N0606YS220 [IXYS]

Silicon Controlled Rectifier, 1199 A, 2200 V, SCR, 101A335, 3 PIN;
N0606YS220
型号: N0606YS220
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Silicon Controlled Rectifier, 1199 A, 2200 V, SCR, 101A335, 3 PIN

文件: 总12页 (文件大小:315K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Date:- 18 Oct, 2004  
Data Sheet Issue:- 2  
WESTCODE  
An IXYS Company  
Phase Control Thyristor  
Types N0606YS200 to N0606YS250  
Old Type No.: N282SH20-22  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
2000-2500  
2000-2500  
2000-2500  
2100-2600  
V
V
V
V
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)M  
IT(AV)M  
IT(AV)M  
Maximum average on-state current, Tsink=55°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 3)  
606  
A
A
415  
250  
A
IT(RMS)M Nominal RMS on-state current, Tsink=25°C, (note 2)  
1199  
1034  
7100  
7800  
252×103  
305×103  
300  
A
IT(d.c.)  
D.C. on-state current, Tsink=25°C, (note 4)  
A
ITSM  
ITSM2  
I2t  
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)  
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)  
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)  
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)  
Critical rate of rise of on-state current (repetitive), (Note 6)  
Critical rate of rise of on-state current (non-repetitive), (Note 6)  
Peak reverse gate voltage  
A
A
A2s  
A2s  
A/µs  
A/µs  
V
I2t  
(di/dt)cr  
600  
VRGM  
PG(AV)  
PGM  
5
Mean forward gate power  
2
W
Peak forward gate power  
30  
W
Tj op  
Operating temperature range  
-40 to +125  
-40 to +150  
°C  
°C  
Tstg  
Storage temperature range  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.  
Data Sheet. Types N0606YS200 to N0606YS250 Issue 2  
Page 1 of 11  
October, 2004  
WESTCODE An IXYS Company  
Phase Control Thyristor Types N0606YS200 to N0606YS250  
Characteristics  
PARAMETER  
MIN.  
TYP. MAX. TEST CONDITIONS (Note 1)  
UNITS  
VTM  
VTM  
VT0  
rT  
Maximum peak on-state voltage  
Maximum peak on-state voltage  
Threshold voltage  
-
-
2.35 ITM=1550A  
2.55 ITM=1800A  
1.103  
V
V
-
-
-
-
V
Slope resistance  
-
-
0.804  
mΩ  
V/µs  
mA  
mA  
V
(dv/dt)cr Critical rate of rise of off-state voltage  
1000  
-
-
VD=80% VDRM, linear ramp, gate o/c  
IDRM  
IRRM  
VGT  
IGT  
VGD  
IH  
Peak off-state current  
Peak reverse current  
Gate trigger voltage  
-
-
-
-
-
-
-
40  
Rated VDRM  
Rated VRRM  
-
-
40  
3.0  
200  
Tj=25°C  
VD=10V, IT=3A  
Gate trigger current  
-
mA  
V
Gate non-trigger voltage  
Holding current  
-
0.25 Rated VDRM  
500 Tj=25°C  
-
mA  
µs  
tgd  
Gate-controlled turn-on delay time  
Turn-on time  
0.5  
1.5  
2000  
800  
180  
9
1
VD=67% VDRM, IT=550A, di/dt=40A/µs,  
I
FG=2A, tr=0.5µs, Tj=25°C  
tgt  
-
-
-
-
-
2
µs  
Qrr  
Qra  
Irr  
Recovered charge  
-
µC  
µC  
A
Recovered charge, 50% Chord  
Reverse recovery current  
Reverse recovery time  
1000  
I
TM=550A, tp=500µs, di/dt=40A/µs, Vr=50V  
-
-
trr  
µs  
ITM=500A, tp=500µs, di/dt=40A/µs, Vr=50V,  
Vdr=80%VDRM, dVdr/dt=20V/µs  
-
-
300  
450  
-
-
tq  
Turn-off time  
µs  
ITM=500A, tp=500µs, di/dt=40A/µs, Vr=50V,  
Vdr=80%VDRM, dVdr/dt=200V/µs  
-
-
-
-
0.05 Double side cooled  
K/W  
K/W  
kN  
RthJK  
Thermal resistance, junction to heatsink  
0.1  
9
Single side cooled  
F
Mounting force  
Weight  
5
-
-
Wt  
90  
-
g
Notes:-  
1) Unless otherwise indicated Tj=125°C.  
Data Sheet. Types N0606YS200 to N0606YS250 Issue 2  
Page 2 of 11  
October, 2004  
WESTCODE An IXYS Company  
Phase Control Thyristor Types N0606YS200 to N0606YS250  
Notes on Ratings and Characteristics  
1.0 Voltage Grade Table  
V
DRM VDSM VRRM  
VRSM  
V
VD VR  
