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N1010NC320

更新时间：2024-09-18 19:11:08

品牌：IXYS

描述：Silicon Controlled Rectifier, 1978A I(T)RMS, 3200V V(DRM), 3200V V(RRM), 1 Element

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N1010NC320 概述

Silicon Controlled Rectifier, 1978A I(T)RMS, 3200V V(DRM), 3200V V(RRM), 1 Element 可控硅整流器

N1010NC320 规格参数

生命周期：	Obsolete	包装说明：	DISK BUTTON, O-CXDB-X4
Reach Compliance Code：	unknown	HTS代码：	8541.30.00.80
风险等级：	5.84	配置：	SINGLE
最大直流栅极触发电流：	300 mA	JESD-30 代码：	O-CXDB-X4
元件数量：	1	端子数量：	4
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	ROUND
封装形式：	DISK BUTTON	认证状态：	Not Qualified
最大均方根通态电流：	1978 A	断态重复峰值电压：	3200 V
重复峰值反向电压：	3200 V	表面贴装：	YES
端子形式：	UNSPECIFIED	端子位置：	UNSPECIFIED
触发设备类型：	SCR	Base Number Matches：	1

N1010NC320 数据手册

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Date:- 24 Oct, 2001

Data Sheet Issue:- 1

WESTCODE

Phase Control Thyristor

Types N1010NC300 to N1010NC380

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

3000-3800

3100-3900

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current. T_sink=55°C, (note 2)

Mean on-state current. T_sink=85°C, (note 2)

Mean on-state current. T_sink=85°C, (note 3)

Nominal RMS on-state current. T_sink=25°C, (note 2)

D.C. on-state current. T_sink=25°C, (note 4)

1010

704

436

1978

1754

Peak non-repetitive surge t_p=10ms, V_rm=0.6V_RRM, (note 5)

12100

13300

732×10³

884×10³

200

≤

Peak non-repetitive surge t_p=10ms, V_rm10V, (note 5)

I²t capacity for fusing t_p=10ms, V_rm=0.6V_RRM, (note 5)

A²s

A/µs

I²t

≤

I²t capacity for fusing t_p=10ms, V_rm10V, (note 5)

Maximum rate of rise of on-state current (repetitive), (Note 6)

Maximum rate of rise of on-state current (non-repetitive), (Note 6)

Peak reverse gate voltage

di_T/dt

400

V_RGM

P_G(AV)

P_GM

V_GD

Mean forward gate power

Peak forward gate power

Non-trigger gate voltage, (Note 7)

Operating temperature range

0.25

T_HS

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range

Notes: -

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

≤

6) V_D=67% V_DRM, I_TM=1000A, I_FG=2A, t_r0.5µs, T_case=125°C.

7) Rated V_DRM

Data Sheet. Types N1010NC300 to N1010NC380 Issue 1.

Page 1 of10

October, 2001

WESTCODE ^{Positive development in power electronics}

N1010NC300 to N1010NC380

Characteristics

PARAMETER

MIN.

TYP. MAX. TEST CONDITIONS

UNITS

(Note 1)

