N1817QL080 [IXYS]

Silicon Controlled Rectifier,;
N1817QL080
型号: N1817QL080
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Silicon Controlled Rectifier,

文件: 总13页 (文件大小:853K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Date:- 30th April, 2012  
Data Sheet Issue:- 1  
Wespack Phase Control Thyristor  
Types N1817QL080 to N1817QL140  
Development Type No.: NX371QL080-140  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
800-1400  
800-1400  
800-1400  
900-1500  
V
V
V
V
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)M  
IT(AV)M  
IT(AV)M  
Maximum average on-state current, Tsink=55°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 3)  
1760  
1180  
690  
A
A
A
IT(RMS)M Nominal RMS on-state current, Tsink=25°C, (note 2)  
3525  
2945  
22.0  
A
IT(d.c.)  
ITSM  
ITSM2  
I2t  
D.C. on-state current, Tsink=25°C, (note 4)  
A
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)  
Peak non-repetitive surge tp=10ms, Vrm£10V, (note 5)  
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)  
I2t capacity for fusing tp=10ms, Vrm£10V, (note 5)  
kA  
kA  
A2s  
A2s  
24.2  
2.42×106  
2.93×106  
100  
I2t  
(continuous, 50Hz)  
(repetitive, 50Hz, 60s)  
(non-repetitive)  
(di/dt)cr Critical rate of rise of on-state current (note 6)  
200  
A/µs  
400  
VRGM  
PG(AV)  
PGM  
Peak reverse gate voltage  
Mean forward gate power  
Peak forward gate power  
Operating temperature range  
Storage temperature range  
5
V
4
W
W
°C  
°C  
30  
Tj op  
-40 to +125  
-40 to +150  
Tstg  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, ITM=2000A, IFG=2A, tr£0.5µs, Tcase=125°C.  
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1  
Page 1 of 12  
April, 2012  
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140  
Characteristics  
PARAMETER  
MIN.  
TYP. MAX. TEST CONDITIONS (Note 1)  
UNITS  
VTM  
VTM  
VT0  
rT  
Maximum peak on-state voltage  
Maximum peak on-state voltage  
Threshold voltage  
-
-
1.50 ITM=3000A  
1.90 ITM=5300A  
0.955  
V
V
-
-
-
-
V
Slope resistance  
-
-
0.177  
mW  
V/µs  
mA  
mA  
V
(dv/dt)cr Critical rate of rise of off-state voltage  
1000  
-
-
VD=80% VDRM, linear ramp, gate o/c  
IDRM  
IRRM  
VGT  
IGT  
VGD  
IH  
Peak off-state current  
Peak reverse current  
Gate trigger voltage  
-
-
-
-
-
-
-
-
-
-
-
-
-
100 Rated VDRM  
100 Rated VRRM  
-
-
3.0  
Tj=25°C  
300  
VD=10V, IT=3A  
Gate trigger current  
-
mA  
V
Gate non-trigger voltage  
Holding current  
-
0.25 Rated VDRM  
1000 Tj=25°C  
1.5  
-
mA  
µs  
tgd  
Gate-controlled turn-on delay time  
Turn-on time  
0.6  
1.2  
1700  
1150  
110  
20  
VD=67% VDRM, IT=2000A, di/dt=10A/µs,  
IFG=2A, tr=0.5µs, Tj=25°C  
tgt  
2.5  
µs  
Qrr  
Qra  
Irr  
Recovered charge  
2150  
µC  
µC  
A
Recovered charge, 50% Chord  
Reverse recovery current  
Reverse recovery time  
-
-
-
ITM=1000A, tp=1000µs, di/dt=10A/µs,  
Vr=50V  
trr  
µs  
ITM=1000A, tp=1000µs, di/dt=10A/µs,  
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs  
ITM=1000A, tp=1000µs, di/dt=10A/µs,  
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs  
-
-
200  
300  
-
-
tq  
Turn-off time  
µs  
-
-
-
0.023 Double side cooled  
0.046 Single side cooled  
K/W  
K/W  
kN  
RthJK  
Thermal resistance, junction to heatsink  
-
-
F
Mounting force  
Weight  
16  
-
20  
-
Note 2.  