DC V  
1250  
1350  
1450  
1500  
Voltage Grade  
V
20  
22  
24  
25  
2000  
2200  
2400  
2500  
2100  
2300  
2500  
2600  
2.0 Extension of Voltage Grades  
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.  
3.0 De-rating Factor  
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.  
4.0 Repetitive dv/dt  
Standard dv/dt is 1000V/µs.  
5.0 Snubber Components  
When selecting snubber components, care must be taken not to use excessively large values of snubber  
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to  
device damage due to the large resultant values of snubber discharge current. If required, please consult  
the factory for assistance.  
6.0 Rate of rise of on-state current  
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn-  
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not  
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the  
total device current including that from any local snubber network.  
7.0 Gate Drive  
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V  
is assumed. This gate drive must be applied when using the full di/dt capability of the device.  
IGM  
4A/µs  
IG  
tp1  
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration  
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.  
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The  
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a  
magnitude in the order of 1.5 times IGT.  
Data Sheet. Types N0606YS200 to N0606YS250 Issue 2  
Page 3 of 11  
October, 2004  
WESTCODE An IXYS Company  
Phase Control Thyristor Types N0606YS200 to N0606YS250  
8.0 Computer Modelling Parameters  
8.1 Device Dissipation Calculations  
T  
Rth  
2
VT 0 + VT 0 + 4ff 2 r WAV  
WAV =  
T
IAV =  
and:  
2ff 2 r  
T
T = Tj max TK  
Where VT0=1.103V, rT=0.804mΩ,  
Rth = Supplementary thermal impedance, see table below and  
ff = Form factor, see table below.  
Supplementary Thermal Impedance  
Conduction Angle  
30°  
0.071  
0.12  
60°  
90°  
120°  
0.061  
0.111  
0.0513  
0.1013  
180°  
0.057  
0.107  
0.0505  
0.1005  
270°  
0.053  
0.103  
d.c.  
0.05  
0.1  
Square wave Double Side Cooled  
Square wave Single Side Cooled  
Sine wave Double Side Cooled  
Sine wave Single Side Cooled  
0.069  
0.119  
0.052  
0.102  
0.065  
0.115  
0.0516  
0.1017  
0.053  
0.103  
Form Factors  
Conduction Angle  
Square wave  
Sine wave  
30°  
3.46  
3.98  
60°  
2.45  
2.78  
90°  
2
2.22  
120°  
1.73  
1.88  
180°  
1.41  
1.57  
270°  
1.15  
d.c.  
1
8.2 Calculating VT using ABCD Coefficients  
The on-state characteristic IT vs. VT, on page 6 is represented in two ways;  
(i)  
the well established VT0 and rT tangent used for rating purposes and  
(ii)  
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in  
terms of IT given below:  
VT = A + B ln  
(
IT + C IT + D IT  
)
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The  
resulting values for VT agree with the true device characteristic over a current range, which is limited to  
that plotted.  
25°C Coefficients  
125°C Coefficients  
A
B
C
D
0.6344325  
0.1054622  
A
B
C
D
-0.1326695  
0.2813411  
5.67306×10-4  
-3.752993×10-3  
9.39409×10-4  
-0.02641982  
Data Sheet. Types N0606YS200 to N0606YS250 Issue 2  
Page 4 of 11  
October, 2004  
WESTCODE An IXYS Company  
Phase Control Thyristor Types N0606YS200 to N0606YS250  
8.3 D.C. Thermal Impedance Calculation  
t  
τ p  
p=n  
r = r 1e  
t
p
p=1  
Where p = 1 to n, n is the number of terms in the series and:  
t = Duration of heating pulse in seconds.  
rt  
= Thermal resistance at time t.  
r
p
= Amplitude of pth term.  
τ
p
= Time Constant of rth term.  
