VBO125-14NO7 概述
Single Phase Rectifier Bridge 单相整流桥
VBO125-14NO7 数据手册
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PDF下载VBO 125
IdAVM = 124 A
VRRM = 1200-1800 V
Single Phase
Rectifier Bridge
-
+
+
VRSM
V
VRRM
V
Type
~
~
~
900
1200
1400
1600
1800
800
VBO 125-08NO7
VBO 125-12NO7
VBO 125-14NO7
VBO 125-16NO7
VBO 125-18NO7
1200
1400
1600
1800
–
~
Symbol
IdAVM
Conditions
Maximum Ratings
Features
• Package with screw terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 72873
TC = 85°C, module
124
A
IFSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1800
1950
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1600
1800
A
A
I2t
TVJ = 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
16200
16000
A2s
A2s
Applications
VR = 0
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
12800
13600
A2s
A2s
• Field supply for DC motors
TVJ
TVJM
Tstg
-40...+150
150
-40...+150
°C
°C
°C
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improvedtemperatureandpowercycling
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
Md
Mounting torque (M5)
5
15%
44 15%
15%
Nm
lb.in.
Nm
Dimensions in mm (1 mm = 0.0394")
Terminal connection torque (M5)
5
44 15%
lb.in.
Weight
typ.
225
g
Symbol
IR
Conditions
Characteristic Values
VR = VRRM
;
;
TVJ = 25°C
TVJ = TVJM
≤
≤
0.3
8.0
mA
mA
VR = VRRM
VF
IF = 150 A;
TVJ = 25°C
≤
1.3
V
VT0
rT
For power-loss calculations only
TVJ = TVJM
0.8
3
V
mΩ
RthJC
RthJK
per diode; 180°
per module; 180°
per diode; 180°
per module; 180°
0.83
0.138
1.13
K/W
K/W
K/W
K/W
0.188
Data according to IEC 60747 refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
1 - 2
VBO 125
I
I
5
F(OV)
FSM
200
A
------
10
I
(A)
FSM
2
As
TVJ=45°C
TVJ=150°C
1600
1.6
1.4
1.2
1
1800
160
T=150°C
120
80
TVJ=45°C
4
10
TVJ=150°C
0 V
RRM
0.8
0.6
1/2 V
1 V
RRM
40
T=25°C
RRM
I
F
3
10
0
0.4
10
1
2
4
6
10
1
1.5
V
0
1
2
3
V
10 t[ms] 10
10
t [ms]
F
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per diode
IFSM: Crest value. t: duration
Fig. 3 ∫
i2dt versus time
(1-10ms) per diode or thyristor
300
[W]
TC
150
[A]
85
DC
0.19 0.11
0.28
= RTHCA [K/W]
sin.180°
rec.120°
rec.60°
rec.30°
90
250
200
150
95
100
105
110
115
120
125
130
135
140
145
100
50
0.44
0.77
1.77
100
DC
I
dAV
0
sin.180°
rec.120°
50
50
100
150
200
F4
rec.60°
T (°C)
C
rec.30°
PVTOT
°C
150
0
50
100
0
50
100
150
IFAVM
[A]
Tamb
[K]
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig.5 Maximum forward current
at case temperature
1.5
K/W
Z
thJK
Z
1
thJC
0.5
Z
th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
2 - 2
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