MKI75-06A7T [IXYS]
Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel,;
| 型号： | MKI75-06A7T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, 晶体 晶体管 功率控制 双极性晶体管 栅 局域网 |
| 文件： | 总4页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MKI 75-06 A7
IC25
VCES
VCE(sat) typ. = 2.1 V
= 90 A
= 600 V
IGBT Modules
H-Bridge
Short Circuit SOA Capability
Square RBSOA
Preliminary Data
B3
Features
IGBTs
●
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
●
Symbol
VCES
Conditions
Maximum Ratings
600
●
TVJ = 25°C to 150°C
V
●
●
±
VGES
20
V
●
●
IC25
IC80
TC = 25°C
TC = 80°C
90
60
A
A
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
●
±
RBSOA
VGE = 15 V; R = 18 Ω; TVJ = 125°C
ICM = 120
VCEK ≤ VCES
A
µs
W
●
Clamped inducGtive load; L = 100 µH
●
●
package with copper base plate
±
tSC
(SCSOA)
VCE = VCES; VGE = 15 V; RG = 18 Ω; TVJ = 125°C
non-repetitive
10
Ptot
TC = 25°C
280
Advantages
●
space savings
reduced protection circuits
package designed for wave soldering
●
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
●
min.
typ. max.
Typical Applications
VCE(sat)
IC = 75 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.1
2.5
2.6
V
V
●
motor control
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
VGE(th)
ICES
IC = 1.5 mA; VGE = VCE
4.5
6.5
V
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
1.3 mA
mA
●
0.9
supply of transformer primary winding
- power supplies
- welding
±
IGES
VCE = 0 V; VGE
=
20 V
200 nA
- X-ray
- UPS
- battery charger
td(on)
tr
td(off)
tf
Eon
Eoff
50
50
270
40
3.5
2.5
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 75 A
±
VGE = 15 V; RG = 18 Ω
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300V; VGE = 15 V; IC = 75 A
3200
190
pF
nC
RthJC
(per IGBT)
0.44 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
1 - 4
MKI 75-06 A7
Diodes
Symbol
Equivalent Circuits for Simulation
Conduction
Conditions
Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
140
85
A
A
Symbol
VF
Conditions
Characteristic Values
min. typ. max.
IGBT (typ. at VGE = 15 V; TJ = 125°C)
IF = 75 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
1.8
1.3
2.1
V
V
V0 = 0.95 V; R0 = 20 mΩ
Free Wheeling Diode (typ. at TJ = 125°C)
IRM
trr
IF = 60 A; di /dt = -500 A/µs; TVJ = 125°C
VR = 300 V;FVGE = 0 V
28
100
A
ns
V0 = 1.014 V; R0 = 4 mΩ
B3
RthJC
(per diode)
0.61 K/W
Thermal Response
Module
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
-40...+150
-40...+125
°C
°C
IGBT (typ.)
VISOL
Md
I
ISOL ≤ 1 mA; 50/60 Hz
2500
V~
Cth1 = 0.248 J/K; Rth1 = 0.343 K/W
Cth2 = 1.849 J/K; Rth2 = 0.097 K/W
Mounting torque (M5)
2.7 - 3.3
Nm
Free Wheeling Diode (typ.)
Cth1 = 0.23 J/K; Rth1 = 0.483 K/W
Cth2 = 1.3 J/K; Rth2 = 0.127 K/W
Symbol
Conditions
Characteristic Values
min.
typ. max.
Rpin-chip
5
mΩ
dS
dA
Creepage distance on surface
Strike distance in air
6
6
mm
mm
RthCH
with heatsink compound
0.02
180
K/W
g
Weight
Dimensions in mm (1 mm = 0.0394")
© 2002 IXYS All rights reserved
2 - 4
MKI 75-06 A7
200
200
VGE= 17V
A
A
1
15V
13V
IC
IC
VGE= 17V
15V
13V
120
80
40
0
120
80
40
0
11V
11V
9V
9V
TVJ = 125°C
TVJ = 25°C
V
0
1
2
3
4
5
V
6
0
1
2
3
4
5
6
VCE
VCE
B3
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
160
200
A
A
120
IC
TVJ = 125°C
TVJ = 25°C
IF
120
80
40
0
80
40
0
TVJ = 125°C
TVJ = 25°C
VCE = 20V
V
0.0
0.5
1.0
1.5
VF
2.0
2.5
4
6
8
10
VGE
12
V
14
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
60
150
ns
20
V
A
trr
trr
15
IRM
VGE
40
30
20
10
0
100
10
5
50
0
TVJ = 125°C
VR = 300V
VCE = 300V
IF = 60A
IRM
IC
= 75A
MWI7506A7
0
0
200
400
600
-di/dt
A/µs 1000
0
40
80
120
160
nC
240
QG
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
© 2002 IXYS All rights reserved
3 - 4
MKI 75-06 A7
10.0
mJ
100
ns
5
mJ
4
500
ns
Eoff
400
75
7.5
Eoff
Eon
td(on)
tr
t
t
3
2
1
0
300
td(off)
50
25
0
5.0
2.5
0.0
VCE = 300V
VCE = 300V
200
VGE = ±15V
VGE = ±15V
RG = 18Ω
RG = 18Ω
100
TVJ = 125°C
TVJ = 125°C
Eon
0
tf
0
160
0
40
80
120
A
A
40
80
120
160
B3
IC
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
Fig. 8 Typ. turn off energy and switching
times versus collector current
10
mJ
8
100
5
500
ns
mJ
4
ns
td(on)
td(off)
80
400
Eon
Eoff
t
t
Eoff
tr
60
300
6
4
2
0
3
2
1
0
VCE = 300V
200
VCE = 300V
40
VGE = ±15V
IC = 75A
VGE = ±15V
IC = 75A
Eon
20
0
100
0
TVJ = 125°C
TVJ = 125°C
tf
Ω
Ω
0
10
20
30
40
RG
50
60
0
10
20
30
40
RG
50
60
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
Fig.10 Typ. turn off energy and switching
times versus gate resistor
1
160
A
diode
IGBT
K/W
120
0.1
ICM
ZthJC
0.01
80
40
0
single pulse
0.001
RG = 18 Ω
TVJ = 125°C
MWI7506A7
0.0001
0.00001 0.0001 0.001 0.01
0.1
1
10
s
0
100 200 300 400 500 600 700
VCE
V
t
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
© 2002 IXYS All rights reserved
4 - 4
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