VCK105-18IO7 [IXYS]
Silicon Controlled Rectifier, 180A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 2 Element, ECOPAC-11;
| 型号： | VCK105-18IO7 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Silicon Controlled Rectifier, 180A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 2 Element, ECOPAC-11 局域网 栅 栅极 |
| 文件： | 总2页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VCK 105
ITRMS = 2x180A
ITAVM = 2x105A
Thyristor Modules
ECO-PAC 2
VRRM = 800-1800 V
Preliminary Data
VRSM
VDSM
V
VRRM
VDRM
V
Typ
900
1300
1500
1700
1900
800
1200
1400
1600
1800
VCK 105 - 08io7
VCK 105 - 12io7
VCK 105 - 14io7
VCK 105 - 16io7
VCK 105 - 18io7
Symbol
Conditions
MaximumRatings
Features
• Isolation voltage 3600 V~
• Planar glass passivated chips
• Low forward voltage drop
ITRMS
ITAVM
180
105
A
A
TC = 85°C; 180° sine
• Leads suitable for PC board soldering
ITSM
TVJ = 45°C; VR = 0 V; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
2250
2400
A
A
Applications
TVJ = 125°C; VR = 0 V; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
2000
2150
A
A
• DC motor control
• Light and temperature control
• Softstart AC motor controller
• Solid state switches
I2dt
TVJ = 45°C; VR = 0 V; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
25300
23900
A2s
A2s
TVJ = 125°C; VR = 0 V; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
20000
19100
A2s
A2s
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling
• High power density
• Small and light weight
(di/dt)cr
TVJ = 125°C;
repetitive, IT = 250 A
150
A/µs
f = 50 Hz; tP = 200 µs;
VD = 2/3VDRM
IG = 0.45 A
;
non repetitive, IT = ITAVM
500
A/µs
V/µs
diG/dt = 0.45 A/µs;
(dv/dt)cr
PGM
TVJ = 125°C; VDR = 2/3VDRM
1000
RGK = ∞, method 1 (linear voltage rise)
TVJ = 125°C;
IT = ITAVM
tP = 30 ms
tP = 300 ms
≤ 10
≤ 5
W
W
;
PGAVM
VRGM
0.5
10
W
V
TVJ
TVJM
Tstg
-40 ... + 125
125
-40 ... + 125
°C
°C
°C
VISOL
50/60 Hz, RMS
IISOL < 1 mA
t = 1 min
t = 1 s
3000
3600
V ~
V ~
Md
Mounting torque
(M4)
1.5 - 2.0
14 - 18
Nm
lb.in.
Weight
typ.
26
g
Data according to IEC 60747 refer to a single thyristor unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
1 - 2
VCK 105
Component
Symbol
Conditions
CharacteristicValues
min.
typ. max.
ID, IR
VT
TVJ = 125°C; VR = VRRM; VD = VDRM
IT = 300 A; TVJ = 25°C
5
1.5
0.8
mA
V
VTO
rT
For power-loss calculations only
V
2.4 mΩ
VGT
VD = 6 V;
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
1.5
1.6
V
V
IGT
TVJ = 25°C
TVJ = -40°C
150 mA
200 mA
VGD
IGD
TVJ = 125°C; VD = 2/3VDRM
TVJ = 125°C; VD = 2/3VDRM
0.2
10 mA
V
IL
TVJ = 25°C; tP = 10 ms
450 mA
IG = 0.45 A; diG/dt = 0.45 A/µs
IH
TVJ = 25°C; VD = 6 V; RGK = ∞
200 mA
tgd
TVJ = 25°C; VD = ½ VDRM
2
µs
IG = 0.45 A; diG/dt = 0.45 A/µs
RthJC
RthCH
per Thyristor; DC
permodule
per Thyristor; DC
permodule
0.26 K/W
0.13 K/W
K/W
0,2
0,1
K/W
dS
dA
a
Creeping distance on surface
Creeping distance in air
Max.allowableacceleration
11.2 mm
5.0 mm
50 m/s2
Dimensions in mm (1 mm = 0.0394")
2 - 2
© 2001 IXYS All rights reserved
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