N1159NC380 [IXYS]
Silicon Controlled Rectifier, 2268A I(T)RMS, 3800V V(DRM), 3800V V(RRM), 1 Element,;
| 型号： | N1159NC380 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Silicon Controlled Rectifier, 2268A I(T)RMS, 3800V V(DRM), 3800V V(RRM), 1 Element, 栅 栅极 |
| 文件： | 总11页 (文件大小：447K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Date:- 9 Apr, 2003
Data Sheet Issue:- 1
Phase Control Thyristor
Types N1159NC380 to N1159NC420
Old Type No.: N500CH30-42
Absolute Maximum Ratings
MAXIMUM
LIMITS
VOLTAGE RATINGS
UNITS
VDRM
VDSM
VRRM
VRSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
3800-4200
3800-4200
3800-4200
3900-4300
V
V
V
V
MAXIMUM
LIMITS
OTHER RATINGS
UNITS
IT(AV)M
IT(AV)M
IT(AV)M
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
1159
A
A
809
501
A
IT(RMS)M Nominal RMS on-state current, Tsink=25°C, (note 2)
2268
2015
14.5
A
IT(d.c.)
D.C. on-state current, Tsink=25°C, (note 4)
A
ITSM
ITSM2
I2t
I2t
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
kA
kA
A2s
A2s
A/µs
A/µs
V
≤
16.1
Peak non-repetitive surge tp=10ms, Vrm 10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
1.05×106
1.30×106
150
I2t capacity for fusing tp=10ms, Vrm 10V, (note 5)
≤
Critical rate of rise of on-state current (repetitive), (Note 6)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
(di/dt)cr
300
VRGM
PG(AV)
PGM
5
Mean forward gate power
2
W
Peak forward gate power
30
W
Tj op
Operating temperature range
-40 to +125
-40 to +150
°C
°C
Tstg
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
≤
6) VD=67% VDRM, IFG=2A, tr 0.5µs, Tcase=125°C.
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1
Page 1 of 11
April, 2003
WESTCODE An IXYS Company
Phase Control Thyristor Types N1159NC380 to N1159NC420
Characteristics
PARAMETER
MIN.
TYP. MAX. TEST CONDITIONS
UNITS
(Note 1)
VTM
VTM
VT0
rT
Maximum peak on-state voltage
Maximum peak on-state voltage
Threshold voltage
-
-
2.15 ITM=1830A
3.08 ITM=3480A
1.10
V
V
V
-
-
-
-
Slope resistance
-
-
0.574
Ω
m
(dv/dt)cr Critical rate of rise of off-state voltage
1000
-
-
VD=80% VDRM, linear ramp, gate o/c
µ
V/ s
IDRM
IRRM
VGT
IGT
VGD
IH
Peak off-state current
Peak reverse current
Gate trigger voltage
-
-
-
-
-
-
-
-
-
-
-
-
-
100 Rated VDRM
100 Rated VRRM
mA
mA
V
-
-
3.0
Tj=25°C
300
VD=10V, IT=3A
Gate trigger current
-
mA
V
Gate non-trigger voltage
Holding current
-
0.25 Rated VDRM
1000 Tj=25°C
-
mA
µs
µs
µC
µC
A
tgd
Gate-controlled turn-on delay time
Turn-on time
0.6
1.3
4700
2000
130
30
1.5
VD=67% VDRM, IT=1500A, di/dt=10A/µs,
I
FG=2A, tr=0.5µs, Tj=25°C
tgt
3.0
Qrr
Qra
Irr
Recovered charge
-
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
2200
I
TM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V
-
-
trr
µs
I
TM=1000A, tp=1000µs, di/dt=10A/µs,
-
-
700
-
-
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
tq
Turn-off time
µs
1000
-
-
-
0.022 Double side cooled
K/W
K/W
kN
RthJK
Thermal resistance, junction to heatsink
-
-
0.044 Single side cooled
F
Mounting force
Weight
19
-
26
-
Wt
510
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1
Page 2 of 11
April, 2003
WESTCODE An IXYS Company
Phase Control Thyristor Types N1159NC380 to N1159NC420
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
V
DRM VDSM VRRM
VRSM
V
VD VR
DC V
1950
2000
2040
Voltage Grade
V
38
40
42
3800
4000
4200
3900
4100
4300
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
8.0 Computer Modelling Parameters
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1
Page 3 of 11
April, 2003
WESTCODE An IXYS Company
Phase Control Thyristor Types N1159NC380 to N1159NC420
8.1 Device Dissipation Calculations
∆T
Rth
2
WAV =
−V0 + V0 + 4⋅ ff ⋅r ⋅WAV
s
IAV =
and:
2⋅ ff ⋅r
s
∆T = Tj max −THs
Ω,
Where V0=1.10V, rs=0.574m
R
= Supplementary thermal impedance, see table below and
th
ff
= Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
30°
60°
90°
120°
180°
0.0240
0.0469
0.022
0.044
270°
0.0228
0.0455
d.c.