The coefficients for this device are shown in the tables below:  
D.C. Double Side Cooled  
Term  
rp  
τp  
1
2
3
4
0.12000552  
0.3391689  
0.01609235  
0.09405764  
8.812673×10-3  
3.659765×10-3  
2.196197×10-3  
0.12195269  
D.C. Single Side Cooled  
3
Term  
rp  
τp  
1
2
4
5
0.06157697  
2.136132  
8.431182×10-3  
0.01031315  
0.1512408  
0.01613806  
0.04244  
5.181088×10-3  
2.889595×10-3  
1.212898  
9.0 Reverse recovery ratings  
(i) Qra is based on 50% Irm chord as shown in Fig. 1  
Fig. 1  
(ii) Qrr is based on a 150µs integration time i.e.  
150µs  
Qrr = irr .dt  
0
(iii)  
t1  
t2  
K Factor =  
Data Sheet. Types N0606YS200 to N0606YS250 Issue 2  
Page 5 of 11  
October, 2004  
WESTCODE An IXYS Company  
Phase Control Thyristor Types N0606YS200 to N0606YS250  
Curves  
Figure 1 - On-state characteristics of Limit device  
Figure 2 - Transient thermal impedance  
1
10000  
N0606YS200-250  
N0606YS200-250  
Issue 2  
Issue 2  
Tj = 25°C  
Tj = 125°C  
SSC 0.1K/W  
0.1  
DSC 0.05K/W  
1000  
0.01  
100  
0.001  
0
1
2
3
4
5
0.001  
0.01  
0.1  
1
10  
100  
Instantaneous On-state voltage - VTM (V)  
Time (s)  
Figure 3 - Gate characteristics - Trigger limits  
Figure 4 - Gate characteristics - Power curves  
30  
10  
N0606YS200-250  
N0606YS200-250  
Issue 2  
Issue 2  
Tj=25°C  
Tj=25°C  
9
25  
8
Max VG dc  
7
20  
Max VG dc  
6
5
15  
IGT, VGT  
4
3
2
1
PG Max 30W dc  
10  
PG 2W dc  
5
Min VG dc  
IGD, VGD  
Min VG dc  
0.5  
0
0
0
2
4
6
8
10  
0
0.1  
0.2  
0.3  
0.4  
0.6  
Gate Trigger Current - IGT (A)  
Gate Trigger Current - IGT (A)  
Data Sheet. Types N0606YS200 to N0606YS250 Issue 2  
Page 6 of 11  
October, 2004  
WESTCODE An IXYS Company  
Phase Control Thyristor Types N0606YS200 to N0606YS250  
Figure 5 - Total recovered charge, Qrr  
Figure 6 - Recovered charge, Qra (50% chord)  
10000  
10000  
N0606YS200-250  
N0606YS200-250  
Issue 2  
Issue 2  
Tj = 125°C  
Tj = 125°C  
2000A  
1500A  
2000A  
1500A  
1000A  
550A  
1000A  
550A  
1000  
1000  
100  
1
10  
100  
1000  
1
10  
100  
1000  
Commutation rate - di/dt (A/µs)  
Commutation rate - di/dt (A/µs)  
Figure 7 - Peak reverse recovery current, Irm  
Figure 8 - Maximum recovery time, trr (50% chord)  
1000  
100  
N0606YS200-250  
N0606YS200-250  
Issue 2  
Issue 2  
2000A  
Tj = 125°C  
Tj = 125°C  
1500A  
1000A  
550A  
100  
10  
2000A  
1500A  
1000A  
5500A  
10  
1
1
10  
100  
1000  
1
10  
100  
1000  
Commutation rate - di/dt (A/µs)  
Commutation rate - di/dt (A/µs)  
Data Sheet. Types N0606YS200 to N0606YS250 Issue 2  
Page 7 of 11  
October, 2004  
WESTCODE An IXYS Company  
Phase Control Thyristor Types N0606YS200 to N0606YS250  
Figure 9 – On-state current vs. Power dissipation –  
Double Side Cooled (Sine wave)  
Figure 10 – On-state current vs. Heatsink  
temperature - Double Side Cooled (Sine wave)  
140  
2500  
N0606YS200-250  
N0606YS200-250  
Issue 2  
Issue 2  
120  
180°  
2000  
1500  
1000  
500  
0
120°  
90°  
60°  
30°  
100  
80  
60  
40  
30°  
60°  
90° 120° 180°  
20  
0
0
200  
400  
600  
800  
0
200  
400  
600  
800  
Mean forward current (A) (Whole cycle averaged)  
Mean forward current (A) (Whole cycle averaged)  
Figure 11 – On-state current vs. Power dissipation  
– Double Side Cooled (Square wave)  
Figure 12 – On-state current vs. Heatsink  
temperature – Double Side Cooled (Square wave)  
2500  
140  
N0606YS200-250  
N0606YS200-250  
Issue 2  
Issue 2  
120  
d.c.  
2000  
270°  
180°  
100  
80  
120°  
90°  
60°  
1500  
1000  
500  
0
30°  
60  
40  
30° 60° 90° 120° 180° 270° d.c.  
20  
0
0
200  
400  
600  
800  
1000  
1200  
0
200  
400  
600  
800  
1000  
