SS275TC12205 [IXYS]
Silicon Carbide Schottky Diode;
| 型号： | SS275TC12205 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Silicon Carbide Schottky Diode |
| 文件： | 总3页 (文件大小：542K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS275TA12205, SS275TC12205, SS275TI12205
VRRM = 1200 V
Silicon Carbide Schottky Diode
Part Number
VRRM (V)
IF(AVG) (A) Configuration
IF(AVG)
CJ
=
5 A
SS275TA12205
SS275TC12205
SS275TI12205
1200
5
5
5
Triple Common Anode
= 90 pF
1200
Triple Common Cathode
Triple Independent
1200
Triple Anode (TA)
Triple Cathode (TC)
Triple Independent (TI)
A = Anode C = Cathode
Symbol Parameter per diode
Test Conditions Maximum Ratings
Features
VRRM
Repetitive Peak Reverse Voltage
Repetitive Surge Reverse Voltage
DC Blocking Voltage
1200
1200
1200
5
V
V
V
A
1200 V SiC Schottky Diode
Surface Mount Package
Zero Reverse Recovery
VRSM
VDC
Zero Forward Recovery
Average Forward Current
High-Frequency Operation
Temperature-Independent Behavior
Positive Temperature Coefficient for V
IF(AVG)
TJ = 175°C
TC = 25°C, tP = 8 ms
Half Sine Wave
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Operating Virtual Junction Temperature
30
100
A
A
IFRM
F
Applications
TC = 25°C, tP = 10 µs
Pulse
IFSM
TVJ
MHz Switch Mode Power Supplies
High-Frequency Converters
Resonant Converters
-55 to +175
°C
Rectifier Circuits
TSTG
PTOT
Storage Temperature
-55 to +175
°C
W
100
TC = 25 °C (33.3 W per diode)
Symbol
Parameter per diode
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
Typ.
Max. Units
Forward Voltage
VF
IF = 5 A, TJ = 25°C
TJ = 175°C
1.5
2.5
1.8
V
3
Reverse Current
IR
VR = 1200 V, TJ = 25°C
TJ = 175°C
50
100
200
μA
1000
Junction Capacitance
f = 1 MHz, VR = 0 V
VR = 200 V
575
120
90
CJ
pF
VR = 1200 V
Capacitive Charge
VR = 1200 V
108
1.5
nC
°C/W
°C
QC
Thermal Resistance
RTHJC
Lead Soldering Temperature
1.6 mm (0.063 in) from case for 10 s
300
TL
Pin to Substrate
Isolation
>2000
>1700
V
RMS
Pin to Pin
2
g
Weight
SS275TA12205, SS275TC12205, SS275TI12205
Fig. 1
20
Fig. 2
Forward Voltage vs. Current
Capacitance vs. Reverse Voltage
7E-10
6E-10
5E-10
4E-10
3E-10
2E-10
1E-10
0
18
16
14
12
10
8
TJ = 25°C
TJ = 175°C
6
4
2
0
0
200
400
600
800
1000
1200
0
2
4
6
8
VR (V)
VF (V)
Forward Voltage vs. Temperature
IF = 5 A
Fig. 3
Fig. 4
QC vs. Reverse Voltage
1.2
1.E-07
1.E-07
8.E-08
6.E-08
4.E-08
2.E-08
0.E+00
1
0.8
0.6
0.4
0.2
0
-50
-30
-10
10
30
50
70
90
0
200
400
600
800
1000
1200
Temperature (°C)
VR (V)
Fig. 6
Fig. 5
Leakage Current vs. Temperature
VR = 1000 V
Leakage Current vs. Reverse Voltage
1
0.035
0.1
0.01
0.03
0.025
0.02
0.015
0.01
0.005
0
0.001
0.0001
0.00001
0.000001
-50
0
50
100
0
500
1000
1500
VR (V)
Temperature (°C)
SS275TA12205, SS275TC12205, SS275TI12205
Fig. 7 Package Diagram
End View
Top View
A1
C1
A2
A3
C2
C3
Bottom View
Side View
© 2015 IXYS RF
An
IXYS Company
1609 Oakridge Dr., Suite 100
Fort Collins, CO USA 80525
970-493-1901 Fax: 970-232-3025
Email: sales@ixyscolorado.com
Web: http://www.ixyscolorado.com
DCB – Direct Copper Bond under Nickel plating on an Aluminum Nitride substrate, electrically isolated from any pin.
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