R0830LS12G [IXYS]

Silicon Controlled Rectifier, 1713A I(T)RMS, 1318000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, 101A336, 3 PIN;
R0830LS12G
型号: R0830LS12G
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Silicon Controlled Rectifier, 1713A I(T)RMS, 1318000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, 101A336, 3 PIN

栅 栅极
文件: 总12页 (文件大小:232K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Date:- 2 Apr, 2001  
Data Sheet Issue:- 1  
WESTCODE  
Distributed Gate Thyristor  
Types R0830LS12x to R0830LS14x  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
1200-1400  
V
V
V
V
1200-1400  
1200-1400  
1300-1500  
MAXIMUM  
LIMITS  
830  
OTHER RATINGS  
UNITS  
IT(AV)  
IT(AV)  
IT(AV)  
IT(RMS)  
IT(d.c.)  
ITSM  
ITSM2  
I2t  
Mean on-state current, Tsink=55°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 3)  
Nominal RMS on-state current, Tsink=25°C, (note 2)  
D.C. on-state current, Tsink=25°C, (note 4)  
A
A
528  
289  
A
1713  
A
1318  
A
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)  
8500  
A
9350  
A
Peak non-repetitive surge tp=10ms, VRM 10V, (note 5)  
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)  
I2t capacity for fusing tp=10ms, VRM 10V, (note 5)  
361×103  
437×103  
1000  
A2s  
A2s  
A/µs  
A/µs  
V
I2t  
Maximum rate of rise of on-state current (repetitive), (Note 6)  
Maximum rate of rise of on-state current (non-repetitive), (Note 6)  
Peak reverse gate voltage  
diT/dt  
1500  
VRGM  
PG(AV)  
PGM  
VGD  
5
Mean forward gate power  
2
W
Peak forward gate power  
30  
W
Non-trigger gate voltage, (Note 7)  
Operating temperature range  
0.25  
V
THS  
-40 to +125  
-40 to +150  
°C  
°C  
Tstg  
Storage temperature range  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, IFG=2A, tr 0.5µs, Tcase=125°C.  
7) Rated VDRM  
.
Data Sheet. Types R0830LS12x to R0830LS14x Issue 1  
Page 1 of 12  
April, 2001  
WESTCODE Positive development in power electronics  
R0830LS12x to R0830LS14x  
Characteristics  
PARAMETER  
MIN.  
TYP. MAX. TEST CONDITIONS  
UNITS  
(Note 1)  
VTM  
V0  
Maximum peak on-state voltage  
Threshold voltage  
-
-
2.4  
1.9  
0.357  
-
ITM=1400A  
V
V
-
-
-
rs  
Slope resistance  
-
m
dv/dt  
IDRM  
IRRM  
VGT  
IGT  
IH  
Critical rate of rise of off-state voltage  
Peak off-state current  
Peak reverse current  
Gate trigger voltage  
200  
-
VD=80% VDRM, linear ramp  
Rated VDRM  
µ
V/ s  
-
-
-
-
-
-
-
-
-
-
-
-
70  
mA  
mA  
V
-
70  
Rated VRRM  
-
3.0  
300  
Tj=25°C  
VD=10V, IT=3A  
Gate trigger current  
-
mA  
mA  
Holding current  
-
1000 Tj=25°C  
1.0  
tgt  
Gate-controlled turn-on delay time  
Turn-on time  
0.4  
0.8  
285  
110  
95  
2.7  
VD=67% VDRM, IT=1500A, di/dt=60A/µs,  
I
FG=2A, tr=0.5µs, Tj=25°C  
tgd  
2.0  
Qrr  
Qra  
Irr  
Recovered charge  
-
µC  
µC  
A
Recovered charge, 50% Chord  
Reverse recovery current  
Reverse recovery time  
130  
I
TM=1000A, tp=1000µs, di/dt=60A/µs,  
Vr=50V  
-
-
trr  
µs  
I
TM=1000A, tp=1000µs, di/dt=60A/µs,  
-
-
-
30  
35  
Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs  
ITM=1000A, tp=1000µs, di/dt=60A/µs,  
Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs  
tq  
Turn-off time (note 2)  
µs  
25  
-
-
-
0.032 Double side cooled  
K/W  
K/W  
kN  
Rth(j-hs) Thermal resistance, junction to heatsink  
-
-
0.064 Single side cooled  
F
Mounting force  
Weight  
10  
-
20  
-
Wt  
340  
g
Notes:-  
1) Unless otherwise indicated Tj=125°C.  
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information  
for details of tq codes.  
Data Sheet. Types R0830LS12x to R0830LS14x Issue 1  
Page 2 of 12  
April, 2001  
WESTCODE Positive development in power electronics  
Notes on Ratings and Characteristics  
1.0 Voltage Grade Table  
R0830LS12x to R0830LS14x  
V
DRM VDSM VRRM  
VRSM  
V
1300  
1500  
VD VR  
DC V  
810  
Voltage Grade  
V
1200  
1400  
12  
14  
930  
2.0 Extension of Voltage Grades  
This report is applicable to other and higher voltage grades when supply has been agreed by  
Sales/Production.  
3.0 Extension of Turn-off Time  
