S1200NC25V [IXYS]
Gate Turn-Off SCR,;
| 型号： | S1200NC25V |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Gate Turn-Off SCR, 栅 |
| 文件： | 总15页 (文件大小：346K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Date:- 8 Apr, 2005
Data Sheet Issue:- 3
WESTCODE
An IXYS Company
Symmetrical Gate Turn-Off Thyristor
Type S1200NC25#
Absolute Maximum Ratings
MAXIMUM
UNITS
VOLTAGE RATINGS
LIMITS
2500
VDRM
VRSM
VRRM
VRSM
Repetitive peak off-state voltage, (note 1).
Non-repetitive peak off-state voltage, (note 1).
Repetitive peak reverse voltage.
V
V
V
V
2600
100-2000
100-2000
Non-repetitive peak reverse voltage.
MAXIMUM
LIMITS
UNITS
A
µH
A
RATINGS
ITGQM
Ls
Maximum peak turn-off current, (note 2).
Snubber loop inductance, ITM=ITGQM, (note 2).
1200
0.3
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
Mean on-state current, Tsink=55°C (note 3).
Nominal RMS on-state current, 25°C (note 3).
Peak non-repetitive surge current tp=10ms.
Peak non-repetitive surge current, (Note 4)
I2t capacity for fusing tp=10ms.
Critical rate of rise of on-state current, (note 5).
Peak forward gate power.
Peak reverse gate power.
790
1600
13.0
23.0
840
1000
200
8
140
18
80
A
kA
kA
kA2s
A/µs
W
kW
A
V
Peak forward gate current.
Peak reverse gate voltage (note 6).
Minimum permissible off-time, ITM=ITGQM, (note 2).
Minimum permissible on-time.
µs
µs
ton
20
Tjop
Tstg
Operating temperature range.
Storage temperature range.
-40 to +125
-40 to +150
°C
°C
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=80%VDM, VDM<VDRM, diGQ/dt=20A/µs, CS=3µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, tp=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
Data Sheet. Type S1200NC25# Issue 3
Page 1 of 15
April, 2005
WESTCODE An IXYS Company
Symmetrical Gate Turn-Off Thyristor type S1200NC25#
Characteristics
UNITS
V
Parameter
Maximum peak on-state voltage.
MIN
-
TYP MAX TEST CONDITIONS
VTM
IL
2.4
10
10
-
2.7 IG=2A, IT=1200A.
Latching current.
-
-
-
Tj=25°C.
A
IH
Holding current.
-
Tj=25°C.
A
dv/dtcr Critical rate of rise of off-state voltage.
1000
-
VD=80%VDRM, VGR=-2V.
Rated VDRM, VGR=-2V
V/µs
mA
mA
mA
V
IDM
Peak off state current.
-
-
-
-
-
-
-
-
-
-
50
IRM
Peak reverse current.
-
100 Rated VRRM
200 VGR=-16V
IGKM
Peak negative gate leakage current.
-
1.0
0.9
0.8
2
-
-
Tj=-40°C.
Tj=25°C.
Tj=125°C.
Tj=-40°C.
Tj=25°C.
VGT
Gate trigger voltage.
Gate trigger current.
V
VD=25V, RL=25mΩ
VD=25V, RL=25mΩ
-
V
7
2
A
IGT
0.5
0.05
A
0.3 Tj=125°C.
A
VD=50%VDRM, ITGQ=1200A, IGM=20A, diG/dt=10A/µs
Tj=25°C, di/dt=300A/µs, (10%IGM to 90%VD).
µs
td
tgt
tf
Delay time.
Turn-on time.
Fall time.
-
-
-
1.5
4.5
1
-
8.0 Conditions as for td, (10%IGM to 10%VD).
µs
µs
VD=80%VDRM, ITGQ=1200A, CS=3µF,
-
diGQ/dt=20A/µs, VGR=-16V, (90%ITGQ to 10%IVD).
tgq
Turn-off time.
