R295CH36D2G6 [IXYS]
Silicon Controlled Rectifier, 1755A I(T)RMS, 3600V V(DRM), 2160V V(RRM), 1 Element, 101A223, 3 PIN;
| 型号： | R295CH36D2G6 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Silicon Controlled Rectifier, 1755A I(T)RMS, 3600V V(DRM), 2160V V(RRM), 1 Element, 101A223, 3 PIN 栅 栅极 |
| 文件： | 总15页 (文件大小：297K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EVALUATION LABORATORY
Rating Report
Origin
Date
- Issue 1
- 30 August, 2000
- 15
Total Pages
- PAR 327
Provisional Data
Distributed Gate Thyristor
Types R295CH36 to R295CH40
Author
Checked
Approved
N. Tarling
Abstract
The R295CH36-40 Distributed Gate thyristor range features regenerative and interdigitated gating on a
50mm diameter, silicon slice (manufacturing reference RSTACH) mounted in a cold weld capsule. Low
turn-on losses make it suitable for chopper, inverter and pulse applications.
Summary of changes to previous issue.
Issue 1
First issue - Advance data.
The information contained herein is confidential and is protected by Copyright. The information may not be
used or disclosed except with the written permission of and in the manner permitted by the proprietors
Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time
without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not
necessarily subject to the conditions and limits contained in this report.
Provisional Data. Types R295CH36 to R295CH40 Issue 1
Page i
August, 2000
Contents
Abstract.........................................................................................................................................................i
Contents.......................................................................................................................................................ii
Introduction .................................................................................................................................................ii
Absolute Maximum Ratings.......................................................................................................................1
Characteristics ............................................................................................................................................2
Notes on Ratings and Characteristics......................................................................................................3
1.0 Voltage Grade Table ...........................................................................................................................3
2.0 Extension of Voltage Grades...............................................................................................................3
3.0 Extension of Turn-off Time..................................................................................................................3
4.0 Repetitive dv/dt....................................................................................................................................3
5.0 De-rating Factor...................................................................................................................................3
6.0 Rate of rise of on-state current............................................................................................................3
7.0 Square wave ratings............................................................................................................................3
8.0 Duty cycle lines....................................................................................................................................3
9.0 Maximum Operating Frequency..........................................................................................................3
10.0 On-State Energy per Pulse Characteristics.......................................................................................4
11.0 Reverse recovery ratings...................................................................................................................4
12.0 Reverse Recovery Loss ....................................................................................................................4
12.1 Determination by Measurement....................................................................................................................................... 4
12.2 Determination without Measurement ............................................................................................................................... 5
NOTE 1
- Reverse Recovery Loss by Measurement .................................................................................5
13.0 Gate Drive .........................................................................................................................................5
14.0 Computer Modelling Parameters.......................................................................................................6
14.1 Calculating VT using ABCD Coefficients .......................................................................................................................... 6
14.2 D.C. Thermal Impedance Calculation .............................................................................................................................. 6
14.3 Recovery parameter estimation ....................................................................................................................................... 7
Curves..........................................................................................................................................................8
Figure 1 - On-state characteristics of Limit device ....................................................................................8
Figure 2 - Transient thermal impedance ...................................................................................................8
Figure 3 - Gate characteristics - Trigger limits ..........................................................................................8
Figure 4 - Gate characteristics - Power curves .........................................................................................8
Figure 5 - Total recovered charge, Qrr.......................................................................................................9
Figure 6 - Recovered charge, Qra (50% chord) .........................................................................................9
Figure 7 - Peak reverse recovery current, Irm ............................................................................................9
Figure 8 - Maximum recovery time, trr (50% chord)...................................................................................9
Figure 9 - Reverse recovery energy per pulse ........................................................................................10
Figure 10 - Sine wave energy per pulse..................................................................................................10
Figure 11 - Sine wave frequency ratings, 55°C heatsink.........................................................................10
Figure 12 - Sine wave frequency ratings, 85°C heatsink.........................................................................10
Figure 13 - Square wave frequency ratings, 55°C heatsink, 100A/µs.....................................................11
Figure 14 - Square wave frequency ratings, 55°C heatsink, 500A/µs.....................................................11
Figure 15 - Square wave frequency ratings, 85°C heatsink, 100A/µs.....................................................11
Figure 16 - Square wave frequency ratings, 85°C heatsink, 500A/µs.....................................................11
Figure 17 - Square wave energy per pulse, 100A/µs ..............................................................................12
Figure 18 - Square wave energy per pulse, 500A/µs ..............................................................................12
Figure 19 - Maximum surge and I2t Ratings............................................................................................12
Outline Drawing & Ordering Information................................................................................................13
Introduction
The R295 series of Distributed Gate thyristors have fast switching characteristics provided by a
regenerative, interdigitated gate. They also exhibit low switching losses. They are therefore suitable for
medium current, medium frequency applications.