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by  
Sales/Production.  
4.0 Repetitive dv/dt  
Higher dv/dt selections are available up to 1000V/µs on request.  
5.0 De-rating Factor  
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.  
6.0 Rate of rise of on-state current  
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during  
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not  
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the  
total device current including that from any local snubber network.  
7.0 Square wave ratings  
These ratings are given for load component rate of rise of forward current of 100 and 500A/µs.  
8.0 Duty cycle lines  
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as  
parallel to the first.  
9.0 Maximum Operating Frequency  
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off  
(tq) and for the off-state voltage to reach full value (tv), i.e.  
1
max =  
f
tpulse +tq +tv  
Data Sheet. Types R0830LS12x to R0830LS14x Issue 1  
Page 3 of 12  
April, 2001  
WESTCODE Positive development in power electronics  
R0830LS12x to R0830LS14x  
10.0 On-State Energy per Pulse Characteristics  
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by  
the frequency ratings.  
Let Ep be the Energy per pulse for a given current and pulse width, in joules  
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)  
and TSINK be the heat sink temperature.  
Then the average dissipation will be:  
=
=
(
)
WAV EP f and TSINK (max.) 125 WAV Rth  
(
J Hs  
)
11.0 Reverse recovery ratings  
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.  
Fig. 1  
µ
(ii) Qrr is based on a 150 s integration time.  
150µs  
Qrr = irr .dt  
i.e.  
0
t1  
K Factor =  
(iii)  
t2  
12.0 Reverse Recovery Loss  
12.1 Determination by Measurement  
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and  
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be  
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can  
then be evaluated from:  
=
(
+
)
TSINK (new) TSINK (original) E k f Rth  
(
J Hs  
)
where k = 0.227 (°C/W)/s  
E = Area under reverse loss waveform per pulse in joules (W.s.)  
f = rated frequency Hz at the original heat sink temperature.  
Rth(J-Hs) = d.c. thermal resistance (°C/W).  
Data Sheet. Types R0830LS12x to R0830LS14x Issue 1  
Page 4 of 12  
April, 2001  
WESTCODE Positive development in power electronics  
R0830LS12x to R0830LS14x  
The total dissipation is now given by:  
=
+
E f  
W(TOT) W(original)  
12.2 Determination without Measurement  
In circumstances where it is not possible to measure voltage and current conditions, or for design  
purposes, the additional losses E in joules may be estimated as follows.  
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).  
Let f be the operating frequency in Hz  
TSINK  
=
TSINK  
E Rth f  
(
)
(
new  
)
(
original  
)
Where TSINK (new) is the required maximum heat sink temperature and  
TSINK (original) is the heat sink temperature given with the frequency ratings.  
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage  
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than  
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value  
obtained from the curves.  
NOTE 1  
- Reverse Recovery Loss by Measurement  
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring  
the charge care must be taken to ensure that:  
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high  
amplitude forward current.  
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope  
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal  
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically  
damped snubber, connected across diode anode to cathode. The formula used for the calculation  
of this snubber is shown below:  
Vr  
R2 = 4  
di  
CS  
dt  
Where: Vr = Commutating source voltage  
CS = Snubber capacitance  
R
= Snubber resistance  
13.0 Gate Drive  
The recommended pulse gate drive is 30V, 15 with a short-circuit current rise time of not more than  
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.  
