MWT-22Q4 [IXYS]
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 4 X 4 MM, QFN-16;
| 型号： | MWT-22Q4 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 4 X 4 MM, QFN-16 放大器 晶体管 |
| 文件： | 总6页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MwT-22Q4
High Power, High Linearity Packaged FET
Features
•
•
Ideal for DC-4000 MHz High Power / High Linearity Applications
Excellent RF Performance:
o
o
o
o
33 dBm P1dB
47 dBm IP3
16 dB SSG @ 2000 MHz
40% PAE
•
MTTF > 100 years @ Channel Temperature 150°C
•
QFN 4x4 mm Surface Mount Package
Description
The MwT-22Q4 is a high linearity GaAs MESFET device in low cost QFN package that is ideally suited for high power / high linearity
applications. The applications include 2G, 2.5G, and 3G wireless infrastructure standards, such as GSM, TDMA, cdma, Edge,
cdma2000, WCDMA, TD-SCDMA, and UMTS base stations. This product is also ideal for high data rate wireless LAN infrastructure
applications, such as high QAM rate 802.11 WiFi and 802.16 WiMax base stations and APs (Access Points). In addition, the product
can be used for point-to-point microwave communications links. The third order intercept performance of the MwT-22Q4 is excellent,
typically 14 dB above the 1 dB power gain compression point. The chip is produced using MwT's proprietary high linearity device
design and process with reliable metal system. All chips are passivated using MwT's patented "Diamond-Like Carbon" process for
increased durability.
• Vds=7.5V, Ids=560mA, Ta= 25 °C (1)
RF Specifications (1)
SYMBOL
PARAMETERS & CONDITIONS
FREQ
UNITS
MIN
TYP
SSG
Small Signal Gain
4 GHz
dB
12.0
13.5
P1dB
OIP3
PAE
Output Power at 1dB Compression
Output IP3
4 GHz
4 GHz
4 GHz
dBm
dBm
%
32.0
33.0
47
Power Added Efficiency at P1dB
40
(1) RF measurement is taken in a test fixture with tuners at input and output.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
MwT-22Q4
High Power, High Linearity Packaged FET
DC Specifications (Ta = 25ºC)
SYMBOL
PARAMETERS & CONDITIONS
UNITS
MIN
TYP
MAX
Saturated Drain Current
Vds=4.0 V Vgs=0.0 V
Transconductance
Vds=2.5 V Vgs=0.0 V
Pinch-off Voltage
Vds=3.0 V Ids=30 mA
Gate-to-Source Breakdown Voltage
Igs= -5.0 mA
IDSS
mA
800
1200
Gm
mS
V
500
650
-1.2
-12.0
-14.0
16
Vp
-5.0
BVGSO
BVGDO
Rth
V
-8.0
Gate-to-Drain Breakdown Voltage
Igd= -5.0 mA
V
-12.0
Thermal Resistance
°C/W
Outline Diagram
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
MwT-22Q4
High Power, High Linearity Packaged FET
Absolute Maximum Rating (Ta= 25 °C)*
SYMBOL
Vds
PARAMETERS
UNITS
V
ABSOLUTE MAXIMUM
Drain-Source Voltage
Gate-Source Voltage
Drain Current
9
Vgs
Ids
V
-6 to +0.8
mA
mA
W
800
5
6
Igs
Pdiss
Pin max
Gate Current
DC Power Dissipation
RF Input Power
dBm
+28
Tch
Channel Temperature
ºC
150
Tstg
Storage Temperature
ºC
-65 to 150
*Operation of this device above any one of these parameters may cause permanent damage.
Application Circuits
Typical RF Performance(2)
