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WPH56-16 [IXYS]

Silicon Controlled Rectifier, 60000mA I(T), 1600V V(RRM),;
WPH56-16
型号： WPH56-16
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Silicon Controlled Rectifier, 60000mA I(T), 1600V V(RRM),

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WESTCODE  
SEMICONDUCTORS  
ITRMS = 2 x 100 A  
ITAVM = 2 x 64 A  
VRRM = 800 - 1800 V  
Thyristor Modules  
Thyristor/Diode Modules  
TO-240 AA  
VRSM  
VDSM  
V
VRRM  
VDRM  
V
Type  
6
3
7
4
2
5
1
900  
1300  
1500  
1700  
1900  
800  
1200  
1400  
1600  
1800  
WPT56-08  
WPT56-12  
WPT56-14  
WPT56-16  
WPT56-18  
WPH 56-08  
WPH 56-12  
WPH 56-14  
WPH 56-16  
WPH 56-18  
3
6 7 1  
5 4 2  
Symbol  
TestConditions  
MaximumRatings  
WPT 56  
WPH 56  
ITRMS, IFRMS  
ITAVM, IFAVM  
TVJ = TVJM  
TC = 83°C; 180° sine  
TC = 85°C; 180° sine  
100  
64  
60  
A
A
A
I
TSM, IFSM  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1500  
1600  
A
A
3
1
5 2  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1350  
1450  
A
A
∫i2dt  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
11200  
10750  
A2s  
A2s  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
9100  
8830  
A2s  
A2s  
Features  
(di/dt)cr  
TVJ = TVJM  
repetitive, IT = 150 A  
150  
A/µs  
●
f =50 Hz, tP =200 µs  
VD = 2/3 VDRM  
IG = 0.45 A  
Internationalstandardpackage,  
JEDEC TO-240 AA  
Direct copper bonded Al2O3 -ceramic  
baseplate  
Planar passivated chips  
Isolation voltage 3600 V~  
Gate-cathode twin pins for WPT  
●
non repetitive, IT = ITAVM  
VDR = 2/3 VDRM  
500  
A/µs  
V/µs  
diG/dt = 0.45 A/µs  
●
●
●
(dv/dt)cr  
PGM  
TVJ = TVJM  
;
1000  
RGK = ∞; method 1 (linear voltage rise)  
TVJ = TVJM  
IT = ITAVM  
tP = 30 µs  
tP = 300 µs  
10  
5
W
W
W
Applications  
PGAV  
VRGM  
0.5  
●
DC motor control  
Softstart AC motor controller  
Light,heatandtemperaturecontrol  
10  
V
●
TVJ  
TVJM  
Tstg  
-40...+125  
125  
-40...+125  
°C  
°C  
°C  
●
Advantages  
VISOL  
50/60 Hz, RMS  
ISOL ≤ 1 mA  
Mountingtorque (M5)  
t = 1 min  
3000  
3600  
V~  
V~  
I
t = 1 s  
●
Space and weight savings  
Simple mounting with two screws  
●
Md  
2.5-4.0/22-35 Nm/lb.in.  
2.5-4.0/22-35 Nm/lb.in.  
●
Terminalconnectiontorque(M5)  
Improvedtemperatureandpower  
cycling  
Reduced protection circuits  
Weight  
Typical including screws  
90  
g
●
Symbol  
IRRM,IDRM  
VT, VF  
TestConditions  
CharacteristicValues  
10  
V
1: IGT, TVJ = 125°C  
2: IGT, TVJ 25°C  
TVJ = TVJM; VR = VRRM; VD = VDRM  
IT, IF = 200 A; TVJ = 25°C  
5
1.57  
0.85  
mA  
V
=
3: IGT, TVJ = -40°C  
VG  
VT0  
rT  
For power-loss calculations only (TVJ = 125°C)  
V
3.7 mΩ  
VGT  
IGT  
VD = 6 V;  
VD = 6 V;  
TVJ = 25°C  
TVJ = -40°C  
TVJ = 25°C  
TVJ = -40°C  
1.5  