-
19
22
-
Conditions as for tf, (10%IGQ to 10%ITGQ).
Conditions as for tf.
µs
A
Igq
Turn-off gate current.
Turn-off gate charge.
Tail time.
-
300
Qgq
ttail
tgw
-
4000 5000 Conditions as for tf.
µC
µs
-
50
75
-
Conditions as for tf, (10%ITGQ to ITGQ<1A).
Conditions as for tf.
Gate off-time (see note 3).
150
-
µs
-
-
-
0.027 Double side cooled.
0.070 Cathode side cooled.
0.045 Anode side cooled.
K/W
K/W
K/W
kN
g
RthJK
Thermal resistance junction to sink.
-
-
-
-
F
Mounting force.
Weight.
15
-
25
-
(see note 2).
Wt
480
Notes:-
1) Unless otherwise indicated Tj=125oC.
2) For other clamping forces, consult factory.
3) The gate off-time is the period during which the gate circuit is
required to remain low impedance to allow for the passage
of tail current.
Data Sheet. Type S1200NC25# Issue 3
Page 2 of 15
April, 2005
WESTCODE An IXYS Company
Symmetrical Gate Turn-Off Thyristor type S1200NC25#
Notes on ratings and characteristics.
1. Maximum Ratings.
1.1 Off-state voltage ratings.
Unless otherwise indicated, all off-state voltage ratings are given for gate conditions as diagram 1. For
other gate conditions see the curves of figure 5. It should be noted that VDRM is the repeatable peak
voltage which may be applied to the device and does not relate to a DC operating condition. While not
given in the ratings, VDC should ideally be limited to 60% VDRM in this product.
Diagram 1.
1.2 Reverse voltage rating.
All devices in this series have a minimum VRRM of 100 Volts. If specified at the time of order, a VRRM up to
80%VDRM is available.
1.3 Peak turn-off current.
The figure given in maximum ratings is the highest value for normal operation of the device under
conditions given in note 2 of ratings. For other combinations of ITGQ, VD and Cs see the curves of figures
15 & 16. The curves are effective over the normal operating range of the device and assume a snubber
circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is
employed then the equivalent CS should be used and Ls<0.3µH must be ensured for the curves to be
applied.
L
s
R
D
s
C
s
Diagram 2.
1.4 R.M.S and average current.
Measured as for standard thyristor conditions, double side cooled, single phase, 50Hz, 180° half-
sinewave. These are included as a guide to compare the alternative types of GTO thyristors available,
values can not be applied to practical applications, as they do not include switching losses.
1.5 Surge rating and I2t.
Ratings are for half-sinewave, peak value against duration is given in the curve of figure 4.
1.6 Snubber loop inductance.
Use of GTO thyristors with snubber loop inductance, Ls<0.3µH implies no dangerous Vs voltages (see
diagrams 2 & 3) can be applied, provided the other conditions given in note 1.3 are enforced. Alternatively
Vs should be limited to 700 Volts to avoid possible device failure.
Data Sheet. Type S1200NC25# Issue 3
Page 3 of 15
April, 2005
WESTCODE An IXYS Company
Symmetrical Gate Turn-Off Thyristor type S1200NC25#
1.7 Critical rate of rise of on-state current
The value given is the maximum repetitive rating, but does not imply any specific operating condition. The
high turn-on losses associated with limit di/dt would not allow for practical duty cycle at this maximum
condition. For special pulse applications, such as crowbars and pulse power supplies, a much higher di/dt
is possible. Where the device is required to operate with infrequent high current pulses, with natural
commutation (i.e. not gate turn-off), then di/dt>5kA/µs is possible. For this type of operation individual
specific evaluation is required.
1.8 Gate ratings
The absolute conditions above which the gate may be damaged. It is permitted to allow VGK(AV) during turn-
off (see diagram 10) to exceed VRGM which is the implied DC condition.
