2SA1013R(TO-92L) [JCST]
Transistor;
| 型号： | 2SA1013R(TO-92L) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：316K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO-92L
2SA1013
TRANSISTOR (PNP)
1. EMITTER
2. COLLECTOR
3. BASE
FEATURE
y
y
y
High Voltage:VCEO=-160V
Large Continuous Collector Current Capability
Complementary to 2SC2383
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
-160
-160
-6
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
V
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-1
A
PC
0.9
W
℃
℃
Tj
150
Tstg
Storage Temperature
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC=- 100μA , IE=0
IC= -1mA , IB=0
Min
-160
-160
-6
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IE= -10μA, IC=0
V
VCB=-150 V , IE=0
VEB=-6V, IC=0
-1
-1
μA
μA
Emitter cut-off current
IEBO
DC current gain
hFE
VCE=-5 V, IC=- 200mA
IC= -500m A, IB= -50mA
IC= -5 mA, VCE=- 5V
60
15
320
-1.5
-0.75
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
V
V
Transition frequency
V
CE= -5 V, IC= -200mA
MHz
pF
f T
Collector Output capacitance
VCB=-10V, IE=0,f=1MHz
35
Cob
CLASSIFICATION OF hFE
Rank
R
O
Y
Range
60-120
100-200
160-320
A,Jun,2011
相关型号：
2SA1015
PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER)
TOSHIBA
©2020 ICPDF网 联系我们和版权申明