R325CH06EH0 [IXYS]
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),1.52KA I(T),TO-200AC;型号: | R325CH06EH0 |
厂家: | IXYS CORPORATION |
描述: | Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),1.52KA I(T),TO-200AC 栅 栅极 |
文件: | 总12页 (文件大小:282K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Date:- 21 Dec, 2000
Data Sheet Issue:- 1
WESTCODE
Distributed Gate Thyristor
Types R325CH02 to R325CH14
Absolute Maximum Ratings
MAXIMUM
LIMITS
VOLTAGE RATINGS
UNITS
VDRM
VDSM
VRRM
VRSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
200-1400
V
V
V
V
200-1400
200-1400
300-1500
MAXIMUM
LIMITS
1178
OTHER RATINGS
UNITS
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
A
A
767
433
A
2395
892
A
A
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
17
kA
kA
A2s
A2s
A/µs
A/µs
V
≤
18.7
Peak non-repetitive surge tp=10ms, VRM 10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM 10V, (note 5)
1.45×106
1.75×106
1000
1500
5
I2t
≤
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
diT/dt
VRGM
PG(AV)
PGM
VGD
Mean forward gate power
2
W
Peak forward gate power
30
W
Non-trigger gate voltage, (Note 7)
Operating temperature range
0.25
V
THS
-40 to +125
-40 to +150
°C
°C
Tstg
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
≤
6) VD=67% VDRM, IFG=2A, tr 0.5µs, Tcase=125°C.
7) Rated VDRM
.
Data Sheet. Types R325CH02 to R325CH14 Issue 1
Page 1 of 12
December, 2000
WESTCODE Positive development in power electronics
R325CH02 to R325CH14
Characteristics
PARAMETER
MIN. TYP. MAX. TEST CONDITIONS
UNITS
(Note 1)
VTM
Maximum peak on-state voltage
Threshold voltage
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.2 ITM=2000A
1.6
V
V
V0
rS
Slope resistance
0.3
Ω
m
dv/dt Critical rate of rise of off-state voltage
200 VD=80% VDRM
150 Rated VDRM
150 Rated VRRM
3.0 Tj=25°C
300 Tj=25°C
1000 Tj=25°C
µ
V/ s
IDRM
IRRM
VGT
IGT
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
mA
V
VD=10V, IT=2A
mA
mA
IH
I
TM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V
TM=1000A, tp=1000µs, di/dt=60A/µs,
Qra
Recovered charge, 50% Chord
-
-
170
190
35
µC
I
-
-
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
tq
Turn-off time
µs
25
40
-
-
-
0.024 Double side cooled
Thermal resistance, junction to
heatsink
R
K/W
θ
-
-
0.048 Single side cooled
F
Mounting force
Weight
19
-
26
-
kN
g
Wt
510
Notes:-
1) Unless otherwise indicated Tj=125°C.
Data Sheet. Types R325CH02 to R325CH14 Issue 1
Page 2 of 12
December, 2000
WESTCODE Positive development in power electronics
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
R325CH02 to R325CH14
V
DRM VDSM VRRM
VRSM
V
VD VR
DC V
140
260
420
560
700
810
930
Voltage Grade 'H'
V
200
400
600
02
04
06
08
10
12
14
210
410
610
810
1100
1300
1400
800
1000
1200
1400
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
1
max =
f
tpulse +tq +tv
Data Sheet. Types R325CH02 to R325CH14 Issue 1
Page 3 of 12
December, 2000
WESTCODE Positive development in power electronics
R325CH02 to R325CH14
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
=
=
−
WAV EP f and TSINK (max.) 125 WAV Rth
(
J −Hs
)
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
Fig. 1
µ
(ii) Qrr is based on a 150 s integration time.
150µs
Qrr = irr .dt
∫
i.e.
0
t1
K Factor =
(iii)
t2
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:
=
−
+
TSINK (new) TSINK (original) E k f Rth
(
J −Hs
)
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s)
f = Rated frequency (in Hz) at the original heat sink temperature
Rth(J-Hs) = D.C. thermal resistance (°C/W)
Data Sheet. Types R325CH02 to R325CH14 Issue 1
Page 4 of 12
December, 2000
WESTCODE Positive development in power electronics
R325CH02 to R325CH14
The total dissipation is now given by:
W(TOT) = W(original) + E f
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
TSINK
=
TSINK
−
E Rth f
(
)
(
new
)
(
original
)
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1
- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
Vr
R2 = 4
di
CS
dt
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R
= Snubber resistance
13.0 Gate Drive
Ω
The recommended pulse gate drive is 20V, 10 with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the necessary charge to
trigger the device.
