MEO500-06DA [IXYS]
Fast Recovery Epitaxial Diode (FRED) Module; 快速恢复外延二极管（ FRED ）模块
| 型号： | MEO500-06DA |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Fast Recovery Epitaxial Diode (FRED) Module |
| 文件： | 总2页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MEO 500-06 DA VRRM = 600 V
IFAVM = 514 A
Fast Recovery
Epitaxial Diode
(FRED) Module
trr
= 250 ns
Preliminary data
3
3
1
1
VRSM
V
VRRM
V
Type
600
600
MEO 500-06DA
Symbol
IFRMS
Test Conditions
Maximum Ratings
Features
TC = 75°C
726
514
2680
A
A
A
●
International standard package
with DCB ceramic base plate
Planar passivated chips
Short recovery time
IFAVM
IFRM
●
TC = 75°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
●
●
●
●
●
●
IFSM
TVJ = 45°C; t = 10 ms (50 Hz), sine
4800
5280
A
A
t = 8.3 ms (60 Hz), sine
Low switching losses
4320
4750
TVJ = 150°C; t = 10 ms (50 Hz), sine
A
A
Soft recovery behaviour
Isolation voltage 3600 V~
UL registered E 72873
t = 8.3 ms (60 Hz), sine
I2t
TVJ = 45°C; t = 10 ms (50 Hz), sine
A2s
A2s
115200
117100
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
93300
94800
A2s
A2s
Applications
Antiparallel diode for high frequency
t = 8.3 ms (60 Hz), sine
●
switching devices
Free wheeling diode in converters
and motor control circuits
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
-40...+150
-40...+125
110
TVJ
Tstg
TSmax
°C
°C
°C
●
●
Ptot
TC = 25°C
1750
W
●
VISOL
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA
V~
V~
3000
3600
●
t = 1 s
Md
Mounting torque (M6)
Terminal connection torque (M6)
2.25-2.75/20-25 Nm/lb.in.
4.50-5.50/40-48 Nm/lb.in.
Advantages
●
High reliability circuit operation
Low voltage peaks for reduced
●
dS
dA
a
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
12.7
9.6
50
mm
mm
m/s2
protection circuits
Low noise switching
Low losses
●
●
Weight
g
150
Symbol
Test Conditions
Characteristic Values (per diode)
typ. max.
Dimensions in mm (1 mm = 0.0394")
IR
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C VR = 0.8 • VRRM
VR = VRRM
VR = 0.8 • VRRM
mA
mA
mA
24
6
160
300
1.17
1.36
1.41
1.52
VF
IF =
A; TVJ = 125°C
TVJ = 25°C
A; TVJ = 125°C
TVJ = 25°C
V
V
V
V
520
IF =
VT0
rT
For power-loss calculations only
0.85
1.09
V
mW
RthJH
RthJC
DC current
DC current
0.114
0.071
K/W
K/W
trr
IRM
IF = 600 A
VR= 300 V
-di/dt = 800 A/ms
TVJ = 100°C
TVJ 25°C
TVJ = 100°C
250
300
88
132
ns
A
A
=
● IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1 - 2
MEO 500-06 DA
800
A
20
µC
15
200
A
TVJ= 100°C
TVJ= 100°C
VR = 300V
V = 300V
R
IRM
Qr
600
150
100
50
IF
IF=1200A
IF= 600A
IF= 300A
IF=1200A
IF= 600A
IF= 300A
TVJ=125°C
TVJ=25°C
400
200
0
10
5
0
0
A/ s
-diF/dt
0.0
0.4
0.8
1.2
1.6
2.0
100
1000
0
200 400 600 1000
A/ s
-diF/dt
V
VF
Fig. 1 Forward current IF versus
Fig. 2 Typ. reverse recovery
charge Qr versus -diF/dt
Fig. 3 Typ. peak reverse current IRM
versus -diF/dt
max. voltage drop VF per leg
1.4
1.2
1.0
0.8
0.6
0.4
450
60
V
3.0
TVJ= 100°C
VR = 300V
TVJ= 100°C
IF = 600A
µs
ns
tfr
50
VFR
2.5
400
tfr
Kf
trr
40
30
20
10
0
2.0
1.5
1.0
0.5
0.
350
300
250
200
VFR
IF=1200A
IF= 600A
IF= 300A
IRM
Qr
A/ s
0
40
80
120
160
0
200 400 600 1000
0
200 400 600 A/ s 1000
°C
-diF/dt
diF/dt
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus junction temperature TVJ
Fig. 5 Typ. recovery time trr
versus -diF/dt
Fig. 6 Typ. peak forward voltage VFR
and tfr versus diF/dt
0.12
K/W
0.10
Constants for ZthJS calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.001
0.004
0.027
0.082
0.08
0.08
ZthJH
0.024
0.112
0.464
0.06
0.04
0.02
0.00
0.001
0.01
0.1
1
10
s
t
Fig. 7 Transient thermal impedance junction to heatsink
© 2000 IXYS All rights reserved
2 - 2
相关型号：
©2020 ICPDF网 联系我们和版权申明