VBO52-12NO7 [IXYS]
Standard Rectifier Module; 标准的整流模块
| 型号： | VBO52-12NO7 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Standard Rectifier Module |
| 文件： | 总5页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VBO52-12NO7
1~
Rectifier
Standard Rectifier Module
VRRM
V
= 1200
IDAV
60 A
=
=
IFSM
550 A
1~ Rectifier Bridge
Part number
VBO52-12NO7
-
~
~
+
PWS-D
Package:
Features / Advantages:
Applications:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● Industry standard outline
● RoHS compliant
● Easy to mount with two screws
● Base plate: Copper
● For one phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
internally DCB isolated
● Field supply for DC motors
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130415a
© 2013 IXYS all rights reserved
VBO52-12NO7
Ratings
Rectifier
Conditions
Symbol
VRSM
Definition
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
1300
1200
40
V
V
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
VRRM
IR
reverse current
VR = 1200 V
VR = 1200 V
µA
1.5 mA
forward voltage drop
VF
20
1.07
V
V
V
V
A
IF =
A
1.19
0.96
1.13
60
IF = 40 A
IF = 20 A
IF = 40 A
TC = 115°C
rectangular
TVJ
=
°C
125
bridge output current
TVJ = 150°C
TVJ = 150°C
IDAV
d = 0.5
VF0
0.78
V
threshold voltage
slope resistance
for power loss calculation only
rF
8.1 mΩ
1.1 K/W
K/W
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
Ptot
0.4
TC = 25°C
TVJ = 45°C
VR = 0 V
110
550
595
470
505
W
A
A
A
A
total power dissipation
max. forward surge current
IFSM
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V; f = 1 MHz
TVJ = 150°C
VR = 0 V
value for fusing
I²t
TVJ = 45°C
VR = 0 V
1.52 kA²s
1.48 kA²s
1.11 kA²s
1.06 kA²s
pF
TVJ = 150°C
VR = 0 V
CJ
TVJ = 25°C
19
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130415a
© 2013 IXYS all rights reserved
VBO52-12NO7
Ratings
Package PWS-D
Symbol
IRMS
Definition
Conditions
per terminal
min. typ. max.
150
Unit
A
°C
°C
g
RMS current
Tstg
-40
-40
125
150
storage temperature
virtual junction temperature
TVJ
Weight
153
MD
4.25
4.25
9.5
5.75 Nm
mounting torque
terminal torque
M
5.75 Nm
T
terminal to terminal
terminal to backside
dSpp/App
dSpb/Apb
mm
mm
V
creepage distance on surface | striking distance through air
26.0
3000
2500
t = 1 second
V
isolation voltage
ISOL
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
V
Circuit
Made in Germany
Diagram
Product
Number
YYCW Lot#
Date Code
XXXX-XXXX
Ordering
Standard
Part Number
Marking on Product
VBO52-12NO7
Delivery Mode
Box
Quantity Code No.
10 472344
VBO52-12NO7
TVJ = 150°C
* on die level
Equivalent Circuits for Simulation
Rectifier
V0
I
R0
threshold voltage
slope resistance *
V0 max
R0 max
0.78
6.9
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130415a
© 2013 IXYS all rights reserved
VBO52-12NO7
Outlines PWS-D
-
~
~
+
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130415a
© 2013 IXYS all rights reserved
VBO52-12NO7
Rectifier
500
400
100
10000
50 Hz
VR = 0 V
0.8 x V RRM
80
I2t
60
IF
IFSM
TVJ = 45°C
TVJ = 45°C
1000
[A]
[A]
[A2s]
40
TVJ = 150°C
300
200
TVJ = 150°C
TVJ
=
20
125°C
150°C
TVJ = 25°C
1.2
0
0.4
100
0.001
0.010
0.100
1.000
0.8
1.6
1
10
t [ms]
VF [V]
t [s]
Fig. 3 I2t vs. time per diode
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
30
20
10
0
100
80
RthJA
:
DC =
1
0.5
DC =
1
0.6 KW
0.8 KW
0.4
1
2
4
8
KW
KW
KW
KW
0.5
0.33
0.17
0.08
0.4
60
0.33
0.17
0.08
Ptot
[W]
IF(AV)M
40
20
0
Graph 1*
[A]
0
10
20
IdAVM [A]
0
25
50
75 100 125 150 175
0
25 50 75 100 125 150
TA [°C]
TC [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
1.2
0.8
Constants for ZthJC calculation:
i
Rth (K/W)
ti (s)
ZthJC
1
2
3
4
5
0.05
0.14
0.25
0.35
0.31
0.001
0.030
0.060
0.130
0.920
[K/W]
0.4
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130415a
© 2013 IXYS all rights reserved
相关型号：
VBO54-08NO7
Bridge Rectifier Diode, 1 Phase, 54A, 800V V(RRM), Silicon, ROHS COMPLIANT, ECOPAC-4
IXYS
VBO54-12NO7
Bridge Rectifier Diode, 1 Phase, 54A, 1200V V(RRM), Silicon, ROHS COMPLIANT, ECOPAC-4
IXYS
VBO54-16NO7
Bridge Rectifier Diode, 1 Phase, 54A, 1600V V(RRM), Silicon, ROHS COMPLIANT, ECOPAC-4
IXYS
©2020 ICPDF网 联系我们和版权申明