N1817QL080 [IXYS]
Silicon Controlled Rectifier,;型号: | N1817QL080 |
厂家: | IXYS CORPORATION |
描述: | Silicon Controlled Rectifier, |
文件: | 总13页 (文件大小:853K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Date:- 30th April, 2012
Data Sheet Issue:- 1
Wespack Phase Control Thyristor
Types N1817QL080 to N1817QL140
Development Type No.: NX371QL080-140
Absolute Maximum Ratings
MAXIMUM
LIMITS
VOLTAGE RATINGS
UNITS
VDRM
VDSM
VRRM
VRSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
800-1400
800-1400
800-1400
900-1500
V
V
V
V
MAXIMUM
LIMITS
OTHER RATINGS
UNITS
IT(AV)M
IT(AV)M
IT(AV)M
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
1760
1180
690
A
A
A
IT(RMS)M Nominal RMS on-state current, Tsink=25°C, (note 2)
3525
2945
22.0
A
IT(d.c.)
ITSM
ITSM2
I2t
D.C. on-state current, Tsink=25°C, (note 4)
A
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm£10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm£10V, (note 5)
kA
kA
A2s
A2s
24.2
2.42×106
2.93×106
100
I2t
(continuous, 50Hz)
(repetitive, 50Hz, 60s)
(non-repetitive)
(di/dt)cr Critical rate of rise of on-state current (note 6)
200
A/µs
400
VRGM
PG(AV)
PGM
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
5
V
4
W
W
°C
°C
30
Tj op
-40 to +125
-40 to +150
Tstg
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=2000A, IFG=2A, tr£0.5µs, Tcase=125°C.
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1
Page 1 of 12
April, 2012
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140
Characteristics
PARAMETER
MIN.
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
VTM
VT0
rT
Maximum peak on-state voltage
Maximum peak on-state voltage
Threshold voltage
-
-
1.50 ITM=3000A
1.90 ITM=5300A
0.955
V
V
-
-
-
-
V
Slope resistance
-
-
0.177
mW
V/µs
mA
mA
V
(dv/dt)cr Critical rate of rise of off-state voltage
1000
-
-
VD=80% VDRM, linear ramp, gate o/c
IDRM
IRRM
VGT
IGT
VGD
IH
Peak off-state current
Peak reverse current
Gate trigger voltage
-
-
-
-
-
-
-
-
-
-
-
-
-
100 Rated VDRM
100 Rated VRRM
-
-
3.0
Tj=25°C
300
VD=10V, IT=3A
Gate trigger current
-
mA
V
Gate non-trigger voltage
Holding current
-
0.25 Rated VDRM
1000 Tj=25°C
1.5
-
mA
µs
tgd
Gate-controlled turn-on delay time
Turn-on time
0.6
1.2
1700
1150
110
20
VD=67% VDRM, IT=2000A, di/dt=10A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
tgt
2.5
µs
Qrr
Qra
Irr
Recovered charge
2150
µC
µC
A
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
-
-
-
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V
trr
µs
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
-
-
200
300
-
-
tq
Turn-off time
µs
-
-
-
0.023 Double side cooled
0.046 Single side cooled
K/W
K/W
kN
RthJK
Thermal resistance, junction to heatsink
-
-
F
Mounting force
Weight
16
-
20
-
Note 2.
Wt
330
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) For other clamp forces, please consult factory.
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1
Page 2 of 12
April, 2012
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
VDRM VDSM VRRM
VRSM
V
900
1100
1300
1500
VD VR
DC V
560
700
810
Voltage Grade
V
800
1000
1200
1400
08
10
12
14
930
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1
Page 3 of 12
April, 2012
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140
8.0 Computer Modelling Parameters
8.1 Device Dissipation Calculations
DT
2
-VT 0 + VT 0 + 4× ff 2 ×r ×WAV
WAV =
T
Rth
IAV =
and:
2× ff 2 ×r
T
DT = Tj max -TK
Where VT0=0.955V, rT=0.177mW,
Rth = Supplementary thermal impedance, see table below and
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
30°
60°
90°
120°
180°
270°
d.c.