0.0220
0.0440
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
0.0312
0.0543
0.0256
0.0509
0.0285
0.0513
0.0246
0.0482
0.0267
0.0496
0.0239
0.0471
0.0255
0.0484
0.0233
0.0463
Form Factors
Conduction Angle
Square wave
Sine wave
30°
3.464
3.98
60°
2.449
2.778
90°
2
2.22
120°
1.732
1.879
180°
1.414
1.57
270°
1.149
d.c.
1
8.2 Calculating VT using ABCD coefficients
The on-state characteristic IT vs. VT, on page 6 is represented in two ways;
(i)
the well established VT0 and rT tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT A B ln IT C IT D IT
= + ⋅ ( )+ ⋅ + ⋅
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for VT agree with the true device characteristic over a current range, which is limited to
that plotted.
25°C Coefficients
125°C Coefficients
A
B
C
D
0.1427085
0.2382484
A
B
C
D
0.3139796
0.1669113
6.071424×10-4
-0.0256394
6.282724×10-4
-0.0132676
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1
Page 4 of 11
April, 2003
WESTCODE An IXYS Company
Phase Control Thyristor Types N1159NC380 to N1159NC420
8.3 D.C. Thermal Impedance Calculation
−t
τ p
p=n
r = r ⋅ 1− e
∑
t
p
p=1
p = 1 n, n
to
Where
is the number of terms in the series and:
t = Duration of heating pulse in seconds.
rt
= Thermal resistance at time t.
r= Amplitude of pth term.
τ
= Time Constant of rth term.
The coefficients for this device are shown in the tables below:
D.C. Double Side Cooled
Term
rp
τp
1
2
3
4
5
0.01249139
0.8840810
6.316833×10-3
0.1215195
1.850855×10-3
0.03400152
1.922045×10-3
6.742908×10-3
6.135330×10-4
1.326292×10-3
D.C. Single Side Cooled
Term
rp
τp
1
2
3
4
5
6
0.02919832
6.298105
4.863568×10-3 3.744798×10-3 6.818034×10-3 2.183558×10-3 1.848294×10-3
3.286174
0.5359179
0.1186897
0.02404574
3.379476×10-3
9.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1
Fig. 1
µ
(ii) Qrr is based on a 150 s integration time i.e.
µs
150
Qrr = irr .dt
∫
0
(iii)
t1
t2
K Factor =
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1
Page 5 of 11
April, 2003
WESTCODE An IXYS Company
Phase Control Thyristor Types N1159NC380 to N1159NC420
Curves
Figure 1 - On-state characteristics of Limit device
Figure 2 - Transient thermal impedance
0.1
10000
N1159NC380-420
SSC
N1159NC380-420
Issue 1
Issue 1
0.044K/W
DSC
0.022K/W
Tj = 25°C
Tj = 125°C
0.01
0.001
1000
0.0001
100
0.00001
0
1
2
3
4
5
1E-05 0.0001 0.001
0.01
Time (s)
0.1
1
10
100
Instantaneous On-state voltage - VTM (V)
Figure 3 - Gate characteristics - Trigger limits
Figure 4 - Gate characteristics - Power curves
30
9
N1159NC380-420
Issue 1
N1159NC380-420
Issue 1
Tj=25°C
Tj=25°C
8
25
7
Max VG dc
20
15
10
5
6
Max VG dc
5
IGT, VGT
4
3
PG Max 30W dc
2
Min VG dc
PG 2W dc
1
IGD, VGD
Min VG dc
0
0
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
Gate Current - IG (A)
Gate Current - IG (A)
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1
Page 6 of 11
April, 2003
WESTCODE An IXYS Company
Phase Control Thyristor Types N1159NC380 to N1159NC420
Figure 5 - Total recovered charge, Qrr
Figure 6 - Recovered charge, Qra (50% chord)
100000
10000
N1159NC380-420
Issue 1
Tj=125°C
N1159NC380-420
Issue 1
Tj=125°C
2000A
1500A
1000A
2000A
1500A
10000
1000A
500A
500A
1000
1000
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 7 - Peak reverse recovery current, Irm
Figure 8 - Maximum recovery time, trr (50% chord)
100
1000
2000A
N1159NC380-420
N1159NC380-420
1500A
Issue 1
Issue 1
1000A
Tj=125°C
Tj=125°C
500A
10
100
2000A
1500A
1000A
500A
1
10
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1
Page 7 of 11
April, 2003
WESTCODE An IXYS Company
Phase Control Thyristor Types N1159NC380 to N1159NC420
Figure 9 – On-state current vs. Power dissipation –
Double Side Cooled (Sine wave)
Figure 10 – On-state current vs. Heatsink
temperature - Double Side Cooled (Sine wave)
5000
150
N1159NC380-420
N1159NC380-420
Issue 1
Issue 1
180°
4500
120°
90°
60°
125
100
75
30°
4000
3500
3000
2500
2000
1500
1000
500
50
25
30°
60°
90° 120°
180°
0
0
0
500
1000
1500
0
500
1000
1500
Mean forward current (A) (Whole cycle averaged)
Mean forward current (A) (Whole cycle averaged)
Figure 11 – On-state current vs. Power dissipation
– Double Side Cooled (Square wave)
Figure 12 – On-state current vs. Heatsink
temperature – Double Side Cooled (Square wave)
5000
150
N1159NC380-420
N1159NC380-420
Issue 1
Issue 1
4500
125
100
4000
3500
d.c.