Data Sheet. Types R325CH02 to R325CH14 Issue 1
Page 5 of 12
December, 2000
WESTCODE Positive development in power electronics
R325CH02 to R325CH14
14.0 Computer Modelling Parameters
14.1 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs. VT, on page 7 is represented in two ways;
(i)
the well established V0 and rs tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
= +
( )
+
+
VT A B ln IT C IT D IT
The constants, derived by curve fitting software, are given in this report for hot characteristics where
possible. The resulting values for VT agree with the true device characteristic over a current range, which
is limited to that plotted.
125°C Coefficients
A
B
C
D
0.62329615
0.2341749
4.506305×10-4
-0.02469732
14.2 D.C. Thermal Impedance Calculation
−
t
=
p n
r = r 1− eτ
p
∑
t
p
=
p 1
Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
rt = Thermal resistance at time t.
rp = Amplitude of pth term.
τp
= Time Constant of rth term.
D.C. Double Side Cooled
3
Term
rp
1
2
4
5
0.01249139
0.8840810
6.316833×10-3
1.850855×10-3
1.922045×10-3
6.742908×10-3
6.135330×10-4
1.326292×10-3
0.1215195
0.03400152
τp
D.C. Single Side Cooled
3
4.863568×10-3 3.744798×10-3 6.818034×10-3 2.183558×10-3 1.848294×10-3
Term
rp
1
2
4
5
6
0.02919832
6.298105
3.286174
0.5359179
0.1186897
0.02404574
3.379476×10-3
τp
Data Sheet. Types R325CH02 to R325CH14 Issue 1
Page 6 of 12
December, 2000
WESTCODE Positive development in power electronics
R325CH02 to R325CH14
Curves
Figure 1 - On-state characteristics of Limit device
Figure 2 - Transient thermal impedance
10000
0.1
SSC 0.048K/W
DSC 0.024K/W
Tj = 125°C
0.01
1000
0.001
0.0001
R325CH02-14
Issue 1
R325CH02-14
Issue 1
100
0.00001
0.0001
0
1
2
3
4
5
0.001
0.01
0.1
1
10
100
Instantaneous on-state voltage - VT (V)
Time (s)
Figure 3 - Gate characteristics - Trigger limits
Figure 4 - Gate characteristics - Power curves
20
6
R325CH02-14
R325CH02-14
Issue 1
Issue 1
Tj=25°C
Tj=25°C
18
5
16
14
Max VG dc
4
Max VG dc
12
IGT, VGT
10
8
3
PG Max 30W dc
2
6
4
1
PG 2W dc
Min VG dc
2
IGD, VGD
Min VG dc
0
0
0
2
4
6
8
10
0
0.25
0.5
0.75
1
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
Data Sheet. Types R325CH02 to R325CH14 Issue 1
Page 7 of 12
December, 2000
WESTCODE Positive development in power electronics
R325CH02 to R325CH14
Figure 5 - Total recovered charge, Qrr
Figure 6 - Recovered charge, Qra (50% chord)
1000
100
10
1000
1000A
500A
2000A
2000A
1000A
500A
250A
250A
100
Tj = 125°C
Tj = 125°C
R325CH02-14
Issue 1
R325CH02-14
Issue 1
10
10
100
Commutation rate - di/dt (A/µs)
1000
10
100
Commutation rate - di/dt (A/µs)
1000
Figure 7 - Peak reverse recovery current, Irm
Figure 8 - Maximum recovery time, trr (50% chord)
10
1000
2000A
1000A
500A
250A
2000A
1000A
100
500A
250A
Tj = 125°C
Tj = 125°C
R325CH02-14
Issue 1
R325CH02-14
Issue 1
1
10
10
100
1000
10
100
Commutation rate - di/dt (A/µs)
1000
Commutation rate - di/dt (A/µs)
Data Sheet. Types R325CH02 to R325CH14 Issue 1
Page 8 of 12
December, 2000
WESTCODE Positive development in power electronics
R325CH02 to R325CH14
Figure 9 - Reverse recovery energy per pulse
Figure 10 - Sine wave energy per pulse
1.00E+02
1.00E+01
1.00E+00
1.00E-01
1.00E-02
1
R325CH02-14
Issue 1
Tj=125°C
2000A
1000A
5kA
500A
3kA
2kA
0.1
250A
1kA
Snubber:
0.25µF,3
Ω
Tj = 125°C
500A
Vrm = 67% VRRM
R325CH02-14
Issue 1
250A
0.01
1.00E-05
1.00E-04
1.00E-03
1.00E-02
10
100
Commutation rate - di/dt (A/µs)
1000
Pulse width (s)
Figure 11 - Sine wave frequency ratings
Figure 12 - Sine wave frequency ratings
1.00E+05
1.00E+05
R325CH02-14
Issue 1
500A
THs=55°C
500A
100% Duty Cycle
100% Duty Cycle
1.00E+04
1kA
1kA
1.00E+04
2kA
2kA
3kA
1.00E+03
3kA
1.00E+03
1.00E+02
1.00E+01
1.00E+02
5kA
