2SA1242Y(TO-252) [JCST]
Transistor;
| 型号： | 2SA1242Y(TO-252) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252 Plastic-Encapsulate Transistors
2SA1242 TRANSISTOR (PNP)
TO-252
FEATURES
z
z
Strobe Flash Applications Medium Power Amplifier Applications
Excellent hFE Linearity
1. BASE
: hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A)
: hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)
Low Collector Saturation Voltage
2. COLLECTOR
z
z
3. EMITTER
: VCE (sat) = −1.0 V (max) (IC = −4 A, IB = −0.1 A)
High Power Dissipation
: PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C)
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
Unit
V
-35
-20
V
-8
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-5
A
PC
1
W
℃
℃
TJ
150
Storage Temperature
-55 to +150
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
-35
-20
-8
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=-100uA, IE=0
V(BR)CEO IC=-1mA, IB=0
V(BR)EBO IE=-100uA, IC=0
V
V
ICBO
IEBO
VCB=-35V, IE=0
VEB=-8V, IC=0
-100
-100
320
nA
nA
Emitter cut-off current
hFE(1)
hFE(2)
VCE(sat)
VBE
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-4A
100
70
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
IC=-4A, IB=-0.1A
-1
V
V
VCE=-2V, IC=-4A
-1.5
Transition frequency
fT
VCE=-2V, IC=-0.5A
VCB=-10V, IE=0,f=1MHZ
170
62
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE(1)
Rank
0
Y
100-200
160-320
Range
A,Jun,2011
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