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
0.0322 0.0299 0.0284 0.0272 0.0255 0.0239 0.0230
0.0548 0.0530 0.0516 0.0505 0.0488 0.0473 0.0460
0.0302 0.0278 0.0264 0.0254 0.0231
0.0532 0.0511 0.0498 0.0488 0.0462
Form Factors
Conduction Angle
Square wave
Sine wave
30°
60°
2.45
2.78
90°
2
120°
1.73
1.88
180°
1.41
1.57
270°
1.15
d.c.
1
3.46
3.98
2.22
8.2 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs. VT, on page 7 is represented in two ways;
(i)
the well established VT0 and rT tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ×ln
(
IT + C × IT + D × IT
)
The constants, derived by curve fitting software, are given below for both hot and cold characteristics.
The resulting values for VT agree with the true device characteristic over a current range, which is limited
to that plotted.
25°C Coefficients
125°C Coefficients
A
B
C
D
0.6593689
0.04406249
1.001743×10-4
2.747447×10-3
A
B
C
D
0.4183106
0.06693063
1.425135×10-4
2.159445×10-3
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1
Page 4 of 12
April, 2012
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140
8.3 D.C. Thermal Impedance Calculation
p=n
-t
æ
ö
÷
t p
ç
p
r = r × 1- e
å
t
ç
÷
p=1
è
ø
Where p = 1 to n, n is the number of terms in the series and:
t = Duration of heating pulse in seconds.
rt
= Thermal resistance at time t.
rp = Amplitude of pth term.
= Time Constant of rth term.
tp
The coefficients for this device are shown in the tables below:
D.C. Double Side Cooled
2
Term
rp
1
3
4
0.01172636
0.7288979
4.471553×103
4.759634×103
2.027412×103
3.174914×103
0.1691487
0.0540350
tp
D.C. Single Side Cooled
3
Term
rp
1
2
4
5
6.516549×103
0.03074297
4.000628
2.648739×103
4.230842×103
2.161992×103
3.674937×103
0.1822753
1.346204
0.05086185
tp
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1
Page 5 of 12
April, 2012
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140
9.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Diagram
1
Diagram 1
(ii) Qrr is based on a 150µs integration time i.e.
150µs
Qrr = irr .dt
ò
0
(iii)
t1
K Factor =
t2
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1
Page 6 of 12
April, 2012
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140
Curves
Figure 1 – On-state characteristics of Limit device
Figure 2 – Transient thermal impedance
0.1
10000
N1817QL080-140
Issue 1
SSC 0.046K/W
DSC 0.023K/W
N1817QL080-140
Issue 1
Tj = 25°C
Tj = 125°C
0.01
0.001
1000
0.0001
0.00001
0.00001 0.0001 0.001
100
0.01
0.1
1
10
100
0
0.5
1
1.5
2
2.5
Time (s)
Instantaneous On-state voltage - VTM (V)
Figure 3 – Gate Characteristics – Trigger limits
Figure 4 – Gate Characteristics – Power Curves
35
N1817QL080-140
Issue 1
Tj=25°C
30
Max VG dc
25
20
15
10
5
PG Max 30W dc
PG 4W dc
Min VG dc
8
0
0
2
4
6
10
Gate Trigger Current - IGT (A)
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1
Page 7 of 12
April, 2012
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140
Figure 5 – Total Recovered Charge, Qrr
Figure 6 – Recovered Charge, Qra (50% chord)
10000
10000
N1817QL080-140
N1817QL080-140
Issue 1
Issue 1
Tj=125°C
Tj=125°C
2000A
1500A
1000A
2000A
1500A
1000A
500A
500A
1000
1000
100
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 7 – Peak Reverse Recovery Current, Irm
Figure 8 – Maximum Recovery Time, trr (50% chord)
100
1000
N1817QL080-140
2000A
1500A
1000A
500A
N1817QL080-140
Issue 1
Issue 1
Tj=125°C
Tj=125°C
10
100
2000A
1500A
1000A
500A
1
10
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1
Page 8 of 12
April, 2012
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140
Figure 9 – On-state current vs. Power dissipation –
Double Side Cooled (Sine wave)
Figure 10 – On-state current vs. Heatsink temperature
– Double Side Cooled (Sine wave)
4500
140
N1817QL080-140
N1817QL080-140
Issue 1
Issue 1
180°
120°
4000
90°
60°
120
3500
30°
100
80
3000
2500
2000
1500
1000
500
60
40
30°
60°
90° 120°
180°
20
0
0
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
Mean forward current (A) (Whole cycle averaged)
Mean forward current (A) (Whole cycle averaged)
Figure 11 – On-state current vs. Power dissipation –
Double Side Cooled (Square wave)
Figure 12 – On-state current vs. Heatsink temperature
– Double Side Cooled (Square wave)
4500
140
N1817QL080-140
N1817QL080-140
Issue 1
Issue 1
4000
120
3500
3000
2500
100
30°
60°
80
90°
d.c.
