MWI75-12E8 [IXYS]

IGBT Modules; IGBT模块

MWI75-12E8


型号：	MWI75-12E8
厂家：	IXYS CORPORATION
描述：	IGBT Modules IGBT模块双极性晶体管
文件：	总2页 (文件大小：73K)
下载：	下载PDF数据表文档文件

MWI75-12T7T

Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES, N-Channel, MODULE-28

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0 LITTELFUSE

MWI75-12T7T

Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES, N-Channel, MODULE-28

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3 IXYS

MWI75-12T8T

Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-35

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2 IXYS

MWI80-12T6K

IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA

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20 IXYS

MWI80-12T6K

Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, E1-PACK, SIXPACK-24

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4 LITTELFUSE

MWIC930

RF LDMOS Wideband Integrated Power Amplifiers

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20 MOTOROLA

MWIC930

RF LDMOS Wideband Integrated Power Amplifiers

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114 MOTOROLA

MWIC930GNR1

RF LDMOS Wideband Integrated Power Amplifiers

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34 FREESCALE

MWIC930GNR1

746 MHz - 960 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 1329A-03, WB-16, TO-272, 16 PIN

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0 PHILIPS

MWIC930GR1

RF LDMOS Wideband Integrated Power Amplifiers

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8 MOTOROLA

MWIC930GR1

RF LDMOS Wideband Integrated Power Amplifiers

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47 MOTOROLA

MWIC930GR1

IC,RF AMPLIFIER,SINGLE,MOS,FLANGE MT,PLASTIC

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0 PHILIPS

MWIC930NR1

RF LDMOS Wideband Integrated Power Amplifiers

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118 FREESCALE

MWIC930NR1

Single N-CDMA, GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier, 746-960 MHz, 30 W, 26-28 V

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1 PHILIPS

MWIC930NR1,528

Wide Band High Power Amplifier

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0 PHILIPS

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