VBO125-14NO7

更新时间:2024-09-18 05:45:29
品牌:IXYS
描述:Single Phase Rectifier Bridge

VBO125-14NO7 概述

Single Phase Rectifier Bridge 单相整流桥

VBO125-14NO7 数据手册

通过下载VBO125-14NO7数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

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VBO 125  
IdAVM = 124 A  
VRRM = 1200-1800 V  
Single Phase  
Rectifier Bridge  
-
+
+
VRSM  
V
VRRM  
V
Type  
~
~
~
900  
1200  
1400  
1600  
1800  
800  
VBO 125-08NO7  
VBO 125-12NO7  
VBO 125-14NO7  
VBO 125-16NO7  
VBO 125-18NO7  
1200  
1400  
1600  
1800  
~
Symbol  
IdAVM  
Conditions  
Maximum Ratings  
Features  
• Package with screw terminals  
• Isolation voltage 3000 V~  
• Planar passivated chips  
• Blocking voltage up to 1800 V  
• Low forward voltage drop  
• UL registered E 72873  
TC = 85°C, module  
124  
A
IFSM  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1800  
1950  
A
A
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1600  
1800  
A
A
I2t  
TVJ = 45°C  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
16200  
16000  
A2s  
A2s  
Applications  
VR = 0  
• Supplies for DC power equipment  
• Input rectifiers for PWM inverter  
• Battery DC power supplies  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
12800  
13600  
A2s  
A2s  
• Field supply for DC motors  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+150  
°C  
°C  
°C  
Advantages  
• Easy to mount with two screws  
• Space and weight savings  
• Improvedtemperatureandpowercycling  
VISOL  
50/60 Hz, RMS  
IISOL 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
Md  
Mounting torque (M5)  
5
15%  
44 15%  
15%  
Nm  
lb.in.  
Nm  
Dimensions in mm (1 mm = 0.0394")  
Terminal connection torque (M5)  
5
44 15%  
lb.in.  
Weight  
typ.  
225  
g
Symbol  
IR  
Conditions  
Characteristic Values  
VR = VRRM  
;
;
TVJ = 25°C  
TVJ = TVJM  
0.3  
8.0  
mA  
mA  
VR = VRRM  
VF  
IF = 150 A;  
TVJ = 25°C  
1.3  
V
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
0.8  
3
V
mΩ  
RthJC  
RthJK  
per diode; 180°  
per module; 180°  
per diode; 180°  
per module; 180°  
0.83  
0.138  
1.13  
K/W  
K/W  
K/W  
K/W  
0.188  
Data according to IEC 60747 refer to a single diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2003 IXYS All rights reserved  
1 - 2  
VBO 125  
I
I
5
F(OV)  
FSM  
200  
A
------  
10  
I
(A)  
FSM  
2
As  
TVJ=45°C  
TVJ=150°C  
1600  
1.6  
1.4  
1.2  
1
1800  
160  
T=150°C  
120  
80  
TVJ=45°C  
4
10  
TVJ=150°C  
0 V  
RRM  
0.8  
0.6  
1/2 V  
1 V  
RRM  
40  
T=25°C  
RRM  
I
F
3
10  
0
0.4  
10  
1
2
4
6
10  
1
1.5  
V
0
1
2
3
V
10 t[ms] 10  
10  
t [ms]  
F
Fig. 1 Forward current versus  
voltage drop per diode  
Fig. 2 Surge overload current per diode  
IFSM: Crest value. t: duration  
Fig. 3 ∫  
i2dt versus time  
(1-10ms) per diode or thyristor  
300  
[W]  
TC  
150  
[A]  
85  
DC  
0.19 0.11  
0.28  
= RTHCA [K/W]  
sin.180°  
rec.120°  
rec.60°  
rec.30°  
90  
250  
200  
150  
95  
100  
105  
110  
115  
120  
125  
130  
135  
140  
145  
100  
50  
0.44  
0.77  
1.77  
100  
DC  
I
dAV  
0
sin.180°  
rec.120°  
50  
50  
100  
150  
200  
F4  
rec.60°  
T (°C)  
C
rec.30°  
PVTOT  
°C  
150  
0
50  
100  
0
50  
100  
150  
IFAVM  
[A]  
Tamb  
[K]  
Fig. 4 Power dissipation versus direct output current and ambient temperature  
Fig.5 Maximum forward current  
at case temperature  
1.5  
K/W  
Z
thJK  
Z
1
thJC  
0.5  
Z
th  
0.01  
0.1  
1
10  
t[s]  
Fig. 6 Transient thermal impedance per diode or thyristor, calculated  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2003 IXYS All rights reserved  
2 - 2  

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