The duration of pulse may need to be configured with respect to the application but should be no shorter  
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in  
charge to trigger.  
Data Sheet. Types R0830LS12x to R0830LS14x Issue 1  
Page 5 of 12  
April, 2001  
WESTCODE Positive development in power electronics  
R0830LS12x to R0830LS14x  
14.0 Computer Modelling Parameters  
14.1 Calculating VT using ABCD Coefficients  
The on-state characteristic IT vs VT, on page 7 is represented in two ways;  
(i)  
the well established Vo and rs tangent used for rating purposes and  
(ii)  
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in  
terms of IT given below:  
= +  
( )  
+
+
VT A B ln IT C IT D IT  
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics  
where possible. The resulting values for VT agree with the true device characteristic over a current range,  
which is limited to that plotted.  
125°C Coefficients  
A
B
C
D
2.41395901  
-0.2538009  
0.00022821  
0.04022639  
14.2 D.C. Thermal Impedance Calculation  
t
=
p n  
r = r 1eτ  
p
t
p
=
p 1  
Where p = 1 to n, n is the number of terms in the series.  
t = Duration of heating pulse in seconds.  
rt = Thermal resistance at time t.  
rp = Amplitude of pth term.  
τp  
= Time Constant of rth term.  
D.C. Double Side Cooled  
Term  
1
2
3
4
0.01771901  
0.7085781  
4.240625×10-3  
6.963806×10-3  
3.043661×10-3  
2.130842×10-3  
rp  
0.1435833  
0.03615196  
τp  
D.C. Single Side Cooled  
Term  
rp  
1
2
3
4
5
0.03947164  
4.090062  
0.01022837  
1.078983  
8.789912×10-3  
4.235162×10-3  
1.907609×10-3  
1.240861×10-3  
0.08530917  
0.01128791  
τp  
Data Sheet. Types R0830LS12x to R0830LS14x Issue 1  
Page 6 of 12  
April, 2001  
WESTCODE Positive development in power electronics  
R0830LS12x to R0830LS14x  
Curves  
Figure 1 - On-state characteristics of Limit device  
Figure 2 - Transient thermal impedance  
10000  
0.1  
SSC 0.064K/W  
Tj = 125°C  
DSC 0.032K/W  
0.01  
1000  
0.001  
0.0001  
R0830LS12x-14x  
Issue 1  
R0830LS12x-14x  
Issue 1  
100  
0.00001  
0.0001 0.001  
0
1
2
3
4
5
0.01  
0.1  
1
10  
100  
Instantaneous on-state voltage - VT (V)  
Time (s)  
Figure 3 - Gate characteristics - Trigger limits  
Figure 4 - Gate characteristics - Power curves  
20  
6
R0830LS12x-14x  
R0830LS12x-14x  
Issue 1  
Issue 1  
Tj=25°C  
Tj=25°C  
18  
5
16  
14  
Max VG dc  
4
Max VG dc  
12  
10  
8
IGT, VGT  
3
2
1
PG Max 30W dc  
6
4
PG 2W dc  
2
IGD, VGD  
Min VG dc  
Min VG dc  
0
0
0
2
4
6
8
10  
0
0.2  
0.4  
0.6  
0.8  
1
Gate Trigger Current - IGT (A)  
Gate Trigger Current - IGT (A)  
Data Sheet. Types R0830LS12x to R0830LS14x Issue 1  
Page 7 of 12  
April, 2001  
WESTCODE Positive development in power electronics  
R0830LS12x to R0830LS14x  
Figure 5 - Total recovered charge, Qrr  
Figure 6 - Recovered charge, Qra (50% chord)  
1000  
100  
10  
1000  
2000A  
1500A  
1000A  
2000A  
1500A  
1000A  
500A  
500A  
Tj = 125°C  
Tj = 125°C  
R0830LS12x-14x  
Issue 1  
R0830LS12x-14x  
Issue 1  
100  
10  
100  
Commutation rate - di/dt (A/µs)  
1000  
10  
100  
Commutation rate - di/dt (A/µs)  
1000  
Figure 7 - Peak reverse recovery current, Irm  
Figure 8 - Maximum recovery time, trr (50% chord)  
10  
1000  
2000A  
1500A  
1000A  
500A  
100  
2000A  
1500A  
1000A  
500A  
Tj = 125°C  
Tj = 125°C  
R0830LS12x-14x  
Issue 1  
R0830LS12x-14x  
Issue 1  
1
10  
10  
100  
1000  
10  
100  
Commutation rate - di/dt (A/µs)  
1000  
Commutation rate - di/dt (A/µs)  
Data Sheet. Types R0830LS12x to R0830LS14x Issue 1  
Page 8 of 12  
April, 2001  
WESTCODE Positive development in power electronics  
R0830LS12x to R0830LS14x  
Figure 9 - Reverse recovery energy per pulse  
Figure 10 - Sine wave energy per pulse  
1.00E+02  
1.00E+01  
1.00E+00  
1.00E-01  
1.00E-02  
1000  
R0830LS12x-14x  
Issue 1  
Tj=125°C  
4kA  
2000A  
1500A  
1000A  
100  
2kA  
500A  
1.5kA  
1kA  
500A  
Snubber  
0.1µF, 10  
Tj = 125°C  
Vrm = 67% VRRM  
R0830LS12x-14x  
Issue 1  
10  
1.00E-05  
1.00E-04  
1.00E-03  
1.00E-02  
10  
100  
Commutation rate - di/dt (A/µs)  
1000  
Pulse width (s)  