1200  
Mean Forward Current (Amps) (Whole Cycle Averaged)  
Mean Forward Current (Amps) (Whole Cycle Averaged)  
Data Sheet. Types N0606YS200 to N0606YS250 Issue 2  
Page 8 of 11  
October, 2004  
WESTCODE An IXYS Company  
Phase Control Thyristor Types N0606YS200 to N0606YS250  
Figure 13 – On-state current vs. Power dissipation  
– Single Side Cooled (Sine wave)  
Figure 14 – On-state current vs. Heatsink  
temperature – Single Side Cooled (Sine wave)  
1200  
140  
N0606YS200-250  
N0606YS200-250  
Issue 2  
Issue 2  
180°  
120°  
120  
90°  
60°  
1000  
800  
600  
400  
200  
0
30°  
100  
80  
60  
40  
30°  
60°  
90° 120° 180°  
20  
0
0
100  
200  
300  
400  
500  
600  
0
100  
200  
300  
400  
500  
600  
Mean forward current (A) (Whole cycle averaged)  
Mean forward current (A) (Whole cycle averaged)  
Figure 15 – On-state current vs. Power dissipation  
– Single Side Cooled (Square wave)  
Figure 16 – On-state current vs. Heatsink  
temperature – Single Side Cooled (Square wave)  
1200  
140  
N0606YS200-250  
N0606YS200-250  
Issue 2  
Issue 2  
d.c.  
120  
270°  
1000  
800  
600  
400  
200  
0
180°  
120°  
90°  
30° 60°  
100  
80  
60  
40  
30°  
60° 90° 120° 180° 270° d.c.  
20  
0
0
100  
200  
300  
400  
500  
600  
700  
0
100  
200  
300  
400  
500  
600  
700  
Mean Forward Current (Amps) (Whole Cycle Averaged)  
Mean Forward Current (Amps) (Whole Cycle Averaged)  
Data Sheet. Types N0606YS200 to N0606YS250 Issue 2  
Page 9 of 11  
October, 2004  
WESTCODE An IXYS Company  
Phase Control Thyristor Types N0606YS200 to N0606YS250  
Figure 17 - Maximum surge and I2t Ratings  
100000  
1.00E+07  
N0606YS200-250  
Issue 2  
Tj (initial) = 125°C  
I2t: VRRM 10V  
I2t: 60% VRRM  
1.00E+06  
10000  
ITSM: VRRM 10V  
ITSM: 60% VRRM  
1000  
1.00E+05  
1
3
5
10  
1
5
10  
50 100  
Duration of surge (ms)  
Duration of surge (cycles @ 50Hz)  
Data Sheet. Types N0606YS200 to N0606YS250 Issue 2  
Page 10 of 11  
October, 2004  
WESTCODE An IXYS Company  
Phase Control Thyristor Types N0606YS200 to N0606YS250  
Outline Drawing & Ordering Information  
101A335  
ORDERING INFORMATION  
(Please quote 10 digit code as below)  
ꢀꢀ  
N0606  
YS  
0
Voltage code  
Fixed turn-off  
VDRM/100  
time code  
20-25  
Fixed  
Fixed  
Type Code  
outline code  
Order code: N0606YS250 – 2500V VDRM, VRRM, 15.1mm clamp height capsule.  
IXYS Semiconductor GmbH  
Edisonstraße 15  
Westcode Semiconductors Ltd  
Langley Park Way, Langley Park,  
Chippenham, Wiltshire, SN15 1GE.  
Tel: +44 (0)1249 444524  
D-68623 Lampertheim  
Tel: +49 6206 503-0  
WESTCODE  
Fax: +49 6206 503-627  
Fax: +44 (0)1249 659448  
An IXYS Company  
E-mail: marcom@ixys.de  
E-mail: WSL.sales@westcode.com  
IXYS Corporation  
Westcode Semiconductors Inc  
3270 Cherry Avenue  
3540 Bassett Street  
www.westcode.com  
Santa Clara CA 95054 USA  
Tel: +1 (408) 982 0700  
Fax: +1 (408) 496 0670  
E-mail: sales@ixys.net  
Long Beach CA 90807 USA  
Tel: +1 (562) 595 6971  
Fax: +1 (562) 595 8182  
www.ixys.com  
E-mail: WSI.sales@westcode.com  
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed  
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.  
© Westcode Semiconductors Ltd.  
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.  
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily  
subject to the conditions and limits contained in this report.  
Data Sheet. Types N0606YS200 to N0606YS250 Issue 2  
Page 11 of 11  
October, 2004  
WESTCODE An IXYS Company  
Phase Control Thyristor Types N0606YS200 to N0606YS250  
Data Sheet. Types N0606YS200 to N0606YS250 Issue 2  
Page 12 of 11  
October, 2004  

