N170CH10 [IXYS]
Silicon Controlled Rectifier, 533.8A I(T)RMS, 138000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB;![N170CH10](http://pdffile.icpdf.com/pdf2/p00220/img/icpdf/N170CH10KOO_1276690_icpdf.jpg)
型号: | N170CH10 |
厂家: | ![]() |
描述: | Silicon Controlled Rectifier, 533.8A I(T)RMS, 138000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB 栅 栅极 |
文件: | 总3页 (文件大小:425K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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N170CH10GOO
Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB
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N170CH10HOO
Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB
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N170CH10JOO
Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB
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N170CH10KOO
Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB
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N170CH10LOO
Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB
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N170CH12HOO
Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB
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N170PH04LOO
Silicon Controlled Rectifier, 307.72A I(T)RMS, 355000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element
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