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MWT-671 [IXYS]

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED PACKAGE-2;
MWT-671
型号： MWT-671
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED PACKAGE-2

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MwT-6  
18 GHz High Power  
GaAs FET  
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM  
CHIP THICKNESS = 125  
50  
All Dimensions in Microns  
50  
FEATURES  
• 0.5 WATT POWER OUPUT AT 12 GHz  
• +39 dBm THIRD ORDER INTERCEPT  
• 0.3 MICRON REFRACTORY METAL/GOLD GATE  
• 900 MICRON GATE WIDTH  
70  
292  
100  
• CHOICE OF CHIP AND ONE PACKAGE TYPE  
50  
50  
50  
130  
559  
50  
DESCRIPTION  
The MwT-6 is a GaAs MESFET is ideally suited to narrow-band applications such as cellular telephone, PCN, point-to-point communica-  
tions links, and other wireless applications as the driver transistor for the output power amplifier. The third-order intercept performance of  
the MwT-6 is excellent, typically 12 dB above the 1 dB compression point. The chip is produced using MwT’s reliable metal system and  
devices from each wafer are screened to insure reliability. All chips are passivated using MwT’s patented “Diamond-Like Carbon” process  
for increased durability, Designers can use MwT’s unique BIN selection feature to choose devices from narrow Idss ranges, insuring  
consistent circuit operation.  
DC SPECIFICATIONS AT Ta = 25°C  
RF SPECIFICATIONS AT Ta = 25°C  
SYMBOL  
PARAM. & CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
SYMBOL  
PARAMETERS AND CONDITIONS  
FREQ  
UNITS  
MIN TYP  
Output Power at 1 dB Compression  
VDS= 6.0 V IDS=150mA  
Saturated Drain Current  
Vds= 4.0 V VGS= 0.0 V  
Transconductance  
P1dB  
12 GHz  
dBm  
27.0  
8.0  
26.0  
7.5  
IDSS  
mA  
90  
360  
Small Signal Gain  
VDS= 6.0 V IDS=150mA  
Gm  
mS  
V
108  
145  
SSG  
PAE  
IDSS  
12 GHz  
12 GHz  
dB  
%
Vds= 2.0 V VGS= 0.0 V  
Pinch-off Voltage  
-2.0  
-12.0  
Vp  
-5.0  
Power Added Efficiency  
VDS= 6.0V IDS= 150mA  
Vds= 3.0 V IDS= 6.0 mA  
Gate-to-Source Breakdown Volt.  
Igs= -0.6 mA  
35  
25  
BVGSO  
V
-6.0  
-8.0  
Recommended IDSS Range  
for Optimum P1dB  
240-  
330  
mA  
Gate-to-Drain Breakdown Volt.  
Igd= -0.6 mA  
BVGDO  
Rth  
V
-12.0  
Thermal  
Resistance MwT-671  
60  
60*  
MwT-6 Chip,  
°C/W  
*Overall Rth depends on case mounting.  
PARAMETER  
DEVICE EQUIVALENT CIRCUIT MODEL  
VALUE  
0.72 Ω  
Cgd  
Lg  
Rg  
Rd  
Ld  
Source Resistance  
Rs  
Source Inductance  
Ls  
0.04  
125  
0.14  
1.44  
0.017  
2.0  
0.14  
0.05  
0.15  
1.0  
nH  
Ω
pF  
Ω
pF  
nH  
nH  
pF  
Ω
pF  
Ω
pF  
mS  
psec  
Drain-Source Resistance  
Drain-Source Capacitance  
Drain Resistance  
Drain Pad Capacitance  
Drain Inductance  
Gate Bond Wire Inductance  
Gate Pad Capacitance  
Gate Resistance  
Gate-Source Capacitance  
Channel Resistance  
Gate-Drain Capacitance  
Transconductance  
Rds  
Cds  
Rd  
Cpd  
Ld  
Lg  
Cpg  
Rg  
Cgs  
Ri  
Cgd  
gm  
tau  
GATE  
DRAIN  
Cgs  
Ri  
Rds  
gm  
tau  
Cds  
Cpd  
Cpg  
Rs  
Ls  
2.0  
SOURCE  
0.07  
112.0  
2.0  
Transit Time  
ORDERING INFORMATION  
Chip  
MwT-6  
NOTE:  
Package 71  
MwT-671  
For Package information, please see supplimentary application note from our website at  
www.mwtinc.com. When placing order or inquiring, please specify BIN range, wafer no., if  
known, and screening level required.  
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208  
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.  
MwT-6  
18 GHz High Power  
GaAs FET  
MwT-6  
MwT-6  
DUAL BIAS  
OPTIONAL BONDING  
Output Reference  
Plane  
50 Ω Output  
Output Reference  
50 Ω Output  
Microstrip  
Plane  
Microstrip  
18 Mils Long  
14 Mils Long  
2 Mils  
2 Mils  
Copper Heat Sink  
5 Mils Below Level of  
Microstrip  
Copper Heat Sink  
5 Mils Below Level of  
Microstrip  
MwT  
FP6  
MwT  
FP6  
20 Mils  
20 Mils  
2 Mils  
2 Mils  
7 Mils Long  
7 Mils Long  
Gold Ridge  
Gold Ridge  
5x 33x 5 Mils  
(1 each)  
10x 10x 5 For  
Dual Bias, or  
25pF Caps for  
Single Bias  
(2 each)  
18 Mils Long  
50 Ω Input  
Microstrip  
50 Ω Input  
Microstrip  
All Bond  
Wires are 1.0  
Mil Diameter  
Input Reference  
Plane  
All Bond  
Wires are 1.0  
Mil Diameter  
Input Reference  
Plane  
SAFE OPERATING LIMITS vs. BACKSIDE CHIP  
500.0  
400.0  
Absolute Maximum  
Continuous Maximum  
150 125  
100  
75°C or Lower  
75°C or Lower  
MAXIMUM RATINGS AT Ta = 25°C  
SYMBOL  
PARAMETER  
UNITS  
CONT MAX1  
ABSOLUTE MAX2  
300.0  
200.0  
125  
100  
VDS  
Tch  
Tst  
Drain to Source Voltage  
Channel Temperature  
Storage Temperature  
RF Input Power  
V
°C  
°C  
See Safe Operating Limits  
+150  
+175  
+175  
540  
-65 to +150  
360  
mW  
Pin  
100.0  
0
NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the  
mean-time-to-failure below the design goals.  
2. Exceeding any one of these limits may cause permanent damage.  
0
2
4
6
8
Vds (V)  
BIN SELECTION  
BIN#  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
IDSS  
(mA)  
90- 105- 120- 135- 150- 165-  
105 120 135 150 165 180  
180-  
195  
195- 210-  
210 225  
225-  
240  
240-  
255  
255-  
270  
270- 285-  
285 300  
300-  
315  
315-  
330  
330-  
345  
345-  
360  
BIN ACCURACY STATEMENT  
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required.  
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208  
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.  

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