V_TM

V₀

Maximum peak on-state voltage

Threshold voltage

2.43 I_TM=1830A

1.17

r_S

Slope resistance

0.687

Ω

dv/dt

I_DRM

I_RRM

V_GT

I_GT

I_H

Critical rate of rise of off-state voltage

Peak off-state current

200

V_D=80% V_DRM, linear ramp, Gate O/C

V/ s

100 Rated V_DRM

100 Rated V_RRM

3.0

Peak reverse current

Gate trigger voltage

T_j=25°C, V_D=10V, I_T=2A

Gate trigger current

300

Holding current

1000 T_j=25°C

1.5

t_gd

Gate controlled turn-on delay time

Turn-on time

1.0

2.5

4800

2000

125

V_D=67%V_DRM, I_TM=1000A, di/dt=20A/µs,

µs

_FG=2A, t_r=0.5µs, T_j=25°C

t_gt

3.0

Q_rr

Q_ra

I_rm

Recovered Charge

µC

Recovered Charge, 50% chord

Reverse recovery current

Reverse recovery time, 50% chord

2500

_TM=1000A, t_p=1000µs, di/dt=10A/µs,

V_r=50V

t_rr

µs

I_TM=1000A, t_p=1000µs, di/dt=10A/µs,

V_r=50V, V_dr=80%V_DRM, dV_dr/dt=20V/µs

I_TM=1000A, t_p=1000µs, di/dt=10A/µs,

V_r=50V, V_dr=80%V_DRM, dV_dr/dt=200V/µs

600

650

t_q

Turn-off time

µs

1100

1200

0.024 Double side cooled

K/W

R_th(j-hs)Thermal resistance, junction to heatsink

0.048 Single side cooled

Mounting force

Weight

W_t

510

Notes: -

1) Unless otherwise indicated T_j=125°C.

Data Sheet. Types N1010NC300 to N1010NC380 Issue 1.

Page 2 of10

October, 2001

WESTCODE ^{Positive development in power electronics}

N1010NC300 to N1010NC380

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

_DRMV_DSMV_RRM

V_RSM

V_DV_R

DC V

1750

1800

1850

1900

1950

Voltage Grade

3000

3200

3400

3600

3800

3100

3300

3500

3700

3900

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T_jbelow 25°C.

4.0 Repetitive dv/dt

Standard dv/dt is 1000V/µs.

5.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during turn-

on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not

exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the

total device current including that from any local snubber network.

6.0 Gate Drive

Ω

The recommended pulse gate drive is 30V, 15 with a short-circuit current rise time of not more than

0.5µs. This gate drive must be applied when using the full di/dt capability of the device.

The pulse duration may need to be configured according to the application but should be no shorter than

20µs, otherwise an increase in pulse current may be needed to supply the necessary charge to trigger.

7.0 Computer Modelling Parameters

7.1 Device Dissipation Calculations

∆T

W_AV=

−V₀+ V₀+ 4 ff r_sW_AV

R_th

∆T = T_{j max}−T_Hs

I _AV=

and:

2 ff r_s

Ω,

Where V₀=1.17V, r_s=0.687m

R_th

= Supplementary thermal impedance, see table below.

ff _{= Form factor, see table below.}

Supplementary Thermal Impedance

30° 60° 90° 120°

Conduction Angle

180°

270°

d.c.

Square wave Double Side Cooled

Square wave Single Side Cooled

Sine wave Double Side Cooled

Sine wave Single Side Cooled

0.03047 0.03035 0.02857 0.02733 0.02569 0.0242

0.05823 0.0577 0.05408 0.05286 0.05121 0.0497

0.024

0.048

0.0303

0.0275

0.0262 0.02524

0.024

0.048

0.05588 0.05323 0.05186 0.05089

Form Factors

Conduction Angle

Square wave

Sine wave

30°

3.46

3.98

60°

2.45

2.78

90°

2.22

120°

1.73

1.88

180°

1.41

1.57

270°

1.15

d.c.

Data Sheet. Types N1010NC300 to N1010NC380 Issue 1.

Page 3 of10

October, 2001

WESTCODE ^{Positive development in power electronics}

N1010NC300 to N1010NC380

7.2 Calculating V_Tusing ABCD Coefficients

The on-state characteristic I_Tvs. V_T, on page 5 is represented in two ways;

(i)

the well established V₀and r_stangent used for rating purposes and

(ii)

a set of constants A, B, C, D, forming the coefficients of the representative equation for V_Tin

terms of I_Tgiven below:

V_TA B I_TC I_TD I_T

= + ln( )

The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The

resulting values for V_Tagree with the true device characteristic over a current range, which is limited to

that plotted.

