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VID75-12P1 [IXYS]

IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA; IGBT模块在ECO- PAC 2短路SOA能力广场RBSOA
VID75-12P1
型号： VID75-12P1
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA
IGBT模块在ECO- PAC 2短路SOA能力广场RBSOA

双极性晶体管
文件： 总4页 (文件大小：125K)
中文：  中文翻译
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VDI75-12P1 VII 75-12P1  
VID75-12P1 VIO75-12P1  
IC25  
VCES  
= 92 A  
= 1200 V  
IGBT Modules in ECO-PAC 2  
Short Circuit SOA Capability  
VCE(sat) typ. = 2.7 V  
Square RBSOA  
Preliminary data sheet  
VII  
VIO  
VDI  
VID  
L9  
X15  
L9  
X13  
NTC  
X15  
NTC  
X16  
E2  
A
S
X15  
L9  
F1  
T16  
B3  
NTC  
X16  
K10  
Pin arangement see outlines  
X16  
Features  
IGBTs  
• NPT IGBT's  
Symbol  
VCES  
Conditions  
Maximum Ratings  
1200  
- positive temperature coefficient of  
saturation voltage  
- fast switching  
TVJ = 25°C to 150°C  
V
±
VGES  
20  
V
• FRED diodes  
- fast reverse recovery  
- low forward voltage  
IC25  
IC80  
TC = 25°C  
TC = 80°C  
92  
62  
A
A
• Industry Standard Package  
- solderable pins for PCB mounting  
- isolated DCB ceramic base plate  
ICM  
VCEK  
VGE = ±15 V; RG = 22 Ω; TVJ = 125°C  
RBSOA, Clamped inductive load; L = 100 µH  
100  
VCES  
A
µs  
W
tSC  
(SCSOA)  
VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C  
non-repetitive  
10  
Advantages  
• space and weight savings  
• reduced protection circuits  
Ptot  
TC = 25°C  
379  
• leads with expansion bend for stress relief  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
Typical Applications  
min.  
typ. max.  
• AC and DC motor control  
• AC servo and robot drives  
• power supplies  
VCE(sat)  
IC = 75 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.7  
3.0  
3.2  
V
V
• welding inverters  
VGE(th)  
ICES  
IC = 2 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES  
;
VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
3.7 mA  
12.5 mA  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
200 nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
100  
70  
500  
70  
9.1  
6.7  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 60 A  
VGE = 15/0 V; RG = 22 Ω  
Cies  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
3.3  
nF  
RthJC  
RthJH  
(per IGBT)  
with heatsink compound (0.42 K/m.K; 50 µm)  
0.33 K/W  
K/W  
0.66  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2003 IXYS All rights reserved  
1 - 4  
VDI75-12P1 VII 75-12P1  
VID75-12P1 VIO75-12P1  
Reverse diodes (FRED)  
Symbol  
Conditions  
Maximum Ratings  
IF25  
IF80  
TC = 25°C  
TC = 80°C  
103  
65  
A
A
Symbol  
VF  
Conditions  
Characteristic Values  
min. typ. max.  
IF = 60 A; TVJ = 25°C  
TVJ = 125°C  
2.28  
1.67  
2.6  
V
V
IRM  
trr  
IF = 60 A; di /dt = 500 A/µs; TVJ = 125°C  
VR = 600 V;FVGE = 0 V  
41  
200  
A
ns  
RthJC  
RthJH  
0.66 K/W  
K/W  
B3  
with heatsink compound (0.42 K/m.K; 50 µm)  
1.32  
Temperature Sensor NTC  
Symbol  
Conditions  
Characteristic Values  
min. typ. max.  
VIO  
R25  
T = 25°C  
4.75  
5.0  
5.25 kΩ  
B25/50  
3375  
K
Module  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
-40...+150  
-40...+150  
°C  
°C  
VISOL  
Md  
I
ISOL ≤ 1 mA; 50/60 Hz  
3000  