1.9 Minimum permissible off time.
This time relates specifically to re-firing of device (see also note on gate-off time 2.7). The value given in
the ratings applies only to operating conditions of ratings note 2. For other operating conditions see the
curves of figure 18.
1.10 Minimum permissible on-time.
Figure is given for minimum time to allow complete conduction of all the GTO thyristor islands. Where a
simple snubber, of the form given in diagram 1. (or any other non-energy recovery type which discharges
through the GTO at turn-on) the actual minimum on-time will usually be fixed by the snubber circuit time
constant, which must be allowed to fully discharge before the GTO thyristor is turned off. If the anode
circuit has di/dt<10A/µs then the minimum on-time should be increased, the actual value will depend upon
the di/dt and operating conditions (each case needs to be assessed on an individual basis).
Data Sheet. Type S1200NC25# Issue 3
Page 4 of 15
April, 2005
WESTCODE An IXYS Company
Symmetrical Gate Turn-Off Thyristor type S1200NC25#
2 Characteristics
2.1 Instantaneous on-state voltage
Measured using a 500µs square pulse, see also the curves of figure 2 for other values of ITM.
2.2 Latching and holding current
These are considered to be approximately equal and only the latching current is measured, type test only
as outlined below. The test circuit and wave diagrams are given in diagram 4. The anode current is
monitored on an oscilloscope while VD is increased, until the current is seen to flow during the un-gated
period between the end of IG and the application of reverse gate voltage. Test frequency is 100Hz with IGM
& IG as for td of characteristic data.
IG
100µs
IGM
Gate current
15V
100µs
Anode current
unlatched condition
Unlatched
Latched
R1
CT
C1
Anode current
Latched condition
Vs
DUT
Gate-drive
Diagram 4, Latching test circuit and waveforms.
2.3 Critical dv/dt
The gate conditions are the same as for 1.1, this characteristic is for off-state only and does not relate to
dv/dt at turn-off. The measurement, type test only, is conducted using the exponential ramp method as
shown in diagram 5. It should be noted that GTO thyristors have a poor static dv/dt capability if the gate is
open circuit or RGK is high impedance. Typical values: - dv/dt<30V/µs for RGK>10Ω.
Diagram 5, Definition of dV/dt.
2.4 Off-state leakage.
For IDRM & IRRM see notes 1.1 & 1.2 for gate leakage IGK, the off-state gate circuit is required to sink this
leakage and still maintain minimum of –2 Volts. See diagram 6.
Diagram 6.
Data Sheet. Type S1200NC25# Issue 3
Page 5 of 15
April, 2005
WESTCODE An IXYS Company
Symmetrical Gate Turn-Off Thyristor type S1200NC25#
2.5 Gate trigger characteristics.
These are measured by slowly ramping up the gate current and monitoring the transition of anode current
and voltage (see diagram 7). Maximum and typical data of gate trigger current, for the full junction
temperature range, is given in the curves of figure 6. Only typical figures are given for gate trigger voltage,
however, the curves of figure 1 give the range of gate forward characteristics, for the full allowable
junction temperature range. The curves of figures 1 & 6 should be used in conjunction, when considering
forward gate drive circuit requirement. The gate drive requirements should always be calculated for lowest
junction temperature start-up condition.
Feedback
Anode current
0.9VAK
R1
Not to scale
Current-
sence
CT
Gate current
C1
Vs
0.1IA
IGT
Anode-Cathode
Voltage
DUT
Gate-drive
Diagram 7, Gate trigger circuit and waveforms.
2.6 Turn-on characteristics
The basic circuit used for turn-on tests is given in diagram 8. The test is initiated by establishing a
circulating current in Tx, resulting in VD appearing across Cc/Lc. When the test device is fired Cc/Lc
discharges through DUT and commutates Tx off, as pulse from Cc/Lc decays the constant current source
continues to supply a fixed current to DUT. Changing value of Cc & Lc allows adjustment of ITM and di/dt
respectively, VD and i are also adjustable.