Figure 11 - Sine wave frequency ratings  
Figure 12 - Sine wave frequency ratings  
1.00E+05  
1.00E+05  
R0830LS12x-14x  
Issue 1  
THs=55°C  
100% Duty Cycle  
500A  
500A  
1kA  
100% Duty Cycle  
1.00E+04  
1kA  
1.00E+04  
1.00E+03  
1.00E+02  
1.00E+01  
1.5kA  
1.5kA  
2kA  
2kA  
1.00E+03  
4kA  
4kA  
1.00E+02  
1.00E+01  
THs=85°C  
R0830LS12x-14x  
Issue 1  
1.00E+00  
1.00E-05  
1.00E-04  
1.00E-03  
1.00E-02  
1.00E-05  
1.00E-04  
1.00E-03  
1.00E-02  
Pulse Width (s)  
Pulse width (s)  
Data Sheet. Types R0830LS12x to R0830LS14x Issue 1  
Page 9 of 12  
April, 2001  
WESTCODE Positive development in power electronics  
R0830LS12x to R0830LS14x  
Figure 13 - Square wave frequency ratings  
Figure 14 - Square wave frequency ratings  
1.00E+05  
1.00E+05  
1.00E+04  
1.00E+03  
1.00E+02  
1.00E+01  
500A  
100% Duty Cycle  
1kA  
1.00E+04  
100% Duty Cycle  
500A  
1kA  
1.5kA  
2kA  
1.5kA  
2kA  
1.00E+03  
4kA  
4kA  
1.00E+02  
1.00E+01  
THs=55°C  
THs=85°C  
di/dt=100A/µs  
di/dt=100A/µs  
R0830LS12x-14x  
Issue 1  
R0830LS12x-14x  
Issue 1  
1.00E+00  
1.00E-05  
1.00E-04  
1.00E-03  
1.00E-02  
1.00E-05  
1.00E-04  
1.00E-03  
1.00E-02  
Pulse width (s)  
Pulse width (s)  
Figure 15 - Square wave frequency ratings  
Figure 16 - Square wave frequency ratings  
1.00E+05  
1.00E+05  
500A  
500A  
100% Duty Cycle  
100% Duty Cycle  
1.00E+04  
1.00E+03  
1.00E+02  
1.00E+01  
1.00E+00  
1.00E+04  
1kA  
1kA  
1.5kA  
1.5kA  
2kA  
4kA  
2kA  
1.00E+03  
1.00E+02  
4kA  
1.00E+01  
THs=85°C  
THs=55°C  
di/dt=500A/µs  
di/dt=500A/µs  
R0830LS12x-14x  
Issue 1  
R0830LS12x-14x  
Issue 1  
1.00E+00  
1.00E-05  
1.00E-04  
1.00E-03  
1.00E-02  
1.00E-05  
1.00E-04  
1.00E-03  
1.00E-02  
Pulse width (s)  
Pulse width (s)  
Data Sheet. Types R0830LS12x to R0830LS14x Issue 1  
Page 10 of 12  
April, 2001  
WESTCODE Positive development in power electronics  
R0830LS12x to R0830LS14x  
Figure 17 - Square wave energy per pulse  
Figure 18 - Square wave energy per pulse  
1.00E+03  
1.00E+03  
1.00E+02  
1.00E+01  
1.00E+00  
1.00E-01  
1.00E-02  
R0830LS12x-14x  
Issue 1  
R0830LS12x-14x  
Issue 1  
di/dt=100A/µs  
Tj=125°C  
di/dt=500A/µs  
Tj=125°C  
1.00E+02  
4kA  
2kA  
1.00E+01  
4kA  
1.00E+00  
2kA  
1.5kA  
1kA  
500A  
1.5kA  
1kA  
1.00E-01  
500A  
1.00E-02  
1.00E-05  
1.00E-04  
1.00E-03  
1.00E-02  
1.00E-05  
1.00E-04  
1.00E-03  
1.00E-02  
Pulse width (s)  
Pulse width (s)  
Figure 19 - Maximum surge and I2t Ratings  
Gate may temporarily lose control of conduction angle  
100000  
10000  
1000  
1.00E+07  
R0830LS12x-14x  
Issue 1  
Tj (initial) = 125°C  
I2t: VRRM10V  
I2t: 60% VRRM  
1.00E+06  
ITSM: VRRM10V  
ITSM: 60% VRRM  
1.00E+05  
1
3
5
10  
1
5
10  
50 100  
Duration of surge (ms)  
Duration of surge (cycles @ 50Hz)  
Data Sheet. Types R0830LS12x to R0830LS14x Issue 1  
Page 11 of 12  
April, 2001  
WESTCODE Positive development in power electronics  
R0830LS12x to R0830LS14x  
Outline Drawing & Ordering Information  
ORDERING INFORMATION  
(Please quote 11 or 12 digit code as below)  
R0830  
LS  
♦ ♦  
Fixed  
Type Code  
Fixed  
Outline Code  
Off-state Voltage Code  
VDRM/100  
tq Code  
E=25µs, F=30µs, G=35µs  
12-14  
Typical order code: R0830LS14G – 1400V VDRM, 35µs tq, 27.7mm clamp height capsule.  
UK: Westcode Semiconductors Ltd.  
P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL.  
Tel: +44 (0) 1249 444524 Fax: +44 (0) 1249 659448  
E-Mail: WSL.sales@westcode.com  
WESTCODE  
USA: Westcode Semiconductors Inc.  
3270 Cherry Avenue, Long Beach, California 90807  
Tel: 562 595 6971 Fax: 562 595 8182  
Internet: http://www.westcode.com  
E-Mail: WSI.sales@westcode.com  
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed  
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.  
© Westcode Semiconductors Ltd.  
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.  
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the  
conditions and limits contained in this report.  
Data Sheet. Types R0830LS12x to R0830LS14x Issue 1  
Page 12 of 12  
April, 2001  