5kA
1.00E+01
THs=85°C
R325CH02-14
Issue 1
1.00E+00
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse Width (s)
Pulse width (s)
Data Sheet. Types R325CH02 to R325CH14 Issue 1
Page 9 of 12
December, 2000
WESTCODE Positive development in power electronics
R325CH02 to R325CH14
Figure 13 - Square wave frequency ratings
Figure 14 - Square wave frequency ratings
1.00E+05
1.00E+05
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+00
500A
500A
1kA
1kA
100% Duty Cycle
100% Duty Cycle
1.00E+04
2kA
2kA
3kA
1.00E+03
3kA
5kA
5kA
1.00E+02
1.00E+01
THs=55°C
THs=55°C
di/dt=500A/µs
di/dt=100A/µs
R325CH02-14
Issue 1
R325CH02-14
Issue 1
1.00E+00
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 15 - Square wave frequency ratings
Figure 16 - Square wave frequency ratings
1.00E+05
1.00E+05
250A
100% Duty Cycle
1.00E+04 500A
500A
100% Duty Cycle
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1kA
1kA
1.00E+03
1.00E+02
1.00E+01
1.00E+00
2kA
2kA
3kA
3kA
5kA
5kA
THs=85°C
THs=85°C
di/dt=100A/µs
di/dt=500A/µs
R325CH02-14
Issue 1
R325CH02-14
Issue 1
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Data Sheet. Types R325CH02 to R325CH14 Issue 1
Page 10 of 12
December, 2000
WESTCODE Positive development in power electronics
R325CH02 to R325CH14
Figure 17 - Square wave energy per pulse
Figure 18 - Square wave energy per pulse
1.00E+03
1.00E+03
1.00E+02
1.00E+01
1.00E+00
1.00E-01
1.00E-02
R325CH02-14
Issue 1
R325CH02-14
Issue 1
di/dt=100A/µs
Tj=125°C
di/dt=500A/µs
Tj=125°C
1.00E+02
5kA
3kA
2kA
1.00E+01
5kA
3kA
1.00E+00
2kA
1kA
1.00E-01 500A
1kA
500A
250A
250A
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 19 - Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
100000
10000
1000
1.00E+07
1.00E+06
1.00E+05
I2t: VRRM 10V
≤
I2t: 60% VRRM
≤
ITSM: VRRM 10V
ITSM: 60% VRRM
Tj (initial) = 125°C
R325CH02-14
Issue 1
1
3
5
10
1
5
10
50 100
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Data Sheet. Types R325CH02 to R325CH14 Issue 1
Page 11 of 12
December, 2000
WESTCODE Positive development in power electronics
R325CH02 to R325CH14
Outline Drawing & Ordering Information
ORDERING INFORMATION
(Please quote 11 or 12 digit code as below)
R325
CH
♦ ♦
♦
♦ (♦ )
♦
Fixed
Type Code
Fixed
Outline Code
Off-state Voltage Code
VDRM/100
dv/dt Code
C=20V/µs, D=50V/µs,
E=100V/µs, F=200V/µs
tq Code (@ 200V/µs)
J=25µs, H=30µs,
G=35µs, 2K=40µs
VRRM code
See note 1
below
02-14
Note 1.: A single digit represents VRRM in 10% increments of the selected VDRM
.
A zero in this position indicates that VRRM=100% VDRM. The examples shown below are for 70% and 100% respectively.
Typical order code: R325CH10F2K7 – 1000V VDRM, 700V VRRM, 200V/µs dv/dt, 40µs tq, 27.7mm clamp height capsule.
Typical order code: R325CH10F2K0 – 1000V VDRM, 1000V VRRM, 200V/µs dv/dt, 40µs tq, 27.7mm clamp height capsule.
UK: Westcode Semiconductors Ltd.
P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL.
Tel: +44 (0) 1249 444524 Fax: +44 (0) 1249 659448
WESTCODE
E-Mail: WSL.sales@westcode.com
USA: Westcode Semiconductors Inc.
3270 Cherry Avenue, Long Beach, California 90807
Tel: 562 595 6971 Fax: 562 595 8182
E-Mail: WSI.sales@westcode.com
Internet: http://www.westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or
© Westcode Semiconductors Ltd.
disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors
Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior
notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.
Data Sheet. Types R325CH02 to R325CH14 Issue 1
Page 12 of 12
December, 2000
相关型号:
R325CH06EH7
Silicon Controlled Rectifier, 2398A I(T)RMS, 892000mA I(T), 600V V(DRM), 420V V(RRM), 1 Element,
IXYS
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