Lc
Cc
R1
CT
Tx
D
i
Cd
Vd
DUT
Gate-drive
Diagram 8, Turn-on test circuit of FT40.
The definitions of turn-on parameters used in the characteristic data are given in diagram 9. The gate
circuit conditions IGM & IG are fully adjustable, IGM duration 10µs.
diG/dt
IG
IGM
td
tr
di/dt
ITM
VD
VD=VDM
tgt
Eon integral
period
Diagram 9, Turn-on wave-diagrams.
Data Sheet. Type S1200NC25# Issue 3
Page 6 of 15
April, 2005
WESTCODE An IXYS Company
Symmetrical Gate Turn-Off Thyristor type S1200NC25#
In addition to the turn-on time figures given in the characteristics data, the curves of figure 9 give the
relationship of tgt to di/dt and IGM. The data in the curves of figures 7 & 8, gives the turn-on losses both with
and without snubber discharge, a snubber of the form given in diagram 2 is assumed. Only typical losses
are given due to the large number of variables which effect Eon. It is unlikely that all negative aspects
would appear in any one application, so typical figures can be considered as worst case. Where the turn-
on loss is higher than the figure given it will in most cases be compensated by reduced turn-off losses, as
variations in processing inversely effect many parameters. For a worst case device, which would also
have the lowest turn-off losses, Eon would be 1.5x values given in the curves of figures 7 & 8. Turn-on
losses are measured over the integral period specified below:-
10µs
Eon = iv.dt
∫
0
The turn-on loss can be sub-divided into two component parts, firstly that associated with tgt and secondly
the contribution of the voltage tail. For this series of devices tgt contributes 50% and the voltage tail 50%
(These figures are approximate and are influenced by several second order effects). The loss during tgt is
greatly affected by gate current and as with turn-on time (figure 9), it can be reduced by increasing IGM
.
The turn-on loss associated with the voltage tail is not effected by the gate conditions and can only be
reduced by limiting di/dt, where appropriate a turn-on snubber should be used. In applications where the
snubber is discharged through the GTO thyristor at turn-on, selection of discharge resistor will effect Eon.
The curves of figure 8 are given for a snubber as shown in diagram 2, with R=5Ω, this is the lowest
recommended value giving the highest Eon, higher values will reduce Eon.
2.7 Turn-off characteristics
The basic circuit used for the turn-off test is given in diagram 10. Prior to the negative gate pulse being
applied constant current, equivalent to ITGQ, is established in the DUT. The switch Sx is opened just before
DUT is gated off with a reverse gate pulse as specified in the characteristic/data curves. After the period
tgt voltage rises across the DUT, dv/dt being limited by the snubber circuit. Voltage will continue to rise
across DUT until Dc turns-on at a voltage set by the active clamp Cc, the voltage will be held at this value
until energy stored in Lx is depleted, after which it will fall to VDC .The value of Lx is selected to give
required VD Over the full tail time period. The overshoot voltage VDM is derived from Lc and forward voltage
characteristic of DC, typically VDM=1.2VD to 1.5VD depending on test settings. The gate is held reverse
biased through a low impedance circuit until the tail current is fully extinguished.
Lc
Dc
Sx
RL
Rs
Lx
Cc
Vd
Vc
Ds
CT
DX
i
Cd
Cs
DUT
Gate-
drive
RCD snubber
Diagram 10, Turn-off test circuit.
The definitions of turn-off parameters used in the characteristic data are given in diagram 11.
Data Sheet. Type S1200NC25# Issue 3
Page 7 of 15
April, 2005
WESTCODE An IXYS Company
Symmetrical Gate Turn-Off Thyristor type S1200NC25#
tgq
tf
0.9
VDM
ITGQ
VD
0.1
0.1
VGR
VGQ
QGQ
VG(AV)
IGQ
tgw
Diagram 11, Turn-off parameter definitions.