270°
180°
120°
90°
3000
2500
2000
1500
1000
500
75
30°
60°
60°
30°
90°
120°
180°
270°
d.c.
50
25
0
0
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
Mean Forward Current (Amps) (Whole Cycle Averaged)
Mean Forward Current (Amps) (Whole Cycle Averaged)
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1
Page 8 of 11
April, 2003
WESTCODE An IXYS Company
Phase Control Thyristor Types N1159NC380 to N1159NC420
Figure 13 – On-state current vs. Power dissipation
– Single Side Cooled (Sine wave)
Figure 14 – On-state current vs. Heatsink
temperature – Single Side Cooled (Sine wave)
150
2500
N1159NC380-420
Issue 1
N1159NC380-420
Issue 1
180°
120°
90°
60°
125
100
75
30°
2000
1500
1000
500
0
50
25
30°
60°
90° 120°
180°
0
0
200
400
600
800
1000
0
200
400
600
800
1000
Mean forward current (A) (Whole cycle averaged)
Mean forward current (A) (Whole cycle averaged)
Figure 15 – On-state current vs. Power dissipation
– Single Side Cooled (Square wave)
Figure 16 – On-state current vs. Heatsink
temperature – Single Side Cooled (Square wave)
150
2500
N1159NC380-420
Issue 1
N1159NC380-420
Issue 1
125
100
2000
d.c.
1500
270°
180°
120°
90°
75
60°
30°
60°
90°
120°
180°
30°
1000
500
0
50
25
0
270°
d.c.
0
200
400
600
800
1000
1200
1400
0
200
400
600
800
1000
1200
1400
Mean Forward Current (Amps) (Whole Cycle Averaged)
Mean Forward Current (Amps) (Whole Cycle Averaged)
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1
Page 9 of 11
April, 2003
WESTCODE An IXYS Company
Phase Control Thyristor Types N1159NC380 to N1159NC420
Figure 17 - Maximum surge and I2t Ratings
100000
1.00E+07
I2t: VRRM ≤10V
N1159NC380-420
Issue 1
I2t: 60% VRRM
Tj (initial) = 125°C
10000
1.00E+06
ITSM: VRRM ≤10V
ITSM: 60% VRRM
1000
1.00E+05
1
3
5
10
1
5
10
50 100
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1
Page 10 of 11
April, 2003
WESTCODE An IXYS Company
Phase Control Thyristor Types N1159NC380 to N1159NC420
Outline Drawing & Ordering Information
ORDERING INFORMATION
(Please quote 10 digit code as below)
N1159
NC
0
Voltage code
Fixed turn-off
VDRM/100
time code
14
Fixed
Fixed
Type Code
outline code
Order code: N1159NC400 – 4000V VDRM, VRRM, 27.7mm clamp height capsule.
IXYS Semiconductor GmbH
Edisonstraße 15
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
Fax: +44 (0)1249 659448
E-mail: WSL.sales@westcode,com
IXYS Corporation
Westcode Semiconductors Inc
3270 Cherry Avenue
3540 Bassett Street
www.westcode.com
Santa Clara CA 95054 USA
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
Fax: +1 (562) 595 8182
www.ixys.net
E-mail: sales@ixys.net
E-mail: WSI.sales@westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or
© Westcode Semiconductors Ltd.
disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors
Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior
notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1
Page 11 of 11
April, 2003
相关型号：
N1159NC380-420
Silicon Controlled Rectifier, 2270A I(T)RMS, 4200V V(DRM), 4200V V(RRM), 1 Element
IXYS
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