V~  
mounting torque (M4)  
Max. allowable acceleration  
Conditions  
1.5 - 2.0  
14 - 18  
50  
Nm  
lb.in.  
m/s2  
a
Symbol  
Characteristic Values  
min. typ. max.  
dS  
dA  
Creepage distance on surface (Pin to heatsink)  
Strike distance in air (Pin to heatsink)  
11.2  
11.2  
mm  
mm  
Weight  
24  
g
VID  
VDI  
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2003 IXYS All rights reserved  
2 - 4  
VDI75-12P1 VII 75-12P1  
VID75-12P1 VIO75-12P1  
120  
A
120  
A
VGE =17 V  
15 V  
TJ = 25°C  
TJ = 125°C  
VGE =17 V  
100  
100  
15 V  
13 V  
13 V  
IC  
IC  
80  
60  
40  
20  
0
80  
60  
40  
20  
0
11 V  
11 V  
9 V  
9 V  
81T120  
81T120  
V
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 V  
0,0 0,5 1,0 1,5 2,0 2,5 3,0  
VCE  
B3  
VCE  
Fig. 1 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
180  
120  
A
VCE = 20 V  
TJ = 25°C  
TJ = 125°C  
A
100  
TJ = 25°C  
IF  
IC  
120  
90  
60  
30  
0
80  
60  
40  
20  
0
81T120  
DWLP55-12  
V
0,5  
1,0  
1,5  
2,0  
2,5  
VF  
3,0  
3,5  
5
6
7
8
9
10  
VGE  
11 V  
Fig. 3 Typ. transfer characteristics  
Fig. 4 Typ. forward characteristics of  
free wheeling diode  
20  
V
120  
A
300  
ns  
trr  
15  
IRM  
trr  
VGE  
VCE = 600 V  
80  
40  
0
200  
IC  
= 50 A  
10  
5
TJ = 125°C  
100  
0
VR = 600 V  
IRM  
IF = 50 A  
81T120  
81T120  
0
0
50  
100  
150  
200  
250 nC  
0
200  
400  
600  
A/µs 1000  
-di/dt  
QG  
Fig. 5 Typ. turn on gate charge  
Fig. 6 Typ. turn off characteristics of  
free wheeling diode  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2003 IXYS All rights reserved  
3 - 4  
VDI75-12P1 VII 75-12P1  
VID75-12P1 VIO75-12P1  
24  
mJ  
18  
120  
ns  
12  
600  
mJ  
10  
ns  
500  
Eoff  
td(off)  
90  
60  
30  
0
Eoff  
Eon  
td(on)  
t
t
8
6
4
2
0
400  
300  
200  
100  
0
VCE = 600 V  
VGE = ±15 V  
RG = 22 Ω  
TJ = 125°C  
12  
6
tr  
VCE = 600 V  
VGE = ±15 V  
RG = 22 Ω  
TJ = 125°C  
Eon  
tf  
81T120  
81T120  
0
0
20  
40  
60  
80  
IC  
100  
A
0
20  
40  
60  
80  
IC  
100  
A
B3  
Fig. 7 Typ. turn on energy and switching  
Fig. 8 Typ. turn off energy and switching  
times versus collector current times  
versus collector current  
20  
240  
ns  
10  
mJ  
8
1500  
ns  
td(off)  
VCE = 600 V  
td(on)  
VCE = 600 V  
GE = ±15 V  
mJ  
VGE = ±15 V  
IC = 50 A  
V
1200  
IC = 50 A  
TJ = 125°C  
Eoff  
15  
10  
5
180  
120  
60  
Eoff  
Eon  
TJ = 125°C  
Eon  
t
t
6
4
2
0
900  
600  
300  
0
tr  
tf  
81T120  
81T120  
0
0
0
10 20 30 40 50 60 70 80 90 100 Ω  
0
10 20 30 40 50 60 70 80 90 100  
RG  
Ω
RG  
Fig. 9 Typ. turn on energy and switching  
Fig. 10 Typ. turn off energy and switching  
times versus gate resistor times  
versus gate resistor  
1
120  
A
K/W  
0,1  
100  
ICM  
ZthJC  
0,01  
80  
60  
40  
20  
0
diode  
IGBT  
RG = 22 Ω  
TJ = 125°C  
VCEK < VCES  
0,001  
0,0001  
single pulse  
VID...75-12P1  
81T120  
0,00001  
0,00001 0,0001 0,001  
0,01  
0,1  
1
s
0
200 400 600 800 1000 1200 V  
VCE  
t
Fig. 11 Reverse biased safe operating area  
Fig. 12 Typ. transient thermal impedance  
RBSOA  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2003 IXYS All rights reserved  
4 - 4  

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