1.6  
100 mA  
200 mA  
V
V
3
2
6
1
5
1
4
VGD  
IGD  
TVJ = TVJM  
;
VD = 2/3 VDRM  
0.2  
10 mA  
V
4: PGAV = 0.5 W  
5: PGM 5 W  
6: PGM = 10 W  
IL  
TVJ = 25°C; tP = 10 µs; VD = 6 V  
IG = 0.45 A; diG/dt = 0.45 A/µs  
450 mA  
=
IGD, TVJ = 125°C  
IH  
TVJ = 25°C; VD = 6 V; RGK = ∞  
200 mA  
0.1  
100  
101  
102  
103  
IG  
104  
mA  
tgd  
TVJ = 25°C; VD = 1/2 VDRM  
2
µs  
IG = 0.45 A; diG/dt = 0.45 A/µs  
Fig. 1 Gate trigger characteristics  
tq  
TVJ = TVJM; IT = 150 A, tP = 200 µs; -di/dt = 10 A/µs typ.  
VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM  
150  
µs  
1000  
TVJ = 25°C  
QS  
IRM  
TVJ = TVJM; IT, IF = 50 A, -di/dt = 3 A/µs  
100  
24  
µC  
A
s
µ
RthJC  
RthJK  
per thyristor/diode; DC current  
permodule  
per thyristor/diode; DC current  
permodule  
0.45 K/W  
0.225 K/W  
0.65 K/W  
0.325 K/W  
tgd  
other values  
see Fig. 8/9  
typ.  
Limit  
100  
10  
1
dS  
dA  
a
Creepage distance on surface  
Strike distance through air  
Maximumallowableacceleration  
12.7 mm  
9.6 mm  
50 m/s2  
Optional accessories for module-type WPT  
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red  
TypeU9910  
UL 758, style 1385,  
CSA class 5851, guide 460-1-1  
mA  
10  
100  
1000  
IG  
Fig. 2 Gate trigger delay time  
Dimensions in mm (1 mm = 0.0394")  
WPT 56  
WPH 56  
Circuit  
B6  
3 x WPT 56 or  
3 x WPH 56  
Fig. 7 ThreephaseAC-controller:  
Power dissipation versus RMS output  
currentandambienttemperature  
Circuit  
W 3  
3 x WPT 56 or  
3 x WPH 56  
Fig. 8 Transientthermalimpedancejunction  
to case (per thyristor or diode)  
WPT 56  
WPH 56  
RthJC for various conduction angles d:  
d
RthJC (K/W)  
DC  
0.45  
0.47  
0.49  
0.505  
0.52  
180°  
120°  
60°  
30°  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
0.014  
0.026  
0.41  
0.015  
0.0095  
0.175  
Fig. 9 Transientthermalimpedancejunction  
to heatsink (per thyristor or diode)  
WPT 56  
WPH 56  
RthJK for various conduction angles d:  
d
RthJK (K/W)  
DC  
0.65  
0.67  
0.69  
0.705  
0.72  
180°  
120°  
60°  
30°  
Constants for ZthJK calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
0.014  
0.026  
0.41  
0.2  
0.015  
0.0095  
0.175  
0.67  
UK : Westcode Semiconductors Ltd  
P.O. Box 97, Chippenham, Wiltshire, England SN15 1JL  
Tel : +44 (0)1249 444524 Fax : +44 (0)1249 659448  
E-Mail : WSL.sales@westcode.com  
WESTCODE  
SEMICONDUCTORS  
USA : Westcode Semiconductors Inc  
3270 Cherry Avenue Long Beach, California 90807  
Tel : 562 595 6971 Fax : 562 595 8182  
WWW: http//www.westcode.com  
In the interest of Product improvement Westcode reserves the right to change specifications at any time without notice.  
© Westcode Semiconductors Ltd  

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