MIXA40W1200TMH [IXYS]
Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-22;
| 型号： | MIXA40W1200TMH |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-22 局域网 栅 功率控制 晶体管 |
| 文件： | 总6页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MIXA40W1200TMH
VCES = 1200 V
Six-Pack
XPT IGBT
IC25
= 60 A
VCE(sat) = 1.8 V
Part name (Marking on product)
MIXA40W1200TMH
E 72873
Pin configuration see outlines.
Features:
Application:
Package:
• High level of integration - only one
power semiconductor module required
for the whole drive
• AC motor drives
• Pumps, Fans
• Washing machines
• Air-conditioning system
• "Mini" package
• Assembly height is 17 mm
• Insulated base plate
• Pins suitable for wave soldering and
PCB mounting
• Assembly clips available
- IXKU 5-505 screw clamp
- IXRB 5-506 click clamp
• UL registered E72873
• Rugged XPT design
(Xtreme light Punch Through) results in: • Inverter and power supplies
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x IC
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• Temperature sense included
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20101117c
1 - 6
MIXA40W1200TMH
Ouput Inverter T1 - T6
Ratings
Symbol
VCES
Definitions
Conditions
min.
typ. max. Unit
collector emitter voltage
TVJ = 25°C
1200
V
max. DC gate voltage
max. transient collector gate voltage
VGES
VGEM
continuous
transient
20
30
V
V
collector current
IC25
IC80
TC = 25°C
TC = 80°C
60
40
A
A
total power dissipation
Ptot
TC = 25°C
195
2.1
W
collector emitter saturation voltage
VCE(sat)
IC = 35 A; VGE = 15 V
TVJ = 25°C
TVJ = 125°C
1.8
2.1
V
V
gate emitter threshold voltage
collector emitter leakage current
VGE(th)
ICES
IC = 1.5 mA; VGE = VCE
VCE = VCES; VGE = 0 V
TVJ = 25°C
5.4
5.9
6.5
V
TVJ = 25°C
TVJ = 125°C
0.02
0.3
0.15
mA
mA
gate emitter leakage current
total gate charge
IGES
VGE = 20 V
500
nA
nC
QG(on)
VCE = 600 V; VGE = 15 V; IC = 35 A
106
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
td(on)
tr
td(off)
tf
Eon
Eoff
70
40
250
100
3.8
4.1
ns
ns
ns
ns
mJ
mJ
inductive load
VCE = 600 V; IC = 35 A
VGE = 15 V; RG = 27 W
TVJ = 125°C
reverse bias safe operating area
RBSOA
VGE
=
15 V; RG = 27 W; VCEK = 1200 V
105
A
TVJ = 125°C
short circuit safe operating area
ISC
VCE = 900 V; VGE = 15 V;
TVJ = 125°C
140
A
(SCSOA)
RG = 27 W; tp = 10 µs; non-repetitive
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
(per IGBT)
0.64 K/W
K/W
0.21
Output Inverter D1 - D6
Ratings
Symbol
VRRM
Definitions
Conditions
min.
typ. max. Unit
max. repetitve reverse voltage
forward current
TVJ = 25°C
1200
V
IF25
IF80
TC = 25°C
TC = 80°C
44
29
A
A
forward voltage
VF
IF = 30 A; VGE = 0 V
TVJ = 25°C
TVJ = 125°C
1.95
1.95
2.2
V
V
reverse recovery charge
max. reverse recovery current
reverse recovery time
Qrr
IRM
trr
3.5
30
350
0.9
µC
A
ns
mJ
VR = 600 V
diF /dt = -600 A/µs
IF = 30 A; VGE = 0 V
TVJ = 125°C
reverse recovery energy
Erec
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
(per diode)
1.2 K/W
K/W
0.4
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20101117c
2 - 6
MIXA40W1200TMH
Temperature Sensor NTC
Ratings
Symbol
Definitions
Conditions
min.
typ. max. Unit
resistance
R25
B25/50
TC = 25°C
4.75
5.0
3375
5.25
kW
K
100000
10000
1000
100
R
[Ω]
10
0
25
50
75
100
125
150
TC [°C]
Typ. NTC resistance vs. temperature
Module
Symbol
Ratings
typ. max. Unit
Definitions
Conditions
min.
