VUB120-12NO2TL [IXYS]
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| 型号： | VUB120-12NO2TL |
| 厂家： | 
IXYS CORPORATION |
| 描述： | 暂无描述 晶体 三相整流桥 二极管 快恢复二极管 晶体管 功率控制 双极性晶体管 局域网 |
| 文件： | 总2页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VUB 120 / 160
VRRM = 1200/1600 V
IdAVM = 188 A
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
Preliminary Data
M1/O1
S 1
VRRM Type
VRRM Type
A6~
E6~
K6~
V
V
U1/W1
1200 VUB 120-12 NO2 1600 VUB 120-16 NO2
1200 VUB 160-12 NO2 1600 VUB 160-16 NO2
M/O
10
W U S/T
10
Symbol
Conditions
Maximum Ratings
Features
VRRM
IdAVM
1200/1600
188
V
A
• Soldering connections for PCB
mounting
TC = 80°C, rect., d = 1/3
• Isolation voltage 3600 V~
• Ultrafast diode
IFSM
TVJ = 45°C,
TVJ = 150°C,
t = 10 ms, VR = 0 V
t = 10 ms, VR = 0 V
1100
960
A
A
• Convenient package outline
l
I2t
TVJ = 45°C,
TVJ = 150°C,
t = 10 ms, VR = 0 V
t = 10 ms, VR = 0 V
6050
4610
A
A
UL registered E 72873
• Case and potting UL94 V-0
Ptot
TC = 25°C per diode
160
W
Applications
VUB 120 VUB160
• Drive Inverters with brake system
VCES
VGE
TVJ = 25°C to 150°C
Continuous
1200
1200
V
V
20
20
Advantages
IC25
IC80
TC = 25°C, DC
TC = 80°C, DC
TC = 80°C, d = 0.5
140
100
95
177
125
95
A
A
A
• 2 functions in one package
• Easy to mount with two screws
• Suitable for wave soldering
• High temperature and power cycling
capability
ICM
tp = Pulse width limited by TVJM
TC = 25°C
280
570
350
690
A
Ptot
W
VRRM
IFAV
IFRMS
1200
34
V
A
A
TC = 80°C, rect. d = ½
TC = 80°C, rect. d = ½
Dimensions in mm (1 mm = 0.0394")
48
IFSM
TVJ = 45°C,
TVJ = 150°C,
t = 10 ms
t = 10 ms
200
180
A
A
Ptot
TC = 25°C
140
W
TVJ
TVJM
Tstg
-40...+150
150
-40...+125
°C
°C
°C
VISOL
50/60 Hz
IISOL ≤ 1 mA
t = 1 min
t = 1 s
3000
3600
V~
V~
Md
Mounting torque
(M5)
2-2.5
Nm
(10-32 UNF)
18-22
lb.in.
dS
dA
a
Creep distance on surface
Strike distance in air
Maximum allowable acceleration
12.7
9.4
50
mm
mm
m/s2
Weight
typ.
80
g
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1 - 2
VUB 120 / 160
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IR
VR = VRRM
VR = VRRM
,
,
TVJ = 25°C
TVJ = 150°C
0.3 mA
5
1.46
0.87
mA
VF
IF = 150 A,
TVJ = 25°C
V
VT0
rT
For power-loss calculations only
TVJ = 150°C
V
4.0 mΩ
0.6 K/W
K/W
RthJC
RthCH
per diode
0.2
VBR(CES)
VGE(th)
VGS = 0 V, IC = 1 mA
IC = 4 mA
1200
4.5
V
V
6.5
ICES
VCE = 1200 V, TVJ
=
25°C
0.2 mA
TVJ = 125°C
1
mA
VCEsat
VGE = 15 V,
IC = 50 A
IC = 75 A
VUB 120
VUB 160
2.1
2.2
V
V
tSC
VGE = 15 V, VCE = 900 V, TVJ = 125°C,
10
µs
(SCSOA)
RG = 15/10 Ω, non repetitive
RBSOA
VGE = 15 V, VCE = 1200 V, TVJ = 125°C,
Clamped Inductive load, L = 100 µH
RG = 15 Ω
RG = 10 Ω
VUB 120
150
200
A
A
VUB 160
Cies
VCE = 25 V, f = 1 MHz, VGE = 0 V VUB 120
VUB 160
5.7
7.4
nF
nF
td(on)
td(on)
td(off)
td(off)
Eon
VUB 120
VUB 160
170
330
680
750
11
12
8
10
ns
ns
ns
VCE = 600 V, IC = 50/75 A
VGE = 15 V, RG = 15/10 Ω
Inductive load; L = 100 µH
VUB 120
VUB 160
ns
VUB 120
mJ
mJ
mJ
mJ
T
VJ = 125°C
VUB 160
VUB 120
VUB 160
Eoff
RthJC
RthCH
VUB 120
VUB 160
VUB 120
VUB 160
0.22 K/W
0.18 K/W
K/W
0.1
0.1
K/W
IR
VR = VRRM, TVJ = 25°C
TVJ = 125°C
0.5 mA
0.75
1
2.7
1.3
mA
VF
IF = 30 A, TVJ = 25°C
V
VT0
rT
For power-loss calculations only
TVJ = 150°C
V
15 mΩ
IRM
trr
IF = 50 A, -diF/dt = 100 A/µs, VR = 100 V
IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V
8
12
60
A
40
ns
RthJC
RthCH
0.9 K/W
K/W
0.3
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
2 - 2
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