Provisional Data. Types R295CH36 to R295CH40 Issue 1
Page ii
August, 2000
Date:- 30 Aug, 2000
Data Sheet Issue:- 1
WESTCODE
Provisional Data
Distributed Gate Thyristor
Types R295CH36 to R295CH40
Absolute Maximum Ratings
MAXIMUM
LIMITS
VOLTAGE RATINGS
UNITS
VDRM
VDSM
VRRM
VRSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
3600-4000
3600-4000
3600-4000
3700-4100
V
V
V
V
MAXIMUM
LIMITS
890
OTHER RATINGS
UNITS
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
A
A
610
365
A
1755
A
1525
A
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
10.9
kA
kA
A2s
A2s
A/µs
A/µs
V
≤
12
Peak non-repetitive surge tp=10ms, VRM 10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
5.94×105
7.20×105
1000
I2t
≤
I2t capacity for fusing tp=10ms, VRM 10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
diT/dt
1500
VRGM
PG(AV)
PGM
VGD
5
Mean forward gate power
2
W
Peak forward gate power
30
W
Non-trigger gate voltage, (Note 7)
Operating temperature range
0.25
V
THS
-40 to +125
-40 to +150
°C
°C
Tstg
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
≤
6) VD=67% VDRM, IFG=2A, tr 0.5µs, Tcase=125°C.
7) Rated VDRM
.
Provisional Data Sheet. Types R295CH36 to R295CH40 Issue 1
Page 1 of 13
August, 2000
WESTCODE Positive development in power electronics
R295CH36 to R295CH40
Characteristics
PARAMETER
MIN.
TYP. MAX. TEST CONDITIONS
UNITS
(Note 1)
VTM
V0
Maximum peak on-state voltage
Threshold voltage
-
-
-
-
-
-
2.98 ITM=1830A
V
V
1.516
0.8
rS
Slope resistance
Ω
m
Critical rate of rise of off-state
voltage
dv/dt
-
-
200 VD=80% VDRM
µ
V/ s
IDRM
IRRM
VGT
IGT
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
-
-
-
-
-
-
-
-
-
-
100 Rated VDRM
100 Rated VRRM
mA
mA
V
3.0
Tj=25°C
300 Tj=25°C
1000 Tj=25°C
VD=10V, IT=3A
mA
mA
IH
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V
Qra
Recovered charge, 50% Chord
-
-
-
1750
-
µC
I
TM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs
TM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs
-
-
350
550
tq
Turn-off time
µs
I
-
-
-
0.024 Double side cooled
K/W
K/W
kN
Thermal resistance, junction to
heatsink
R
θ
-
-
0.049 Single side cooled
F
Mounting force
Weight
19
-
26
-
Wt
510
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
Provisional Data Sheet. Types R295CH36 to R295CH40 Issue 1
Page 2 of 13
August, 2000
WESTCODE Positive development in power electronics
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
R295CH36 to R295CH40
V
DRM VDSM VRRM
VRSM
V
3700
3900
4100
VD VR
DC V
1900
1960
2000
Voltage Grade 'H'
V
36
38
40
3600
3800
4000
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25oC.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
1
max =
f
tpulse +tq +tv
Provisional Data Sheet. Types R295CH36 to R295CH40 Issue 1
Page 3 of 13
August, 2000
WESTCODE Positive development in power electronics
R295CH36 to R295CH40
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
=
=
−
WAV EP f and TSINK (max.) 125 WAV Rth
(
J −Hs
)
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
Fig. 1
µ
(ii) Qrr is based on a 150 s integration time.
150µs
Qrr = irr .dt
∫
i.e.