Vds=7.5V, Ids=560mA, Ta=25°C
Units
Parameter
Typical Data
2110-2170 2400-2600
Test Frequency
MHz
870-960
19
3400-3600
Gain
dB
dB
16
-11
-6
15
-10
-7
12
-10
-6
Input Return Loss
Output Return Loss
P1dB
-12
-5
dB
dB
33
33
33
32
Output IP3
Noise Figure
dBm
dB
44
46
46
45
2.7
2.9
3.0
3.8
2. See Circuit Schematic for details of matching circuits.
Typical Scattering Parameters:
(Vds=7.5V, Ids=550mA, Ta =25°C Reference Planes at Leads)
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
MwT-22Q4
High Power, High Linearity Packaged FET
F[GHz]
S11
S21
S12
S22
Mag
0.95
0.90
0.89
0.90
0.90
0.90
0.90
0.90
0.90
0.89
0.89
0.88
0.87
0.86
0.86
0.85
0.85
Ang
Mag
24.11
13.93
8.01
5.40
3.99
3.13
2.57
2.19
1.92
1.73
1.61
1.52
1.45
1.41
1.36
1.28
1.19
Ang
159.65
119.43
98.31
87.21
79.61
74.14
69.75
65.99
62.77
59.55
56.19
52.44
47.68
41.91
34.85
26.94
18.82
Mag
0.01
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
Ang
88.41
31.22
13.59
5.76
Mag
0.26
0.52
0.59
0.61
0.63
0.64
0.64
0.64
0.63
0.62
0.61
0.59
0.57
0.55
0.54
0.54
0.56
Ang
0.05
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
3.25
3.50
3.75
4.00
-33.45
-111.86
-148.14
-164.10
-172.81
-177.72
179.59
178.38
177.97
177.88
177.68
176.90
174.99
171.54
166.47
159.69
152.31
-142.44
-160.02
-173.10
-179.47
177.27
175.73
175.44
175.81
176.46
176.79
176.32
174.61
171.05
165.56
158.14
149.75
141.79
2.05
-0.10
-0.62
-1.56
-0.40
-0.54
-0.60
-1.50
-3.49
-6.70
-10.26
-15.03
-19.42
Circuit Schematic:
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
MwT-22Q4
High Power, High Linearity Packaged FET
The information and the circuit provided in this note intend to show the capability of
MWT22Q4 and to help customers use the device in their designs. It is a reference only.
0.1uF
1000pF
100pF
ATC200B104
ATC700A102
ATC100A101
-Vgs
0.1uF
1000pF
100pF
ATC200B104
ATC700A102
ATC100A101
-Vgs_1
50
L1
L4
C1
TRL1
E
TRL2
TRL3
R1
TRL4
TRL5
TRL6
E
TRL7
TRL8
TRL9
C8
TRL10
E
RF_Output
E
E
E
E
E
E
RF_Input
L3
C2
C3
C4
L2
C6
C7
C9
S
MWT22QFN
C5
Bill of Materials:
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
MwT-22Q4
High Power, High Linearity Packaged FET
Reference
Value
2.1 –2.2
Unit
Designator
0.87 – 0.96
2.4 – 2.6
3.4 – 3.6
GHz
pF
part
Size
0505
0505
0505
0505
0505
0505
0505
0505
0505
0603
0603
0603
0603
0603
C1
C2
C3
C4
C5
C6
C7
C8
C9
R1
L1
22
6
8.2
2.2
6.0
0
4.7
0
5.6
0
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip Capacitor
Chip capacitor
Chip resistor
Chip Inductor
Chip Inductor
Chip Inductor
Chip Inductor
50 Ohm TRL
pF
0
1.1
3.9
0.4
1.8
0
0.4
3.3
2.0
1.0
0
pF
0
pF
1.8
0
3.9
2.0
1.2
8.2
0
pF
pF
2.0
100
3.0
2.7
100
1.8
1.15
51
0
pF
33
0
5.6
0
pF
pF
0
0
0
Ohm
nH
nH
nH
nH
Deg.
47
0
47
0
43
0
L2
L3
0
0
0
L4
47
9.5
47
41
43
50
TRL1
TRL2
TRL3
7.5
6
14
12
0
7
0
Deg.
Deg.
50 Ohm TRL
50 Ohm TRL
10
TRL4
TRL5
TRL6
TRL7
TRL8
TRL9
TRL10
0
0
5
0
3
5
6
9.5
0
14
7
29
0
Deg.
Deg.
Deg.
Deg.
Deg.
Deg.
Deg.
50 Ohm TRL
50 Ohm TRL
50 Ohm TRL
50 Ohm TRL
50 Ohm TRL
50 Ohm TRL
50 Ohm TRL
16.5
7
21
7
29
15
48
0
7
34
0
16.5
0
0
0
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
相关型号：
MWT-270
RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, Metal Semiconductor FET, HERMETIC SEALED PACKAGE-4
IXYS
MWT-271
RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, Metal Semiconductor FET, HERMETIC SEALED PACKAGE-2
IXYS
MWT-273
RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, Metal Semiconductor FET,
IXYS
MWT-370
RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED PACKAGE-4
IXYS
MWT-371
RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED PACKAGE-2
IXYS
MWT-3HP
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-4
IXYS
MWT-3SP
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-4
IXYS
MWT-470LN
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
IXYS
MWT-473
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,
IXYS
MWT-4GN
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,
IXYS
MWT-4LN
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,
IXYS
MWT-4SN
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,
IXYS
©2020 ICPDF网 联系我们和版权申明