TO-220AB [IXYS]
High Performance Schottky Diode; 高性能肖特基二极管
| 型号： | TO-220AB |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Performance Schottky Diode |
| 文件： | 总2页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSA 20 C 150PB
advanced
VRRM
=
150 V
10 A
Schottky
IFAV = 2x
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
VF = 0.74 V
1
2
3
(Marking on product)
Part number
DSA 20 C 150PB
Features / Advantages:
Applications:
Package:
● Very low Vf
● Extremely low switching losses
● Low Irm-values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
TO-220AB
● Industry standard outline
● Epoxy meets UL 94V-0
● RoHS compliant
● Low noise switching
● Low losses
R a t i n g s
Unit
Symbol
VRRM
Definition
Conditions
min.
typ.
max.
max. repetitive reverse voltage
=
=
25 °C
25 °C
150
V
TVJ
reverse current
forward voltage
IR
VR = 150 V
VR = 150 V
0.3
3
TVJ
TVJ
mA
mA
= 125 °C
IF
IF
=
=
10 A
20 A
0.88
0.99
VF
V
V
TVJ
TVJ
=
=
25 °C
IF
IF
=
=
10 A
20 A
0.74
0.86
V
V
125
°C
average forward current
threshold voltage
IFAV
rectangular, d = 0.5
TC = 150 °C
TVJ = 175 °C
10
A
V
V
0.55
11.5
F0
for power loss calculation only
slope resistance
r F
m
Ω
thermal resistance junction to case
virtual junction temperature
total power dissipation
RthJC
TVJ
2.60
175
60
K/W
°C
-55
Ptot
=
25 °C
W
TC
max. forward surge current
junction capacitance
IFSM
CJ
tp = 10 ms (50 Hz), sine
TVJ
TVJ
TVJ
=
=
=
45 °C
25°C
25 °C
80
A
pF
mJ
A
VR =
IAS
V; f = 1 MHz
non-repetitive avalanche energy
repetitive avalanche current
EAS
IAR
=
A; L = 100 µH
tbd
tbd
V = 1.5·V typ.;
f = 10 kHz
A
R
IXYS reserves the right to change limits, conditions and dimensi
Data according to IEC 60747and per diode unless otherwise specified
© 2005 IXYS all rights reserved
DSA 20 C 150PB
advanced
Ratings
Symbol
Definition
Conditions
min.
typ.
max.
Unit
A
RMS current
IRMS
per pin*
35
thermal resistance case to heatsink
RthCH
MD
0.50
K/W
mounting torque
0.4
20
0.6
60
Nm
N
mounting force with clip
F C
storage temperature
Tstg
-55
150
°C
g
Weight
2
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines
TO-220AB
M
C
Dim. Millimeter
Min. Max.
Inches
Min. Max.
N
A
B
12.70 13.97
14.73 16.00
0.500 0.550
0.580 0.630
C
D
9.91 10.66
3.54 4.08
0.390 0.420
0.139 0.161
E
F
5.85 6.85
2.54 3.18
0.230 0.270
0.100 0.125
G
G
H
1.15 1.65
2.79 5.84
0.045 0.065
0.110 0.230
J
K
0.64 1.01
2.54 BSC
0.025 0.040
0.100 BSC
J
M
N
4.32 4.82
1.14 1.39
0.170 0.190
0.045 0.055
Q
R
K
Q
R
0.35 0.56
2.29 2.79
0.014 0.022
0.090 0.110
L
IXYS reserves the right to change limits, conditions and dimensi
Data according to IEC 60747and per diode unless otherwise specified
© 2005 IXYS all rights reserved
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