0
t1
K Factor =
(iii)
t2
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
=
−
+
TSINK (new) TSINK (original) E k f Rth
(
J −Hs
)
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
Provisional Data Sheet. Types R295CH36 to R295CH40 Issue 1
Page 4 of 13
August, 2000
WESTCODE Positive development in power electronics
R295CH36 to R295CH40
The total dissipation is now given by:
=
+
E f
W(TOT) W(original)
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
TSINK
=
TSINK
−
E Rth f
(
)
(
new
)
(
original
)
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1
- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
Vr
R2 = 4
di
CS
dt
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R
= Snubber resistance
13.0 Gate Drive
Ω
The recommended pulse gate drive is 20V, 10 with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.
Provisional Data Sheet. Types R295CH36 to R295CH40 Issue 1
Page 5 of 13
August, 2000
WESTCODE Positive development in power electronics
R295CH36 to R295CH40
14.0 Computer Modelling Parameters
14.1 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs VT, on page 8 is represented in two ways;
(i)
the well established Vo and rs tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
= +
( )
+
+
VT A B ln IT C IT D IT
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for VT agree with the true device characteristic over a current range,
which is limited to that plotted.
25°C Coefficients
125°C Coefficients
A
B
C
D
0.78163983
0.4140327
1.11101×10-3
A
B
C
D
0.66032723
0.169496
8.46556×10-4
-0.0744794
-0.01175336
14.2 D.C. Thermal Impedance Calculation
−
t
=
p n
r = r 1− eτ
p
∑
t
p
=
p 1
Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
rt = Thermal resistance at time t.
rp = Amplitude of pth term.
τp
= Time Constant of rth term.
D.C. Double Side Cooled
3
Term
rp
1
2
4
5
0.01249139
0.8840810
6.316833×10-3
1.850855×10-3
1.922045×10-3
6.742908×10-3
6.135330×10-4
1.326292×10-3
0.1215195
0.03400152
τp
D.C. Single Side Cooled
3
4.863568×10-3 3.744798×10-3 6.818034×10-3 2.183558×10-3 1.848294×10-3
Term
rp
1
2
4
5
6
0.02919832
6.298105
3.286174
0.5359179
0.1186897
0.02404574
3.379476×10-3
τp
Provisional Data Sheet. Types R295CH36 to R295CH40 Issue 1
Page 6 of 13
August, 2000
WESTCODE Positive development in power electronics
R295CH36 to R295CH40
14.3 Recovery parameter estimation
Maximum recovery parameters may be calculated, using the polynomial expression:
p
= −
p n 1
dir
y =
k
∑
p
dt
=
p 0
Where: y = recovery parameter (Qrr, Qra, Irm or trr)
kp = coefficient found in the relevant table below,
n
p
= number of terms in the series,
= term number
Total Recovered Charge Qrr (Valid di/dt range 20 to 300A/µs)
Values of kp for Qrr
p
4
3
2
1
0
500A
1000A
1500A
2000A
-2.0622543×10-6
1.4286832×10-3
-0.352415992
41.76920981
-2.2056631×10-6
1.5443881×10-3
-0.390738814
50.80017722
4241.086994
-2.5054023×10-6
1.7568941×10-3
-0.446128035
58.83394938
4225.007007
-2.7222087×10-6
1.9106921×10-3
-0.486278552
64.70561695
4267.417972
3767.685746
Recovered Charge Qra, 50% chord (Valid di/dt range 20 to 300A/µs)
Values of kp for Qra
p
4
3
2
1
0
500A
1000A
1500A
2000A
-2.8548228×10-7
1.9844700×10-4
-0.0493
-5.4336440×10-7
3.7871571×10-4
-0.0948
-6.5759392×10-7
4.5884236×10-4
-0.115
-7.3964074×10-7
5.1648591×10-4
-0.130
6.013771819
1720.160363
11.81697719
1835.232091
14.49737795
1876.536965
16.46104931
1907.690427
