N2500VC120 [IXYS]
Silicon Controlled Rectifier, 4985A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element,;型号: | N2500VC120 |
厂家: | IXYS CORPORATION |
描述: | Silicon Controlled Rectifier, 4985A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 栅 栅极 |
文件: | 总10页 (文件大小:133K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Date:- 20 Nov, 2001
Data Sheet Issue:- 1
WESTCODE
Phase Control Thyristor
Types N2500VC120 to N2500VC160
Absolute Maximum Ratings
MAXIMUM
LIMITS
VOLTAGE RATINGS
UNITS
VDRM
VDSM
VRRM
VRSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
1200-1600
1200-1600
1200-1600
1300-1700
V
V
V
V
MAXIMUM
LIMITS
OTHER RATINGS
UNITS
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
Mean on-state current. Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current. Tsink=25°C, (note 2)
D.C. on-state current. Tsink=25°C, (note 4)
2500
1684
A
A
992
A
4985
A
4199
A
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
37000
45000
6.85×106
10.1×106
150
A
≤
A
Peak non-repetitive surge tp=10ms, Vrm 10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
A2s
A2s
A/µs
A/µs
V
I2t
≤
I2t capacity for fusing tp=10ms, Vrm 10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
diT/dt
300
VRGM
PG(AV)
PGM
VGD
5
Mean forward gate power
5
W
Peak forward gate power
30
W
Non-trigger gate voltage, (Note 7)
Operating temperature range
0.25
V
THS
-40 to +125
-40 to +150
°C
°C
Tstg
Storage temperature range
Notes: -
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
≤
6) VD=67% VDRM, ITM=1000A, IFG=2A, tr 0.5µs, Tcase=125°C.
7) Rated VDRM
.
Data Sheet. Types N2500VC120 to N2500VC160 Issue 1.
Page 1 of 10
November, 2001
WESTCODE Positive development in power electronics
N2500VC120 to N2500VC160
Characteristics
PARAMETER
MIN.
TYP. MAX. TEST CONDITIONS
UNITS
(Note 1)
VTM
V0
Maximum peak on-state voltage
Threshold voltage
-
-
1.28 ITM=3220A
V
V
-
-
0.88
rS
Slope resistance
-
-
0.124
Ω
m
dv/dt
IDRM
IRRM
VGT
IGT
IH
Critical rate of rise of off-state voltage
Peak off-state current
200
-
-
VD=80% VDRM, linear ramp, Gate O/C
µ
V/ s
-
-
-
-
-
-
-
-
-
-
-
-
-
150 Rated VDRM
150 Rated VRRM
3.0
mA
mA
V
Peak reverse current
Gate trigger voltage
-
Tj=25°C, VD=10V, IT=3A
Gate trigger current
-
300
mA
mA
Holding current
-
1000 Tj=25°C
2.0
tgd
Gate controlled turn-on delay time
Turn-on time
1.0
1.5
2200
1300
100
20.0
VD=67%VDRM, ITM=2000A, di/dt=10A/µs,
µs
I
FG=2A, tr=0.5µs, Tj=25°C
tgt
2.5
Qrr
Qra
Irm
Recovered Charge
-
µC
µC
A
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
1800
I
TM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V
-
-
trr
µs
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs
-
-
500
800
800
tq
Turn-off time
µs
1200
-
-
-
-
0.017 Double side cooled
K/W
K/W
kN
Rth(j-hs) Thermal resistance, junction to heatsink
0.034 Single side cooled
F
Mounting force
Weight
27
-
-
34
-
Wt
1.0
kg
Notes: -
1) Unless otherwise indicated Tj=125°C.
Data Sheet. Types N2500VC120 to N2500VC160 Issue 1.
Page 2 of 10
November, 2001
WESTCODE Positive development in power electronics
N2500VC120 to N2500VC160
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
V
DRM VDSM VRRM
VRSM
V
1300
1500
1700
VD VR
DC V
810
930
1040
Voltage Grade
V
12
14
16
1200
1400
1600
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
6.0 Gate Drive
Ω
The recommended pulse gate drive is 30V, 15 with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The pulse duration may need to be configured according to the application but should be no shorter than
20µs, otherwise an increase in pulse current may be needed to supply the necessary charge to trigger.
7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
∆T
2
2
WAV =
−V0 + V0 + 4 ff rs WAV
Rth
∆T = Tj max −THs
I AV =
and:
2
2 ff rs
Ω,
Where V0=0.88V, rs=0.124m
Rth
= Supplementary thermal impedance, see table below.
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
30°
60°
90°
120°
180°
270°
d.c.
