VKI50-06P1 [IXYS]
IGBT Modules - Short Circuit SOA Capability Square RBSOA; IGBT模块 - 短路SOA能力广场RBSOA
| 型号： | VKI50-06P1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | IGBT Modules - Short Circuit SOA Capability Square RBSOA |
| 文件： | 总4页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VKI50-06P1
IC25
VCES
= 42.5 A
= 600 V
IGBT Modules in ECO-PAC 2
Short Circuit SOA Capability
VCE(sat) typ. = 2.4 V
Square RBSOA
Preliminary data sheet
F10
A 1
K10
K13
P18
N 9
A 4
D 4
NTC
H13
X18
B3
L 9
T16
O 7
S18
Pin arangement see outlines
Features
IGBTs
• NPT IGBT technology
• low saturation voltage
• low switching losses
Symbol
VCES
Conditions
Maximum Ratings
600
TVJ = 25°C to 150°C
V
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
±
VGES
20
V
IC25
IC80
TC = 25°C
TC = 80°C
42.5
29
A
A
ICM
VCEK
VGE = ±15 V; RG = 33 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
60
VCES
A
µs
W
tSC
(SCSOA)
VCE = VCES; VGE = ±15 V; RG = 33 Ω; TVJ = 125°C
non-repetitive
10
Advantages
Ptot
TC = 25°C
130
• space savings
• reduced protection circuits
• package designed for wave soldering
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
Typical Applications
VCE(sat)
IC = 50 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.4
2.9
2.9
V
V
• motor control
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
• supply of transformer primary winding
- power supplies
VGE(th)
ICES
IC = 0.7 mA; VGE = VCE
4.5
6.5
V
VCE = VCES
;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.6 mA
1.7 mA
±
IGES
VCE = 0 V; VGE
=
20 V
100 nA
- welding
- X-ray
- UPS
- battery charger
td(on)
tr
td(off)
tf
Eon
Eoff
50
50
270
40
1.4
1.0
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 30 A
VGE = 15/0 V; RG = 33 Ω
Cies
VCE = 25 V; VGE = 0 V; f = 1 MHz
16
nF
RthJC
RthJH
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
0.96 K/W
K/W
1.92
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
1 - 4
VKI50-06P1
Dimensions in mm (1 mm = 0.0394")
Reverse diodes (FRED)
Symbol
Conditions
Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
30
19
A
A
Symbol
VF
Conditions
Characteristic Values
min.
typ. max.
IF = 30 A; TVJ = 25°C
TVJ = 125°C
2.57 2.84
1.8
V
V
IRM
trr
IF = 15 A; di /dt = 400 A/µs; TVJ = 125°C
VR = 300 V;FVGE = 0 V
7
50
A
ns
RthJC
RthJH
2.3 K/W
K/W
B3
with heatsink compound (0.42 K/m.K; 50 µm)
4.6
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min. typ. max.
R25
T = 25°C
455
470
485 kΩ
B25/50
3474
K
Module
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
-40...+150
-40...+150
°C
°C
VISOL
Md
I
ISOL ≤ 1 mA; 50/60 Hz
3000
V~
mounting torque (M4)
Max. allowable acceleration
Conditions
1.5 - 2.0
14 - 18
50
Nm
lb.in.
m/s2
a
Symbol
Characteristic Values
min. typ. max.
dS
dA
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
11.2
11.2
mm
mm
Weight
24
g
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
2 - 4
VKI50-06P1
90
90
A
A
IC
IC
VGE = 17 V
VGE= 17V
60
45
30
15
0
60
45
30
15
0
15 V
13 V
15V
13V
TJ = 25°C
11V
11V
TJ = 125°C
9V
9V
25T60
25T60
V
0
1
2
3
4
5
V
6
0
1
2
3
4
5
6
VCE
VCE
B3
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
90
90
A
60
45
30
15
0
A
IF
VCE = 20V
IC
60
45
30
15
0
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
25T60
25T60
V
0,0
0,5
1,0
1,5
2,0
4
6
8
10
12
14 V 16
VF
VGE
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
50
A
30
20
10
0
150
20
V
1
ns
trr
trr
15
IRM
VGE
90
60
30
0
10
5
TJ = 125°C
VR = 300 V
IF = 30 A
VCE = 300 V
IC
= 30 A
IRM
25T60
25T60
0
nC
0
200
400
600
-di/dt
1000
A/µs
0
40
80
120
QG
160
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
3 - 4
VKI50-06P1
80
ns
60
400
Eoff
8
mJ
6
2,0
mJ
1,5
VCE = 300V
VGE = ±15V
RG = 33Ω
TVJ = 125°C
ns
tr
300
t
Eoff
Eon
td(on)
t
VCE = 300V
GE = ±15V
V
td(off)
Eon
RG = 33Ω
4
2
0
40
20
0
1,0
0,5
0,0
200
TVJ = 125°C
100
tf
25T60
25T60
0
0
20
40
60 A
0
20
40
60
A
IC
IC
B3
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
4
mJ
3
80
ns
2,0
mJ
400
VCE = 300V
VGE = ±15V
IC = 30A
TVJ = 125°C
td(on)
VCE = 300 V
VGE = ±15 V
IC = 30 A
TVJ = 125°C
td(off)
ns
Eoff
Eon
1,5
1,0
0,5
0,0
300
t
t
tr
60
40
20
Eoff
Eon
2
1
0
200
100
0
tf
25T60
25T60
0
10 20 30 40 50 60 70 Ω 80
0
10 20 30 40 50 60 70Ω 80
RG
RG
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
80
A
10
diode
IGBT
K/W
1
60
ZthJC
ICM
0,1
40
20
0
0,01
0,001
single pulse
RG = 33 Ω
TVJ = 125°C
25T60
VDI...50-06P1
0,0001
0,000010,0001 0,001 0,01
0,1
1
10
s
0
100 200 300 400 500 600 700
VCE
V
t
Fig. 11 Reverse biased safe operating area
Fig. 12 Typ. transient thermal impedance
RBSOA
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
4 - 4
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