25°C Coefficients

125°C Coefficients

0.9538873

0.07518263

4.912747×10^-4

-2.98×10^-3

0.571466615

0.1223907

7.111703×10^-4

-8.46958×10^-3

7.3 D.C. Thermal Impedance Calculation

p=n

−t

r = r 1− e^τ

∑

p=1

Where p = 1 to n, n is the number of terms in the series and:

t =Duration of heating pulse in seconds.

r_t

=Thermal resistance at time t.

r_p=Amplitude of p_thterm.

τ_p

=Time Constant of r_thterm.

D.C. Double Side Cooled

Term

r_p

0.01248

0.884

6.216×10^-3

1.939×10^-3

1.527×10^-3

7.612×10^-3

1.038×10^-3

1.93×10^-3

0.1221

0.03612

τ_p

D.C. Single Side Cooled

Term

0.02836

6.345

5.574×10^-3

3.588×10^-3

6.222×10^-3

2.04×10^-3

1.675×10^-3

1.258×10^-3

2.225×10^-3

r_p

3.55

0.582

0.132

0.0496

0.01015

τ_p

8.0 Reverse recovery ratings

(i) Q_rais based on 50% I_rmchord as shown in Fig. 1.

(ii) Q_rris based on a 150 s integration time.

150µs

Q_rr= i_rr.dt

∫

i.e.

(iii)

K Factor =

Fig. 1

Data Sheet. Types N1010NC300 to N1010NC380 Issue 1.

Page 4 of10

October, 2001

WESTCODE ^{Positive development in power electronics}

N1010NC300 to N1010NC380

Curves

Figure 1 - On-state characteristics of Limit device

Figure 2 - Transient Thermal Impedance

0.1

10000

N1010NC300-380

Issue 1

SSC

0.048K/W

DSC

0.024K/W

0.01

T_j= 25°C

T_j= 125°C

1000

0.001

0.0001

N1010NC300-380

Issue 1

100

0.00001

1E-05 0.0001 0.001

0.01

0.1

100

Instantaneous On-state voltage - V_TM(V)

Time (s)

Figure 3 - Gate Characteristics - Trigger Limits

Figure 4 - Gate Characteristics - Power Curves

N1010NC300-380

Issue 1

N1010NC300-380

Issue 1

T_j=25°C

Max V_Gdc

I_GT, V_GT

P_GMax 30W dc

P_G4W dc

Min V_Gdc

I_GD, V_GD

Min V_Gdc

0.25

0.5

Gate Current - I_G(A)

Data Sheet. Types N1010NC300 to N1010NC380 Issue 1.

Page 5 of10

October, 2001

WESTCODE ^{Positive development in power electronics}

N1010NC300 to N1010NC380

Figure 5 – Recovered Charge, Q_rr

Figure 6 – Recovered charge, Q_ra(50% chord)

100000

10000

N1010NC300-380

Issue 1

T_j=125°C

4000A

2000A

1000A

4000A

2000A

1000A

10000

500A

T_j=125°C

N1010NC300-380

Issue 1

1000

100

1000

100

1000

di/dt (A/µs)

Figure 7 – Reverse recovery current, I_rm

Figure 8 – Reverse recovery time, t_rr(50% chord)

100

1000.00

N1010NC300-380

Issue 1

4000A

T_j=125°C

2000A

1000A

500A

4000A

2000A

1000A

500A

100.00

10.00

100

1000

100

1000

di/dt (A/µs)

Data Sheet. Types N1010NC300 to N1010NC380 Issue 1.

