MDMA65P1200TG [IXYS]
Standard Rectifier Module;
| 型号： | MDMA65P1200TG |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Standard Rectifier Module |
| 文件： | 总5页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDMA65P1200TG
=
VRRM
IFAV
VF
2x1200V
65A
Standard Rectifier Module
=
=
1.11V
Phase leg
Part number
MDMA65P1200TG
Backside: isolated
2
1
3
TO-240AA
Features / Advantages:
Applications:
Package:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Diode for main rectification
● For single and three phase
bridge configurations
● Isolation Voltage:
● Industry standard outline
● RoHS compliant
V~
4800
● Very low forward voltage drop
● Very low leakage current
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
● Height: 30 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222c
© 2016 IXYS all rights reserved
MDMA65P1200TG
Ratings
Rectifier
Symbol
VRSM
Definition
Conditions
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
1300
1200
50
V
V
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
VRRM
IR
reverse current
VR =1200 V
µA
mA
V
VR =1200 V
IF = 65 A
IF = 130 A
IF = 65 A
IF = 130 A
TC = 100°C
rectangular
2
forward voltage drop
1.18
1.40
1.11
1.39
65
VF
V
TVJ
=
°C
V
125
V
average forward current
threshold voltage
TVJ = 150°C
TVJ = 150°C
A
IFAV
d = 0.5
0.81
V
VF0
for power loss calculation only
slope resistance
4.3 mΩ
0.5 K/W
K/W
rF
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
Ptot
0.20
TC = 25°C
TVJ = 45°C
VR = 0 V
250
1.10
1.19
935
W
kA
kA
A
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V; f = 1 MHz
IFSM
TVJ = 150°C
VR = 0 V
1.01
kA
value for fusing
TVJ = 45°C
VR = 0 V
I²t
6.05 kA²s
5.89 kA²s
4.37 kA²s
4.25 kA²s
pF
TVJ = 150°C
VR = 0 V
TVJ = 25°C
37
CJ
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222c
© 2016 IXYS all rights reserved
MDMA65P1200TG
Ratings
Package TO-240AA
Symbol
IRMS
Definition
Conditions
min. typ. max. Unit
per terminal
200
150
125
125
A
°C
°C
°C
g
RMS current
-40
-40
-40
TVJ
virtual junction temperature
Top
operation temperature
storage temperature
Tstg
76
Weight
2.5
2.5
9.7
4
4
Nm
Nm
mm
mm
V
MD
mounting torque
terminal torque
M
T
terminal to terminal
terminal to backside
13.0
dSpp/App
dSpb/Apb
creepage distance on surface | striking distance through air
16.0 16.0
4800
t = 1 second
V
isolation voltage
ISOL
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
4000
V
Part description
M = Module
Date Code +
Assembly Line
D = Diode
Circuit
M = Standard Rectifier
A = (up to 1800V)
65 = Current Rating [A]
P = Phase leg
yywwAA
Part Number
Lot.No: xxxxxx
Data Matrix
1200 = Reverse Voltage [V]
TG = TO-240AA
Ordering
Ordering Number
MDMA65P1200TG
Marking on Product
MDMA65P1200TG
Delivery Mode
Quantity Code No.
36 515912
Standard
Box
TVJ = 150°C
Equivalent Circuits for Simulation
* on die level
Rectifier
V0
I
R0
threshold voltage
slope resistance *
0.81
3.1
V
V0 max
R0 max
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222c
© 2016 IXYS all rights reserved
MDMA65P1200TG
Outlines TO-240AA
2
1
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222c
© 2016 IXYS all rights reserved
MDMA65P1200TG
Rectifier
104
200
1000
800
VR = 0 V
50 Hz, 80%VRRM
160
TVJ = 45°C
120
IFSM
I2t
[A2s]
IF
TVJ = 45°C
[A]
[A]
80
600
TVJ = 150°C
TVJ = 150°C
TVJ
= 25°C
40
0
TVJ = 125°C
TVJ = 150°C
103
400
0.5
1.0
1.5
2.0
0.001
0.01
0.1
1
1
2
3
4 5 6 7 8 10
VF [V]
t [s]
t [ms]
Fig. 3 I2t versus time per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 1 Forward current versus
voltage drop per diode
150
120
90
100
80
DC =
1
RthHA =
DC =
1
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
0.5
0.5
0.4
0.4
0.33
0.17
0.08
60
0.33
0.17
0.08
IF(AV)M
Ptot
[A]
60
30
0
40
20
0
[W]
0
50
100
150
0
15
30
45
60
75
0
50
100
Tamb [°C]
150
TC [°C]
IF(AV)M [A]
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
0.6
0.5
0.4
Constants for ZthJC calculation:
ZthJC
0.3
[K/W]
i
Rthi (K/W)
ti (s)
1
2
3
4
0.022
0.068
0.245
0.165
0.001
0.010
0.060
0.270
0.2
0.1
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222c
© 2016 IXYS all rights reserved
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