2SA1012Y(TO-220) [JCST]
Transistor;
| 型号： | 2SA1012Y(TO-220) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：353K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
TO-220
2SA1012 TRANSISTOR (PNP)
1. BASE
FEATURES
2. COLLECTOTR
3. EMITTER
z
HIGH CURRENT SWITCHING APPLICATIONS.
z
Low Collector Saturation Voltage
: VCE(SAT) = - 0.4V(MAX) at IC= - 3A
High Speed Swithing Time : tstg = 1.0us (Typ.)
Complementary to 2SC2562
z
z
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-60
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-50
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-5
A
PC
2
W
℃
℃
Tj
150
-55-150
Tstg
Storage Temperature Range
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
-60
-50
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC =-1mA, IE=0
IC =-1mA, IB=0
V
IE=-100μA, IC=0
VCB=-50V, IE=0
V
-1
-1
μA
μA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
DC current gain
hFE(1)
VCE=-1V, IC=-1A
VCE=-1V, IC=-3A
IC=-3A, IB=150mA
IC=-3A, IB=150mA
VCE=-4V, IC=-1A
VCB=-10V, IE=0, f=1MHz
70
30
240
hFE(2)
*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
*
-0.2
-0.9
60
-0.4
-1.2
V
V
VBE(SAT)
fT
Cob
ton
tstg
tf
MHz
pF
Collector output capacitance
Turn-on Time
Switching
Storage Time
time
170
0.1
1.0
0.1
VCC=-30V,IC=-3A,
IB1=-IB2=-0.15A
us
Fall Time
*Pulse test: tp≤300μS, δ≤0.02.
CLASSIFICATION OF hFE
Rank
O
Y
70-140
120-240
Range
A,Mar,2011
Typical Characteristics
2SA1012
A,Mar,2011
A,Mar,2011
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