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
0.0263
0.0438
0.0238
0.0426
0.0237
0.0418
0.021
0.022
0.040
0.0196
0.0382
0.0207
0.038
0.0187
0.0373
0.0192
0.0367
0.0169
0.0356
0.0179
0.0357
0.0171
0.034
0.0396
Form Factors
Conduction Angle
Square wave
Sine wave
30°
3.46
3.98
60°
2.45
2.78
90°
2
2.22
120°
1.73
1.88
180°
1.41
1.57
270°
1.15
d.c.
1
Data Sheet. Types N2500VC120 to N2500VC160 Issue 1.
Page 3 of 10
November, 2001
WESTCODE Positive development in power electronics
N2500VC120 to N2500VC160
7.2 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs. VT, on page 5 is represented in two ways;
(i)
the well established V0 and rs tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT A B IT C IT D IT
= + ln( )
+
+
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for VT agree with the true device characteristic over a current range, which is limited to
that plotted.
125°C Coefficients
A
B
C
D
0.592114202
-7.608075×10-3
6.807×10-5
9.342666×10-3
7.3 D.C. Thermal Impedance Calculation
−t
p=n
r = r 1− eτ
p
∑
t
p
=
p 1
Where p = 1 to n, n is the number of terms in the series and:
t =Duration of heating pulse in seconds.
rt
=Thermal resistance at time t.
rp =Amplitude of pth term.
τp
=Time Constant of rth term.
D.C. Double Side Cooled
Term
rp
1
2
3
4
8.74×10-3
5.08×10-3
1.80×10-3
1.54×10-3
2.3×10-3
1.328
0.157
0.0242
τp
D.C. Single Side Cooled
Term
1
2
3
4
5
6
7
0.0204
9.877
4.47×10-3
2.66×10-3
4.62×10-3
1.50×10-3
1.08×10-3
1.29×10-3
1.77×10-3
rp
5.385
0.781
0.161
0.0524
0.0106
τp
8.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1.
µ
(ii) Qrr is based on a 150 s integration time.
150µs
Qrr = irr .dt
∫
i.e.
0
t1
(iii)
K Factor =
Fig. 1
t2
Data Sheet. Types N2500VC120 to N2500VC160 Issue 1.
Page 4 of 10
November, 2001
WESTCODE Positive development in power electronics
N2500VC120 to N2500VC160
Curves
Figure 1 - On-state characteristics of Limit device
Figure 2 - Transient Thermal Impedance
0.1
10000
N2500VC120-160
Issue 1
SSC
0.034K/W
Tj = 25°C
Tj = 125°C
DSC
0.017K/W
0.01
1000
0.001
0.0001
N2500VC120-160
Issue 1
100
0.00001
1E-05 0.0001 0.001
0
0.5
1
1.5
2
0.01
0.1
1
10
100
Instantaneous On-state voltage - VTM (V)
Time (s)
Figure 3 - Gate Characteristics - Trigger Limits
Figure 4 - Gate Characteristics - Power Curves
25
7
N2500VC120-160
Issue 1
N2500VC120-160
Issue 1
Tj=25°C
Tj=25°C
6
20
5
Max VG dc
Max VG dc
15
4
IGT, VGT
3
10
PG Max 30W dc
2
PG 5W dc
5
Min VG dc
1
IGD, VGD
Min VG dc
0
0
0
0.2
0.4
0.6
0.8
0
2
4
6
8
10
Gate Current - IG (A)
Gate Current - IG (A)
Data Sheet. Types N2500VC120 to N2500VC160 Issue 1.
Page 5 of 10
November, 2001
WESTCODE Positive development in power electronics
N2500VC120 to N2500VC160
Figure 5 – Recovered Charge, Qrr
Figure 6 – Recovered charge, Qra (50% chord)
10000
10000
N2500VC120-160
Issue 1
4000A
Tj=125°C
2000A
1000A
500A
4000A
2000A
1000A
500A
Tj=125°C
N2500VC120-160
Issue 1
1000
1000
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 7 – Reverse recovery current, Irm
Figure 8 – Reverse recovery time, trr (50% chord)
100
1000.00
N2500VC120-160
N2500VC120-160
4000A
Issue 1
Issue 1
2000A
Tj=125°C
Tj=125°C
1000A
500A
4000A
2000A
1000A
500A
10
100.00
1
10.00
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Data Sheet. Types N2500VC120 to N2500VC160 Issue 1.
