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MEA95-06DA [IXYS]

Fast Recovery Epitaxial Diode (FRED) Module; 快速恢复外延二极管（ FRED ）模块
MEA95-06DA
型号： MEA95-06DA
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Fast Recovery Epitaxial Diode (FRED) Module
快速恢复外延二极管（ FRED ）模块

二极管
文件： 总2页 (文件大小：57K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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MEA 95-06 DA VRRM = 600 V  
MEK 95-06 DA IFAV = 95 A  
Fast Recovery  
Epitaxial Diode  
(FRED) Module  
MEE 95-06 DA trr  
= 250 ns  
3
TO-240 AA  
VRSM  
V
VRRM  
V
Type  
2
MEA95-06 DA  
MEK 95-06 DA  
MEE 95-06 DA  
1
2
3
1
2
3
1
2
3
600  
600  
Symbol  
IFRMS  
Test Conditions  
Maximum Ratings  
Tcase  
Tcase  
=
=
°C  
A
A
A
75  
142  
95  
TBD  
IFAV  
IFRM  
●
°C; rectangular, d = 0.5  
75  
Features  
tP < 10 ms; rep. rating, pulse width limited by TVJM  
●
International standard package  
with DCB ceramic base plate  
Planar passivated chips  
Short recovery time  
1200  
1300  
IFSM  
TVJ = 45°C; t = 10 ms (50 Hz), sine  
A
A
t = 8.3 ms (60 Hz), sine  
●
●
●
●
●
●
T
VJ = 150°C; t = 10 ms (50 Hz), sine  
1080  
1170  
A
A
t = 8.3 ms (60 Hz), sine  
Low switching losses  
I2t  
TVJ = 45°C; t = 10 ms (50 Hz), sine  
7200  
7100  
A2s  
A2s  
Soft recovery behaviour  
Isolation voltage 3600 V~  
UL registered E 72873  
t = 8.3 ms (60 Hz), sine  
TVJ = 150°C; t = 10 ms (50 Hz), sine  
5800  
5700  
A2s  
A2s  
t = 8.3 ms (60 Hz), sine  
Applications  
Antiparallel diode for high frequency  
TVJ  
Tstg  
THmax  
-40...+150  
-40...+125  
110  
°C  
°C  
°C  
●
switching devices  
Free wheeling diode in converters  
●
Ptot  
Tcase = 25°C  
280  
W
and motor control circuits  
Inductive heating and melting  
Uninterruptible power supplies (UPS)  
Ultrasonic cleaners and welders  
VISOL  
50/60 Hz, RMS t = 1 min  
IISOL £ 1 mA  
3000  
3600  
V~  
V~  
●
t = 1 s  
●
Md  
Mounting torque (M5)  
Terminal connection torque (M5)  
2.5-4/22-35 Nm/lb.in.  
2.5-4/22-35 Nm/lb.in.  
●
Advantages  
dS  
dA  
a
Creep distance on surface  
Strike distance through air  
Maximum allowable acceleration  
12.7  
9.6  
50  
mm  
mm  
m/s2  
●
High reliability circuit operation  
●
Low voltage peaks for reduced  
protection circuits  
Low noise switching  
Low losses  
90  
Weight  
g
●
●
Symbol  
Test Conditions  
Characteristic Values (per diode)  
typ. max.  
IR  
TVJ = 25°C  
TVJ = 25°C  
TVJ =125°C VR = 0.8 • VRRM  
VR = VRRM  
VR = 0.8 • VRRM  
2
0.5  
34  
mA  
mA  
mA  
Dimensions in mm (1 mm = 0.0394")  
VF  
IF  
=
A; TVJ = 125°C  
TVJ = 25°C  
A; TVJ = 125°C  
TVJ = 25°C  
V
V
V
V
100  
1.36  
1.55  
2.05  
2.09  
IF  
=
300  
VT0  
rT  
For power-loss calculations only  
TVJ = 125°C  
1.01  
2.85  
V
mW  
RthJH  
RthJC  
DC current  
DC current  
0.550  
0.450  
K/W  
K/W  
trr  
IRM  
IF  
VR  
= 100 A  
= 300 V  
TVJ = 100°C  
TVJ 25°C  
TVJ = 100°C  
250  
300  
14  
21  
ns  
A
A
=
-di/dt = 200 A/ms  
● IFAV rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5  
Data according to IEC 60747  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2000 IXYS All rights reserved  
1 - 2  
MEA 95-06 DA MEE 95-06 DA  
MEK 95-06 DA  
200  
A
175  
4
µC  
3
60  
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
VR = 300V  
A
50  
IRM  
Qr  
150  
125  
100  
75  
IF  
IF=190A  
IF= 95A  
IF=47.5A  
40  
30  
20  
10  
0
TVJ=150°C  
TVJ=100°C  
TVJ=25°C  
IF=190A  
IF= 95A  
IF=47.5A  
2
1
0
50  
25  
0
0.0  
V
A/ s  
-diF/dt  
0.5  
1.0  
1.5  
VF  
2.0  
10  
100  
1000  
0
200 400 600 1000  
A/ s  
-diF/dt  
Fig. 1 Forward current IF versus  
voltage drop VF per leg  
Fig. 2 Reverse recovery charge Qr  
versus -diF/dt  
Fig. 3 Peak reverse current IRM  
versus -diF/dt  
2.0  
250  
50  
1.0  
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
IF = 150A  
A
ns  
µs  
VFR  
40  
0.8  
0.6  
0.4  
0.2  
0.
VFR  
trr  
1.5  
200  
tfr  
tfr  
Qr  
IF=190A  
IF= 95A  
IF=47.5A  
Kf  
30  
20  
10  
0
IRM  
1.0  
0.5  
0.0  
150  
100  
50  
0
50  
100  
TVJ  
150  
0
200 400 600 1000  
0
200 400 600 800 1A/s  
°C  
A/ s  
-diF/dt  
diF/dt  
Fig. 4 Dynamic parameters Qr, IRM  
versus junction temperature TVJ  
Fig. 5 Recovery time trr versus -diF/dt  
Fig. 6 Peak forward voltage VFR and tfr  
versus diF/dt  
0.6  
K/W  
0.5  
0.4  
ZthJH  
Constants for ZthJH calculation:  
0.3  
0.2  
0.1  
0.0  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
0.037  
0.138  
0.093  
0.282  
0.002  
0.134  
0.25  
0.274  
0.001  
0.01  
0.1  
1
10  
s
t
Fig. 7 Transient thermal impedance junction to heatsink  
© 2000 IXYS All rights reserved  
2 - 2  

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