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T-IXTD7P50 [IXYS]

Power Field-Effect Transistor, 500V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET;

T-IXTD7P50


元器件型号：	T-IXTD7P50
生产厂家：	IXYS CORPORATION
描述和应用：	Power Field-Effect Transistor, 500V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET 晶体管
PDF文件：	总1页 (文件大小：180K)
下载文档：	下载PDF数据表文档文件
型号参数：T-IXTD7P50参数

T-IXTD8P50

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0 IXYS

TI逻辑器件指南(2009.9)中文版.PDF

逻辑器件指南

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56 ETC

TJ02010000J0G

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0 AMPHENOL

TJ02010000J0G

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TJ02010200J0G

Barrier Strip Terminal Block, 20A, 2.5mm2, 1 Row(s), 1 Deck(s), ROHS COMPLIANT

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0 AMPHENOL

TJ02010200J0G

Barrier Strip Terminal Block, 20A, 2.5mm2, 1 Row(s), 1 Deck(s), ROHS COMPLIANT

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0 AMPHENOL

TJ02015000J0G

Barrier Strip Terminal Block, 20A, 1 Row(s), 1 Deck(s), ROHS COMPLIANT

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0 AMPHENOL

TJ02015200J0G

Barrier Strip Terminal Block, 20A, 2.5mm2, 1 Row(s), 1 Deck(s), ROHS COMPLIANT

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0 AMPHENOL

TJ02015200J0G

Barrier Strip Terminal Block, 20A, 2.5mm2, 1 Row(s), 1 Deck(s), ROHS COMPLIANT

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0 AMPHENOL

TJ02315300J0G

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0 AMPHENOL

TJ02315300J0G

Barrier Strip Terminal Block,

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0 AMPHENOL

TJ02318200J0G

Barrier Strip Terminal Block,

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0 AMPHENOL

TJ02318300J0G

Barrier Strip Terminal Block,

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0 AMPHENOL

TJ02318300J0G

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0 AMPHENOL

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