Peak reverse recovery current Irm (Valid di/dt range 20 to 300A/µs)
Values of kp for Irm
p
4
3
2
1
0
500A
1000A
1500A
-1.9181885×10-7
1.3810326×10-4
-0.0375
2000A
-1.7436083×10-7
1.2531187×10-4
-0.0339
-1.8578581×10-7
1.3362400×10-4
-0.0362
-2.0016520×10-7
1.4418151×10-4
-0.0392
6.002345656
98.05266242
6.487724072
102.396008
6.83017228
102.971631
7.19419231
106.1485226
Reverse recovery time trr (Valid di/dt range 20 to 300A/µs)
Values of kp for trr
p
4
3
2
1
0
500A
1000A
1500A
2000A
5.0893276×10-8
-3.4239776×10-5
7.8901089×10-3
-0.75674596
5.0175080×10-8
-3.3792700×10-5
7.8210744×10-3
-0.76019049
5.8624593×10-8
-3.9360860×10-5
9.0548017×10-3
-0.868500043
41.0544367
6.0553218×10-8
-4.0785063×10-5
9.4325203×10-3
-0.913103681
44.07751035
35.01468618
36.93828257
Provisional Data Sheet. Types R295CH36 to R295CH40 Issue 1
Page 7 of 13
August, 2000
WESTCODE Positive development in power electronics
R295CH36 to R295CH40
Curves
Figure 1 - On-state characteristics of Limit device
Figure 2 - Transient thermal impedance
10000
0.1
SSC 0.049K/W
Tj = 25°C
Tj = 125°C
DSC 0.024K/W
0.01
1000
0.001
0.0001
R295CH36-40
Issue 1
R295CH36-40
Issue 1
100
0.00001
0.0001
0
2
4
6
8
10
0.001
0.01
0.1
1
10
100
Instantaneous on-state voltage - VT (V)
Time (s)
Figure 3 - Gate characteristics - Trigger limits
Figure 4 - Gate characteristics - Power curves
20
6
R295CH36-40
R295CH36-40
Issue 1
Issue 1
Tj=25°C
Tj=25°C
18
5
16
14
Max VG dc
4
Max VG dc
12
10
8
IGT, VGT
3
PG Max 30W dc
2
1
6
4
PG 2W dc
2
IGD, VGD
Min VG dc
Min VG dc
0
0
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
Provisional Data Sheet. Types R295CH36 to R295CH40 Issue 1
Page 8 of 13
August, 2000
WESTCODE Positive development in power electronics
R295CH36 to R295CH40
Figure 5 - Total recovered charge, Qrr
Figure 6 - Recovered charge, Qra (50% chord)
10000
10000
2000A
1500A
1000A
500A
2000A
1500A
1000A
500A
Tj = 125°C
Tj = 125°C
R295CH36-40
Issue 1
R295CH36-40
Issue 1
1000
1000
10
100
Commutation rate - di/dt (A/µs)
1000
10
100
Commutation rate - di/dt (A/µs)
1000
Figure 7 - Peak reverse recovery current, Irm
Figure 8 - Maximum recovery time, trr (50% chord)
100
10000
2000A
10
1500A
1000A
500A
1000
2000A
1500A
1000A
500A
Tj = 125°C
Tj = 125°C
R295CH36-40
Issue 1
R295CH36-40
Issue 1
1
100
10
100
1000
10
100
Commutation rate - di/dt (A/µs)
1000
Commutation rate - di/dt (A/µs)
Provisional Data Sheet. Types R295CH36 to R295CH40 Issue 1
Page 9 of 13
August, 2000
WESTCODE Positive development in power electronics
R295CH36 to R295CH40
Figure 9 - Reverse recovery energy per pulse
Figure 10 - Sine wave energy per pulse
1.00E+03
1.00E+02
1.00E+01
1.00E+00
1.00E-01
1.00E-02
100
R295CH36-40
Issue 1
Tj=125°C
5kA
3kA
10
2kA
2000A
1500A
1000A
500A
1.5kA
1kA
Measured
without
snubber
500A
Tj = 125°C
Vr = 1000V
R295CH36-40
Issue 1
1
1.00E-05
1.00E-04
1.00E-03
1.00E-02
10
100
1000
Pulse width (s)
Commutation rate - di/dt (A/µs)
Figure 11 - Sine wave frequency ratings
Figure 12 - Sine wave frequency ratings
1.00E+05
1.00E+05
R295CH36-40
Issue 1
THs=55°C
500A
100% Duty Cycle
500A
100% Duty Cycle
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+00
1kA
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1kA
1.5kA
2kA
1.5kA
2kA
3kA
5kA
3kA
5kA
THs=85°C
R295CH36-40
Issue 1
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse Width (s)
Pulse width (s)
Provisional Data Sheet. Types R295CH36 to R295CH40 Issue 1