Page 6 of10

October, 2001

WESTCODE ^{Positive development in power electronics}

N1010NC300 to N1010NC380

Figure 9 – On-state current vs. Power dissipation –

Double Side Cooled (Sine wave)

Figure 10 – On-state current vs. Heatsink

temperature - Double Side Cooled (Sine wave)

4500

150

N1010NC300-380

Issue 1

180°

120°

4000

90°

60°

125

100

3500

30°

3000

2500

2000

1500

1000

500

30°

60°

90° 120°

180°

N1010NC300-380

Issue 1

200

400

600

800

1000

1200

1400

200

400

600

800

1000

1200

1400

Mean forward current (A) (Whole cycle averaged)

Figure 11 – On-state current vs. Power dissipation – Figure 12 – On-state current vs. Heatsink

Double Side Cooled (Square wave)

temperature - Double Side Cooled (Square wave)

4500

150

N1010NC300-380

Issue 1

4000

3500

3000

2500

2000

1500

1000

500

125

100

d.c.

270°

180°

120°

90°

30°

60°

90°

120°

180°

270°

d.c.

60°

30°

N1010NC300-380

Issue 1

500

1000

1500

2000

500

1000

1500

2000

Mean Forward Current (Amps) (Whole Cycle Averaged)

Data Sheet. Types N1010NC300 to N1010NC380 Issue 1.

Page 7 of10

October, 2001

WESTCODE ^{Positive development in power electronics}

N1010NC300 to N1010NC380

Figure 13 – On-state current vs. Power dissipation – Figure 14 – On-state current vs. Heatsink

Single Side Cooled (Sine wave)

temperature - Single Side Cooled (Sine wave)

2500

150

N1010NC300-380

Issue 1

180°

125

100

120°

2000

90°

60°

30°

1500

1000

500

30°

60° 90° 120°

180°

N1010NC300-380

Issue 1

200

400

600

800

1000

200

400

600

800

1000

Mean forward current (A) (Whole cycle averaged)

Figure 15 – On-state current vs. Power dissipation – Figure 16 – On-state current vs. Heatsink

Single Side Cooled (Square wave)

temperature - Single Side Cooled (Square wave)

150

125

100

2500

N1010NC300-380

Issue 1

2000

1500

1000

500

d.c.

270°

180°

120°

90°

30°

60°

90°

120°

180°

270°

d.c.

60°

30°

N1010NC300-380

Issue 1

200

400

600

800

1000

1200

200

400

600

800

1000

1200

Mean Forward Current (Amps) (Whole Cycle Averaged)

Data Sheet. Types N1010NC300 to N1010NC380 Issue 1.

Page 8 of10

October, 2001

WESTCODE ^{Positive development in power electronics}

N1010NC300 to N1010NC380

Figure 17 – Maximum surge and I²t Ratings

100000

1.00E+07

I²t: V_RRM≤10V

N1010NC300-380

Issue 1

T_j(initial) = 125°C

I²t: 60% V_RRM

10000

1.00E+06

I_TSM: V_RRM≤10V

I_TSM: 60% V_RRM

1000

1.00E+05

50 100

Duration of surge (ms)

Duration of surge (cycles @ 50Hz)

Data Sheet. Types N1010NC300 to N1010NC380 Issue 1.

Page 9 of10

October, 2001

WESTCODE ^{Positive development in power electronics}

N1010NC300 to N1010NC380

Outline Drawing & Ordering Information

ORDERING INFORMATION

(Please quote 10 digit code as below)

N1010

♦ ♦

Fixed

Type Code

Fixed

Outline Code

Voltage Code

30-38

Fixed turn-off

time code

Typical order code: N1010NC320 – 3200V V_DRM/V_RRM, 27.7mm clamp height capsule.

UK: Westcode Semiconductors Ltd.

P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL.

Tel: +44 (0) 1249 444524 Fax: +44 (0) 1249 659448

E-Mail: WSL.sales@westcode.com

WESTCODE

USA: Westcode Semiconductors Inc.

3270 Cherry Avenue, Long Beach, California 90807

Tel: +1 (562) 595 6971 Fax: +1 (562) 595 8182

E-Mail: WSI.sales@westcode.com

Internet: http://www.westcode.com

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed

except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to

the conditions and limits contained in this report.

Data Sheet. Types N1010NC300 to N1010NC380 Issue 1.

Page 10 of10

October, 2001

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