首页 |元器件品牌

MUBW35-06A6 [IXYS]

Converter - Brake - Inverter Module (CBI1); 转换器 - 制动 - 逆变器模块（ CBI1 ）
MUBW35-06A6
型号： MUBW35-06A6
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Converter - Brake - Inverter Module (CBI1)
转换器 - 制动 - 逆变器模块（ CBI1 ）

转换器
文件： 总8页 (文件大小：217K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
MUBW 35-06 A6  
Converter - Brake - Inverter Module (CBI1)  
Rectifier  
Brake  
Inverter  
VRRM = 1200V  
IFAVM = 25 A  
IFSM = 370 A  
VCES = 600 V  
IC25 = 23 A  
VCE(sat) = 2.1 V  
VCES = 600 V  
IC25 = 38 A  
VCE(sat) = 2.1 V  
Features  
Input Rectifier Bridge D8 - D13  
●
NPT IGBT technology  
Symbol  
VRRM  
IF  
Conditions  
Maximum Ratings  
Square RBSOA, no latchup  
Free wheeling diodes with Hiperfast  
and soft recovery behaviour  
Isolation voltage 2500 V~  
Built in temperature sense  
High level of integration:  
one module for complete drive  
system  
●
1200  
55  
V
A
A
●
●
●
TVJ = 25°C  
IFAVM  
TVJ = 150°C; TK = 70°C  
25  
IFSM  
i²t  
TVJ = 45°C; t = 10 ms sine 50 Hz  
TVJ = 125°C  
370  
680  
A
A²s  
●
Direct Copper Bonded Al2O3 ceramic  
base plate  
TVJ  
+150  
°C  
Applications  
●
AC motor control  
Symbol  
IR  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
●
AC servo and robot drives  
Advantages  
VRRM = 1200 V; TVJ = 25°C  
TVJ = 125°C  
20 µA  
2
mA  
●
No need of external isolation  
Easy to mount with two screws  
Package designed for wave  
soldering  
●
VF  
IF = 55 A  
per die  
1.2 1.46  
V
●
RthJC  
1.05  
°C/W  
●
High temperature and power cycling  
capability  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 8  
MUBW 35-06 A6  
Output Inverter T1 - T6, D1 - D6  
Symbol  
Conditions  
Maximum Ratings  
VCES  
VCGR  
TVJ = 25°C  
600  
600  
V
V
TVJ = 25°C; RGE = 20kW  
±
VGE  
IC  
TVJ = 25°C  
20  
V
TC = 25°C  
TC = 90°C  
38  
22  
A
A
ICM  
tSC  
Ptot  
tp = 1 ms = 1% duty cycle; TC = 25°C  
TC = 90°C  
76  
44  
A
A
IGBT VCE = 600 V; TVJ = 125°C  
non-repetitive  
10  
µs  
W
TC = 25°C  
104  
TVJ  
TVJ  
Free-Wheeling Diode  
IGBT  
+150  
+150  
°C  
°C  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
ICES  
VGE = 0 V; VCE = 600 V  
1
mA  
IGES  
VCE = 0 V; VGE = 25 V  
100 nA  
VGE(th)  
V(BR)CES  
VCEsat  
VGE = VCE; IC = 0.7 mA  
4.5  
5.5  
6.5  
V
V
VGE = 0 V; IC = 10 mA; TVJ = -40°C  
600  
VGE = 15 V; IC = 30 A;TVJ = 25°C  
TVJ = 125°C  
2.1  
2.4  
2.5  
2.8  
V
V
tf  
tr  
30  
35  
ns  
ns  
Inductive load, TVJ = 125°C  
VCC = 300 V; IC = 30 A  
td(on)  
td(off)  
30  
190  
ns  
ns  
±
RG = 33 W; VGE = 15 V  
Eoff  
Eon  
0.8  
1.15  
mJ  
mJ  
Ciss  
Coss  
Crss  
1600  
170  
100  
pF  
pF  
pF  
VGE = 0 V  
VCE = 25 V  
f = 1 MHz  
gfs  
Qg  
VF  
VCE = 20 V; IC = 30 A  
8
S
VCC = 300 V; IC = 30A pulse; VGE = 15 V  
92  
nC  
IF = 30 A; VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
2
1.8  
V
V
trr  
