2N7002M [JCST]
MOSFET( N-Channel ); MOSFET（ N通道）
| 型号： | 2N7002M |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | MOSFET( N-Channel ) |
| 文件： | 总4页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate MOSFET
D
2N7002M
MOSFET( N-Channel )
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
TOP
DESCRIPTION
High cell density, DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable, and fast switching
performance. They can be used in most applications requiring up to 400mA DC
and can deliver pulsed currents up to 2A. These products are particularly suited
for low voltage, low current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
G
S
S
D
1. GATE
2. SOURCE
3. DRAIN
BACK
G
FEATURES
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
APPLICATION
N-Channel Enhancement Mode Field Effect Transistor
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: 72
D
72
G
S
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
Value
Units
V
VDS
ID
Drain-Source voltage
Drain Current
60
115
mA
mW
℃/W
℃
PD
Power Dissipation
150
RθJA
TJ
Thermal Resistance. Junction to Ambient Air
Junction Temperature
625
150
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
60
60
1
TYP
MAX
UNIT
VGS=0V,ID=10µA
Drain-Source Breakdown Voltage
V(BR)DSS
V
VGS=0V,ID=3mA
Gate-Threshold Voltage*
Gate-body Leakage
Vth(GS)
lGSS
VDS=VGS, ID=250µA
VDS=0V, VGS=±25V
VDS=60V, VGS=0V
VDS=60V,VGS=0V,Tj=125℃
VGS=10V, VDS=7V
VGS=10V, ID=500mA
VGS=5V, ID=50mA
VGS=10V, ID=500mA
VGS=5V, ID=50mA
VDS=10V, ID=200mA
IS=115mA, VGS=0V
2.5
±100
1
nA
µA
Zero Gate Voltage Drain Current
IDSS
500
On-state Drain Current*
ID(ON)
500
80
mA
1.2
1.7
7.5
7.5
Drain-Source On-Resistance*
RDS(0n)
Ω
3.75
0.375
Drain-Source On- Voltage *
VDS(0n)
V
Forward Tran conductance*
Diode Forward Voltage
Input Capacitance
gts
ms
V
VSD
Ciss
COSS
CrSS
1.2
50
25
5
V
DS=25V, VGS=0V,f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
* Pulse test , pulse width≤300µs, duty cycle≤2% .
SWITCHING TIME
td(0n)
VDD=25V,RG=25Ω
ID=500mA,VGEN=10V
RL=50Ω
20
40
Turn-on Time
ns
td(off)
Turn-off Time
Typical Characteristics
2N7002M
D im e n s io n s In M illim e te r s
D im e n s io n s In In c h e s
S y m b o l
M in .
0 .4 5 0
0 .0 1 0
0 .1 7 0
0 .2 7 0
M a x .
0 .5 5 0
0 .0 9 0
0 .2 7 0
0 .3 7 0
M in .
0 .0 1 8
0 .0 0 0
0 .0 0 7
0 .0 1 1
M a x .
0 .0 2 2
0 .0 0 4
0 .0 1 1
0 .0 1 5
A
A 1
b
b 1
b 2
D
0 .2 5 0 R E F .
0 .0 1 0 R E F .
1 .1 5 0
1 .1 5 0
1 .2 5 0
1 .2 5 0
0 .0 4 5
0 .0 4 5
0 .0 4 9
0 .0 4 9
E
D 2
E 2
e
0 .4 7 0 R E F .
0 .8 1 0 R E F .
0 .8 0 0 T Y P .
0 .2 8 0 R E F .
0 .2 3 0 R E F .
0 .1 5 0 R E F .
0 .3 0 0 R E F .
0 .0 9 0 R E F .
0 .0 0 2 R E F .
0 .0 3 2 R E F .
0 .0 3 2 T Y P .
0 .0 1 1 R E F .
0 .0 0 9 R E F .
0 .0 0 6 R E F .
0 .0 1 2 R E F .
0 .0 0 4 R E F .
L
L 1
L 2
k
z
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FAIRCHILD
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