相关型号:

N0606YS240

Silicon Controlled Rectifier, 1199A I(T)RMS, 1029000mA I(T), 2400V V(DRM), 2400V V(RRM), 1 Element, 101A335, 3 PIN
IXYS

N0606YS250

Silicon Controlled Rectifier, 1199A I(T)RMS, 2500V V(DRM), 2500V V(RRM), 1 Element,
IXYS

N0607N

N-Channel Power Mosfet 60 V, 65 A, 8.4 MΩ
RENESAS

N060RH02GOO

Silicon Controlled Rectifier, 98.91A I(T)RMS, 100000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-65
IXYS

N060RH04JOO

Silicon Controlled Rectifier, 98.91A I(T)RMS, 100000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-65
IXYS

N060RH04KOO

Silicon Controlled Rectifier, 98.91A I(T)RMS, 100000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-65
IXYS

N060RH06

Silicon Controlled Rectifier, 98.91A I(T)RMS, 63000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-65
IXYS

N060RH06HOO

Silicon Controlled Rectifier, 98.91A I(T)RMS, 100000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-65
IXYS

N060RH08

Silicon Controlled Rectifier, 98.91A I(T)RMS, 63000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-65
IXYS

N060RH08JOO

Silicon Controlled Rectifier, 98.91A I(T)RMS, 100000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-65
IXYS

N060RH08KOO

Silicon Controlled Rectifier, 98.91A I(T)RMS, 100000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-65
IXYS

N060RH08LOO

Silicon Controlled Rectifier, 98.91A I(T)RMS, 100000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-65
IXYS