VVZB170-16NO1 [IXYS]
Silicon Controlled Rectifier, 1600V V(DRM), 1600V V(RRM), 3 Element, MODULE-22;
| 型号： | VVZB170-16NO1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Silicon Controlled Rectifier, 1600V V(DRM), 1600V V(RRM), 3 Element, MODULE-22 局域网 栅 双极性晶体管 栅极 |
| 文件： | 总3页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advanced Technical Information
VVZB 170
VRRM = 1600 V
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
IdAVM = 170 A
10
19
+
+
11 13
12 20
16 15 14
NTC
VRRM
Type
V
6+7
4+5
2+3
1
1600
VVZB 170-16 NO1
17
E72873
8+9
18 21+22
See outline drawing for pin arrangement
Symbol
Conditions
Maximum Ratings
Ftures
• SoleringconnectionsforPCBmounting
• Convenient package outline
• Thermistor
VRRM
IdAVM
1600
170
V
A
TC = 85°C; sinusoidal 120°
IFSM
TVJ = 45°C; t = 10 ms; VR = 0 V
TVJ = 150°C; t = 10 ms; VR = 0 V
900
780
A
Applications
I2t
TVJ = 45°C; t = 10 ms; VR = 0 V
TVJ = 150°C; t = 10 ms; VR = 0 V
405
3040
A
A
• Drive Inverters with brake system
Advantages
Ptot
TC = 25°C per diode
250
150
W
• 2 functions in one package
• Easy to mount with two screws
• Suitable for wave soldering
• High temperature and power cycling
capability
(di/dt)cr
TVJ = TVJM
;
repetitive; IT = 150 A
A/µs
f = 50 Hz; tP = 200 µs;
VD = 2/3 VDRM
IG = 0.45 A;
;
non repetitive; IT = Id(AV)3
500
A/µs
V/µs
diG/dt = 0.45 A/µs
(dv/dt)cr
PGM
TVJ = TVJM; VDR = 2/3 VDRM
RGK = ∞; method 1 (linear voltage rse)
;
1000
TVJ = TVJM
;
= 3µs
tP 00 µs
10
5
W
W
IT = Id(AV)/3;
PGAVM
0.5
W
VCES
VGE
TVJ = 25°C to 150
Continuous
1200
20
V
V
IC25
IC80
TC = 25°C; DC
TC = 80°C; DC
141
100
A
A
ICM
tp = Pulse width limited by TVJM
TC = 25°C
150
570
A
Ptot
W
VRRM
IFAV
IFRMS
IFRM
1200
27
38
tbd
V
A
A
A
Recommended replacement:
VVZB 170-16ioXT
TC = 80°C; rectangular d = 0.5
TC = 80°C; rectangular d = 0.5
TC = 80°C; tP = 10 µs; f = 5 kHz
IFSM
Ptot
TVJ = 45°C; t = 10 ms
TC = 25°C
200
130
A
W
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
20091110b
© 2009 IXYS All rights reserved
1 - 3
Advanced Technical Information
VVZB 170
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IR, ID
VR = VRRM; TVJ = 25°C
VR = VRRM; TVJ = 150°C
0.1 mA
20 mA
VF, VT
IF = 150 A; TVJ = 25°C
1.68
V
VT0
rT
for power-loss calculations only
TVJ = 150°C
0.85
5.9 mΩ
V
VGT
IGT
VD = 6 V;
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
1.5
1.6
95 mA
V
V
200 mA
VGD
IGD
TVJ = TVJM
TVJ = TVJM
;
;
VD = 2/3 VDRM
VD = 2/3 VDRM
0.2
10 mA
V
IL
VD = 6 V; tG = 10 µs;
diG/dt = 0.45 A/µs; IG = 0.45 A
450 mA
IH
TVJ = TVJM; VD = 6 V; RGK = ∞
200 mA
tgd
VD = ½ VDRM
diG/dt = 0.45 A/µs; IG = 0.45 A
;
2
µs
tq
TVJ = TVJM; VR = 100 V; VD = 2/3 VDRM
tP = 200 µs; dv/dt = 20 V/µs;
IT = 120 A; -di/dt = 10 A/µs
;
150
s
RthJC
RthCH
per rectifier
0.5 K/W
0.1 K/W
VBR(CES)
VGE(th)
VGS = 0 V; IC = 0.1 mA
IC = 3 mA
1200
4.5
V
V
6.45
ICES
VCE = 1200 V; TVJ = 25°C
VCE = 0,8•VCES;TVJ = 125°C
0.1 mA
0.5 mA
VCEsat
VGE = 15 V; IC = 150 A
3.7
10
V
µs
A
tSC (SCSOA)
RBSOA
VGE = 15 V; VCE = 900 V; TVJ = 12C
VGE = 15 V; VCE = 1200 V; TVJ = 125°C;
clamped inductive load; L 100 µH;
RG = 15 Ω
150
Cies
VCE = 25 V; f = 1 MHz; VGE 0 V
5.7
nF
VCE = 720 V= 75 A;
VGE = 15 V; RG 15 Ω;
Inductive load; L = 100 µH;
TVJ = 125°C
td(on)
td(off)
Eon
150
680
9
ns
ns
mJ
mJ
Eoff
7.5
RthJC
RthJH
0.22 K/W
K/W
0.4
0.6
0.5
Ri
τi
1
2
3
4
0.02308
0.06385
0.2777
0.1354
0.0004
0.007
0.092
0.44
0.4
ZthJC
0.3
[K/W]
0.2
0.1
0.0
0.001
0.01
0.1
1
10
t [s]
Fig. 1 Transient thermal impedance junction to case (per thyristor/diode)
© 2009 IXYS All rights reserved
20091110b
2 - 3
Advanced Technical Information
VVZB 170
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IR
VR = VRRM
,
TVJ = 25°C
0.25 mA
VR = 1200 V, TVJ = 125°C
1
mA
VF
IF = 30 A, TVJ = 25°C
2.76
1.3
16 mΩ
V
VT0
rT
For power-loss calculations only
TVJ = 150°C
V
IRM
trr
IF = 50 A, -diF/dt = 100 A/µs, VR = 100 V
IF = 1 A, -diF/dt = 200 A/µs, VR = 30 V
5.5
40
11
A
ns
RthJC
RthCH
0.9 K/W
0.1 K/W
1
T
1
R25
B25/50
4.75
5.0 5.25 kΩ
(
B25/100
)
298K
R(T) = R25 • e
3375
K
Symbol
Conditions
Maximum Ratings
TVJ
TVJM
Tstg
-40...+150
150
-40...+125
°C
°C
VISOL
50/60 Hz, t = 1 min
IISOL ≤ 1 mA, t = 1 s
2500
3000
V~
V~
Md
Mounting torque
2.7...3.3
Nm
dS
dA
a
Creep distance on surface
Strike distance in air
Maximum allowable acceleration
12.7
9.6
50
mm
mm
m/s2
Weight
typ.
180
g
Dimensions in mm (1 mm = 0.0394")
20091110b
© 2009 IXYS All rights reserved
3 - 3
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