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T-IXFD90N20Q [IXYS]

Power Field-Effect Transistor, 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;

T-IXFD90N20Q


元器件型号：	T-IXFD90N20Q
生产厂家：	IXYS CORPORATION
描述和应用：	Power Field-Effect Transistor, 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 晶体管
PDF文件：	总1页 (文件大小：128K)
下载文档：	下载PDF数据表文档文件
型号参数：T-IXFD90N20Q参数

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T-IXGD10N100

Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel

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T-IXGD10N100A

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T-IXGD10N100A

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Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel

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T-IXGD10N60A

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel

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0 IXYS

T-IXGD12N100

Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel

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0 IXYS

T-IXGD12N100A

Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel

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T-IXGD12N100A

Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel

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T-IXGD17N100

Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel

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T-IXGD17N100

Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel

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0 IXYS

T-IXGD17N100A

Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel

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0 IXYS

T-IXGD17N100A

Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel

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0 IXYS

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