operating temperature
max. virtual junction temperature
storage temperature
TVJ
TVJM
Tstg
-40
125
150
125
°C
°C
°C
-40
isolation voltage
VISOL
CTI
FC
IISOL < 1 mA; 50/60 Hz
2500
-
V~
comparative tracking index
mounting force
40
80
N
creep distance on surface
strike distance through air
dS
dA
12.7
12
mm
mm
Weight
35
g
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20101117c
3 - 6
MIXA40W1200TMH
Circuit Diagram
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
Part number
M = Module
I = IGBT
X = XPT
A = standard
40 = Current Rating [A]
W = 6-Pack
1200 = Reverse Voltage [V]
T = NTC
MH = MiniPack2
Ordering
Standard
Part Name
Marking on Product Delivering Mode Base Qty Ordering Code
MIXA40W1200TMH Box 20 509395
MIXA 40 W 1200 TMH
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20101117c
4 - 6
MIXA40W1200TMH
IGBT T1 - T6
70
70
60
50
40
30
20
10
0
VGE = 15 V
13 V
VGE = 15 V
17 V
19 V
11 V
60
50
40
30
20
10
0
TVJ = 25°C
IC
TVJ = 125°C
IC
[A]
[A]
T
VJ = 125°C
9 V
0
1
2
3
0
1
2
3
4
5
VCE [V]
VCE [V]
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
20
15
10
5
70
60
50
40
30
20
10
0
IC = 35 A
VCE = 600 V
IC
VGE
[A]
[V]
TVJ = 125°C
TVJ = 25°C
0
0
20 40 60 80 100 120 140
5
6
7
8
9
10 11 12 13
QG [nC]
VGE [V]
Fig. 3 Typ. tranfer characteristics
Fig. 4 Typ. turn-on gate charge
10
8
6
5
4
3
Eon
IC
VCE = 600 V
VGE 15 V
VJ = 125°C
=
35 A
RG
VCE = 600 V
VGE 15 V
=
27 Ω
=
=
Eon
T
TVJ = 125°C
Eoff
6
E
E
[mJ]
[mJ]
4
2
0
Eoff
0
20
40
IC [A]
60
80
20
40
60
80
RG [ ]
Fig. 5 Typ. switching energy vs. collector current
Fig. 6 Typ. switching energy vs. gate resistance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20101117c
5 - 6
MIXA40W1200TMH
Diode D1 - D6
60
7
6
5
4
3
2
1
TVJ = 125°C
VR = 600 V
50
60 A
40
IF
Qrr
30
30 A
15 A
[A]
20
[µC]
TVJ = 125°C
TVJ
=
25°C
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
300 400 500 600 700 800 900 1000 1100
VF [V]
diF /dt [A/µs]
Fig. 7 Typ. Forward current versus VF
Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt
70
60
50
40
30
20
10
0
700
600
TVJ = 125°C
VR = 600 V
TVJ = 125°C
VR = 600 V
60 A
500
400
300
200
100
0
30 A
15 A
IRR
trr
[A]
[ns]
60 A
30 A
15 A
300 400 500 600 700 800 900 1000 1100
300 400 500 600 700 800 900 1000 1100
diF /dt [A/µs]
diF /dt [A/µs]
Fig. 9 Typ. peak reverse current IRM vs. di/dt
Fig. 10 Typ. recovery time trr versus di/dt
2.0
10
TVJ = 125°C
VR = 600 V
1.6
1.2
0.8
0.4
0.0
60 A
30 A
Diode
1
Erec
IGBT
ZthJC
IGBT
FRD
[mJ]
[K/W]
15 A
Ri
ti
Ri
ti
0.1
1
2
3
4
0.152 0.0025 0.341 0.0025
0.072 0.03
0.308 0.03
0.108 0.08
0.217 0.03
0.348 0.03
0.294 0.08
0.01
0.001
300 400 500 600 700 800 900 1000 1100
0.01
0.1
1
10
diF /dt [A/µs]
tp [s]
Fig. 11 Typ. recovery energy Erec versus di/dt
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20101117c
6 - 6
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