MDK810-16N1 [IXYS]
Rectifier Diode, 1 Phase, 2 Element, 1342A, 1600V V(RRM), Silicon,;
| 型号： | MDK810-16N1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 1342A, 1600V V(RRM), Silicon, |
| 文件： | 总9页 (文件大小：332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Date: 2 May 2008
IXYS
Data Sheet Issue: 1
Dual Diode Modules MD#810-12N1-18N1
Absolute Maximum Ratings
VRRM
VDRM
[V]
MDA
MDK
MDD
1200
1400
1600
1800
810-12N1
810-14N1
810-16N1
810-18N1
810-12N1
810-14N1
810-16N1
810-18N1
810-12N1
810-14N1
810-16N1
810-18N1
MAXIMUM
VOLTAGE RATINGS
UNITS
LIMITS
VDRM
VDSM
VRRM
VRSM
Repetitive peak off-state voltage 1)
Non-repetitive peak off-state voltage 1)
Repetitive peak reverse voltage 1)
Non-repetitive peak reverse voltage 1)
1200-1800
1300-1900
1200-1800
1300-1900
V
V
V
V
MAXIMUM
LIMITS
OTHER RATINGS
UNITS
IF(AV)M
IF(AV)M
Maximum average on-state current, TC = 85°C 2)
Maximum average on-state current. TC = 100°C 2)
807
A
A
664
IF(RMS)M Nominal RMS on-state current, TC = 55°C 2)
1661
A
IF(d.c.)
IFSM
IFSM2
I2t
D.C. on-state current, TC = 55°C
1342
A
3)
Peak non-repetitive surge tp = 10 ms, VRM = 60%VRRM
17.3
kA
kA
A2s
A2s
V
Peak non-repetitive surge tp = 10 ms, VRM ≤ 10V 3)
19
I2t capacity for fusing tp = 10 ms, VRM = 60%VRRM
1.48×106
1.81×106
3000
3)
I2t
I2t capacity for fusing tp = 10 ms, VRM ≤ 10 V 3)
Isolation Voltage 4)
VISOL
Tvj op
Tstg
Operating temperature range
Storage temperature range
-40 to +150
-40 to +150
°C
°C
Notes:
1) De-rating factor of 0.13% per °C is applicable for Tvj below 25°C.
2) Single phase; 50 Hz, 180° half-sinewave.
3) Half-sinewave, 150°C Tvj initial.
4) AC RMS voltage, 50 Hz, 1min test
Rating Report. Types MD#810-12N1 to MD#810-18N1 Issue 1
Page 1 of 9
May, 2008
IXYS
Dual Diode Module Types MD#810-12N1 to MD#810-18N1
Characteristics
PARAMETER
MIN. TYP. MAX. TEST CONDITIONS 1)
UNITS
VFM
VT0
rT
Maximum peak on-state voltage
Threshold voltage
-
-
1.24 IFM = 2000 A
V
V
-
-
0.78
0.23
Slope resistance
-
-
mΩ
mA
µC
µC
A
IRRM
Qrr
Qra
Irm
Peak reverse current
-
-
50
Rated VRRM
Recovered Charge
-
1250
1400
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
-
1000
-
-
-
I
TM = 1260 A, tp =1ms, di/dt =10A/µs,
VR =100 V
-
115
trr
-
16.5
µs
-
-
0.062 Single Thyristor
K/W
K/W
K/W
K/W
Nm
Nm
kg
RthJC
Thermal resistance, junction to case
-
-
0.031 Whole Module
-
-
-
0.02 Single Thyristor
RthCH
Thermal resistance, case to heatsink
-
-
0.01 Whole Module
F1
F2
Wt
Mounting force (to heatsink) 2)
Mounting force (to terminals) 2)
Weight
5.1
10.8
-
6.9
13.2
-
-
1.5
Notes:
1) Unless otherwise indicated Tvj=150°C.
2) Screws must be lubricated.
Rating Report. Types MD#810-12N1 to MD#810-18N1 Issue 1
Page 2 of 9
May, 2008
IXYS
Dual Diode Module Types MD#810-12N1 to MD#810-18N1
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
VRRM
VRSM
V
VR
Voltage Grade
V
DC V
900
1200
1400
1600
1800
1200
1400
1600
1800
1300
1500
1700
1900
1050
1200
1350
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tvj below 25°C.
4.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
5.0 Computer Modelling Parameters
5.1 Thyristor Dissipation Calculations
∆T
2
−VT 0 + VT 0 + 4⋅ ff 2 ⋅r ⋅WAV
WAV =
T
Rth
∆T = Tj max −TK
IAV =
and:
2⋅ ff 2 ⋅r
T
Where VT0 = 0.78 V, rT = 0.23 mΩ.
Rth = Supplementary thermal impedance, see table below and
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave
Sine wave
30°
0.0702
0.0677
60°
0.0685
0.0673
90°
0.0679
0.0664
120°
0.0668
0.0655
180°
0.0658
0.0650
270°
0.0637
d.c.
0.0620
Form Factors
90°
Conduction Angle
Square wave
Sine wave
30°
3.464
3.98
60°
120°
1.732
1.879
180°
1.414
1.57
270°
1.149
d.c.
1
2.449
2.778
2
2.22
Rating Report. Types MD#810-12N1 to MD#810-18N1 Issue 1
Page 3 of 9
May, 2008
IXYS
Dual Diode Module Types MD#810-12N1 to MD#810-18N1
5.2 Calculating thyristor VF using ABCD Coefficients
The on-state characteristic IF vs. VF, on page 6 is represented by a set of constants A, B, C, D, forming
the coefficients of the representative equation for VF in terms of IF given below:
VF = A+ B ⋅ln
(
IF + C ⋅ IF + D ⋅ IF
)
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for VF agree with the true device characteristic over a current range, which is limited to
that plotted.