Wt  
330  
g
Notes:-  
1) Unless otherwise indicated Tj=125°C.  
2) For other clamp forces, please consult factory.  
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1  
Page 2 of 12  
April, 2012  
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140  
Notes on Ratings and Characteristics  
1.0 Voltage Grade Table  
VDRM VDSM VRRM  
VRSM  
V
900  
1100  
1300  
1500  
VD VR  
DC V  
560  
700  
810  
Voltage Grade  
V
800  
1000  
1200  
1400  
08  
10  
12  
14  
930  
2.0 Extension of Voltage Grades  
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.  
3.0 De-rating Factor  
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.  
4.0 Repetitive dv/dt  
Standard dv/dt is 1000V/µs.  
5.0 Snubber Components  
When selecting snubber components, care must be taken not to use excessively large values of snubber  
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to  
device damage due to the large resultant values of snubber discharge current. If required, please consult  
the factory for assistance.  
6.0 Rate of rise of on-state current  
The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during  
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not  
exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the  
total device current including that from any local snubber network.  
7.0 Gate Drive  
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least  
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.  
IGM  
4A/µs  
IG  
tp1  
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration  
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.  
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The  
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a  
magnitude in the order of 1.5 times IGT.  
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1  
Page 3 of 12  
April, 2012  
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140  
8.0 Computer Modelling Parameters  
8.1 Device Dissipation Calculations  
DT  
2
-VT 0 + VT 0 + 4× ff 2 ×r ×WAV  
WAV =  
T
Rth  
IAV =  
and:  
2× ff 2 ×r  
T
DT = Tj max -TK  
Where VT0=0.955V, rT=0.177mW,  
Rth = Supplementary thermal impedance, see table below and  
ff = Form factor, see table below.  
Supplementary Thermal Impedance  
Conduction Angle  
30°  
60°  
90°  
120°  
180°  
270°  
d.c.  
Square wave Double Side Cooled  
Square wave Single Side Cooled  
Sine wave Double Side Cooled  
Sine wave Single Side Cooled  
0.0322 0.0299 0.0284 0.0272 0.0255 0.0239 0.0230  
0.0548 0.0530 0.0516 0.0505 0.0488 0.0473 0.0460  
0.0302 0.0278 0.0264 0.0254 0.0231  
0.0532 0.0511 0.0498 0.0488 0.0462  
Form Factors  
Conduction Angle  
Square wave  
Sine wave  
30°  
60°  
2.45  
2.78  
90°  
2
120°  
1.73  
1.88  
180°  
1.41  
1.57  
270°  
1.15  
d.c.  
1
3.46  
3.98  
2.22  
8.2 Calculating VT using ABCD Coefficients  
The on-state characteristic IT vs. VT, on page 7 is represented in two ways;  
(i)  
the well established VT0 and rT tangent used for rating purposes and  
(ii)  
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in  
terms of IT given below:  
VT = A + B ×ln  
(
IT + C × IT + D × IT  
)
The constants, derived by curve fitting software, are given below for both hot and cold characteristics.  
The resulting values for VT agree with the true device characteristic over a current range, which is limited  
to that plotted.  
25°C Coefficients  
125°C Coefficients  
A
B
C
D
0.6593689  
0.04406249  
1.001743×10-4  
2.747447×10-3  
A
B
C
D
0.4183106  
0.06693063  
1.425135×10-4  
2.159445×10-3  
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1  
Page 4 of 12  
April, 2012  
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140  
8.3 D.C. Thermal Impedance Calculation  
p=n  
-t  
æ
ö
÷
t p  
ç
p
r = r × 1- e  
å
t
ç
÷
p=1  
è
ø
Where p = 1 to n, n is the number of terms in the series and:  
t = Duration of heating pulse in seconds.  
rt  
= Thermal resistance at time t.  
rp = Amplitude of pth term.  