In addition to the turn-off figures given in characteristic data, the curves of figures 10, 11 & 12 give the
relationship of IGQ QGQ and tgq to turn-off current (ITGQ) and diGQ/dt. Only typical values of IGQ are given due
to a great dependence upon the gate circuit impedance, which is a function of gate drive design not the
device. The tgq is also, to a lesser extent, affected by circuit impedance and as such the maximum figures
given in data assume a good low impedance circuit design. The curves of figures 17 & 18 give the tail time
and minimum off time to re-fire device as a function of turn-off current. The minimum off time to re-fire the
device is distinct from tgw, the gate off time given in characteristics. The GTO thyristor may be safely re-
triggered when a small amount of tail current is still flowing. In contrast, the gate circuit must remain low
impedance until the tail current has fallen to zero or below a level which the higher impedance VGR circuit
can sink without being pulled down below –2 Volts. If the gate circuit is to be switched to a higher
impedance before the tail current has reached zero then the requirements of diagram 12 must be applied.
itail
R
(VGR - itailR)>2V
Diagram 12.
VGR
The figure tgw, as given in the characteristic data, is the maximum time required for the tail current to
decay to zero. The figure is applicable under all normal operating conditions for the device; provided
suitable gate drive is employed. At lower turn-off current, or with special gate drive considerations, this
time may be reduced (each case needs to be considered individually).Typical turn-off losses are given in
the curves of figures 13 & 14, the integration period for the losses is nominally taken to the end of the tail
time (Itail<1A) i.e. :-
tgt+ttail
Eoff =
iv.dt.
∫
0
Data Sheet. Type S1200NC25# Issue 3
Page 8 of 15
April, 2005
WESTCODE An IXYS Company
Symmetrical Gate Turn-Off Thyristor type S1200NC25#
The curves of figure 13 give the turn-off energy for a fixed VD with a VDM=120%VD, whereas the curves of
figure 14 give the turn-off energy with a fixed value of VDM and VD=50%VDRM. The curves are for energy
against turn-off current/snubber capacitance with a correction for voltage inset as an additional graph
(snubber equivalent to diagram 2 is assumed). From these curves a typical value of turn-off energy for any
combination of ITGQ/Cs and VD or VDM can be derived. Only typical data is included, to allow for the trade-
off with on-state voltage (VTM) which is a feature of these devices, see diagram 13. When calculating
losses in an application, the use of a maximum VTM and typical Eoff will (under normal operating
frequencies) give a more realistic value. The lowest VTM device of this type would have a maximum turn-
off energy of 1.5x the figure given in the curves of figures 13 & 14.
Trade-off between V & Eoff
TM
Eoff
Diagram 13.
V
TM
2.8 Safe turn-off periphery
The necessity to control dv/dt at tun-off for the GTO thyristor implies a trade-off between ITGQ/VDM/Cs. This
information is given in the curves of figures 15 & 16. The information in these curves should be
considered as maximum limits and not implied operating conditions, some margin of 'safety' is advised
with the conditions of the curves reserved for occasional excursions. It should be noted that these curves
are derived at maximum junction temperature, however, they may be applied across the full operating
temperature range of the device provided additional precautions are taken. At very low temperature,
(below –10°C) the fall-time of device becomes very rapid and can give rise to very high turn-off voltage
spikes, as such it is advisable to reduce snubber loop inductance to <0.2µH to minimise this effect.
Data Sheet. Type S1200NC25# Issue 3
Page 9 of 15
April, 2005
WESTCODE An IXYS Company
Symmetrical Gate Turn-Off Thyristor type S1200NC25#
Curves
Figure 1 –Forward gate characteristics
Figure 2 - On-state characteristics of Limit device
10000
1000
S1200NC25#
Issue 3
S1200NC25#
Issue 3
For Tj=-40°C to +125°C
25°C
125°C
Minimum
Maximum
1000
100
10
100
10
1
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
Instantaneous On-State Voltage, VT (V)
Instantaneous Forward Gate Voltage, VFG (V)
`
Figure 3 - Maximum surge and I2t Ratings
100000
1.00E+07
S1200NC25#
Issue 3
I2t: VRRM ≤10V
I2t: 60% VRRM
Tj (initial) = 125°C
10000
1.00E+06
ITSM: VRRM 10V
≤
ITSM: 60% VRRM
1000
1.00E+05
1
3
5
10
1
5
10
50 100
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Data Sheet. Type S1200NC25# Issue 3
Page 10 of 15
April, 2005
WESTCODE An IXYS Company
Symmetrical Gate Turn-Off Thyristor type S1200NC25#
Figure 5 – Typical forward blocking voltage Vs.
