VUE30-20NO1 [IXYS]

Bridge Rectifier Diode, 3 Phase, 30A, 2000V V(RRM), Silicon, MODULE-5;
VUE30-20NO1
型号: VUE30-20NO1
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Bridge Rectifier Diode, 3 Phase, 30A, 2000V V(RRM), Silicon, MODULE-5

局域网 二极管
文件: 总1页 (文件大小:65K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VUE 30  
IdAV = 30 A  
VRRM = 2000 V  
Three Phase  
Rectifier Bridge  
with Fast Recovery Epitaxial Diodes (FRED)  
trr  
= 70 ns  
Preliminary data  
5
+
VRSM  
V
VRRM  
V
Type  
1
~
~
~
2000  
2000  
VUE 30-20NO1  
10  
8
6
Symbol  
IdAV  
Conditions  
TC = 65°C, module  
Maximum Ratings  
Features  
Package with DCB ceramic base plate  
Isolation voltage 3600 V~  
Planar passivated chips  
Leads suitable for PC board soldering  
Creeping and creepage-distance  
fulfil UL 508/CSA 22.2NO14 and  
VDE 0160 requirements  
Epoxy meets UL94V-O  
UL registered E72873  
30  
75  
A
IFSM  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
A
T
VJ = TVJM  
t = 10 ms (50 Hz), sine  
t = 10 ms (50 Hz), sine  
t = 10 ms (50 Hz), sine  
65  
A
VR = 0  
I2dt  
TVJ = 45°C  
VR = 0  
28  
21  
A2s  
A2s  
TVJ = TVJM  
VR = 0  
Applications  
Supplies for DC power equipment  
Input rectifiers for PWM inverter  
Output filter for PWM inverter  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
°C  
Advantages  
VISOL  
50/60 Hz, RMS t = 1 min  
IISOL £ 1 mA t = 1 s  
3000  
3600  
V~  
V~  
Reduced EMI/RFI  
Easy to mount with two screws  
Space and weight savings  
Md  
Mounting torque (M5)  
(10-32UNF)  
2 - 2.5  
18 - 22  
Nm  
lb.in.  
Improved temperature and power  
cycling  
Weight  
typ.  
35  
g
Dimensions in mm (1 mm = 0.0394")  
Symbol  
IR  
Conditions  
Characteristic Values  
typ.  
max  
VR = VRRM  
VR = 0.8 VRRM  
TVJ = 25°C  
TVJ = 125°C  
0.75  
7
mA  
mA  
4
VF  
IF = 12 A  
TVJ = 25°C  
5.41  
V
VT0  
rT  
For power-loss calculations only  
3.3  
93  
V
mW  
RthJC  
RthCH  
per diode,  
DC  
1.7  
K/W  
K/W  
0.3  
9
IRM  
trr  
IF = 12 A, -diF/dt = 100 A/ms  
VR = 540 V, L £ 0.05 mH, TVJ = 100°C  
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V, TVJ = 25°C  
12  
90  
A
70  
ns  
dS  
dA  
a
Creeping distance on surface  
Creepage distance in air  
Max. allowable acceleration  
12.7  
9.4  
50  
mm  
mm  
m/s2  
Data according to IEC 60747 and refer to a single diode unless otherwise stated.  
© 2000 IXYS All rights reserved  
1 - 1  

相关型号:

VUE35-06NO7

Three Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED)
IXYS

VUE50

Three Phase Rectifier Bridge
IXYS

VUE50-12NO1

Three Phase Rectifier Bridge
IXYS

VUE50-20NO1

Bridge Rectifier Diode, 3 Phase, 50A, 1200V V(RRM), Silicon, MODULE-7
IXYS

VUE75-06NO7

Three Phase Rectifier Bridge
IXYS

VUE75-12NO7

ECO-PAC Threee Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED)
IXYS

VUF-S400-03R

Chassis Mount Power Supply, 3.3 Vdc, 60 A, 198 W
CUI

VUF-S400-24R

Chassis Mount Power Supply, 24 Vdc, 18.19 A, 400 W
CUI

VUF-S400-48R

Chassis Mount Power Supply, 48 Vdc, 9.53 A, 400 W
CUI

VUFM-S400-03R

Chassis Mount Power Supply, 3.3 Vdc, 60 A, 198 W
CUI

VUFM-S400-24R

Chassis Mount Power Supply, 24 Vdc, 18.19 A, 400 W
CUI

VUFM-S400-48R

Chassis Mount Power Supply, 48 Vdc, 9.53 A, 400 W
CUI