VHFD37 [IXYS]
Half Controlled Single Phase Rectifier Bridge Including Freewheeling Diode and Field Diodes;
| 型号： | VHFD37 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Half Controlled Single Phase Rectifier Bridge Including Freewheeling Diode and Field Diodes |
| 文件： | 总3页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VHFD 37
VRRM = 800-1600 V
IdAVM = 40 A
Half Controlled
Single Phase Rectifier Bridge
Including Freewheeling Diode and Field Diodes
VRSM
VDSM
VRRM
VDRM
Type
5
3
2
1
V
V
900
1300
1700
800
1200
1600
VHFD 37-08io1
VHFD 37-12io1
VHFD 37-16io1
10
8
6
Bridge and Freewheeling Diode
Symbol
Conditions
Maximum Ratings
Features
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
Package with DCB ceramic base plate
Isolation voltage 3600 V~
Planar passivated chips
Blocking voltage up to 1600 V
Low forward voltage drop
IdAV
IdAVM ꢀ
TH = 85°C, module
module
per leg
36
40
31
A
A
A
I
FRMS, ITRMS
IFSM, ITSM
TVJ = 45°C;
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
320
350
A
A
Leads suitable for PC board soldering
UL registered E 72873
TVJ = TVJM
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
280
310
A
A
Applications
I2t
TVJ = 45°C
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
500
520
A2s
A2s
ꢁ
Supply for DC power equipment
DC motor control
ꢁ
TVJ = TVJM
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
390
400
A2s
A2s
Advantages
ꢁ
Easy to mount with two screws
Space and weight savings
Improved temperature and power
(di/dt)cr
TVJ = 125°C
repetitive, IT = 50 A
150
A/μs
ꢁ
f = 50 Hz, tP = 200 μs
VD = 2/3 VDRM
IG = 0.3 A,
ꢁ
cycling
non repetitive, IT = 0.5 IdAV
500
1000
10
A/μs
V/μs
V
diG/dt = 0.3 A/μs
Dimensions in mm (1 mm = 0.0394")
(dv/dt)cr
TVJ = T(vj)m; VDR = 2/3 VDRM
RGK = ∞; method 1 (linear voltage rise)
VRGM
PGM
TVJ = TVJM
IT = 0.5 IdAVM
tp = 30 μs
tp = 500 μs
tp = 10 ms
≤
≤
≤
10
5
1
W
W
W
W
PGAVM
0.5
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
°C
°C
°C
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t = 1 s
3000
3600
V~
V~
dS
dA
a
Creep distance on surface
Strike distance in air
Max. allowable acceleration
12.7
9.4
50
mm
mm
m/s2
Md
Mounting torque
(M5)
(10-32 UNF)
2-2.5
18-22
35
Nm
lb.in.
g
Weight
IXYS reserves the right to change limits, test conditions and dimensions.
20100705a
© 2010 IXYS All rights reserved
1 - 3
VHFD 37
Symbol
IR, ID
Conditions
Characteristic Values
10
V
1: I
GT, TVJ = 125°C
VR = VRRM; VD = VDRM TVJ = TVJM
≤
≤
5
mA
2: IGT, TVJ 25°C
=
TVJ = 25°C
0.3 mA
3: IGT, TVJ = -40°C
VG
VT, VF
IT, IF = 45 A; TVJ = 25°C
≤
1.45
0.85
V
V
VT0
rT
For power-loss calculations only (TVJ = 125°C)
3
13 mΩ
2
1
6
1
VGT
IGT
VD = 6 V;
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
TVJ = 125°C
≤
≤
≤
≤
≤
1.0
1.2
65 mA
80 mA
50 mA
V
V
5
4
4: P
GAV = 0.5 W
1 W
6: PGM = 10 W
VGD
IGD
TVJ = TVJM
TVJ = TVJM
;
;
VD = 2/3 VDRM
VD = 2/3 VDRM
≤
≤
0.2
5
V
mA
5: PGM
=
I
GD, TVJ = 125°C
0.1
IL
IG = 0.3 A; tG = 30 μs; TVJ = 25°C
diG/dt = 0.3 A/μs;
≤
≤
≤
150 mA
200 mA
100 mA
1
10
100
1000
IG
mA
TVJ = -40°C
TVJ = 125°C
Fig. 1 Gate trigger range
IH
TVJ = 25°C; VD = 6 V; RGK = ∞
≤
≤
100 mA
1000
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 0.3 A; diG/dt = 0.3 A/μs
2
μs
T
VJ = 25°C
μs
tq
Qr
TVJ = 125°C, IT = 15 A, tP = 300 μs, VR = 100 V
di/dt = -10 A/μs, dv/dt = 20 V/μs, VD = 2/3 VDRM
typ.
150
75
μs
μC
tgd
typ.
Limit
100
10
1
RthJC
RthJH
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
1.2 K/W
0.3 K/W
1.55 K/W
0.39 K/W
Field Diodes
Symbol
Conditions
Maximum Ratings
IFAV
IFAVM
IFRMS
TH = 85°C, per Diode
per diode
per diode
4
4
6
A
A
A
10
100
mA 1000
IG
IFSM
TVJ = 45°C;
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
100
110
A
A
Fig. 2 Gate controlled delay time tgd
TVJ = TVJM
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
85
94
A
A
I2t
TVJ = 45°C
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
50
50
A2s
A2s
TVJ = TVJM
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
36
37
A2s
A2s
IR
VR = VRRM
TVJ = TVJM
1
mA
TVJ = 25°C
0.15 mA
VF
IF = 21 A; TVJ = 25°C
1.83
V
VT0
rT
For power-loss calculations only (TVJ = 125°C)
0.9
50 mΩ
V
RthJC
RthJH
per diode; DC current
per diode; DC current
4.4 K/W
5.2 K/W
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
for resistive load
ꢀ
IXYS reserves the right to change limits, test conditions and dimensions.
20100705a
© 2010 IXYS All rights reserved
2 - 3
VHFD 37
70
A
300
A
103
A2s
50Hz, 80% VRRM
VR = 0 V
60
250
IFSM
typ.
I2t
IF
TVJ = 45°C
50
40
30
20
10
0
TVJ = 45°C
200
150
100
50
max.
TVJ = 125°C
TVJ 25°C
TVJ = 125°C
=
102
TVJ = 125°C
0
101
0.0
0.5
1.0
1.5
2.0
0.001
0.01
0.1
s
1
1
2
3
4
5 6 7 10
ms
V
t
VF
t
Fig. 3 Forward current vs. voltage
drop per diode
Fig. 4 Surge overload current
Fig. 5 I2t versus time per diode
120
W
50
A
RthHA
:
100
40
Id(AV)M
0.5 K/W
1.0 K/W
1.5 K/W
2.0 K/W
3.0 K/W
4.0 K/W
6.0 K/W
Ptot
80
60
40
20
0
30
20
10
0
0
10
20
30
40
IF(AV)M
A
0
20 40 60 80 100 120 °C
Tamb
0
20 40 60 80 100 120 °C
TH
Fig. 6 Power dissipation vs. direct output current and ambient temperature
Fig. 7 Max. forward current vs.
heatsink temperature
2.0
K/W
1.5
ZthJH
1.0
0.5
0.0
Constants for ZthJH calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.005
0.2
0.875
0.47
0.008
0.05
0.06
0.25
0.001
0.01
0.1
1
s
10
t
Fig. 8 Transient thermal impedance junction to heatsink
IXYS reserves the right to change limits, test conditions and dimensions.
20100705a
© 2010 IXYS All rights reserved
3 - 3
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