ 50Hz)  
Rating Report. Types MD#810-12N1 to MD#810-18N1 Issue 1  
Page 6 of 9  
May, 2008  
IXYS  
Dual Diode Module Types MD#810-12N1 to MD#810-18N1  
Figure 3 - Total recovered charge, Qrr  
Figure 4 - Recovered charge, Qra (50% chord)  
10000  
10000  
MD#810-12N1-18N1  
MD#810-12N1-18N1  
Issue 1  
Issue 1  
Tj=150°C  
Tj=150°C  
2520A  
1890A  
1260A  
630A  
2520A  
1890A  
1000  
1260A  
630A  
100  
1000  
1
10  
100  
1000  
1
10  
100  
1000  
di/dt (A/µs)  
di/dt (A/µs)  
Figure 5 - Peak reverse recovery current, Irm  
Figure 6 - Maximum recovery time, trr (50% chord)  
1000  
100  
MD#810-12N1-18N1  
MD#810-12N1-18N1  
2520A  
Issue 1  
Issue 1  
1890A  
1260A  
630A  
Tj=150°C  
Tj=150°C  
100  
10  
2520A  
1890A  
1260A  
630A  
10  
1
1
10  
100  
1000  
1
10  
100  
1000  
di/dt (A/µs)  
di/dt (A/µs)  
Rating Report. Types MD#810-12N1 to MD#810-18N1 Issue 1  
Page 7 of 9  
May, 2008  
IXYS  
Dual Diode Module Types MD#810-12N1 to MD#810-18N1  
Figure 8 – On-state current vs. Heatsink  
temperature  
Figure 7 – On-state current vs. Power dissipation  
2500  
160  
MD#810-12N1-18N1  
MD#810-12N1-18N1  
Issue 1  
Issue 1  
140  
d.c.  
2000  
½ wave  
3ø  
6ø  
120  
100  
80  
1500  
1000  
500  
0
60  
40  
20  
6ø  
3ø  
½ wave  
1500  
d.c.  
0
0
500  
1000  
1500  
2000  
0
500  
1000  
2000  
Mean Forward Current (A) (Whole cycle averaged)  
Mean forward current (A) (Whole cycle averaged)  
Figure 9 – Transient thermal impedance  
0.1  
Single Thyristor  
MD#810-12N1-18N1  
Issue 1  
0.01  
0.001  
0.0001  
0.00001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
Time (s)  
Rating Report. Types MD#810-12N1 to MD#810-18N1 Issue 1  
Page 8 of 9  
May, 2008  
IXYS  
Dual Diode Module Types MD#810-12N1 to MD#810-18N1  
Outline Drawing & Ordering Information  
3
1
2
MDD  
3
1
2
MDA  
MDK  
3
1
2
150A118  
ORDERING INFORMATION  
(Please quote 11 digit code as below)  
ꢀꢀ  
M
D#  
810  
N
1
Voltage code  
VRRM/100  
12-18  
Fixed  
Configuration code  
DD, DA, DK  
Fixed  
Fixed  
Standard Diode  
Type Code  
Type Code  
Version Code  
Typical order code: MDA810-16N1– MDA configuration, 1600V VRRM  
IXYS Semiconductor GmbH  
Edisonstraße 15  
Westcode Semiconductors Ltd  
Langley Park Way, Langley Park,  
Chippenham, Wiltshire, SN15 1GE.  
Tel: +44 (0)1249 444524  
D-68623 Lampertheim  
Tel: +49 6206 503-0  
IXYS  
Fax: +49 6206 503-627  
E-mail: marcom@ixys.de  
Fax: +44 (0)1249 659448  
E-mail: WSL.sales@westcode.com  
www.ixys.com  
IXYS Corporation  
IXYS Long Beach  
3270 Cherry Avenue  
1590 Buckeye Drive  
Milpitas, CA 95035-7418 USA  
Tel: +1 (408) 457 9000  
Fax: +1 (408) 496-0670  
E-mail: sales@ixys.net  
Long Beach CA 90807 USA  
Tel: +1 (562) 595 6971  
Fax: +1 (562) 595 8182  
WESTCODE  
E-mail: WSI.sales@westcode.com  
An IXYS Company  
www.westcode.com  
© IXYS Semiconductor GmbH.  
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed  
except with the written permission of and in the manner permitted by the proprietors IXYS Semiconductors GmbH.  
In the interest of product improvement, IXYS reserves the right to change specifications at any time without prior notice.  
Rating Report. Types MD#810-12N1 to MD#810-18N1 Issue 1  
Page 9 of 9  
May, 2008  

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