Page 6 of 10
November, 2001
WESTCODE Positive development in power electronics
N2500VC120 to N2500VC160
Figure 9 – On-state current vs. Power dissipation –
Double Side Cooled (Sine wave)
Figure 10 – On-state current vs. Heatsink
temperature - Double Side Cooled (Sine wave)
7000
150
N2500VC120-160
Issue 1
180°
6000
125
100
75
120°
90°
5000
60°
30°
4000
3000
2000
1000
50
25
30°
60°
90°
120°
180°
N2500VC120-160
Issue 1
0
0
0
1000
2000
3000
4000
0
500
1000
1500
2000
2500
3000
3500
Mean forward current (A) (Whole cycle averaged)
Mean forward current (A) (Whole cycle averaged)
Figure 11 – On-state current vs. Power dissipation – Figure 12 – On-state current vs. Heatsink
Double Side Cooled (Square wave)
temperature - Double Side Cooled (Square wave)
7000
150
N2500VC120-160
Issue 1
6000
5000
4000
125
100
75
50
25
0
30°
60°
90°
120°
180°
270°
d.c.
d.c.
270°
180°
120°
90°
60°
30°
3000
2000
1000
0
N2500VC120-160
Issue 1
0
1000
2000
3000
4000
5000
0
1000
2000
3000
4000
5000
Mean Forward Current (Amps) (Whole Cycle Averaged)
Mean Forward Current (Amps) (Whole Cycle Averaged)
Data Sheet. Types N2500VC120 to N2500VC160 Issue 1.
Page 7 of 10
November, 2001
WESTCODE Positive development in power electronics
N2500VC120 to N2500VC160
Figure 13 – On-state current vs. Power dissipation – Figure 14 – On-state current vs. Heatsink
Single Side Cooled (Sine wave)
temperature - Single Side Cooled (Sine wave)
3000
150
N2500VC120-160
Issue 1
180°
120°
90°
60°
2500
125
100
75
30°
2000
1500
1000
500
0
50
25
30°
60° 90° 120° 180°
N2500VC120-160
Issue 1
0
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
Mean forward current (A) (Whole cycle averaged)
Mean forward current (A) (Whole cycle averaged)
Figure 15 – On-state current vs. Power dissipation – Figure 16 – On-state current vs. Heatsink
Single Side Cooled (Square wave)
temperature - Single Side Cooled (Square wave)
150
125
100
75
3000
N2500VC120-160
Issue 1
2500
2000
1500
1000
500
d.c.
270°
180°
120°
90°
30°
60°
90°
120°
180°
270°
d.c.
60°
30°
50
25
N2500VC120-160
Issue 1
0
0
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
Mean Forward Current (Amps) (Whole Cycle Averaged)
Mean Forward Current (Amps) (Whole Cycle Averaged)
Data Sheet. Types N2500VC120 to N2500VC160 Issue 1.
Page 8 of 10
November, 2001
WESTCODE Positive development in power electronics
N2500VC120 to N2500VC160
Figure 17 – Maximum surge and I2t Ratings
1000000
1.00E+08
N2500VC120-160
I2t: VRRM ≤10V
Issue 1
Tj (initial) = 125°C
I2t: 60% VRRM
100000
1.00E+07
ITSM: VRRM ≤10V
ITSM: 60% VRRM
10
10000
1.00E+06
1
3
5
10
1
5
50 100
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Data Sheet. Types N2500VC120 to N2500VC160 Issue 1.
Page 9 of 10
November, 2001
WESTCODE Positive development in power electronics
N2500VC120 to N2500VC160
Outline Drawing & Ordering Information
ORDERING INFORMATION
(Please quote 10 digit code as below)
N2500
VC
0
♦ ♦
Fixed
Type Code
Fixed
Outline Code
Voltage Code
12-16
Fixed turn-off
time code
Typical order code: N2500VC120 – 1200V VDRM/VRRM, 34mm clamp height capsule.
UK: Westcode Semiconductors Ltd.
P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL.
Tel: +44 (0) 1249 444524 Fax: +44 (0) 1249 659448
E-Mail: WSL.sales@westcode.com
WESTCODE
USA: Westcode Semiconductors Inc.
3270 Cherry Avenue, Long Beach, California 90807
Tel: +1 (562) 595 6971 Fax: +1 (562) 595 8182
E-Mail: WSI.sales@westcode.com
Internet: http://www.westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
© Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to
the conditions and limits contained in this report.
Data Sheet. Types N2500VC120 to N2500VC160 Issue 1.
Page 10 of 10
November, 2001
相关型号:
N2503TC450-520
Silicon Controlled Rectifier, 4880A I(T)RMS, 5200V V(DRM), 5200V V(RRM), 1 Element
IXYS
N250AB1-16.999MHZ-T
Parallel - Fundamental Quartz Crystal, 16.999MHz Nom, RESISTANCE WELDED PACKAGE-4
MMD
©2020 ICPDF网 联系我们和版权申明