Page 10 of 13
August, 2000
WESTCODE Positive development in power electronics
R295CH36 to R295CH40
Figure 13 - Square wave frequency ratings
Figure 14 - Square wave frequency ratings
1.00E+05
1.00E+05
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+00
500A
500A
1kA
100% Duty Cycle
100% Duty Cycle
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+00
1kA
1.5kA
2kA
1.5kA
2kA
3kA
3kA
5kA
5kA
THs=55°C
THs=55°C
di/dt=500A/µs
R295CH36-40
Issue 1
di/dt=100A/µs
R295CH36-40
Issue 1
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 15 - Square wave frequency ratings
Figure 16 - Square wave frequency ratings
1.00E+05
1.00E+05
500A
100% Duty Cycle
1.00E+04
100% Duty Cycle
1.00E+04
500A
1kA
1kA
1.00E+03
1.5kA
1.5kA
2kA
2kA
1.00E+03
3kA
3kA
1.00E+02
5kA
5kA
1.00E+02
1.00E+01
THs=85°C
THs=85°C
di/dt=500A/µs
R295CH36-40
di/dt=100A/µs
R295CH36-40
Issue 1
Issue 1
1.00E+01
1.00E+00
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Provisional Data Sheet. Types R295CH36 to R295CH40 Issue 1
Page 11 of 13
August, 2000
WESTCODE Positive development in power electronics
R295CH36 to R295CH40
Figure 17 - Square wave energy per pulse
Figure 18 - Square wave energy per pulse
1.00E+03
1.00E+03
1.00E+02
1.00E+01
1.00E+00
1.00E-01
R295CH36-40
Issue 1
R295CH36-40
Issue 1
di/dt=100A/µs
Tj=125°C
di/dt=500A/µs
Tj=125°C
1.00E+02
5kA
3kA
2kA
1.00E+01
5kA
3kA
2kA
1.00E+00
1.5kA
1kA
1.00E-01
500A
1.5kA
1kA
500A
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 19 - Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
100000
10000
1000
1.00E+07
1.00E+06
1.00E+05
I2t: VRRM≤10V
I2t: 60% VRRM
ITSM: VRRM≤10V
ITSM: 60% VRRM
Tj (initial) = 125°C
R295CH36-40
Issue 1
1
3
5
10
1
5
10
50 100
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Provisional Data Sheet. Types R295CH36 to R295CH40 Issue 1
Page 12 of 13
August, 2000
WESTCODE Positive development in power electronics
R295CH36 to R295CH40
Outline Drawing & Ordering Information
ORDERING INFORMATION
(Please quote 11 or 12 digit code as below)
R295
CH
♦ ♦
♦
♦ (♦ )
♦
Fixed
Type
Code
Fixed
Outline
Code
Off-state Voltage Code
VDRM/100
dv/dt Code
C=20V/µs, D=50V/µs,
E=100V/µs, F=200V/µs
tq Code
VRRM code
See note 1
below
F=50µs, Y=55µs, 2H=60µs, W=65µs,
2G=70µs, E=75µs, D=100µs
36-40
Note 1.: A single digit represents VRRM in 10% increments of the selected VDRM
.
A zero in this position indicates that VRRM=100% VDRM. The examples shown below are for 80% and 100% respectively.
Typical order code: R295CH40E2G8 – 2.8kV VDRM, 2.24kV VRRM, 100V/µs dv/dt, 70µs tq, 27.7mm clamp height capsule.
Typical order code: R295CH40E2G0 – 2.8kV VDRM, 2.8kV VRRM, 100V/µs dv/dt, 70µs tq, 27.7mm clamp height capsule.
UK: Westcode Semiconductors Ltd.
P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL.
Tel: +44 (0) 1249 444524 Fax: +44 (0) 1249 659448
WESTCODE
E-Mail: WSL.sales@westcode.com
USA: Westcode Semiconductors Inc.
3270 Cherry Avenue, Long Beach, California 90807
Tel: 562 595 6971 Fax: 562 595 8182
E-Mail: WSI.sales@westcode.com
Internet: http://www.westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors
Ltd.
Westcode Semiconductors Ltd.
©
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior
notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.
Provisional Data Sheet. Types R295CH36 to R295CH40 Issue 1
Page 13 of 13
August, 2000
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