270°
120°
180°
180°
120°
90°
60°
30°
2000
1500
1000
500
0
270°
d.c.
60
40
20
0
0
500
1000
1500
2000
2500
3000
3500
0
500
1000
1500
2000
2500
3000
3500
Mean Forward Current (A) (Whole Cycle Averaged)
Mean Forward Current (A) (Whole Cycle Averaged)
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1
Page 9 of 12
April, 2012
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140
Figure 13 – On-state current vs. Power dissipation –
Single Side Cooled (Sine wave)
Figure 14 – On-state current vs. Heatsink temperature
– Single Side Cooled (Sine wave)
2500
140
N1817QL080-140
N1817QL080-140
Issue 1
Issue 1
180°
120
120°
90°
60°
2000
30°
100
80
1500
60
1000
500
0
40
30°
60°
90° 120° 180°
20
0
0
500
1000
1500
0
500
1000
1500
Mean forward current (A) (Whole cycle averaged)
Mean forward current (A) (Whole cycle averaged)
Figure 15 – On-state current vs. Power dissipation –
Single Side Cooled (Square wave)
Figure 16 – On-state current vs. Heatsink temperature
– Single Side Cooled (Square wave)
2500
140
N1817QL080-140
N1817QL080-140
Issue 1
Issue 1
120
2000
100
80
1500
d.c.
270°
180°
120°
90°
60°
30°
30°
60°
90°
120°
180°
270°
d.c.
60
40
20
0
1000
500
0
0
500
1000
1500
2000
0
500
1000
1500
2000
Mean Forward Current (A) (Whole Cycle Averaged)
Mean Forward Current (A) (Whole Cycle Averaged)
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1
Page 10 of 12
April, 2012
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140
Figure 17 – Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
100000
1.00E+08
1.00E+07
1.00E+06
I2t: VRRM £10V
I2t: 60% VRRM
10000
ITSM: VRRM £10V
ITSM: 60% VRRM
N1817QL080-140
Issue 1
Tj (initial) = 125°C
50 100
1000
1
3
5
10
1
5
10
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1
Page 11 of 12
April, 2012
Wespack Phase Control Thyristor Types N1817QL080 to N1817QL140
Outline Drawing & Ordering Information
101A389
ORDERING INFORMATION
(Please quote 10 digit code as below)
tt
N1817
QL
0
Voltage code
VDRM/100
08-14
Fixed
Type Code
Fixed
outline code
Fixed turn-off
time code
Order code: N1817QL140 – 1400V VDRM, VRRM, 26mm clamp height capsule.
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
IXYS UK Westcode Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
Fax: +44 (0)1249 659448
E-mail: sales@ixysuk.com
IXYS Long Beach
IXYS Long Beach, Inc
IXYS Corporation
1590 Buckeye Drive
Milpitas CA 95035-7418
2500 Mira Mar Ave, Long Beach
CA 90815
www.ixysuk.com
Tel: +1 (408) 457 9000
Tel: +1 (562) 296 6584
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
Fax: +1 (562) 296 6585
E-mail: service@ixyslongbeach.com
www.ixys.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
© IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without
prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.
Data Sheet. Types N1817QL080 to N1817QL140 Issue 1
Page 12 of 12
April, 2012
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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