VTO70-14IO7C [IXYS]
Bridge Rectifier Diode, 70A, 1400V V(RRM),;
| 型号： | VTO70-14IO7C |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Bridge Rectifier Diode, 70A, 1400V V(RRM), 栅极 三相整流桥 触发装置 可控硅整流器 局域网 |
| 文件： | 总2页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VVZ 70 VVZF 70
VTO 70 VTOF 70
Three Phase
IdAV = 70 A
Rectifier Bridge
VRRM = 800-1600 V
Preliminary data
A
A
2
3
1
2
3
1
C
D
E
C
D
E
VRSM
VDSM
VRRM
VDRM
Type
B
A
B
A
V
V
VVZ 70
VVZF 70
800
1200
1400
1600
800
1200
1400
1600
xxx 70-08io7
xxx 70-12io7
xxx 70-14io7
xxx 70-16io7
2
5
2
5
3
4
1
6
3
1
6
C
D
E
C
D
E
4
xxx = type
B
B
VTO 70
VTOF 70
Features
Symbol
Test Conditions
Maximum Ratings
Package with copper base plate
Isolation voltage 3000 V~
Planar passivated chips
Low forward voltage drop
¼" fast-on power terminals
IdAV
IdAVM
IFRMS, ITRMS
¬
¬
TK = 85°C, module
module
per leg
70
70
36
A
A
A
IFSM, ITSM
TVJ = 45°C;
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
550
600
A
A
Applications
TVJ = TVJM
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
500
550
A
A
A2s
A2s
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
I2t
TVJ = 45°C
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1520
1520
T
VJ = TVJM
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1250
1250
A2s
A2s
F2
Advantages
VR = 0 V
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
(di/dt)cr
TVJ = 125°C
repetitive, IT = 50 A
150
A/µs
f = 50 Hz, tP = 200 µs
VD = 2/3 VDRM
IG = 0.3 A,
non repetitive, IT = 1/2 IdAV
500
1000
10
A/µs
V/µs
V
Small and light weight
diG/dt = 0.3 A/µs
(dv/dt)cr
TVJ = TVJM; VDR = 2/3 VDRM
RGK = ∞; method 1 (linear voltage rise)
Dimensions in mm (1 mm = 0.0394")
VRGM
PGM
TVJ = TVJM
IT = ITAVM
tp = 30 µs
tp = 500 µs
tp = 10 ms
≤
≤
≤
10
5
1
W
W
W
W
PGAVM
0.5
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
°C
°C
°C
VISOL
50/60 Hz, RMS
t = 1 min
t = 1 s
2500
3000
V~
V~
IISOL ≤ 1 mA
Md
Mounting torque
(M5)
(10-32 UNF)
5 ± 15 %
44 ± 15 %
50
Nm
lb.in.
g
Weight
Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated
¬ for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and
dimensions.
© 1999 IXYS All rights reserved
F2 - 51
VVZ 70 VVZF 70
VTO 70 VTOF 70
Symbol
ID, IR
Test Conditions
Characteristic Values
TVJ = TVJM; VR = VRRM; VD = VDRM
IT = 80 A; TVJ = 25°C
≤
≤
5
1.64
0.85
mA
V
VT
VT0
rT
For power-loss calculations only
V
11 mΩ
VGT
IGT
VD = 6 V;
VD = 6 V;
TVJ
TVJ = -40°C
TVJ 25°C
VJ = -40°C
=
25°C
≤
≤
≤
≤
1.5
1.6
100 mA
200 mA
V
V
=
T
VGD
IGD
TVJ = TVJM
;
VD = 2/3 VDRM
≤
≤
0.2
5
V
mA
IL
TVJ = 25°C; tP = 10 µs
≤
450 mA
IG = 0.45 A; diG/dt = 0.45 A/µs
IH
TVJ = 25°C; VD = 6 V; RGK = ∞
≤
≤
200 mA
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 0.45 A; diG/dt = 0.45 A/µs
2
µs
µs
tq
TVJ = TVJM; IT = 20 A, tP = 200 µs; di/dt = -10 A/µs typ. 250
VR = 100 V; dv/dt = 15 V/µs; VD = 2/3 VDRM
RthJC
RthJH
per thyristor / Diode; DC
per module
per thyristor / Diode; DC
per module
0.9 K/W
0.15 K/W
1.1 K/W
0.157 K/W
dS
dA
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
16.1 mm
7.5 mm
50 m/s2
F2
© 1999 IXYS All rights reserved
F2 - 52
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