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2N6765 [IXYS]

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series; 高压功率MOSFET模N沟道增强型高耐用性系列

2N6765


元器件型号：	2N6765
生产厂家：	IXYS CORPORATION
描述和应用：	High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series 高压功率MOSFET模N沟道增强型高耐用性系列晶体晶体管功率场效应晶体管开关脉冲高压局域网
PDF文件：	总1页 (文件大小：49K)
下载文档：	下载PDF数据表文档文件
型号参数：2N6765参数

2N6766

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

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67 IXYS

2N6766

N-Channel Power MOSFETs, 30A, 150V/200V

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173 FAIRCHILD

2N6766

N-CHANNEL MOSFET

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36 MICROSEMI

2N6766

N-CHANNEL MOSFET

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11 MICROSEMI

2N6766

N-CHANNEL MOSFET

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36 MICROSEMI

2N6766

N-CHANNEL MOSFET

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79 MICROSEMI

2N6766SCC5205/013

Power Field-Effect Transistor, 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,

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5 IRF

2N6766T1

N-CHANNEL MOSFET

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24 MICROSEMI

2N6766T1E3

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 MICROSEMI

2N6766TXV

Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE,

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0 MICROSEMI

2N6767

N-Channel Power MOSFETs, 15A, 350V/400V

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33 FAIRCHILD

2N6767

N-CHANNEL ENHANCEMENT-MODE

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16 NJSEMI

2N6767

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 IXYS

2N6767

FET DEVICES WITH N_CHANNEL POLARITY

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0 NJSEMI

2N6768

N-CHANNEL ENHANCEMENT-MODE

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20 NJSEMI

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