概述
数据手册VBO30-18NO7 概述
Single Phase Rectifier Bridge 单相整流桥
VBO30-18NO7 数据手册
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PDF下载VBO 30
IdAVM = 35 A
VRRM = 1200-1800 V
Single Phase
Rectifier Bridge
+
-
+
VRSM
V
VRRM
V
Type
~
~
800
1200
1400
1600
1800
800
1200
1400
1600
1800
VBO 30-08NO7
VBO 30-12NO7
VBO 30-14NO7
VBO 30-16NO7
VBO 30-18NO7*
~
~
–
* delivery time on request
Symbol
IdAVM
Conditions
Maximum Ratings
Features
• Package with screw terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 72873
TC = 85°C, module
35
A
IFSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
400
440
A
A
T
VJ = TVJM
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
360
400
A
A
VR = 0
I2t
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
800
810
A2s
A2s
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
650
670
A2s
A2s
• Field supply for DC motors
TVJ
TVJM
Tstg
-40...+150
150
-40...+150
°C
°C
°C
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improvedtemperatureandpowercycling
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
Md
Mounting torque (M4)
1.5 15%
Nm
Dimensions in mm (1 mm = 0.0394")
13 15% lb.in.
1.5 15% Nm
13 15% lb.in.
Terminal connection torque (M4)
Weight
typ.
135
g
Symbol
IR
Conditions
Characteristic Values
VR = VRRM
;
;
TVJ = 25°C
TVJ = TVJM
≤
≤
0.3
5.0
mA
mA
VR = VRRM
VF
IF = 150 A;
TVJ = 25°C
≤
2.2
V
VT0
rT
For power-loss calculations only
TVJ = TVJM
0.85
12
V
mΩ
RthJC
RthJK
per diode; DC current
per module
per diode; DC current
per module
2.8
0.7
3.4
K/W
K/W
K/W
K/W
0.85
Data according to IEC 60747 refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1 - 2
VBO 30
3
I
10
200
[A]
F(OV)
------
I
FSM
1:T = 150°C
VJ
I
(A)
FSM
2
As
TVJ=45°C
400
TVJ=150°C
360
2:T = 25°C
VJ
1.6
1.4
150
100
50
TVJ=45°C
TVJ=150°C
1.2
1
0 V
RRM
0.8
1/2 V
RRM
1 V
RRM
0.6
0.4
I
F
1
2
2
10
0
1
2
4
6
10
0
1
2
3
10
2.5
1.0
2.0
V [V]
3.0
1.5
10
10
t[ms] 10
t [ms]
F
Fig. 3 ∫i2dt versus time
Fig. 2 Surge overload current per diode
IFSM: Crest value. t: duration
Fig. 1 Forward current versus
voltage drop per diode
(1-10ms) per diode or thyristor
40
[A]
TC
55
[W]
DC
60
0.290.01 = RTHCA [K/W]
80
60
40
sin.180°
rec.120°
rec.60°
rec.30°
65
0.57
70
75
30
20
10
80
85
1.12
2.23
5.57
90
95
100
105
110
115
120
125
130
135
140
DC
sin.180°
rec.120°
20
rec.60°
rec.30°
I
dAV
0
145
°C
150
PVTOT
0
0
[A]
50
100
150
50
100
150
200
10
IFAVM
30
Tamb
[K]
T (°C)
C
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig.5 Maximum forward current
at case temperature
5
K/W
4
Z
thJC
3
2
Z
thJK
1
Z
th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
2 - 2
VBO30-18NO7 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| VBO36 | IXYS | Single Phase Rectifier Bridge | 获取价格 |
|
| VBO36-08NO8 | IXYS | Bridge Rectifier Diode, 3 Phase, 30A, 800V V(RRM), Silicon, | 获取价格 |
|
| VBO36-08NO8 | LITTELFUSE | 采用各种封装的二极管，用于1相桥配置中的主整流。 | 获取价格 |
|
| VBO36-12NO7 | IXYS | Bridge Rectifier Diode, 1 Phase, 30A, 1200V V(RRM), Silicon, | 获取价格 |
|
| VBO36-12NO8 | IXYS | Bridge Rectifier Diode, 3 Phase, 30A, 1200V V(RRM), Silicon, | 获取价格 |
|
| VBO36-12NO8 | LITTELFUSE | 采用各种封装的二极管，用于1相桥配置中的主整流。 | 获取价格 |
|
| VBO36-14NO7 | IXYS | Bridge Rectifier Diode, 1 Phase, 30A, 1400V V(RRM), Silicon, | 获取价格 |
|
| VBO36-14NO8 | IXYS | Bridge Rectifier Diode, 3 Phase, 30A, 1400V V(RRM), Silicon, | 获取价格 |
|
| VBO36-16NO8 | IXYS | Bridge Rectifier Diode, 3 Phase, 30A, 1600V V(RRM), Silicon, | 获取价格 |
|
| VBO36-16NO8 | LITTELFUSE | 采用各种封装的二极管，用于1相桥配置中的主整流。 | 获取价格 |
|
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