相关型号:

R0830LS14E

Silicon Controlled Rectifier, 1713A I(T)RMS, 1318000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, 101A336, 3 PIN
IXYS

R0830LS14F

Silicon Controlled Rectifier, 1713A I(T)RMS, 1318000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, 101A336, 3 PIN
IXYS

R0830LS14G

Silicon Controlled Rectifier, 1713 A, 1400 V, SCR, 101A336, 3 PIN
IXYS

R0843

5200 Series - Hash Choke
BOURNS

R0861

REED RELAY / 1 CHANGE OVER MERCURY CONTACT
CELDUC

R0861P12

REED RELAY / 1 CHANGE OVER MERCURY CONTACT
CELDUC

R0866P06

REED RELAY / 2 CHANGE OVER MERCURY CONTACTS
CELDUC

R0866P15

REED RELAY / 2 CHANGE OVER MERCURY CONTACTS
CELDUC

R0878LS16K

Silicon Controlled Rectifier, 1765 A, 1600 V, ASSYMETRIC SCR
IXYS

R0878LS16L

Assymetric SCR, 1765A I(T)RMS, 1456000mA I(T), 1600V V(DRM), 1300V V(RRM), 1 Element
IXYS

R0878LS16M

Assymetric SCR, 1765A I(T)RMS, 1456000mA I(T), 1600V V(DRM), 1300V V(RRM), 1 Element
IXYS

R0878LS18L

Assymetric SCR, 1765A I(T)RMS, 1456000mA I(T), 1800V V(DRM), 1500V V(RRM), 1 Element
IXYS