= Time Constant of rth term.  
tp  
The coefficients for this device are shown in the tables below:  
D.C. Double Side Cooled  
2
Term  
rp  
1
3
4
0.01172636  
0.7288979  
4.471553×103  
4.759634×103  
2.027412×103  
3.174914×103  
0.1691487  
0.0540350  
tp  
D.C. Single Side Cooled  
3
Term  
rp  
1
2
4
5
6.516549×103  
0.03074297  
4.000628  
2.648739×103  
4.230842×103  
2.161992×103  
3.674937×103  
0.1822753  
1.346204  
0.05086185  
tp  
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1  
Page 5 of 12  
April, 2012  
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140  
9.0 Reverse recovery ratings  
(i) Qra is based on 50% Irm chord as shown in Diagram  
1
Diagram 1  
(ii) Qrr is based on a 150µs integration time i.e.  
150µs  
Qrr = irr .dt  
ò
0
(iii)  
t1  
K Factor =  
t2  
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1  
Page 6 of 12  
April, 2012  
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140  
Curves  
Figure 1 – On-state characteristics of Limit device  
Figure 2 – Transient thermal impedance  
0.1  
10000  
N1817QL080-140  
Issue 1  
SSC 0.046K/W  
DSC 0.023K/W  
N1817QL080-140  
Issue 1  
Tj = 25°C  
Tj = 125°C  
0.01  
0.001  
1000  
0.0001  
0.00001  
0.00001 0.0001 0.001  
100  
0.01  
0.1  
1
10  
100  
0
0.5  
1
1.5  
2
2.5  
Time (s)  
Instantaneous On-state voltage - VTM (V)  
Figure 3 – Gate Characteristics – Trigger limits  
Figure 4 – Gate Characteristics – Power Curves  
35  
N1817QL080-140  
Issue 1  
Tj=25°C  
30  
Max VG dc  
25  
20  
15  
10  
5
PG Max 30W dc  
PG 4W dc  
Min VG dc  
8
0
0
2
4
6
10  
Gate Trigger Current - IGT (A)  
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1  
Page 7 of 12  
April, 2012  
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140  
Figure 5 – Total Recovered Charge, Qrr  
Figure 6 – Recovered Charge, Qra (50% chord)  
10000  
10000  
N1817QL080-140  
N1817QL080-140  
Issue 1  
Issue 1  
Tj=125°C  
Tj=125°C  
2000A  
1500A  
1000A  
2000A  
1500A  
1000A  
500A  
500A  
1000  
1000  
100  
1
10  
100  
1000  
1
10  
100  
1000  
di/dt (A/µs)  
di/dt (A/µs)  
Figure 7 – Peak Reverse Recovery Current, Irm  
Figure 8 – Maximum Recovery Time, trr (50% chord)  
100  
1000  
N1817QL080-140  
2000A  
1500A  
1000A  
500A  
N1817QL080-140  
Issue 1  
Issue 1  
Tj=125°C  
Tj=125°C  
10  
100  
2000A  
1500A  
1000A  
500A  
1
10  
1
10  
100  
1000  
1
10  
100  
1000  
di/dt (A/µs)  
di/dt (A/µs)  
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1  
Page 8 of 12  
April, 2012  
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140  
Figure 9 – On-state current vs. Power dissipation –  
Double Side Cooled (Sine wave)  
Figure 10 – On-state current vs. Heatsink temperature  
– Double Side Cooled (Sine wave)  
4500  
140  
N1817QL080-140  
N1817QL080-140  
Issue 1  
Issue 1  
180°  
120°  
4000  
90°  
60°  
120  
3500  
30°  
100  
80  
3000  
2500  
2000  
1500  
1000  
500  
60  
40  
30°  
60°  
90° 120°  
180°  
20  
0
0
0
500  
1000  
1500  
2000  
2500  
0
500  
1000  
1500  
2000  
2500  
Mean forward current (A) (Whole cycle averaged)  
Mean forward current (A) (Whole cycle averaged)  
Figure 11 – On-state current vs. Power dissipation –  
Double Side Cooled (Square wave)  
Figure 12 – On-state current vs. Heatsink temperature  
– Double Side Cooled (Square wave)  
4500  
140  
N1817QL080-140  
N1817QL080-140  
Issue 1  
Issue 1  
4000  
120  
3500  
3000  
2500  
100  
30°  
60°  
80  
90°  
d.c.  
270°  
120°  
180°  
180°  
120°  
90°  
60°  
30°  
2000  
1500  
1000  
500  
0
270°  
d.c.  