IF = 30 A; VGE = 0 V; TVJ = 125°C  
VR = -300 V; diF/dt = -800 A/µs  
0.3  
µs  
Qr  
IF = 30 A; VR = -300 V;  
diF/dt = -800 A/µs; VGE = 0 V; TVJ = 125°C  
TVJ = 25°C  
1.8  
3.8  
µC  
µC  
Ir  
250 µA  
RthJC  
IGBT  
Diode  
(per die)  
(per die)  
1.0  
1.3  
°C/W  
°C/W  
© 2000 IXYS All rights reserved  
2 - 8  
MUBW 35-06 A6  
Brake Chopper T7, D7  
Symbol  
Conditions  
Maximum Ratings  
VCES  
VCGR  
TVJ = 25°C  
600  
600  
V
V
TVJ = 25°C; RGE = 20kW  
±
VGE  
IC  
TVJ = 25°C  
20  
V
TC = 25°C  
TC = 90°C  
23  
13  
A
A
ICM  
tSC  
Ptot  
tp = 1 ms = 1% duty cycle; TC = 25°C  
TC = 90°C  
46  
26  
A
A
IGBT VCE = 600 V; TVJ = 125°C  
non-repetitive  
10  
68  
µs  
W
TC = 25°C  
TVJ  
TVJ  
Free-Wheeling Diode  
IGBT  
+150  
+150  
°C  
°C  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
ICES  
VGE = 0 V; VCE = 600 V  
1
mA  
IGES  
VCE = 0 V; VGE = 25 V  
100 nA  
VGE(th)  
V(BR)CES  
VCE(sat)  
VGE = VCE; IC = 0.4 mA  
4.5  
5.5  
6.5  
V
V
VGE = 0 V; IC = 10 mA; TVJ = -40°C  
600  
VGE = 15 V; IC = 15 A; TVJ = 25°C  
TVJ = 125°C  
2.1  
2.4  
2.5  
2.8  
V
V
tf  
tr  
25  
25  
ns  
ns  
Inductive load, TVJ = 125°C  
VCC = 300 V; IC = 15 A  
td(on)  
td(off)  
30  
200  
ns  
ns  
±
RG = 68 W; VGE = 15 V  
Eoff  
Eon  
0.5  
0.7  
mJ  
mJ  
Ciss  
Coss  
Crss  
800  
85  
52  
pF  
pF  
pF  
VGE = 0 V  
VCE = 25 V  
f = 1 MHz  
gfs  
Qg  
VF  
VCE = 20 V; IC = 15 A  
4.5  
S
VCC = 300 V; IC = 15 A pulse; VGE = 15 V  
59  
nC  
IF = 15 A; VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
2
1.8  
V
V
trr  
IF = 15 A; VR = -300 V; TVJ = 125°C  
diF/dt = -500 A/µs; VGE = 0 V  
0.25  
µs  
Qr  
IF = 15 A; VR = -300 V;  
diF/dt = -500 A/µs; VGE = 0 V; TVJ = 125°C  
TVJ = 25°C  
0.4  
1.3  
µC  
µC  
Ir  
250 µA  
RthJC  
IGBT  
Diode  
(per die)  
(per die)  
1.5  
2.0  
°C/W  
°C/W  
© 2000 IXYS All rights reserved  
3 - 8  
MUBW 35-06 A6  
Module  
Symbol  
Tstg  
Conditions  
Maximum Ratings  
-40...+125  
2500  
°C  
VISOL  
Md  
IISOL £ 1 mA; 50/60 Hz; t = 1 min  
V~  
Mounting torque (M4)  
2.0 - 2.2  
18 - 20  
Nm  
lb.in.  
dS  
dA  
Creepage distance on surface  
Strike distance in air  
12.7  
12.7  
mm  
mm  
Weight  
typ.  
42  
g
Temperature Sensor R  
Symbol  
Conditions  
Maximum Ratings  
4.7 kW  
R
Tamb = 20°C  
For additional data see C620/4.7k 5% S+M NTC thermistor catalog  
Dimensions in mm (1 mm = 0.0394")  
57.3-0.3  
© 2000 IXYS All rights reserved  
4 - 8  
MUBW 35-06 A6  
Input Rectifier Bridge D8 - D13  
Forward characteristics  
Surge overload current  
I2t versus time (1-10 ms)  
IFSM: crest value, t: duration  
10  
1
(ZthJH is measured using 50 µm  
thermal grease)  
0.1  
D = 0  
ZthJH[K/W]  
D = 0.005  
0.01  
D = 0.01  
D = 0.02  
D = 0.05  
D = 0.1  
D = 0.2  
D = 0.5  
0.001  
0.0001  
0.00001 0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t (s)  
Transient thermal resistance junction to heatsink  
