VUO16 [IXYS]
Three Phase Rectifier Bridge; 三相整流桥
| 型号： | VUO16 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Three Phase Rectifier Bridge |
| 文件： | 总2页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VUO 16
IdAVM = 20 A
VRRM = 800-1800 V
Three Phase
Rectifier Bridge
5
4
1/2
VRSM
V
VRRM
V
Type
2
1
10
8
6
900
800
VUO 16-08NO1
VUO 16-12NO1
VUO 16-14NO1
VUO 16-16NO1
VUO 16-18NO1
1300
1500
1700
1900
1200
1400
1600
1800
10
8
4/5
6
Symbol
Test Conditions
Maximum Ratings
Features
●
Package with DCB ceramic base plate
Isolation voltage 3600 V~
Planar passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
Leads suitable for PC board soldering
UL registered E72873
IdAV
IdAV
IdAVM
TK = 90°C, module
TA = 45°C (RthKA = 0.5 K/W), module
module
15
20
20
A
A
A
●
●
●
●
●
●
IFSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
100
106
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
85
90
A
A
Applications
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
●
I2t
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
50
47
A2s
A2s
●
●
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
36
33
A2s
A2s
●
Field supply for DC motors
Advantages
TVJ
TVJM
Tstg
-40...+130
130
-40...+125
°C
°C
°C
●
Easy to mount with two screws
Space and weight savings
●
●
Improved temperature and power
VISOL
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA t = 1 s
Mounting torque (M5)
(10-32UNF)
3000
3600
V~
V~
cycling
Dimensions in mm (1 mm = 0.0394")
Md
2 - 2.5
18-22
Nm
lb.in.
Weight
typ.
35
g
Symbol
IR
Test Conditions
Characteristic Values
VR = VRRM
VR = VRRM
TVJ = 25°C
TVJ = TVJM
£
£
0.3 mA
5
1.15
0.8
mA
VF
IF = 7 A;
TVJ = 25°C
£
V
VT0
rT
For power-loss calculations only
V
50 mW
RthJH
per diode,
per module,
120° rect.
120° rect.
4.5 K/W
0.75 K/W
dS
dA
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
12.7 mm
9.4 mm
50 m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1 - 2
VUO 16
30
A
100
A
100
50 Hz
0.8 x VRRM
A2s
IFSM
IF
25
20
15
10
5
d
I2 t
80
60
40
20
0
TVJ = 25°C
TVJ = 130°C
TVJ = 45°C
TVJ = 45°C
max.
typ.
TVJ = 130°C
TVJ = 130°C
0
0.0
10
0.5
1.0
1.5
2.0
2.5
10-3
10-2
10-1
100
1
ms
10
s
V
t
t
VF
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 Surge overload current per diode
IFSM: Crest value. t:duration
Fig. 3 I2t versus time (1-10 ms)
per diode
80
25
A
Ptot
W
RthKA K/W
IdAVM
70
60
50
40
30
20
10
0
0.5
1
1.5
2
3
4
20
15
10
5
6
0
0
5
10
15
20
25
0
25
50
75
100
125
150
0
25
50
75
100 125 150
°C
A
°C
TA
TK
IdAVM
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Maximum forward current at
heatsink temperature TK
5
ZthJK
K/W
4
ZthJK
3
2
1
0
Constants for ZthJK calculation:
i
Rth (K/W)
ti (s)
1
2
3
4
0.015
0.1
1.835
2.55
0.008
0.02
0.05
0.4
10-3
10-2
10-1
100
101
102
s
t
Fig. 6 Transient thermal impedance junction to heatsink per diode
© 2000 IXYS All rights reserved
2 - 2
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IXYS
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