60  
40  
20  
0
0
500  
1000  
1500  
2000  
2500  
3000  
3500  
0
500  
1000  
1500  
2000  
2500  
3000  
3500  
Mean Forward Current (A) (Whole Cycle Averaged)  
Mean Forward Current (A) (Whole Cycle Averaged)  
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1  
Page 9 of 12  
April, 2012  
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140  
Figure 13 – On-state current vs. Power dissipation –  
Single Side Cooled (Sine wave)  
Figure 14 – On-state current vs. Heatsink temperature  
– Single Side Cooled (Sine wave)  
2500  
140  
N1817QL080-140  
N1817QL080-140  
Issue 1  
Issue 1  
180°  
120  
120°  
90°  
60°  
2000  
30°  
100  
80  
1500  
60  
1000  
500  
0
40  
30°  
60°  
90° 120° 180°  
20  
0
0
500  
1000  
1500  
0
500  
1000  
1500  
Mean forward current (A) (Whole cycle averaged)  
Mean forward current (A) (Whole cycle averaged)  
Figure 15 – On-state current vs. Power dissipation –  
Single Side Cooled (Square wave)  
Figure 16 – On-state current vs. Heatsink temperature  
– Single Side Cooled (Square wave)  
2500  
140  
N1817QL080-140  
N1817QL080-140  
Issue 1  
Issue 1  
120  
2000  
100  
80  
1500  
d.c.  
270°  
180°  
120°  
90°  
60°  
30°  
30°  
60°  
90°  
120°  
180°  
270°  
d.c.  
60  
40  
20  
0
1000  
500  
0
0
500  
1000  
1500  
2000  
0
500  
1000  
1500  
2000  
Mean Forward Current (A) (Whole Cycle Averaged)  
Mean Forward Current (A) (Whole Cycle Averaged)  
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1  
Page 10 of 12  
April, 2012  
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140  
Figure 17 – Maximum surge and I2t Ratings  
Gate may temporarily lose control of conduction angle  
100000  
1.00E+08  
1.00E+07  
1.00E+06  
I2t: VRRM £10V  
I2t: 60% VRRM  
10000  
ITSM: VRRM £10V  
ITSM: 60% VRRM  
N1817QL080-140  
Issue 1  
Tj (initial) = 125°C  
50 100  
1000  
1
3
5
10  
1
5
10  
Duration of surge (ms)  
Duration of surge (cycles @ 50Hz)  
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1  
Page 11 of 12  
April, 2012  
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140  
Outline Drawing & Ordering Information  
101A389  
ORDERING INFORMATION  
(Please quote 10 digit code as below)  
tt  
N1817  
QL  
0
Voltage code  
VDRM/100  
08-14  
Fixed  
Type Code  
Fixed  
outline code  
Fixed turn-off  
time code  
Order code: N1817QL140 – 1400V VDRM, VRRM, 26mm clamp height capsule.  
IXYS Semiconductor GmbH  
Edisonstraße 15  
D-68623 Lampertheim  
Tel: +49 6206 503-0  
IXYS UK Westcode Ltd  
Langley Park Way, Langley Park,  
Chippenham, Wiltshire, SN15 1GE.  
Tel: +44 (0)1249 444524  
Fax: +49 6206 503-627  
E-mail: marcom@ixys.de  
Fax: +44 (0)1249 659448  
E-mail: sales@ixysuk.com  
IXYS Long Beach  
IXYS Long Beach, Inc  
IXYS Corporation  
1590 Buckeye Drive  
Milpitas CA 95035-7418  
2500 Mira Mar Ave, Long Beach  
CA 90815  
www.ixysuk.com  
Tel: +1 (408) 457 9000  
Tel: +1 (562) 296 6584  
Fax: +1 (408) 496 0670  
E-mail: sales@ixys.net  
Fax: +1 (562) 296 6585  
E-mail: service@ixyslongbeach.com  
www.ixys.com  
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed  
except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.  
© IXYS UK Westcode Ltd.  
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without  
prior notice.  
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily  
subject to the conditions and limits contained in this report.  
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1  
Page 12 of 12  
April, 2012  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

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