© 2000 IXYS All rights reserved  
5 - 8  
MUBW 35-06 A6  
Output Inverter T1 - T6  
2.5  
2.0  
ICpuls / IC  
1.5  
1.0  
0.5  
TVJ = 150 C  
VGE = 15 V  
0.0  
0
200  
400  
VCE  
600  
V
© 2000 IXYS All rights reserved  
6 - 8  
MUBW 35-06 A6  
Output Inverter T1 - T6  
Transient thermal resistance junction to heatsink  
10  
1
(ZthJH is measured using 50 µm  
thermal grease)  
IGBT  
thJH[K/W]  
Z
D = 0  
0.1  
D = 0.005  
D = 0.01  
D = 0.02  
D = 0.05  
D = 0.1  
D = 0.2  
D = 0.5  
0.01  
0.001  
0.00001 0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t (s)  
© 2000 IXYS All rights reserved  
7 - 8  
MUBW 35-06 A6  
Output Inverter D1 - D6  
70  
A
3000  
nC  
50  
A
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
VR = 300V  
60  
2500  
40  
30  
20  
10  
0
IRM  
Qr  
IF= 60A  
IF= 30A  
IF= 15A  
IF 50  
2000  
1500  
1000  
500  
0
TVJ=150°C  
40  
TVJ=100°C  
30  
IF= 60A  
IF= 30A  
IF= 15A  
20  
10  
0
TVJ=25°C  
A/ s  
-diF/dt  
0.0  
0.5  
1.0  
1.5  
VF  
V2.0  
100  
1000  
0
200 400 600 1000  
A/ s  
-diF/dt  
Forward current IF versus VF  
Reverse recovery charge Qr  
versus -diF/dt  
Peak reverse current IRM  
versus -diF/dt  
2.0  
1.5  
1.0  
0.5  
0.0  
130  
ns  
20  
V
1.2  
TVJ= 100°C  
VR = 300V  
s
VFR  
120  
VFR  
tfr  
tfr  
trr  
15  
0.9  
IF= 60A  
IF= 30A  
IF= 15A  
Kf  
110  
100  
90  
10  
5
0.6  
0.3  
0.
IRM  
Qr  
80  
TVJ= 100°C  
IF = 30A  
23-06A  
70  
0
A/ s  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
°C  
A/ s  
diF/dt  
TVJ  
-diF/dt  
Dynamic parameters Qr, IRM  
versus TVJ  
Recovery time trr versus -diF/dt  
Peak forward voltage VFR and tfr  
versus diF/dt  
10  
(ZthJH is measured using 50 µm  
thermal grease)  
1
FRED  
ZthJH [K/W]  
D = 0  
0.1  
0.01  
D = 0.005  
D = 0.01  
D = 0.02  
D = 0.05  
D = 0.1  
D = 0.2  
D = 0.5  
0.001  
100  
0.00001 0.0001 0.001  
0.01  
0.1  
1
10  
t (s)  
Transient thermal resistance junction to heatsink  
© 2000 IXYS All rights reserved  
8 - 8  

相关型号：

MUBW35-06A6K

 Converter - Brake - Inverter Module
IXYS

MUBW35-12A7

 Converter - Brake - Inverter Module (CBI2)
IXYS

MUBW35-12A8

 Converter - Brake - Inverter Module
IXYS

MUBW35-12E7

 Converter - Brake - Inverter Module
IXYS

MUBW4-12A6

 Insulated Gate Bipolar Transistor, 3.6A I(C), 1200V V(BR)CES, N-Channel, MODULE-25
IXYS

MUBW40-12T7

 Insulated Gate Bipolar Transistor, 62A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
LITTELFUSE

MUBW40-2T7

 Insulated Gate Bipolar Transistor,
LITTELFUSE

MUBW45-12T6K

 Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, E1-PACK-25
IXYS

MUBW50-06A7

 Converter - Brake - Inverter Module(CBI2)
IXYS

MUBW50-06A8

 Converter - Brake - Inverter Module (CBI3)
IXYS

MUBW50-12A8

 Converter - Brake - Inverter Module
IXYS

MUBW50-12E8

 Converter - Brake - Inverter Module
IXYS
©2020 ICPDF网 联系我们和版权申明