external gate-cathode resistance
Figure 4 – Transient thermal impedance
0.1
0
S1200NC25#
S1200NC25#
Issue 3
Cathode
Anode
Issue 3
RGK
0.2
Tj=125oC
Double-Side
0.01
0.4
0.6
0.8
0.001
Tj=100oC
Tj=25oC
1
1.2
0.0001
1
10
100
1000
0.001
0.01
0.1
Time, (s)
1
10
100
External Gate-Cathode Resistance, RGK (Ω)
Figure 7 – Typical turn-on energy per pulse
(excluding snubber discharge)
Figure 6 – Gate trigger current
10
0.4
S1200NC25#
Issue 3
S1200NC25#
Issue 3
IGM=20A, diGQ/dt=10A/ µs
0.35
500A/µs
VD=50%VDRM
Tj=25oC
0.3
0.25
0.2
1
400A/µs
Maximum
Typical
0.15
0.1
300A/µs
200A/µs
0.1
100A/µs
0.05
0
0.01
0
500
1000
1500
2000
-50
-25
0
25
50
75
100
125
150
Junction Temperature, Tj (°C)
Turn-On Current, ITM (A)
Data Sheet. Type S1200NC25# Issue 3
Page 11 of 15
April, 2005
WESTCODE An IXYS Company
Symmetrical Gate Turn-Off Thyristor type S1200NC25#
Figure 8 – Typical turn-on energy per pulse
(including snubber discharge)
Figure 9 – Maximum turn-on time
12
1
S1200NC25#
Issue 3
S1200NC25#
Issue 3
VD=50%VDRM, ITGQ=1200A
IGM=20A, diG/dt=10A/µs
400A/µs
tr of IGM ≤ 2µs
Tj=25oC
IGM=20A
IGM=40A
IGM=60A
Cs=2µF, Rs=5W
VD=50%VDRM
Tj=25oC
0.75
300A/µs
8
4
0
200A/µs
0.5
100A/µs
0.25
0
0
500
1000
1500
2000
10
100
Rate Of Rise Of On-State Current, di/dt (A/ µs)
1000
Turn-On Current, ITM (A)
Figure 10 – Typical peak turn-off gate current
Figure 11 – Maximum gate turn-off charge
500
6
S1200NC25#
Issue 3
S1200NC25#
Issue 3
VD=67%VDRM
Tj=125oC
VD=67%VDRM
Tj=125oC
diGQ/dt=50A/µs
diGQ/dt=40A/µs
diGQ/dt=30A/µs
20A/µs
5
4
3
2
1
0
400
300
200
100
0
30A/µs
40A/µs
50A/µs
diGQ/dt=20A/µs
0
500
1000
1500
0
500
1000
1500
Turn-Off Current, ITGQ (A)
Turn-Off Current, ITGQ (A)
Data Sheet. Type S1200NC25# Issue 3
Page 12 of 15
April, 2005
WESTCODE An IXYS Company
Symmetrical Gate Turn-Off Thyristor type S1200NC25#
Figure 12 – Maximum turn-off time
Figure 13 – Turn-off energy per pulse
1.5
25
S1200NC25#
Issue 3
VD=2000V, VDM=120%VD
diGQ/dt=20A/µs
S1200NC25#
Issue 3
VD=67%VDRM
Tj=125oC
20A/µs
Ls≤0.3µH
Tj=125oC
CS=1.5mF
CS=2mF
20
15
10
5
CS=1mF
CS=3mF
30A/µs
40A/µs
1
0.5
0
CS=0.5mF
50A/µs
VDM
VD
For other values of VD
scale Eoff. Note:VDM£VDRM
1.5
1
0.5
1000
2000
VD
3000
0
0
500
1000
1500
0
500
1000
1500
Turn-Off Current, ITGQ (A)
Turn-Off Current, ITGQ (A)
Figure 14 – Typical turn-off energy per pulse
Figure 15 – Maximum permissible turn-off current