25°C Coefficients
150°C Coefficients
A
B
C
D
1.007759
6.648416e-3
1.01095e-4
3.204619e-3
A
B
C
D
0.4900846
0.04757313
2.158905e-4
-1.076607e-3
Rating Report. Types MD#810-12N1 to MD#810-18N1 Issue 1
Page 4 of 9
May, 2008
IXYS
Dual Diode Module Types MD#810-12N1 to MD#810-18N1
5.3 D.C. Thermal Impedance Calculation
−t
τ p
p=n
r = r ⋅ 1− e
∑
t
p
p=1
Where p = 1 to n and:
n = number of terms in the series
t = Duration of heating pulse in seconds
rt = Thermal resistance at time t
rp = Amplitude of pth term
= Time Constant of rth term
τp
The coefficients for this device are shown in the table below:
D.C.
Term
1
2
3
4
5
1.37×10-3
7.6×10-4
4.86×10-3
8.6×10-3
0.0114
0.101
0.0223
0.56
0.0221
3.12
rp
τp
6.0 Reverse recovery ratings
(i) Qra is based on 50% IRM chord as shown in Fig. 1
Fig. 1
(ii) Qrr is based on a 150 µs integration time i.e.
150µs
Qrr = irr .dt
∫
0
(iii)
t1
t2
K Factor =
Rating Report. Types MD#810-12N1 to MD#810-18N1 Issue 1
Page 5 of 9
May, 2008
IXYS
Dual Diode Module Types MD#810-12N1 to MD#810-18N1
Curves
Figure 1 – On-state characteristics of Limit device
10000
MD#810-12N1-18N1
Issue 1
Tj = 25°C
Tj = 150°C
1000
100
0
0.5
1
1.5
2
2.5
Instantaneous Forward voltage - VFM (V)
Figure 2 – Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
100000
10000
1000
1.00E+07
MD#810-12N1-18N1
I2t: VRRM ≤10V
Issue 1
Tj (initial) = 150°C
I2t: 60% VRRM
1.00E+06
ITSM: VRRM ≤10V
ITSM: 60% VRRM
1.00E+05
1
3
5
10
1
5
10
50 100
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Rating Report. Types MD#810-12N1 to MD#810-18N1 Issue 1
Page 6 of 9
May, 2008
IXYS
Dual Diode Module Types MD#810-12N1 to MD#810-18N1
Figure 3 - Total recovered charge, Qrr
Figure 4 - Recovered charge, Qra (50% chord)
10000
10000
MD#810-12N1-18N1
MD#810-12N1-18N1
Issue 1
Issue 1
Tj=150°C
Tj=150°C
2520A
1890A
1260A
630A
2520A
1890A
1000
1260A
630A
100
1000
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 5 - Peak reverse recovery current, Irm
Figure 6 - Maximum recovery time, trr (50% chord)
1000
100
MD#810-12N1-18N1
MD#810-12N1-18N1
2520A
Issue 1
Issue 1
1890A
1260A
630A
Tj=150°C
Tj=150°C
100
10
2520A
1890A
1260A
630A
10
1
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Rating Report. Types MD#810-12N1 to MD#810-18N1 Issue 1
Page 7 of 9
May, 2008
IXYS
Dual Diode Module Types MD#810-12N1 to MD#810-18N1
Figure 8 – On-state current vs. Heatsink
temperature
Figure 7 – On-state current vs. Power dissipation
2500
160
MD#810-12N1-18N1
MD#810-12N1-18N1
Issue 1
Issue 1
140
d.c.
2000
½ wave
3ø
6ø
120
100
80
1500
1000
500
0
60
40
20
6ø
3ø
½ wave
1500
d.c.
0
0
500
1000
1500
2000
0
500
1000
2000
Mean Forward Current (A) (Whole cycle averaged)
Mean forward current (A) (Whole cycle averaged)
Figure 9 – Transient thermal impedance
0.1
Single Thyristor
MD#810-12N1-18N1
Issue 1
0.01
0.001
0.0001
0.00001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Time (s)
Rating Report. Types MD#810-12N1 to MD#810-18N1 Issue 1
Page 8 of 9
May, 2008
IXYS
Dual Diode Module Types MD#810-12N1 to MD#810-18N1
Outline Drawing & Ordering Information
3
1
2
MDD
3
1
2
MDA
MDK
3
1
2
150A118
ORDERING INFORMATION
(Please quote 11 digit code as below)
ꢀꢀ
M
D#
810
N
1
Voltage code
VRRM/100
12-18
Fixed
Configuration code
DD, DA, DK
Fixed
Fixed
Standard Diode
Type Code
Type Code
Version Code
Typical order code: MDA810-16N1– MDA configuration, 1600V VRRM
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Westcode Semiconductors Ltd
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Tel: +44 (0)1249 444524
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Tel: +49 6206 503-0
IXYS
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
Fax: +44 (0)1249 659448
E-mail: WSL.sales@westcode.com
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Tel: +1 (408) 457 9000
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E-mail: sales@ixys.net
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Fax: +1 (562) 595 8182
WESTCODE
E-mail: WSI.sales@westcode.com
An IXYS Company
www.westcode.com
© IXYS Semiconductor GmbH.
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors IXYS Semiconductors GmbH.
In the interest of product improvement, IXYS reserves the right to change specifications at any time without prior notice.
Rating Report. Types MD#810-12N1 to MD#810-18N1 Issue 1
Page 9 of 9
May, 2008
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