2
3
S1200NC25#
S1200NC25#
Issue 3
Issue 3
VDM=3000V, VD=50%VDRM
diGQ/dt=20A/µs
diGQ/dt=20A/µs
≤
Ls 0.3µH
Cs=1.5µF
Ls 0.3µH
2.5
2
Tj=125oC
≤
Cs=2µF
Cs=3µF
Cs=1µF
Tj=125oC
V
DM≤150%VD
VD
1.5
Cs=0.5µF
1
1.5
1
VD=80%VDRM
VD=65%VDRM
VD 50%VDRM
≤
VDM
VD
Note: VDM VDRM
≤
0.5
For other valuesof VDM scale E
off
1.5
0.5
0
1
0.5
4500
1500
3000
VDM
0
0
500
1000
1500
0
500
1000
1500
Turn-Off Current, ITGQ (A)
Turn-Off Current, ITGQ (A)
Data Sheet. Type S1200NC25# Issue 3
Page 13 of 15
April, 2005
WESTCODE An IXYS Company
Symmetrical Gate Turn-Off Thyristor type S1200NC25#
Figure 16 – Maximum turn-off current
Figure 17 – Maximum tail time
100
1500
S1200NC25#
Issue 3
V
DM≤150%VD
VD
VD=67%VDRM
Tj=125oC
Cs=3µF
J
1200
Cs=2µF
75
50
25
Cs=1.4µF
900
Cs=1µF
600
Cs=0.5µF
300
Tj=125oC
Ls≤0.3µH
diGQ/dt=20A/µs
S1200NC25#
Issue 3
0
0
0.2
0.4
0.6
0.8
1
0
500
1000
1500
Turn-Off Voltage As The Ratio VD/VDRM
Turn-Off Current, ITGQ (A)
Figure 18 – Minimum off-time to re-fire device
100
S1200NC25#
Issue 3
diGQ/dt=20A/µs
VD=67%VDRM
90
Tj=125°C
80
70
60
50
0
500
1000
1500
Turn-Off Current, ITGQ (A)
Data Sheet. Type S1200NC25# Issue 3
Page 14 of 15
April, 2005
WESTCODE An IXYS Company
Symmetrical Gate Turn-Off Thyristor type S1200NC25#
Outline Drawing & Ordering Information
ORDERING INFORMATION
(Please quote 10 digit code as below)
S1200
NC
♦ ♦
#
Fixed
Fixed
Fixed Voltage Code
VRRM Code as % of VDRM
D=80, E=75, F=70, G=65,H=60, J=55, K=50,
L=45, M=40, N=35, P=30, R=25, S=20, T=15,
V=10, W=5, Y=100V
Type Code
Outline Code
VDRM/100
25
Typical order code: S1200NC25G – 2500V VDRM, VRRM=65%VDRM (1625V), 37.7mm clamp height capsule.
IXYS Semiconductor GmbH
Edisonstraße 15
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
D-68623 Lampertheim
Tel: +49 6206 503-0
WESTCODE
An IXYS Company
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
Fax: +44 (0)1249 659448
E-mail: WSL.sales@westcode,com
IXYS Corporation
Westcode Semiconductors Inc
3270 Cherry Avenue
3540 Bassett Street
www.westcode.com
www.ixys.com
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
E-mail: WSI.sales@westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
© Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.
Data Sheet. Type S1200NC25# Issue 3
Page 15 of 15
April, 2005
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